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    AEROFLEX SRAM EDAC Search Results

    AEROFLEX SRAM EDAC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    R1LV0408DSP-7LR#S0 Renesas Electronics Corporation Low Power SRAM Visit Renesas Electronics Corporation
    R1WV3216RBG-7SR#S0 Renesas Electronics Corporation Low Power SRAM Visit Renesas Electronics Corporation
    R1LV0816ASD-5SI#S0 Renesas Electronics Corporation Low Power SRAM Visit Renesas Electronics Corporation
    R1LV0408DSP-5SR#S0 Renesas Electronics Corporation Low Power SRAM Visit Renesas Electronics Corporation
    R1Q2A7236ABB-40IB1 Renesas Electronics Corporation 72-Mbit QDR™II SRAM 2-word Burst Visit Renesas Electronics Corporation

    AEROFLEX SRAM EDAC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    UT8R1M39

    Abstract: aeroflex sram edac UT8ER1M32
    Text: FOR IMMEDIATE RELEASE: June 1, 2010 CONTACT: Teresa Farris MARCOM Manager Aeroflex Colorado Springs 719-594-8035 voice 719-594-8468 (fax) Email: teresa.farris@aeroflex.com www.aeroflex.com/Memories AEROFLEX ANNOUNCES PRODUCTION OF NEW 32 and 40Mbit SRAM


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    PDF 40Mbit UT8ER1M32 32Mbit) UT8R1M39 40Mbit) 16M/20M 32Mbit UT8ER1M32 UT8R1M39 aeroflex sram edac

    UT8ER512K32

    Abstract: edac SRAM edac UT8ER512K32S aeroflex sram edac
    Text: Aeroflex Colorado Springs Errata Date: March 24, 2008 Part Number: UT8ER512K32 Monolithic 16M RadHard SRAM Silicon Revision: Revision B Prototypes Affected Date Codes: All Revision B Prototypes Data Sheet Specification for UT8ER512K32M and UT8ER512K32S RECOMMENDED OPERATING CONDITIONS


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    PDF UT8ER512K32 UT8ER512K32M UT8ER512K32S 156KHz. edac SRAM edac UT8ER512K32S aeroflex sram edac

    UT8ER512K32

    Abstract: RAMDE scrub SRAM edac UT8ER512K32S
    Text: Aeroflex Colorado Springs Application Note Designing with the UT8ER512K32 Monolithic 16M RadHardTM SRAM 1. Introduction This application note describes how to use the UT8ER512K32 Monolithic 16M RadHard SRAM in different system configurations, including a detailed look at the bus signals and CPU interface. The reader will also gain an understanding of how error detection and correction EDAC functions and improves error rate.


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    PDF UT8ER512K32 70000h 7FF00h 3A500h 55A00h 10500h 000XXh RAMDE scrub SRAM edac UT8ER512K32S

    AMBA APB UART

    Abstract: dlc10 UT699 352-CQFP state machine for ahb to apb bridge AMBA AHB memory controller UT699 memory map UT699 cpci driver ahb fsm SDRAM edac
    Text: UT699 32-bit Fault-Tolerant LEON 3FT/SPARCTM V8 Processor Aeroflex Colorado Springs 800-645-8862 www.aeroflex.com/LEON August 2009 UT699 LEON 3FT Description T Operates from 3.3V for I/O and 2.5V for core T Multifunctional memory controller supports PROM, SRAM, SDRAM, and I/O


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    PDF UT699 32-bit -40oC 105oC) 352-pin 484-pin IEEE754 GR-CPCI-UT699 AMBA APB UART dlc10 352-CQFP state machine for ahb to apb bridge AMBA AHB memory controller UT699 memory map UT699 cpci driver ahb fsm SDRAM edac

    UT8ER512K32

    Abstract: SRAM edac UT8ER512K32S mbe regulator RAM SEU RAM EDAC SEU
    Text: Design Information Fact Sheet UT8ER512K32 Monolithic 16M RadHard SRAM INTRODUCTION FEATURES ‰ 20ns read, 10ns write maximum access times ‰ Functionally compatible with traditional 512K x 32 SRAM devices ‰ CMOS compatible inputs and output levels, three-state


