UT8R1M39
Abstract: aeroflex sram edac UT8ER1M32
Text: FOR IMMEDIATE RELEASE: June 1, 2010 CONTACT: Teresa Farris MARCOM Manager Aeroflex Colorado Springs 719-594-8035 voice 719-594-8468 (fax) Email: teresa.farris@aeroflex.com www.aeroflex.com/Memories AEROFLEX ANNOUNCES PRODUCTION OF NEW 32 and 40Mbit SRAM
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40Mbit
UT8ER1M32
32Mbit)
UT8R1M39
40Mbit)
16M/20M
32Mbit
UT8ER1M32
UT8R1M39
aeroflex sram edac
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UT8ER512K32
Abstract: edac SRAM edac UT8ER512K32S aeroflex sram edac
Text: Aeroflex Colorado Springs Errata Date: March 24, 2008 Part Number: UT8ER512K32 Monolithic 16M RadHard SRAM Silicon Revision: Revision B Prototypes Affected Date Codes: All Revision B Prototypes Data Sheet Specification for UT8ER512K32M and UT8ER512K32S RECOMMENDED OPERATING CONDITIONS
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UT8ER512K32
UT8ER512K32M
UT8ER512K32S
156KHz.
edac
SRAM edac
UT8ER512K32S
aeroflex sram edac
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UT8ER512K32
Abstract: RAMDE scrub SRAM edac UT8ER512K32S
Text: Aeroflex Colorado Springs Application Note Designing with the UT8ER512K32 Monolithic 16M RadHardTM SRAM 1. Introduction This application note describes how to use the UT8ER512K32 Monolithic 16M RadHard SRAM in different system configurations, including a detailed look at the bus signals and CPU interface. The reader will also gain an understanding of how error detection and correction EDAC functions and improves error rate.
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UT8ER512K32
70000h
7FF00h
3A500h
55A00h
10500h
000XXh
RAMDE
scrub
SRAM edac
UT8ER512K32S
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AMBA APB UART
Abstract: dlc10 UT699 352-CQFP state machine for ahb to apb bridge AMBA AHB memory controller UT699 memory map UT699 cpci driver ahb fsm SDRAM edac
Text: UT699 32-bit Fault-Tolerant LEON 3FT/SPARCTM V8 Processor Aeroflex Colorado Springs 800-645-8862 www.aeroflex.com/LEON August 2009 UT699 LEON 3FT Description T Operates from 3.3V for I/O and 2.5V for core T Multifunctional memory controller supports PROM, SRAM, SDRAM, and I/O
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UT699
32-bit
-40oC
105oC)
352-pin
484-pin
IEEE754
GR-CPCI-UT699
AMBA APB UART
dlc10
352-CQFP
state machine for ahb to apb bridge
AMBA AHB memory controller
UT699 memory map
UT699 cpci driver
ahb fsm
SDRAM edac
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UT8ER512K32
Abstract: SRAM edac UT8ER512K32S mbe regulator RAM SEU RAM EDAC SEU
Text: Design Information Fact Sheet UT8ER512K32 Monolithic 16M RadHard SRAM INTRODUCTION FEATURES 20ns read, 10ns write maximum access times Functionally compatible with traditional 512K x 32 SRAM devices CMOS compatible inputs and output levels, three-state
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UT8ER512K32
100Krad
SRAM edac
UT8ER512K32S
mbe regulator
RAM SEU
RAM EDAC SEU
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PIN DIAGRAM OF RJ45 to usb
Abstract: PIN DIAGRAM OF RJ45 Intel JS28F640J3 FLASH device RJ45 low connector pcb board UT699 js28f640 WJLXT971A PIN DIAGRAM OF RJ45 10 pin wjlxt971 MATE-N-LOK pinout
Text: GR-UT699 Development Board User Manual AEROFLEX GAISLER AB Rev. 0.3, 2008-10-27 2 GR-UT699 Development Board User Manual Information furnished by Aeroflex Gaisler AB is believed to be accurate and reliable. However, no responsibility is assumed by Aeroflex Gaisler AB for its use, nor for any infringements
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GR-UT699
GR-UT699
PIN DIAGRAM OF RJ45 to usb
PIN DIAGRAM OF RJ45
Intel JS28F640J3 FLASH device
RJ45 low connector pcb board
UT699
js28f640
WJLXT971A
PIN DIAGRAM OF RJ45 10 pin
wjlxt971
MATE-N-LOK pinout
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Untitled
Abstract: No abstract text available
Text: Standard Products UT8ER512K32 Monolithic 16M SRAM Preliminary Data Sheet February, 2009 www.aeroflex.com/memories INTRODUCTION FEATURES 20ns Read, 10ns Write maximum access times Functionally compatible with traditional 512K x 32 SRAM devices CMOS compatible input and output levels, three-state
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UT8ER512K32
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RTAX2000
Abstract: mb 8739 Xilinx VIRTEX-5 xc5vlx50 UT63M143 M38510/55501 5962R99B0106V4C vhdl code manchester encoder UT229FCMV4 h009 SPECIFICATION LEON3FT
