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    AGR26180E Price and Stock

    Advanced Semiconductor Inc AGR26180EF

    RF MOSFET Transistors 2.535-2.655GHz27Watt Gain 12.5dB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics AGR26180EF
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    • 10 $100.38
    • 100 $95.98
    • 1000 $95.98
    • 10000 $95.98
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    AGR26180E Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    AGR26180EF Agere Systems 180 W, 2.535 GHz-2.655 GHz N-Channel E-Mode,Lateral MOSFET Original PDF
    AGR26180EF TriQuint Semiconductor 180 W, 2.535 GHz-2.655 GHz, N-Channel E-Mode, Lateral MOSFET Original PDF
    AGR26180EU Agere Systems 180 W, 2.535 GHz - 2.655 GHz, N-Channel E-Mode, Lateral MOSFET Original PDF

    AGR26180E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A114B

    Abstract: AGERE AGR26180E AGR26180EF AGR26180EU AGR26180XF AGR26180XU JESD22-C101A
    Text: Preliminary Product Brief April 2004 AGR26180E 180 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR26180E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications


    Original     		PDF AGR26180E AGR26180E AGR26180EU AGR26180EF PB04-082RFPP PB04-017RFPP) A114B AGERE AGR26180EF AGR26180EU AGR26180XF AGR26180XU JESD22-C101A

    AGR26180EF

    Abstract: J500 JESD22-C101A j78 transistor j78 transistor equivalent
    Text: Preliminary Data Sheet May 2004 AGR26180EF 180 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR26180EF is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications,


    Original     		PDF AGR26180EF AGR26180EF DS04-112RFPP J500 JESD22-C101A j78 transistor j78 transistor equivalent

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Product Brief December 2003 AGR26180E 180 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR26180E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide


    Original     		PDF AGR26180E AGR26180EU AGR26180EF AGR26180EUg PB04-017RFPP

    mmds

    Abstract: AGR26180EF J500 JESD22-C101A
    Text: Preliminary Data Sheet May 2004 AGR26180EF 180 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR26180EF is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications,


    Original     		PDF AGR26180EF AGR26180EF AGR19K180U AGR26180XF 12-digit mmds J500 JESD22-C101A

    TGA2517

    Abstract: TQP6M9002 TQM653029 TGS4304 SG-O1-16 TGA2503 TAT7469 TGA9092-SCC 854651 AH125
    Text: 02/2010 Triquint SEMICONDUCTOR Product Selection Guide 2010 ABOUT TRIQUINT SEMICONDUCTOR ABOUT TRIQUINT SEMICONDUCTOR Corporate Headquarters – Hillsboro, Oregon Corporate Headquarters – Hillsboro, OR Semiconductor is Digital a leading TriQuint TriQuint


    Original     		PDF cus937 TGA2517 TQP6M9002 TQM653029 TGS4304 SG-O1-16 TGA2503 TAT7469 TGA9092-SCC 854651 AH125

    TGA2517

    Abstract: TQP6M9002 TQM7M5013 TGA4943-SL CGB241 TQM6M4003 bt ag402 TGA4956-SM TQM6M4048 TGA9092-SCC
    Text: TABLE OF CONTENTS About TriQuint Semiconductor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 Guide by Market Automotive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4


    Original     		PDF

    AGRA10EM

    Abstract: APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM
    Text: RF Power Transistor Line RF Power Environment Agere’s RF LDMOS transistors are used in wireless base stations to boost voice, data, and video signals in various frequency ranges. They are targeted for second-generation 2G , 2.5-generation (2.5G), and thirdgeneration (3G) base station


    Original     		PDF CA03-005RFPP-7 CA03-005RFPP-6) AGRA10EM APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM