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    ACY SMD Search Results

    ACY SMD Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    BLM15PX121BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 120ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX181SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 180ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM21HE802SN1L Murata Manufacturing Co Ltd FB SMD 0805inch 8000ohm NONAUTO Visit Murata Manufacturing Co Ltd
    BLM15PX330BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 33ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX600SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 60ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM21HE601SN1L Murata Manufacturing Co Ltd FB SMD 0805inch 600ohm NONAUTO Visit Murata Manufacturing Co Ltd

    ACY SMD Datasheets Context Search

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    acy smd

    Abstract: No abstract text available
    Text: Honeyw ell.com http://w w w .honeyw ell.com Test & Measurement (https://measurementsensors.honeyw ell.com/) Sensing and Control Search the entire website and product database (/) HOME ABOUT US (/about honeyw ell (/sensinghome) sensing and control) KEY INDUSTRIES


    Original     		PDF 173-501APC-301 acy smd

    Untitled

    Abstract: No abstract text available
    Text: 256Mb: x16, x32 2.5V VEXT, 1.8V VDD, 1.8V VDDQ, RLDRAM REDUCED LATENCY DRAM RLDRAM MT49H8M32 – 1 Meg x 32 x 8 Banks MT49H16M16 – 2 Meg x 16 x 8 Banks Features Figure 1: 144-Ball µFBGA • 256Mb • Organization 8 Meg x 32, 16 Meg x 16 in 8 banks


    Original     		PDF 256Mb: MT49H8M32 MT49H16M16 144-Ball 256Mb 09005aef81121545/source: 09005aef810c0ffc 256Mbx16x32RLDRAM

    Untitled

    Abstract: No abstract text available
    Text: 256Mb: x16, x32 2.5V VEXT, 1.8V VDD, 1.8V VDDQ, RLDRAM REDUCED LATENCY DRAM RLDRAM MT49H8M32 – 1 Meg x 32 x 8 Banks MT49H16M16 – 2 Meg x 16 x 8 Banks Features Figure 1: 144-Ball µFBGA • 256Mb • Organization 8 Meg x 32, 16 Meg x 16 in 8 banks


    Original     		PDF 256Mb: 256Mb 09005aef81121545/source: 09005aef810c0ffc 256Mbx16x32RLDRAM

    smd transistor marking HT1

    Abstract: 256Mb SMD d1c smd transistor d4d MT49H16M16 MT49H8M32 F1198 38P11
    Text: 256Mb: x16, x32 2.5V VEXT, 1.8V VDD, 1.8V VDDQ, RLDRAM Features Reduced Latency DRAM RLDRAM MT49H8M32 – 1 Meg x 32 x 8 Banks MT49H16M16 – 2 Meg x 16 x 8 Banks For the latest data sheet, refer to Micron’s Web site: www.micron.com/products/dram/rldram/


    Original     		PDF 256Mb: MT49H8M32 MT49H16M16 144-Ball se-3900 09005aef81121545/source: 09005aef810c0ffc 256Mbx16x32RLDRAM smd transistor marking HT1 256Mb SMD d1c smd transistor d4d MT49H16M16 MT49H8M32 F1198 38P11

    Untitled

    Abstract: No abstract text available
    Text: 256Mb: x16, x32 2.5V VEXT, 1.8V VDD, 1.8V VDDQ, RLDRAM REDUCED LATENCY DRAM RLDRAM MT49H8M32 – 1 Meg x 32 x 8 Banks MT49H16M16 – 2 Meg x 16 x 8 Banks Features Figure 1: 144-Ball µFBGA • 256Mb • Organization 8 Meg x 32, 16 Meg x 16 in 8 banks


    Original     		PDF 256Mb: 256Mb 09005aef81121545/source: 09005aef810c0ffc 256Mbx16x32RLDRAM

    BA6A

    Abstract: marking code d2c smd
    Text: 256Mb: x16, x32 2.5V VEXT, 1.8V VDD, 1.8V VDDQ, RLDRAM REDUCED LATENCY DRAM RLDRAM MT49H8M32 – 1 Meg x 32 x 8 Banks MT49H16M16 – 2 Meg x 16 x 8 Banks Features Figure 1: 144-Ball µFBGA • 256Mb • Organization 8 Meg x 32, 16 Meg x 16 in 8 banks


    Original     		PDF 256Mb: 256Mb 09005aef81121545/source: 09005aef810c0ffc 256Mbx16x32RLDRAM BA6A marking code d2c smd