Text: A passion for performance. Aeroflex Colorado Springs Aeroflex Gaisler Aeroflex Plainview Product Short Form Microelectronic Solutions July 2009 HiRel from Aeroflex Colorado Springs UT69151 SµMMIT E • UT69151 SµMMIT™ LXE ■ UT69151 SµMMIT™ DXE
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UT691
RTAX2000
mb 8739
Xilinx VIRTEX-5 xc5vlx50
UT63M143
M38510/55501
5962R99B0106V4C
vhdl code manchester encoder
UT229FCMV4
h009 SPECIFICATION
LEON3FT
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UT8SDMQ64M48
Abstract: UT8SDMQ64M40 mev smd diode UT8Q512E UT8R128K32 5962-04 SDRAM UT8SDMQ64M48 die 5962-0422 "rad" sram UT8ER512K32
Text: Aeroflex Colorado Springs A passion for performance. Over 20 years experience in HiRel memories 50 to 300 krads Si 4.0 Mbit to 3.0 Gbit options Best-in-class bit density per square inch Flight proven HiRel Memories V SM D# Q& QM L Fla tpa ck Lat ch Me -Up I
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UT8R51
UT699
UT8SDMQ64M48
UT8SDMQ64M40
mev smd diode
UT8Q512E
UT8R128K32
5962-04
SDRAM UT8SDMQ64M48 die
5962-0422
"rad" sram
UT8ER512K32
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RTAX2000
Abstract: UT16AD80P m38510/55501 UT63M143 MIP7965-750B1 5962-8869203 vhdl code manchester encoder UT54LVDM055LV SMD custom precision rESISTOR network h009 SPECIFICATION
Text: A passion for performance. Aeroflex Colorado Springs Aeroflex Gaisler Aeroflex Plainview Product Short Form Microelectronic Solutions October 2010 HiRel from Aeroflex Colorado Springs UT69151 SµMMIT DXE • UT69151 SµMMIT™ XTE ■ UT69151 SµMMIT™ RTE
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UT691
RTAX2000
UT16AD80P
m38510/55501
UT63M143
MIP7965-750B1
5962-8869203
vhdl code manchester encoder
UT54LVDM055LV
SMD custom precision rESISTOR network
h009 SPECIFICATION
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Untitled
Abstract: No abstract text available
Text: Standard Products UT8ER1M32 32Megabit SRAM MCM UT8ER2M32 64Megabit SRAM MCM UT8ER4M32 128Megabit SRAM MCM Data Sheet January, 2013 www.aeroflex.com/memories INTRODUCTION The UT8ER1M32, UT8ER2M32, and UT8ER4M32 are high performance CMOS static RAM multichip modules MCMs
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UT8ER1M32
32Megabit
UT8ER2M32
64Megabit
UT8ER4M32
128Megabit
UT8ER1M32,
UT8ER2M32,
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two port register
Abstract: Ut90
Text: Semicustom Products UT90nHBD Hardened-by-Design HBD Standard Cell Advanced Data Sheet February 2012 www.aeroflex.com/RadHardASIC FEATURES PRODUCT DESCRIPTION Up to 30,000,000 usable equivalent gates with a 1.0V Core using standard cell architecture The high-performance UT90nHBD Hardened-by-Design
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UT90nHBD
two port register
Ut90
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UT90nHBD
Abstract: leon3 10GBPS krad UT90n
Text: Semicustom Products UT90nHBD Hardened-by-Design HBD Standard Cell Advanced Data Sheet July 2010 www.aeroflex.com/RadHardASIC FEATURES PRODUCT DESCRIPTION Up to 30,000,000 usable equivalent gates with a 1.0V Core using standard cell architecture The high-performance UT90nHBD Hardened-by-Design
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UT90nHBD
leon3
10GBPS
krad
UT90n
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UT8ER512K32
Abstract: No abstract text available
Text: Standard Products UT8ER512K32 Monolithic 16M RadHard SRAM Preliminary Data Sheet September 28, 2006 www.aeroflex.com/radhard INTRODUCTION FEATURES 20ns read, 10ns write maximum access times Functionally compatible with traditional 512K x 32 SRAM devices
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UT8ER512K32
100Krad
100MeV-cm2/mg
01x10-16
156KHz
0E14n/cm2
68-lead
898ein
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Untitled
Abstract: No abstract text available
Text: Standard Products UT8ER512K32 Monolithic 16M RadHard SRAM Preliminary Data Sheet May 21, 2007 www.aeroflex.com/radhardsram INTRODUCTION FEATURES 20ns read, 10ns write maximum access times Functionally compatible with traditional 512K x 32 SRAM devices
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UT8ER512K32
100Krad
100MeV-cm2/mg
01x10-16
156KHz
0E14n/cm2
68-lead
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tsmc 130nm metal process
Abstract: teradyne tiger aeroflex sram edac charactristics of cmos logic gates CCGA 472 leon3 teradyne flex tester CCGA 472 drawing 130NM cmos process parameters tsmc cmos