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    PDF UT8ER512K32 100Krad SRAM edac UT8ER512K32S mbe regulator RAM SEU RAM EDAC SEU

    PIN DIAGRAM OF RJ45 to usb

    Abstract: PIN DIAGRAM OF RJ45 Intel JS28F640J3 FLASH device RJ45 low connector pcb board UT699 js28f640 WJLXT971A PIN DIAGRAM OF RJ45 10 pin wjlxt971 MATE-N-LOK pinout
    Text: GR-UT699 Development Board User Manual AEROFLEX GAISLER AB Rev. 0.3, 2008-10-27 2 GR-UT699 Development Board User Manual Information furnished by Aeroflex Gaisler AB is believed to be accurate and reliable. However, no responsibility is assumed by Aeroflex Gaisler AB for its use, nor for any infringements


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    PDF GR-UT699 GR-UT699 PIN DIAGRAM OF RJ45 to usb PIN DIAGRAM OF RJ45 Intel JS28F640J3 FLASH device RJ45 low connector pcb board UT699 js28f640 WJLXT971A PIN DIAGRAM OF RJ45 10 pin wjlxt971 MATE-N-LOK pinout

    Untitled

    Abstract: No abstract text available
    Text: Standard Products UT8ER512K32 Monolithic 16M SRAM Preliminary Data Sheet February, 2009 www.aeroflex.com/memories INTRODUCTION FEATURES ‰ 20ns Read, 10ns Write maximum access times ‰ Functionally compatible with traditional 512K x 32 SRAM devices ‰ CMOS compatible input and output levels, three-state


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    PDF UT8ER512K32

    RTAX2000

    Abstract: mb 8739 Xilinx VIRTEX-5 xc5vlx50 UT63M143 M38510/55501 5962R99B0106V4C vhdl code manchester encoder UT229FCMV4 h009 SPECIFICATION LEON3FT
    Text: A passion for performance. Aeroflex Colorado Springs Aeroflex Gaisler Aeroflex Plainview Product Short Form Microelectronic Solutions July 2009 HiRel from Aeroflex Colorado Springs UT69151 SµMMIT E • UT69151 SµMMIT™ LXE ■ UT69151 SµMMIT™ DXE


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    PDF UT691 RTAX2000 mb 8739 Xilinx VIRTEX-5 xc5vlx50 UT63M143 M38510/55501 5962R99B0106V4C vhdl code manchester encoder UT229FCMV4 h009 SPECIFICATION LEON3FT

    UT8SDMQ64M48

    Abstract: UT8SDMQ64M40 mev smd diode UT8Q512E UT8R128K32 5962-04 SDRAM UT8SDMQ64M48 die 5962-0422 "rad" sram UT8ER512K32
    Text: Aeroflex Colorado Springs A passion for performance. Over 20 years experience in HiRel memories 50 to 300 krads Si 4.0 Mbit to 3.0 Gbit options Best-in-class bit density per square inch Flight proven HiRel Memories V SM D# Q& QM L Fla tpa ck Lat ch Me -Up I


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    PDF UT8R51 UT699 UT8SDMQ64M48 UT8SDMQ64M40 mev smd diode UT8Q512E UT8R128K32 5962-04 SDRAM UT8SDMQ64M48 die 5962-0422 "rad" sram UT8ER512K32

    RTAX2000

    Abstract: UT16AD80P m38510/55501 UT63M143 MIP7965-750B1 5962-8869203 vhdl code manchester encoder UT54LVDM055LV SMD custom precision rESISTOR network h009 SPECIFICATION
    Text: A passion for performance. Aeroflex Colorado Springs Aeroflex Gaisler Aeroflex Plainview Product Short Form Microelectronic Solutions October 2010 HiRel from Aeroflex Colorado Springs UT69151 SµMMIT DXE • UT69151 SµMMIT™ XTE ■ UT69151 SµMMIT™ RTE


