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    ADVANCED LPSRAM Search Results

    ADVANCED LPSRAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPN8R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 32 A, 0.0084 Ohm@10V, TSON Advance Visit Toshiba Electronic Devices & Storage Corporation
    TPN19008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 34 A, 0.019 Ohm@10V, TSON Advance Visit Toshiba Electronic Devices & Storage Corporation
    TPN12008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 26 A, 0.0123 Ohm@10V, TSON Advance Visit Toshiba Electronic Devices & Storage Corporation
    SSM6J808R Toshiba Electronic Devices & Storage Corporation MOSFET, P-ch, -40 V, -7 A, 0.035 Ohm@10V, TSOP6F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation

    ADVANCED LPSRAM Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary RMLV0416E Series 4Mb Advanced LPSRAM 256k word x 16bit R10DS0205EJ0001 Rev.0.01 2013.09.10 Description The RMLV0416E Series is a family of 4-Mbit static RAMs organized 262,144-word × 16-bit, fabricated by Renesas’s high-performance Advanced LPSRAM technologies. The RMLV0416E Series has realized higher density, higher


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    RMLV0416E 16bit) R10DS0205EJ0001 144-word 16-bit, 44-pin 48-ball PDF

    Untitled

    Abstract: No abstract text available
    Text: RMLV0408E Series 4Mb Advanced LPSRAM 512-kword x 8-bit R10DS0206EJ0100 Rev.1.00 2014.2.27 Description The RMLV0408E Series is a family of 4-Mbit static RAMs organized 524,288-word × 8-bit, fabricated by Renesas’s high-performance Advanced LPSRAM technologies. The RMLV0408E Series has realized higher density, higher


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    RMLV0408E 512-kword R10DS0206EJ0100 288-word 32-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary RMLV0414E Series 4Mb Advanced LPSRAM 256k word x 16bit R10DS0216EJ0001 Rev.0.01 2013.09.10 Description The RMLV0414E Series is a family of 4-Mbit static RAMs organized 262,144-word × 16-bit, fabricated by Renesas’s high-performance Advanced LPSRAM technologies. The RMLV0414E Series has realized higher density, higher


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    RMLV0414E 16bit) R10DS0216EJ0001 144-word 16-bit, 44-pin 45/55ns PDF

    Untitled

    Abstract: No abstract text available
    Text: RMLV0414E Series 4Mb Advanced LPSRAM 256-kword x 16-bit R10DS0216EJ0100 Rev.1.00 2014.2.27 Description The RMLV0414E Series is a family of 4-Mbit static RAMs organized 262,144-word × 16-bit, fabricated by Renesas’s high-performance Advanced LPSRAM technologies. The RMLV0414E Series has realized higher density, higher


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    RMLV0414E 256-kword 16-bit) R10DS0216EJ0100 144-word 16-bit, 44-pin PDF

    RMLV0408EGSB-4S2

    Abstract: RMLV0408EGSB4
    Text: Preliminary RMLV0408E Series 4Mb Advanced LPSRAM 512k word x 8bit R10DS0217EJ0001 Rev.0.01 2013.09.10 Description The RMLV0408E Series is a family of 4-Mbit static RAMs organized 524,288-word × 8-bit, fabricated by Renesas’s high-performance Advanced LPSRAM technologies. The RMLV0408E Series has realized higher density, higher


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    RMLV0408E R10DS0217EJ0001 288-word 32-pin 45/55ns RMLV0408EGSB-4S2 RMLV0408EGSB4 PDF

    Untitled

    Abstract: No abstract text available
    Text: RMLV0416E Series 4Mb Advanced LPSRAM 256-kword x 16-bit R10DS0205EJ0100 Rev.1.00 2014.2.27 Description The RMLV0416E Series is a family of 4-Mbit static RAMs organized 262,144-word × 16-bit, fabricated by Renesas’s high-performance Advanced LPSRAM technologies. The RMLV0416E Series has realized higher density, higher


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    RMLV0416E 256-kword 16-bit) R10DS0205EJ0100 144-word 16-bit, 44-pin PDF

    52-pin uTSOP

    Abstract: 52-pin TSOP
    Text: R1LV1616R Series 16Mb Advanced LPSRAM 1M wordx16bit / 2M wordx8bit REJ03C0101-0201Z Rev.2.01 2005.03.22 Description The R1LV1616R Series is a family of low voltage 16-Mbit static RAMs organized as 1048576-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.


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    R1LV1616R wordx16bit REJ03C0101-0201Z 16-Mbit 1048576-words 16-bit, 52pin 52-pin uTSOP 52-pin TSOP PDF

    52-pin uTSOP

    Abstract: No abstract text available
    Text: R1W V3216R Series 32Mb Advanced LPSRAM 2M wordx16bit REJ03C0215-0200Z Rev.2.00 2005.11.07 Description The R1WV3216R Series is a family of low voltage 32-Mbit static RAMs organized as 2097152-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.


