Untitled
Abstract: No abstract text available
Text: Standard Products UT8ER512K32 Monolithic 16M RadHard SRAM Preliminary Data Sheet May 21, 2007 www.aeroflex.com/radhardsram INTRODUCTION FEATURES 20ns read, 10ns write maximum access times Functionally compatible with traditional 512K x 32 SRAM devices
|
Original
|
PDF
|
UT8ER512K32
100Krad
100MeV-cm2/mg
01x10-16
156KHz
0E14n/cm2
68-lead
|
UT8ER
Abstract: UT8ER512K
Text: Standard Products UT8ER512K32 Monolithic 16M RadHard SRAM Preliminary Data Sheet September 28, 2006 www.aeroflex.com/radhard INTRODUCTION FEATURES 20ns read, 10ns write maximum access times Functionally compatible with traditional 512K x 32 SRAM devices
|
Original
|
PDF
|
UT8ER512K32
100Krad
100MeV-cm2/mg
01x10-16
156KHz
0E14n/cm2
68-lead
898in
UT8ER
UT8ER512K
|
TDQ31
Abstract: No abstract text available
Text: Standard Products UT8ER512K32 Monolithic 16M RadHard SRAM Advanced Data Sheet May, 2006 The UT8ER512K32 is a high-performance CMOS static RAM organized as 524,288 words by 32 bits. Easy memory expansion is provided by active LOW and HIGH chip enables E1, E2 , an
|
Original
|
PDF
|
UT8ER512K32
100Krad
100MeV-cm2/mg
9x10-16
312KHz
0E14n/cm2
68-lead
TDQ31
|
UT8ER512K32
Abstract: No abstract text available
Text: Standard Products UT8ER512K32 Monolithic 16M SRAM Data Sheet July 24, 2012 www.aeroflex.com/memories INTRODUCTION FEATURES 20ns Read, 10ns Write maximum access times Functionally compatible with traditional 512K x 32 SRAM devices CMOS compatible input and output levels, three-state
|
Original
|
PDF
|
UT8ER512K32
111MeV-cm2/mg
1x10-16
6600ns
68-lead
|
UT8ER512K32
Abstract: No abstract text available
Text: Standard Products UT8ER512K32 Monolithic 16M RadHard SRAM Preliminary Data Sheet September, 2006 www.aeroflex.com/radhard INTRODUCTION FEATURES 20ns maximum access time Asynchronous operation, functionally compatible with industry-standard 512K x 32 SRAMs
|
Original
|
PDF
|
UT8ER512K32
100Krad
100MeV-cm2/mg
9x10-16
312KHz
0E14n/cm2
68-lead
|
aeroflex sram edac
Abstract: Aeroflex International
Text: Standard Products UT8ER512K32 Monolithic 16M RadHard SRAM Advanced Data Sheet May, 2006 www.aeroflex.com/radhard INTRODUCTION FEATURES 20ns maximum access time Asynchronous operation, functionally compatible with industry-standard 512K x 32 SRAMs CMOS compatible inputs and output levels, three-state
|
Original
|
PDF
|
UT8ER512K32
100Krad
100MeV-cm2/mg
9x10-16
312KHz
0E14n/cm2
68-lead
aeroflex sram edac
Aeroflex International
|
UT8ER512K32
Abstract: SRAM edac UT8ER512K32S mbe regulator RAM SEU RAM EDAC SEU
Text: Design Information Fact Sheet UT8ER512K32 Monolithic 16M RadHard SRAM INTRODUCTION FEATURES 20ns read, 10ns write maximum access times Functionally compatible with traditional 512K x 32 SRAM devices CMOS compatible inputs and output levels, three-state
|
Original
|
PDF
|
UT8ER512K32
100Krad
SRAM edac
UT8ER512K32S
mbe regulator
RAM SEU
RAM EDAC SEU
|
UT8ER512K32
Abstract: UT8ER512K32S UT8ER512K32M aeroflex sram edac
Text: Standard Products UT8ER512K32 Monolithic 16M SRAM Data Sheet June 25, 2010 www.aeroflex.com/memories INTRODUCTION FEATURES 20ns Read, 10ns Write maximum access times Functionally compatible with traditional 512K x 32 SRAM devices CMOS compatible input and output levels, three-state
|
Original
|
PDF
|
UT8ER512K32
UT8ER512K32S
UT8ER512K32M
aeroflex sram edac
|
SRAM edac
Abstract: No abstract text available