    Untitled

    Abstract: No abstract text available
    Text: 256Mb: x16, x32 2.5V VEXT, 1.8V VDD, 1.8V VDDQ, RLDRAM Features Reduced Latency DRAM RLDRAM MT49H8M32 – 1 Meg x 32 x 8 banks MT49H16M16 – 2 Meg x 16 x 8 banks For the latest data sheet, refer to Micron’s Web site: www.micron.com/products/dram/rldram/


    Original     		PDF 256Mb: MT49H8M32 MT49H16M16 09005aef81121545/source: 09005aef810c0ffc 256Mbx16x32RLDRAM

    WL 431

    Abstract: 431 SMD CODE MARKING smd marking AB 6 PIN INFINEON PART MARKING smd transistor d4d RC-5 receiver transistor smd code marking 431 transistor SMD DK SMD CODE N10 smd code marking wl
    Text: 256Mb: x16, x32 2.5V VEXT, 1.8V VDD, 1.8V VDDQ, RLDRAM Features REDUCED LATENCY DRAM RLDRAM MT49H8M32 – 1 Meg x 32 x 8 banks MT49H16M16 – 2 Meg x 16 x 8 banks For the latest data sheet, refer to Micron’s Web site: www.micron.com/rldram Features Figure 1:


    Original     		PDF 256Mb: MT49H8M32 MT49H16M16 09005aef81121545/source: 09005aef810c0ffc 256Mbx16x32RLDRAM WL 431 431 SMD CODE MARKING smd marking AB 6 PIN INFINEON PART MARKING smd transistor d4d RC-5 receiver transistor smd code marking 431 transistor SMD DK SMD CODE N10 smd code marking wl

    smd marking codes BA5

    Abstract: MT49H16M18C
    Text: ADVANCE‡ 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C FEATURES Figure 1 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization - 16 Meg x 18, 32 Meg x 9 Separate I/O


    Original     		PDF 288Mb 288Mb MT49H16M18C smd marking codes BA5

    SMD d1c

    Abstract: SMD MARKING CODE ACY qkx capacitor smd codes marking A21 MT49H16M18C
    Text: ADVANCE‡ 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C FEATURES Figure 1 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization - 16 Meg x 18, 32 Meg x 9 Separate I/O


    Original     		PDF 288Mb 288Mb clo68-3900 MT49H16M18C SMD d1c SMD MARKING CODE ACY qkx capacitor smd codes marking A21

    MT49H16M18C

    Abstract: No abstract text available
    Text: 16 Meg x 18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II Features 288Mb SIO Reduced Latency RLDRAM II MT49H16M18C For the latest data sheet, refer to Micron’s Web site: www.micron.com/rldram Features Figure 1: • 400 MHz DDR operation (800 Mb/s/pin data rate)


    Original     		PDF 288Mb MT49H16M18C 09005aef80a41b59/Source: 09005aef811ba111 MT49H8M18C MT49H16M18C

    15READ

    Abstract: marking ba5 MT49H8M18C MT49H16M18C
    Text: 288Mb: 16 Meg x 18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II Features 288Mb SIO Reduced Latency RLDRAM II MT49H16M18C For the latest data sheet, refer to Micron’s Web site: www.micron.com/rldram Features Figure 1: • 400 MHz DDR operation (800 Mb/s/pin data rate)


    Original     		PDF 288Mb: 288Mb MT49H16M18C 09005aef80a41b59/Source: 09005aef811ba111 MT49H8M18C 15READ marking ba5 MT49H16M18C

    smd dk qk

    Abstract: SMD MARKING CODE ACY smd marking codes BA5 smd marking codes BA2 RLDRAM MT49H16M18C
    Text: ADVANCE‡ 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C FEATURES Figure 1 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization - 16 Meg x 18, 32 Meg x 9 Separate I/O


    Original     		PDF 288Mb 288Mb clo68-3900 MT49H16M18C smd dk qk SMD MARKING CODE ACY smd marking codes BA5 smd marking codes BA2 RLDRAM

    MT49H16M18C

    Abstract: No abstract text available
    Text: PRELIMINARY‡ 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C Features Figure 1: 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization • 16 Meg x 18, 32 Meg x 9 Separate I/O


    Original     		PDF 288Mb 288Mb MT49H8M18C MT49H16M18C

    MT49H16M18C

    Abstract: No abstract text available
    Text: ADVANCE‡ 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C FEATURES Figure 1 144-Ball µBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization - 16 Meg x 18, 32 Meg x 9 Separate I/O