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    PDF UT691 RTAX2000 UT16AD80P m38510/55501 UT63M143 MIP7965-750B1 5962-8869203 vhdl code manchester encoder UT54LVDM055LV SMD custom precision rESISTOR network h009 SPECIFICATION

    Untitled

    Abstract: No abstract text available
    Text: Standard Products UT8ER1M32 32Megabit SRAM MCM UT8ER2M32 64Megabit SRAM MCM UT8ER4M32 128Megabit SRAM MCM Data Sheet January, 2013 www.aeroflex.com/memories INTRODUCTION The UT8ER1M32, UT8ER2M32, and UT8ER4M32 are high performance CMOS static RAM multichip modules MCMs


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    PDF UT8ER1M32 32Megabit UT8ER2M32 64Megabit UT8ER4M32 128Megabit UT8ER1M32, UT8ER2M32,

    two port register

    Abstract: Ut90
    Text: Semicustom Products UT90nHBD Hardened-by-Design HBD Standard Cell Advanced Data Sheet February 2012 www.aeroflex.com/RadHardASIC FEATURES PRODUCT DESCRIPTION  Up to 30,000,000 usable equivalent gates with a 1.0V Core using standard cell architecture The high-performance UT90nHBD Hardened-by-Design


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    PDF UT90nHBD two port register Ut90

    UT90nHBD

    Abstract: leon3 10GBPS krad UT90n
    Text: Semicustom Products UT90nHBD Hardened-by-Design HBD Standard Cell Advanced Data Sheet July 2010 www.aeroflex.com/RadHardASIC FEATURES PRODUCT DESCRIPTION ‰ Up to 30,000,000 usable equivalent gates with a 1.0V Core using standard cell architecture The high-performance UT90nHBD Hardened-by-Design


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    PDF UT90nHBD leon3 10GBPS krad UT90n

    UT8ER512K32

    Abstract: No abstract text available
    Text: Standard Products UT8ER512K32 Monolithic 16M RadHard SRAM Preliminary Data Sheet September 28, 2006 www.aeroflex.com/radhard INTRODUCTION FEATURES ‰ 20ns read, 10ns write maximum access times ‰ Functionally compatible with traditional 512K x 32 SRAM devices


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    PDF UT8ER512K32 100Krad 100MeV-cm2/mg 01x10-16 156KHz 0E14n/cm2 68-lead 898ein

    Untitled

    Abstract: No abstract text available
    Text: Standard Products UT8ER512K32 Monolithic 16M RadHard SRAM Preliminary Data Sheet May 21, 2007 www.aeroflex.com/radhardsram INTRODUCTION FEATURES ‰ 20ns read, 10ns write maximum access times ‰ Functionally compatible with traditional 512K x 32 SRAM devices


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    PDF UT8ER512K32 100Krad 100MeV-cm2/mg 01x10-16 156KHz 0E14n/cm2 68-lead

    tsmc 130nm metal process

    Abstract: teradyne tiger aeroflex sram edac charactristics of cmos logic gates CCGA 472 leon3 teradyne flex tester CCGA 472 drawing 130NM cmos process parameters tsmc cmos
    Text: Semicustom Products UT130nHBD Hardened-by-Design HBD Standard Cell Advanced Data Sheet August 2010 www.aeroflex.com/RadHardASIC FEATURES PRODUCT DESCRIPTION ‰ Up to 15,000,000 usable equivalent gates using standard cell architecture The high-performance UT130n HBD Hardened-by-Design


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    PDF UT130nHBD 130nm 0x10-10 tsmc 130nm metal process teradyne tiger aeroflex sram edac charactristics of cmos logic gates CCGA 472 leon3 teradyne flex tester CCGA 472 drawing 130NM cmos process parameters tsmc cmos

    UT8ER512K32

    Abstract: No abstract text available
    Text: Standard Products UT8ER512K32 Monolithic 16M RadHard SRAM Preliminary Data Sheet September, 2006 www.aeroflex.com/radhard INTRODUCTION FEATURES ‰ 20ns maximum access time ‰ Asynchronous operation, functionally compatible with industry-standard 512K x 32 SRAMs