Text: Standard Products UT8ER512K32 Monolithic 16M RadHard SRAM Advanced Data Sheet March, 2006 INTRODUCTION FEATURES 20ns maximum access time Asynchronous operation, functionally compatible with industry-standard 512K x 32 SRAMs CMOS compatible inputs and output levels, three-state
|
Original
|
PDF
|
UT8ER512K32
100Krad
100MeV-cm2/mg
9x10-16
312KHz
0E14n/cm2
68-lead
SRAM edac
|
UT8ER512K32
Abstract: SRAM edac RAM EDAC SEU Dose
Text: Standard Products UT8ER512K32 Monolithic 16M RadHard SRAM Preliminary Data Sheet March 4, 2008 www.aeroflex.com/radhardsram INTRODUCTION FEATURES 20ns Read, 10ns Write maximum access times Functionally compatible with traditional 512K x 32 SRAM devices
|
Original
|
PDF
|
UT8ER512K32
100MeV-cm2/mg
01x10-16
156KHz
68-lead
SRAM edac
RAM EDAC SEU
Dose
|
UT8ER512K32
Abstract: UT8ER512K SRAM edac RAM EDAC SEU OP167
Text: Standard Products UT8ER512K32 Monolithic 16M SRAM Data Sheet January 31, 2011 www.aeroflex.com/memories INTRODUCTION FEATURES 20ns Read, 10ns Write maximum access times Functionally compatible with traditional 512K x 32 SRAM devices CMOS compatible input and output levels, three-state
|
Original
|
PDF
|
UT8ER512K32
111MeV-cm2/mg
0x10-16
6600ns
68-lead
UT8ER512K
SRAM edac
RAM EDAC SEU
OP167
|
UT8ER512K32
Abstract: RAMDE scrub SRAM edac UT8ER512K32S
Text: Aeroflex Colorado Springs Application Note Designing with the UT8ER512K32 Monolithic 16M RadHardTM SRAM 1. Introduction This application note describes how to use the UT8ER512K32 Monolithic 16M RadHard SRAM in different system configurations, including a detailed look at the bus signals and CPU interface. The reader will also gain an understanding of how error detection and correction EDAC functions and improves error rate.
|
Original
|
PDF
|
UT8ER512K32
70000h
7FF00h
3A500h
55A00h
10500h
000XXh
RAMDE
scrub
SRAM edac
UT8ER512K32S
|
UT8ER512K32
Abstract: No abstract text available
Text: Standard Products UT8ER512K32 Monolithic 16M SRAM Data Sheet January 31, 2011 www.aeroflex.com/memories INTRODUCTION FEATURES 20ns Read, 10ns Write maximum access times Functionally compatible with traditional 512K x 32 SRAM devices CMOS compatible input and output levels, three-state
|
Original
|
PDF
|
UT8ER512K32
111MeV-cm2/mg
0x10-16
6600ns
68-lead
|
Untitled
Abstract: No abstract text available
Text: Standard Products UT8ER512K32 Monolithic 16M SRAM Preliminary Data Sheet February, 2009 www.aeroflex.com/memories INTRODUCTION FEATURES 20ns Read, 10ns Write maximum access times Functionally compatible with traditional 512K x 32 SRAM devices CMOS compatible input and output levels, three-state
|
Original
|
PDF
|
UT8ER512K32
111MeV-cm2/mg
0x10-16
6600ns
68-lead
|
|
|
Untitled
Abstract: No abstract text available
Text: Standard Products UT8ER512K32 Monolithic 16M SRAM Preliminary Data Sheet February, 2009 www.aeroflex.com/memories INTRODUCTION FEATURES 20ns Read, 10ns Write maximum access times Functionally compatible with traditional 512K x 32 SRAM devices CMOS compatible input and output levels, three-state
|
Original
|
PDF
|
UT8ER512K32
|
UT8ER512K32
Abstract: edac SRAM edac UT8ER512K32S aeroflex sram edac
Text: Aeroflex Colorado Springs Errata Date: March 24, 2008 Part Number: UT8ER512K32 Monolithic 16M RadHard SRAM Silicon Revision: Revision B Prototypes Affected Date Codes: All Revision B Prototypes Data Sheet Specification for UT8ER512K32M and UT8ER512K32S RECOMMENDED OPERATING CONDITIONS
|
Original
|
PDF
|
UT8ER512K32
UT8ER512K32M
UT8ER512K32S
156KHz.