    Original     		PDF 288Mb 288Mb clo68-3900 MT49H16M18C

    BA5 marking

    Abstract: BA7 marking plastic BA5 marking code A53 SMD Marking Code ba7 transistor SMD MARKING CODE ACY MT49H16M18C smd cod RLDRAM A22 SMD MARKING CODE
    Text: 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C Features Figure 1: 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization • 16 Meg x 18, 32 Meg x 9 Separate I/O


    Original     		PDF 288Mb MT49H16M18C MT49H32M9C 144-Ball 288Mb 09005aef80a41b59/zip: 09005aef811ba111 MT49H8M18C BA5 marking BA7 marking plastic BA5 marking code A53 SMD Marking Code ba7 transistor SMD MARKING CODE ACY MT49H16M18C smd cod RLDRAM A22 SMD MARKING CODE

    MT49H16M18

    Abstract: No abstract text available
    Text: PRELIMINARY‡ 8 MEG x 36, 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II 288MB CIO REDUCED LATENCY RLDRAM II MT49H8M36 MT49H16M18 MT49H32M9 Features Figure 1: 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization


    Original     		PDF 288MB 288Mb 09005aef809f284b MT49H8M36 MT49H16M18

    09005aef809f284b

    Abstract: No abstract text available
    Text: 8 MEG x 36, 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II 288MB CIO REDUCED LATENCY RLDRAM II MT49H8M36 MT49H16M18 MT49H32M9‡ Features Figure 1: 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization


    Original     		PDF 288MB 288Mb MT49H8M36 MT49H16M18 09005aef80a41b46/zip: 09005aef809f284b

    hspice MT49H16M36

    Abstract: MT49H16M36FM MT49H16M36 MT49H32M18FM
    Text: Advance‡ 576Mb: x36, x18, x9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II Features 576Mb CIO Reduced Latency RLDRAM II MT49H16M36 MT49H32M18 MT49H64M9 For the latest data sheet, refer to Micron’s Web site: www.micron.com/rldram Features Figure 1: • 533 MHz DDR operation (1,067 Mb/s/pin data rate)


    Original     		PDF 576Mb: 576Mb MT49H16M36 MT49H32M18 MT49H64M9 09005aef81fe35b2/Source: 09005aef81f83d49 hspice MT49H16M36 MT49H16M36FM MT49H32M18FM

    MT49H16M18

    Abstract: No abstract text available
    Text: PRELIMINARY‡ 8 MEG x 36, 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II 288Mb CIO REDUCED LATENCY RLDRAM II MT49H8M36 MT49H16M18 MT49H32M9 Features Figure 1: 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization


    Original     		PDF 288Mb 288Mb MT49H8M36 MT49H16M18

    MARKING H1 AMP

    Abstract: MT49H16M18
    Text: ADVANCE‡ 8 MEG x 36, 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II 288Mb CIO REDUCED LATENCY RLDRAM II MT49H8M36 MT49H16M18 MT49H32M9 FEATURES Figure 1 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization


    Original     		PDF 288Mb 288Mb output0006, MT49H8M36 MARKING H1 AMP MT49H16M18

    plastic BA7 marking code

    Abstract: No abstract text available
    Text: ADVANCE‡ 8 MEG x 36, 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II 288Mb CIO REDUCED LATENCY RLDRAM II MT49H8M36 MT49H16M18 MT49H32M9 FEATURES Figure 1 144-Ball µBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization


    Original     		PDF 288Mb 288Mb output0006, MT49H8M36 plastic BA7 marking code

    MT49H16M18

    Abstract: No abstract text available
    Text: PRELIMINARY‡ 8 MEG x 36, 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II 288MB CIO REDUCED LATENCY RLDRAM II MT49H8M36 MT49H16M18 MT49H32M9 Features Figure 1: 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization


    Original     		PDF 288MB 288Mb MT49H8M36 MT49H16M18

    SAF-C515C

    Abstract: No abstract text available
    Text: • a53SbDS DQfl3SMb 3 1 7 Device Specifications C515C SIEMENS 10 Device Specifications 10.1 A bsolute M aximum Ratings Ambient temperature under bias TA . 0 'C to + 110 °C Storage temperature ( T St ) . - 65 "C to + 150 °C


    OCR Scan     		PDF a53SbDS C515C 235b05 P-MQFP-80-1 CI80x SAF-C515C