A114B
Abstract: AGERE AGR26180E AGR26180EF AGR26180EU AGR26180XF AGR26180XU JESD22-C101A
Text: Preliminary Product Brief April 2004 AGR26180E 180 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR26180E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications
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AGR26180E
AGR26180E
AGR26180EU
AGR26180EF
PB04-082RFPP
PB04-017RFPP)
A114B
AGERE
AGR26180EF
AGR26180EU
AGR26180XF
AGR26180XU
JESD22-C101A
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AGR26180EF
Abstract: J500 JESD22-C101A j78 transistor j78 transistor equivalent
Text: Preliminary Data Sheet May 2004 AGR26180EF 180 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR26180EF is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications,
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AGR26180EF
AGR26180EF
DS04-112RFPP
J500
JESD22-C101A
j78 transistor
j78 transistor equivalent
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Untitled
Abstract: No abstract text available
Text: Preliminary Product Brief December 2003 AGR26180E 180 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR26180E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide
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Original
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PDF
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AGR26180E
AGR26180EU
AGR26180EF
AGR26180EUg
PB04-017RFPP
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mmds
Abstract: AGR26180EF J500 JESD22-C101A
Text: Preliminary Data Sheet May 2004 AGR26180EF 180 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR26180EF is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications,
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Original
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PDF
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AGR26180EF
AGR26180EF
AGR19K180U
AGR26180XF
12-digit
mmds
J500
JESD22-C101A
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