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    AFM02N6 Search Results

    AFM02N6 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    AFM02N6-000 Skyworks Solutions Low Noise GaAs MESFET Chip Original PDF
    AFM02N6-032 Skyworks Solutions Surface Mount GaAs MESFET Chip Original PDF
    AFM02N6-212 Skyworks Solutions Low Noise Packaged GaAs MESFET Chip Original PDF
    AFM02N6-213 Skyworks Solutions Low Noise Packaged GaAs MESFET Chip Original PDF

    AFM02N6 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    9435 GM

    Abstract: ms 16881 GA 1176 MESFET S parameter
    Text: Surface Mount GaAs MESFET Chip AFM02N6-032 Features SOT-143 • Low Noise Figure, 0.55 dB @ 4 GHz, 2.2 dB @ 12 GHz 0.110 2.80 mm MIN. 0.120 (3.04 mm) MAX. 0.076 (1.92 mm) REF. 0.020 (0.50 mm) REF. ■ High Gain, 16 dB @ 4 GHz, 7.0 dB @ 12 GHz 3 4 0.083 (2.10 mm) MIN.


    Original     		PDF AFM02N6-032 OT-143 6/99A 9435 GM ms 16881 GA 1176 MESFET S parameter

    9435 GM

    Abstract: GA 1176 AFM02N6-032 AFM02N6
    Text: Surface Mount GaAs MESFET Chip AFM02N6-032 Features • Low Noise Figure, 0.55 dB @ 4 GHz, 2.2 dB @ 12 GHz SOT-143 0.110 2.80 mm MIN. 0.120 (3.04 mm) MAX. 0.076 (1.92 mm) REF. 0.020 (0.50 mm) REF. ■ High Gain, 16 dB @ 4 GHz, 7.0 dB @ 12 GHz 4 0.083 (2.10 mm) MIN.


    Original     		PDF AFM02N6-032 OT-143 AFM02N6-032 OT-143 9/99A 9435 GM GA 1176 AFM02N6

    4511 gm

    Abstract: um 5506 gm 4511 AFM02N6-000 AFM02N6
    Text: Low Noise GaAs MESFET Chip AFM02N6-000 • Low Noise Figure, 1.0 dB @ 12 GHz ■ Passivated Surface 100 ■ 0.25 µm Ti/Pd/Au Gates 200 ■ High MAG, >12 dB @ 12 GHz 300 ■ High Associated Gain, 9.5 dB @ 12 GHz 400 Dims µms : X = 400, Y = 620 Features 100


    Original     		PDF AFM02N6-000 AFM02N6-000 6/99A 4511 gm um 5506 gm 4511 AFM02N6

    vp 3082

    Abstract: AFM02N6-212 AFM02N6-213 MESFET
    Text: Low Noise Packaged GaAs MESFET Chips AFM02N6-212, AFM02N6-213 Features 213 Drain • Low Noise Figure, 1.1 dB @ 12 GHz ■ High Associated Gain, 8.0 dB @ 12 GHz Source Source ■ High MAG, > 8.5 dB @ 12 GHz Gate Drain Source ■ 0.25 µm Ti/Pd/Au Gates ■ Passivated Surface


    Original     		PDF AFM02N6-212, AFM02N6-213 6/99A vp 3082 AFM02N6-212 AFM02N6-213 MESFET

    AFM04P2-000

    Abstract: AFP02N3-000 afp02n3-213
    Text: Section 1 GaAs FETs and PHEMTs Numerical Index Part Number Page AFM02N6-000 1-7 AFM02N6-032 1-3 AFM02N6-212 1-11 AFM02N6-213 1-11 AFM04P2-000 1-26 AFM04P3-104 1-28 AFM04P3-213 1-31 AFM04P3-214 1-31 AFM06P2-000 1-34 AFM08P2-000 1-36 AFP02N3-000 1-15 AFP02N3-104


