Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet November 2003 AGR21090E 90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21090E is a high-voltage, gold-metalized, laterally diffused, metal oxide semiconductor LDMOS RF power transistor suitable for wideband
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AGR21090E
AGR21090EU
AGR21090EF
DS04-018RFPP
DS03-070RFPP)
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J299
Abstract: No abstract text available
Text: Preliminary Data Sheet December 2003 AGR21090E 90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21090E is a high-voltage, gold-metalized, laterally diffused, metal oxide semiconductor LDMOS RF power transistor suitable for wideband
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PDF
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AGR21090E
AGR21090EU
AGR21090EF
DS04-059RFPP
DS04-018RFPP)
J299
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AGR21090E
Abstract: AGR21090EF JESD22-C101A mosfet 6 ghz
Text: AGR21090E 90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21090E is a high-voltage, gold-metalized, laterally diffused, metal oxide semiconductor LDMOS RF power transistor suitable for wideband
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Original
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PDF
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AGR21090E
AGR21090E
AGR21090EU
AGR21090EF
1090EF
AGR21090XF
M-AGR21090F
12-digit
AGR21090EF
JESD22-C101A
mosfet 6 ghz
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AGR21090
Abstract: mosfet j460 AGR21090E AGR21090EF JESD22-C101A mosfet J442 100b6r8 100B8 100B6R8JW
Text: Preliminary Data Sheet April 2004 AGR21090E 90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21090E is a high-voltage, gold-metalized, laterally diffused, metal oxide semiconductor LDMOS RF power transistor suitable for wideband
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Original
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PDF
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AGR21090E
AGR21090E
AGR21090EU
AGR21090EF
DS04-165RFPP
DS04-059RFPP)
AGR21090
mosfet j460
AGR21090EF
JESD22-C101A
mosfet J442
100b6r8
100B8
100B6R8JW
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