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    V3216R wordx16bit) REJ03C0215-0200Z R1WV3216R 32-Mbit 2097152-words 16-bit, 16Mbit 52-pin uTSOP PDF

    R1LV1616

    Abstract: ECU car R1LV0816A R1LV08 HM62V8100 r1lp0408c m5m5v208akv R1LV0808ASB-5SI M5M5256DVP-70LL M5M5W817
    Text: R1LV0816ABG -5SI, 7SI 8Mb Advanced LPSRAM 512k word x 16bit REJ03C0393-0100 Rev.1.00 2009.12.08 Description The R1LV0816ABG is a family of low voltage 8-Mbit static RAMs organized as 524,288-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.


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    R1LV0816ABG 16bit) REJ03C0393-0100 288-words 16-bit, 48balls R1WV6416R R1LV1616 ECU car R1LV0816A R1LV08 HM62V8100 r1lp0408c m5m5v208akv R1LV0808ASB-5SI M5M5256DVP-70LL M5M5W817 PDF

    RENESAS tft application notes

    Abstract: R1LV1616R R1LV1616RBG-5S R1LV1616RSA-5S uTSOP
    Text: R1LV1616R Series 16Mb Advanced LPSRAM 1M wordx16bit / 2M wordx8bit REJ03C0101-0300Z Rev.3.00 2007.08.28 Description The R1LV1616R Series is a family of low voltage 16-Mbit static RAMs organized as 1048576-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.


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    R1LV1616R wordx16bit REJ03C0101-0300Z 16-Mbit 1048576-words 16-bit, 52pin RENESAS tft application notes R1LV1616RBG-5S R1LV1616RSA-5S uTSOP PDF

    Untitled

    Abstract: No abstract text available
    Text: R1LV1616R Series 16Mb Advanced LPSRAM 1M wordx16bit / 2M wordx8bit REJ03C0101-0400Z Rev.4.00 2007.09.12 Description The R1LV1616R Series is a family of low voltage 16-Mbit static RAMs organized as 1048576-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.


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    R1LV1616R wordx16bit REJ03C0101-0400Z 16-Mbit 1048576-words 16-bit, 52pin PDF

    Untitled

    Abstract: No abstract text available
    Text: R1LV0816ABG -5SI, 7SI 8Mb Advanced LPSRAM 512k word x 16bit REJ03C0393-0100 Rev.1.00 2009.12.08 Description The R1LV0816ABG is a family of low voltage 8-Mbit static RAMs organized as 524,288-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.


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    R1LV0816ABG 16bit) REJ03C0393-0100 288-words 16-bit, 48balls PDF

    0.4mm pitch BGA

    Abstract: 52-pin uTSOP din 6887 R1LV1616R R1LV1616RBG-5S R1LV1616RSA-5S
    Text: R1LV1616R Series 16Mb Advanced LPSRAM 1M wordx16bit / 2M wordx8bit REJ03C0101-0400Z Rev.4.00 2007.09.12 Description The R1LV1616R Series is a family of low voltage 16-Mbit static RAMs organized as 1048576-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.


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    R1LV1616R wordx16bit REJ03C0101-0400Z 16-Mbit 1048576-words 16-bit, 52pin 0.4mm pitch BGA 52-pin uTSOP din 6887 R1LV1616RBG-5S R1LV1616RSA-5S PDF

    R1LV1616RBA-5SI

    Abstract: R1LV1616R R1LV1616RBA uTSOP
    Text: R1LV1616RBA-5SI 16Mb Advanced LPSRAM 1M wordx16bit / 2M wordx8bit REJ03C0340-0001 Rev.0.01 2007.10.31 Description The R1LV1616R Series is a family of low voltage 16-Mbit static RAMs organized as 1048576-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.


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    R1LV1616RBA-5SI wordx16bit REJ03C0340-0001 R1LV1616R 16-Mbit 1048576-words 16-bit, R1LV1616RBA 48balls R1LV1616RBA-5SI uTSOP PDF

    Untitled

    Abstract: No abstract text available
    Text: R1LV0816ABG -5SI, 7SI 8Mb Advanced LPSRAM 512k word x 16bit REJ03C0393-0100 Rev.1.00 2009.12.08 Description The R1LV0816ABG is a family of low voltage 8-Mbit static RAMs organized as 524,288-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.


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    R1LV0816ABG 16bit) REJ03C0393-0100 288-words 16-bit, 48balls PDF

    Untitled

    Abstract: No abstract text available
    Text: R1LV0816ABG -5SI, 7SI 8Mb Advanced LPSRAM 512k word x 16bit REJ03C0393-0100 Rev.1.00 2009.12.08 Description The R1LV0816ABG is a family of low voltage 8-Mbit static RAMs organized as 524,288-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.


