44P3F
Abstract: No abstract text available
Text: JEITA Package Code P-TSOP 2 44-10.16x18.41-0.80 RENESAS Code PTSB0044GD-B Previous Code 44P3F-B MASS[Typ.] 0.4g c 1 F NOTE) 1. DIMENSIONS "*1" AND "*2" DO NOT INCLUDE MOLD FLASH. 2. DIMENSION "*3" DOES NOT INCLUDE TRIM OFFSET. *1 E HE 22 Z Z1 23 44 Detail G
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16x18
PTSB0044GD-B
44P3F-B
44P3F
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R1LV0808ASB-5Si
Abstract: R1LV08 r1lv0808 R1LV0808ASB 44P3F
Text: R1LV0808ASB – 5SI, 7SI 8Mb Advanced LPSRAM 1024k word x 8bit REJ03C0394-0100 Rev.1.00 2009.12.08 Description The R1LV0808ASB is a family of low voltage 8-Mbit static RAMs organized as 1,048,576-words by 8-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.
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R1LV0808ASB
1024k
REJ03C0394-0100
R1LV0808ASB
576-words
R1LV08808ASB
44pin
44-pin
R1LV0808ASB-5Si
R1LV08
r1lv0808
44P3F
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R1LV0816ASB
Abstract: nec 44pin R1LV0816A R1LV0816ASB-5SI R1LV0816ASB-5S
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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ic tlp 759
Abstract: SL-BC050515TJ-1 JHB-TQ121214-M L196-49 L196-65A PTB54C SL-BG060615TJ-2 SL-BG060615TJ-1 ST-TQ070710TJ-1 PVQN0020KB-A
Text: Unit:mm The pin1 is located in the hatching portion Note : Numbers in parentheses are the numbers of Ics contained in five trays per inner box, and those without parentheses are the numbers of Ics contained in eight or nine trays per inner box.
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PVQN0020KB-A
PVQN0052KA-A
PVQN0064LB-A
PVQN0032KA-A
PVQN0032KB-A
PVQN0068KA-A
PVQN0048KA-A
PVQN0052LE-A
PVQN0036KA-A
JHB-PBG3131173
ic tlp 759
SL-BC050515TJ-1
JHB-TQ121214-M
L196-49
L196-65A
PTB54C
SL-BG060615TJ-2
SL-BG060615TJ-1
ST-TQ070710TJ-1
PVQN0020KB-A
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Untitled
Abstract: No abstract text available
Text: R1LV0216BSB 2Mb Advanced LPSRAM 128k word x 16bit R10DS0051EJ0100 Rev.1.00 2011.03.30 Description The R1LV0216BSB is a family of low voltage 2-Mbit static RAMs organized as 131,072-word by 16-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies. The R1LV0216BSB has realized higher density,
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R1LV0216BSB
16bit)
R10DS0051EJ0100
R1LV0216BSB
072-word
16-bit,
44-pin
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r1lv0808
Abstract: R1LV0808ASB-5SI
Text: R1LV0808ASB – 5SI, 7SI 8Mb Advanced LPSRAM 1024k word x 8bit REJ03C0394-0100 Rev.1.00 2009.12.08 Description The R1LV0808ASB is a family of low voltage 8-Mbit static RAMs organized as 1,048,576-words by 8-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.
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R1LV0808ASB
1024k
REJ03C0394-0100
R1LV0808ASB
576-words
R1LV08808ASB
44pin
44-pin
r1lv0808
R1LV0808ASB-5SI
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R1LV0816ASB-5SI
Abstract: R1LV0816A
Text: R1LV0816ASB – 5SI, 7SI 8Mb Advanced LPSRAM 512k word x 16bit REJ03C0387-0100 Rev.1.00 2009.12.07 Description The R1LV0816ASB is a family of low voltage 8-Mbit static RAMs organized as 524,288-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.
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R1LV0816ASB
16bit)
REJ03C0387-0100
R1LV0816ASB
288-words
16-bit,
44pin
44-pin
R1LV0816ASB-5SI
R1LV0816A
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Untitled
Abstract: No abstract text available
Text: R1LV0216BSB 2Mb Advanced LPSRAM 128k word x 16bit R10DS0051EJ0100 Rev.1.00 2011.03.30 Description The R1LV0216BSB is a family of low voltage 2-Mbit static RAMs organized as 131,072-word by 16-bit, fabricated by Renesas’s high-performance 0.15um CMOS and TFT technologies. The R1LV0216BSB has realized higher density,
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R1LV0216BSB
16bit)
R10DS0051EJ0100
R1LV0216BSB
072-word
16-bit,
44-pin
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R1LV0816ASB
Abstract: R1LV0816ASB-5SI R1LV0816A R1LV0816ASB-7SI
Text: R1LV0816ASB – 5SI, 7SI 8Mb Advanced LPSRAM 512k word x 16bit REJ03C0387-0100 Rev.1.00 2009.12.07 Description The R1LV0816ASB is a family of low voltage 8-Mbit static RAMs organized as 524,288-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.
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R1LV0816ASB
16bit)
REJ03C0387-0100
R1LV0816ASB
288-words
16-bit,
44pin
44-pin
R1LV0816ASB-5SI
R1LV0816A
R1LV0816ASB-7SI
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Untitled
Abstract: No abstract text available
Text: R1LV0816ASB – 5SI, 7SI 8Mb Advanced LPSRAM 512k word x 16bit REJ03C0387-0100 Rev.1.00 2009.12.07 Description The R1LV0816ASB is a family of low voltage 8-Mbit static RAMs organized as 524,288-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.
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R1LV0816ASB
16bit)
REJ03C0387-0100
R1LV0816ASB
288-words
16-bit,
44pin
44-pin
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MTE3216H-32P2M-A
Abstract: PRSP0032DA-A PTSB0044GA-A 48P3R PTSA0032KA-B 1895 ic TE322 32P3H- E
Text: Standard Orientation of Package The pin 1 is located in the hatching portion. Reel off direction The pin 1 may also be located in the following portion for reverse bent packages and some QFPs. Reel off direction ReelType TYPE A TYPE B A 254 330 N 100 100
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32-mm
MTE3212H-32P3H-A
MTE3216H-28P3Y
MTE3216H-32P2M-A
MTE3216H-50P3W
MTE3224H-100P6Q-A
TE3216-16P
TE3216-30P
TE3224-7P
TE3224-15P
MTE3216H-32P2M-A
PRSP0032DA-A
PTSB0044GA-A
48P3R
PTSA0032KA-B
1895 ic
TE322
32P3H- E
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Untitled
Abstract: No abstract text available
Text: R1LV0808ASB 5SI, 7SI 8Mb Advanced LPSRAM 1024k word x 8bit REJ03C0394-0100 Rev.1.00 2009.12.08 Description The R1LV0808ASB is a family of low voltage 8-Mbit static RAMs organized as 1,048,576-words by 8-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.
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R1LV0808ASB
1024k
REJ03C0394-0100
R1LV0808ASB
576-words
R1LV08808ASB
44pin
44-pin
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r1lv0808
Abstract: r1lv0808asb-5si
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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