Text: Semicustom Products UT130nHBD Hardened-by-Design HBD Standard Cell Advanced Data Sheet August 2010 www.aeroflex.com/RadHardASIC FEATURES PRODUCT DESCRIPTION Up to 15,000,000 usable equivalent gates using standard cell architecture The high-performance UT130n HBD Hardened-by-Design
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UT130nHBD
130nm
0x10-10
tsmc 130nm metal process
teradyne tiger
aeroflex sram edac
charactristics of cmos logic gates
CCGA 472
leon3
teradyne flex tester
CCGA 472 drawing
130NM cmos process parameters
tsmc cmos
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UT8ER512K32
Abstract: No abstract text available
Text: Standard Products UT8ER512K32 Monolithic 16M RadHard SRAM Preliminary Data Sheet September, 2006 www.aeroflex.com/radhard INTRODUCTION FEATURES 20ns maximum access time Asynchronous operation, functionally compatible with industry-standard 512K x 32 SRAMs
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UT8ER512K32
100Krad
100MeV-cm2/mg
9x10-16
312KHz
0E14n/cm2
68-lead
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UT8ER512K32
Abstract: UT8ER512K32S UT8ER512K32M aeroflex sram edac
Text: Standard Products UT8ER512K32 Monolithic 16M SRAM Data Sheet June 25, 2010 www.aeroflex.com/memories INTRODUCTION FEATURES 20ns Read, 10ns Write maximum access times Functionally compatible with traditional 512K x 32 SRAM devices CMOS compatible input and output levels, three-state
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UT8ER512K32
UT8ER512K32S
UT8ER512K32M
aeroflex sram edac
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TDQ31
Abstract: No abstract text available
Text: Standard Products UT8ER512K32 Monolithic 16M RadHard SRAM Advanced Data Sheet May, 2006 The UT8ER512K32 is a high-performance CMOS static RAM organized as 524,288 words by 32 bits. Easy memory expansion is provided by active LOW and HIGH chip enables E1, E2 , an
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UT8ER512K32
100Krad
100MeV-cm2/mg
9x10-16
312KHz
0E14n/cm2
68-lead
TDQ31
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aeroflex sram edac
Abstract: Aeroflex International
Text: Standard Products UT8ER512K32 Monolithic 16M RadHard SRAM Advanced Data Sheet May, 2006 www.aeroflex.com/radhard INTRODUCTION FEATURES 20ns maximum access time Asynchronous operation, functionally compatible with industry-standard 512K x 32 SRAMs CMOS compatible inputs and output levels, three-state
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UT8ER512K32
100Krad
100MeV-cm2/mg
9x10-16
312KHz
0E14n/cm2
68-lead
aeroflex sram edac
Aeroflex International
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Untitled
Abstract: No abstract text available
Text: Standard Products UT8ER512K32 Monolithic 16M SRAM Preliminary Data Sheet February, 2009 www.aeroflex.com/memories INTRODUCTION FEATURES 20ns Read, 10ns Write maximum access times Functionally compatible with traditional 512K x 32 SRAM devices CMOS compatible input and output levels, three-state
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UT8ER512K32
111MeV-cm2/mg
0x10-16
6600ns
68-lead
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SRAM edac
Abstract: No abstract text available
Text: Standard Products UT8ER512K32 Monolithic 16M RadHard SRAM Advanced Data Sheet March, 2006 INTRODUCTION FEATURES 20ns maximum access time Asynchronous operation, functionally compatible with industry-standard 512K x 32 SRAMs CMOS compatible inputs and output levels, three-state
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UT8ER512K32
100Krad
100MeV-cm2/mg
9x10-16
312KHz
0E14n/cm2
68-lead
SRAM edac
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UT8ER
Abstract: UT8ER512K
Text: Standard Products UT8ER512K32 Monolithic 16M RadHard SRAM Preliminary Data Sheet September 28, 2006 www.aeroflex.com/radhard INTRODUCTION FEATURES 20ns read, 10ns write maximum access times Functionally compatible with traditional 512K x 32 SRAM devices
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UT8ER512K32
100Krad
100MeV-cm2/mg
01x10-16
156KHz
0E14n/cm2
68-lead
898in
UT8ER
UT8ER512K
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UT8ER512K32
Abstract: aeroflex sram edac
Text: Standard Products UT8ER512K32 Monolithic 16M SRAM Preliminary Data Sheet September 4, 2008 www.aeroflex.com/memories INTRODUCTION FEATURES 20ns Read, 10ns Write maximum access times Functionally compatible with traditional 512K x 32 SRAM devices CMOS compatible input and output levels, three-state
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UT8ER512K32
111MeV-cm2/mg
0x10-16
6600ns
68-lead
aeroflex sram edac
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