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    A114B

    Abstract: AGERE AGR26180E AGR26180EF AGR26180EU AGR26180XF AGR26180XU JESD22-C101A
    Text: Preliminary Product Brief April 2004 AGR26180E 180 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR26180E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications


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    PDF AGR26180E AGR26180E AGR26180EU AGR26180EF PB04-082RFPP PB04-017RFPP) A114B AGERE AGR26180EF AGR26180EU AGR26180XF AGR26180XU JESD22-C101A

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    Abstract: No abstract text available
    Text: Preliminary Product Brief December 2003 AGR26180E 180 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR26180E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide


    Original
    PDF AGR26180E AGR26180EU AGR26180EF AGR26180EUg PB04-017RFPP