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    PDF UT8ER512K32 100Krad 100MeV-cm2/mg 9x10-16 312KHz 0E14n/cm2 68-lead

    UT8ER512K32

    Abstract: UT8ER512K32S UT8ER512K32M aeroflex sram edac
    Text: Standard Products UT8ER512K32 Monolithic 16M SRAM Data Sheet June 25, 2010 www.aeroflex.com/memories INTRODUCTION FEATURES ‰ 20ns Read, 10ns Write maximum access times ‰ Functionally compatible with traditional 512K x 32 SRAM devices ‰ CMOS compatible input and output levels, three-state


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    PDF UT8ER512K32 UT8ER512K32S UT8ER512K32M aeroflex sram edac

    TDQ31

    Abstract: No abstract text available
    Text: Standard Products UT8ER512K32 Monolithic 16M RadHard SRAM Advanced Data Sheet May, 2006 The UT8ER512K32 is a high-performance CMOS static RAM organized as 524,288 words by 32 bits. Easy memory expansion is provided by active LOW and HIGH chip enables E1, E2 , an


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    PDF UT8ER512K32 100Krad 100MeV-cm2/mg 9x10-16 312KHz 0E14n/cm2 68-lead TDQ31

    aeroflex sram edac

    Abstract: Aeroflex International
    Text: Standard Products UT8ER512K32 Monolithic 16M RadHard SRAM Advanced Data Sheet May, 2006 www.aeroflex.com/radhard INTRODUCTION FEATURES ‰ 20ns maximum access time ‰ Asynchronous operation, functionally compatible with industry-standard 512K x 32 SRAMs ‰ CMOS compatible inputs and output levels, three-state


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    PDF UT8ER512K32 100Krad 100MeV-cm2/mg 9x10-16 312KHz 0E14n/cm2 68-lead aeroflex sram edac Aeroflex International

    Untitled

    Abstract: No abstract text available
    Text: Standard Products UT8ER512K32 Monolithic 16M SRAM Preliminary Data Sheet February, 2009 www.aeroflex.com/memories INTRODUCTION FEATURES ‰ 20ns Read, 10ns Write maximum access times ‰ Functionally compatible with traditional 512K x 32 SRAM devices ‰ CMOS compatible input and output levels, three-state


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    PDF UT8ER512K32 111MeV-cm2/mg 0x10-16 6600ns 68-lead

    SRAM edac

    Abstract: No abstract text available
    Text: Standard Products UT8ER512K32 Monolithic 16M RadHard SRAM Advanced Data Sheet March, 2006 INTRODUCTION FEATURES ‰ 20ns maximum access time ‰ Asynchronous operation, functionally compatible with industry-standard 512K x 32 SRAMs ‰ CMOS compatible inputs and output levels, three-state


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    PDF UT8ER512K32 100Krad 100MeV-cm2/mg 9x10-16 312KHz 0E14n/cm2 68-lead SRAM edac

    UT8ER

    Abstract: UT8ER512K
    Text: Standard Products UT8ER512K32 Monolithic 16M RadHard SRAM Preliminary Data Sheet September 28, 2006 www.aeroflex.com/radhard INTRODUCTION FEATURES ‰ 20ns read, 10ns write maximum access times ‰ Functionally compatible with traditional 512K x 32 SRAM devices


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    PDF UT8ER512K32 100Krad 100MeV-cm2/mg 01x10-16 156KHz 0E14n/cm2 68-lead 898in UT8ER UT8ER512K

    UT8ER512K32

    Abstract: aeroflex sram edac
    Text: Standard Products UT8ER512K32 Monolithic 16M SRAM Preliminary Data Sheet September 4, 2008 www.aeroflex.com/memories INTRODUCTION FEATURES ‰ 20ns Read, 10ns Write maximum access times ‰ Functionally compatible with traditional 512K x 32 SRAM devices ‰ CMOS compatible input and output levels, three-state


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    PDF UT8ER512K32 111MeV-cm2/mg 0x10-16 6600ns 68-lead aeroflex sram edac