    OCR Scan     		PDF AFM02N6-000 AFM02N6-032 AFM02N6-212 AFM02N6-213 AFM04P2-000 AFM04P3-104 AFM04P3-213 AFM04P3-214 AFM06P2-000 AFM08P2-000 AFP02N3-000 afp02n3-213

    PJ 0459

    Abstract: 1348 OH CD 4544 AFM02N6-032 9435 GM
    Text: •Alpha Surface Mount GaAs MESFET Chip AFM02N6-032 S O T-143 Features 4 GHz, ■ Low Noise Figure, 0.55 dB 2.2 dB @ 12 GHz 0.110 2.80 m m MIN. 0 .120 (3.04 m m ) MAX. • 0 .0 7 6 (1.92 mm ) REF. 0 .0 2 0 (0.50 m m ) R E F .- High Gain, 16 dB ( 4 GHz,


    OCR Scan     		PDF AFM02N6-032 AFM02N6-032 OT-143 OT-143 9/99A PJ 0459 1348 OH CD 4544 9435 GM

    9435 GM

    Abstract: AFM02N6
    Text: 03Alpha Surface Mount GaAs MESFET AFM02N6-032 Features • High Gain, 16 dB at 4 GHz, 7.0 dB at 12 GHz ■ Low Noise Figure, 0.55 dB at 4 GHz, 2.2 dB at 12 GHz ■ Ti/Pt/Au Gates ■ Passivated Device ■ Surface Mount Package ■ Available in Tape and Reel


    OCR Scan     		PDF 03Alpha AFM02N6-032 AFM02N6-032 T-143 9435 GM AFM02N6

    95210

    Abstract: No abstract text available
    Text: Hl Alpha Low Noise GaAs MESFET Chip AFM02N6-000 Features Low Noise Figure, 1.0 dB at 12 GHz High Associated Gain, 9.5 dB at 12 GHz High MAG, > 12 dB at 12 GHz 0.25 |im Ti/Pt/Au Gates 400 600 500 1cm = 38.7jim Passivated Surface Description Alpha’s AFM02N6-000 low noise GaAs MESFET


    OCR Scan     		PDF AFM02N6-000 AFM02N6-000 95210

    CI 7422

    Abstract: AFM02N6-000
    Text: ESAlpha Low Noise GaAs MESFET Chip AFM02N6-000 Features • Low Noise Figure, 1.0 dB @ 12 GHz ■ High Associated Gain, 9.5 dB @ 12 GHz ■ High MAG, >12 dB @ 12 GHz ■ 0.25 |im Ti/Pd/Au Gates ■ Passivated Surface Description 1 cm = 38.7 urn The AFM02N6-000 low noise GaAs MESFET chip has


    OCR Scan     		PDF AFM02N6-000 AFM02N6-000 6/99A CI 7422

    Untitled

    Abstract: No abstract text available
    Text: Low Noise Packaged GaAs MESFET AFM02N&-212, AFM02N6-213 Features Drain • Low Noise Figure, 1.1 dB at 12 GHz ■ High Associated Gain, 8.0 dB at 12 GHz ■ High MAG, > 8.5 dB at 12 GHz ■ 0.25 ^im Ti/Pt/Au Gates ■ Passivated Surface ■ Low Cost Metal Ceramic Package


    OCR Scan     		PDF AFM02N AFM02N6-213

    L to Ku Band Low Noise GaAs MESFET

    Abstract: AFM02N6-212 AFM02N6-213 S-12 61770
    Text: Low Noise Packaged GaAs MESFET Chips ESAlpha AFM02N6-212, AFM02N6-213 Features 213 • Low Noise Figure, 1.1 dB @ 12 GHz ■ High Associated Gain, 8.0 dB @ 12 GHz ■ High MAG, > 8.5 dB @ 12 GHz ■ 0.25 |im Ti/Pd/Au Gates ■ Passivated Surface ■ Low Cost Metal Ceramic Package


    OCR Scan     		PDF AFM02N6-212, 6/99A L to Ku Band Low Noise GaAs MESFET AFM02N6-212 AFM02N6-213 S-12 61770