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    R1LV0816ABG 16bit) REJ03C0393-0100 288-words 16-bit, 48balls PDF

    52-pin uTSOP

    Abstract: 52-pin TSOP 52PTG R1WV3216R RENESAS tft application notes uTSOP
    Text: R1W V3216R Series 32Mb Advanced LPSRAM 2M wordx16bit REJ03C0215-0300Z Rev.3.00 2008.03.03 Description The R1WV3216R Series is a family of low voltage 32-Mbit static RAMs organized as 2097152-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.


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    V3216R wordx16bit) REJ03C0215-0300Z R1WV3216R 32-Mbit 2097152-words 16-bit, 16Mbit 52-pin uTSOP 52-pin TSOP 52PTG RENESAS tft application notes uTSOP PDF

    uTSOP

    Abstract: 52-pin uTSOP
    Text: R1W V3216R Series 32Mb Advanced LPSRAM 2M wordx16bit REJ03C0215-0300Z Rev.3.00 2008.03.03 Description The R1WV3216R Series is a family of low voltage 32-Mbit static RAMs organized as 2097152-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.


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    V3216R wordx16bit) REJ03C0215-0300Z R1WV3216R 32-Mbit 2097152-words 16-bit, 16Mbit uTSOP 52-pin uTSOP PDF

    Untitled

    Abstract: No abstract text available
    Text: R1W V3216R Series 32Mb Advanced LPSRAM 2M wordx16bit REJ03C0215-0300Z Rev.3.00 2008.03.03 Description The R1WV3216R Series is a family of low voltage 32-Mbit static RAMs organized as 2097152-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.


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    V3216R wordx16bit) REJ03C0215-0300Z R1WV3216R 32-Mbit 2097152-words 16-bit, 16Mbit PDF

    R1LV0816ASB-5SI

    Abstract: R1LV0816A
    Text: R1LV0816ASB – 5SI, 7SI 8Mb Advanced LPSRAM 512k word x 16bit REJ03C0387-0100 Rev.1.00 2009.12.07 Description The R1LV0816ASB is a family of low voltage 8-Mbit static RAMs organized as 524,288-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.


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    R1LV0816ASB 16bit) REJ03C0387-0100 R1LV0816ASB 288-words 16-bit, 44pin 44-pin R1LV0816ASB-5SI R1LV0816A PDF

    R1LV0808ASB-5Si

    Abstract: R1LV08 r1lv0808 R1LV0808ASB 44P3F
    Text: R1LV0808ASB – 5SI, 7SI 8Mb Advanced LPSRAM 1024k word x 8bit REJ03C0394-0100 Rev.1.00 2009.12.08 Description The R1LV0808ASB is a family of low voltage 8-Mbit static RAMs organized as 1,048,576-words by 8-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.


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    R1LV0808ASB 1024k REJ03C0394-0100 R1LV0808ASB 576-words R1LV08808ASB 44pin 44-pin R1LV0808ASB-5Si R1LV08 r1lv0808 44P3F PDF

    Untitled

    Abstract: No abstract text available
    Text: Specifications in this document are tentative and may be subject to change. R1LP5256E Series 256Kb Advanced LPSRAM 32k word x 8bit R10DS0070EJ0001 Rev.0.01 2010.12.09 Description The R1LP5256E Series is a family of low voltage 256-Kbit static RAMs organized as 32,768-word by 8-bit, fabricated


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    R1LP5256E 256Kb R10DS0070EJ0001 256-Kbit 768-word 28-pin PDF

    R1LV0816ASB

    Abstract: R1LV0816ASB-5SI R1LV0816A R1LV0816ASB-7SI
    Text: R1LV0816ASB – 5SI, 7SI 8Mb Advanced LPSRAM 512k word x 16bit REJ03C0387-0100 Rev.1.00 2009.12.07 Description The R1LV0816ASB is a family of low voltage 8-Mbit static RAMs organized as 524,288-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.


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    R1LV0816ASB 16bit) REJ03C0387-0100 R1LV0816ASB 288-words 16-bit, 44pin 44-pin R1LV0816ASB-5SI R1LV0816A R1LV0816ASB-7SI PDF

    Untitled

    Abstract: No abstract text available
    Text: R1LV0816ASB – 5SI, 7SI 8Mb Advanced LPSRAM 512k word x 16bit REJ03C0387-0100 Rev.1.00 2009.12.07 Description The R1LV0816ASB is a family of low voltage 8-Mbit static RAMs organized as 524,288-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.


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    R1LV0816ASB 16bit) REJ03C0387-0100 R1LV0816ASB 288-words 16-bit, 44pin 44-pin PDF