edac
SRAM edac
UT8ER512K32S
aeroflex sram edac
|
UT8ER512K32
Abstract: No abstract text available
Text: Standard Products UT8ER512K32 Monolithic 16M RadHard SRAM Preliminary Data Sheet September 28, 2006 www.aeroflex.com/radhard INTRODUCTION FEATURES 20ns read, 10ns write maximum access times Functionally compatible with traditional 512K x 32 SRAM devices
|
Original
|
PDF
|
UT8ER512K32
100Krad
100MeV-cm2/mg
01x10-16
156KHz
0E14n/cm2
68-lead
898ein
|
UT8ER512K32
Abstract: aeroflex sram edac
Text: Standard Products UT8ER512K32 Monolithic 16M SRAM Preliminary Data Sheet September 4, 2008 www.aeroflex.com/memories INTRODUCTION FEATURES 20ns Read, 10ns Write maximum access times Functionally compatible with traditional 512K x 32 SRAM devices CMOS compatible input and output levels, three-state
|
Original
|
PDF
|
UT8ER512K32
111MeV-cm2/mg
0x10-16
6600ns
68-lead
aeroflex sram edac
|
Memories
Abstract: No abstract text available
Text: Standard Products UT8R512K8 512K x 8 SRAM Data Sheet March 2009 www.aeroflex.com/memories FEATURES 15ns maximum access time Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs CMOS compatible inputs and output levels, three-state
|
Original
|
PDF
|
UT8R512K8
Memories
|
UT8SDMQ64M48
Abstract: UT8SDMQ64M40 mev smd diode UT8Q512E UT8R128K32 5962-04 SDRAM UT8SDMQ64M48 die 5962-0422 "rad" sram UT8ER512K32
Text: Aeroflex Colorado Springs A passion for performance. Over 20 years experience in HiRel memories 50 to 300 krads Si 4.0 Mbit to 3.0 Gbit options Best-in-class bit density per square inch Flight proven HiRel Memories V SM D# Q& QM L Fla tpa ck Lat ch Me -Up I
|
Original
|
PDF
|
UT8R51
UT699
UT8SDMQ64M48
UT8SDMQ64M40
mev smd diode
UT8Q512E
UT8R128K32
5962-04
SDRAM UT8SDMQ64M48 die
5962-0422
"rad" sram
UT8ER512K32
|
Memories
Abstract: UT8R512K8
Text: Standard Products UT8R128K32 128K x 32 SRAM Data Sheet March 2009 www.aeroflex.com/memories INTRODUCTION FEATURES 15ns maximum access time Asynchronous operation, functionally compatible with industry-standard 128K x 32 SRAMs CMOS compatible inputs and output levels, three-state
|
Original
|
PDF
|
UT8R128K32
Memories
UT8R512K8
|
RTAX2000
Abstract: UT16AD80P m38510/55501 UT63M143 MIP7965-750B1 5962-8869203 vhdl code manchester encoder UT54LVDM055LV SMD custom precision rESISTOR network h009 SPECIFICATION
Text: A passion for performance. Aeroflex Colorado Springs Aeroflex Gaisler Aeroflex Plainview Product Short Form Microelectronic Solutions October 2010 HiRel from Aeroflex Colorado Springs UT69151 SµMMIT DXE • UT69151 SµMMIT™ XTE ■ UT69151 SµMMIT™ RTE
|
Original
|
PDF
|
UT691
RTAX2000
UT16AD80P
m38510/55501
UT63M143
MIP7965-750B1
5962-8869203
vhdl code manchester encoder
UT54LVDM055LV
SMD custom precision rESISTOR network
h009 SPECIFICATION
|
Memories
Abstract: UT8CR512K32
Text: Standard Products UT8CR512K32 16 Megabit SRAM Data Sheet March 2009 www.aeroflex.com/Memories INTRODUCTION FEATURES 17ns maximum access time Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs CMOS compatible inputs and output levels, three-state
|
Original
|
PDF
|
UT8CR512K32
Memories
|
Untitled
Abstract: No abstract text available
Text: Standard Products UT9Q512E 512K x 8 RadTol SRAM Data Sheet September, 2008 INTRODUCTION The UT9Q512E RadTol product is a high-performance CMOS static RAM organized as 524,288 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable E , an
|
Original
|
PDF
|
UT9Q512E
|