Untitled
Abstract: No abstract text available
Text: 256Mb: x16, x32 2.5V VEXT, 1.8V VDD, 1.8V VDDQ, RLDRAM REDUCED LATENCY DRAM RLDRAM MT49H8M32 – 1 Meg x 32 x 8 Banks MT49H16M16 – 2 Meg x 16 x 8 Banks Features Figure 1: 144-Ball µFBGA • 256Mb • Organization 8 Meg x 32, 16 Meg x 16 in 8 banks
|
Original
|
PDF
|
256Mb:
256Mb
09005aef81121545/source:
09005aef810c0ffc
256Mbx16x32RLDRAM
|
Untitled
Abstract: No abstract text available
Text: 256Mb: x16, x32 2.5V VEXT, 1.8V VDD, 1.8V VDDQ, RLDRAM REDUCED LATENCY DRAM RLDRAM MT49H8M32 – 1 Meg x 32 x 8 Banks MT49H16M16 – 2 Meg x 16 x 8 Banks Features Figure 1: 144-Ball µFBGA • 256Mb • Organization 8 Meg x 32, 16 Meg x 16 in 8 banks
|
Original
|
PDF
|
256Mb:
MT49H8M32
MT49H16M16
144-Ball
256Mb
09005aef81121545/source:
09005aef810c0ffc
256Mbx16x32RLDRAM
|
Untitled
Abstract: No abstract text available
Text: 256Mb: x16, x32 2.5V VEXT, 1.8V VDD, 1.8V VDDQ, RLDRAM REDUCED LATENCY DRAM RLDRAM MT49H8M32 – 1 Meg x 32 x 8 Banks MT49H16M16 – 2 Meg x 16 x 8 Banks Features Figure 1: 144-Ball µFBGA • 256Mb • Organization 8 Meg x 32, 16 Meg x 16 in 8 banks
|
Original
|
PDF
|
256Mb:
256Mb
09005aef81121545/source:
09005aef810c0ffc
256Mbx16x32RLDRAM
|
marking d6b
Abstract: No abstract text available
Text: ADVANCE‡ 256Mb: x16, x32 2.5V VEXT, 1.8V VDD, 1.8V VDDQ, RLDRAM REDUCED LATENCY DRAM RLDRAM MT49H8M32 – 1 Meg x 32 x 8 Banks MT49H16M16 – 2 Meg x 16 x 8 Banks Features Figure 1: 144 Ball µFBGA • 256Mb • Organization 8 Meg x 32, 16 Meg x 16 in 8 banks
|
Original
|
PDF
|
256Mb:
256Mb
09005aef810c0ffc
256Mbx16x32RLDRAM
marking d6b
|
smd transistor marking HT1
Abstract: 256Mb SMD d1c smd transistor d4d MT49H16M16 MT49H8M32 F1198 38P11
Text: 256Mb: x16, x32 2.5V VEXT, 1.8V VDD, 1.8V VDDQ, RLDRAM Features Reduced Latency DRAM RLDRAM MT49H8M32 – 1 Meg x 32 x 8 Banks MT49H16M16 – 2 Meg x 16 x 8 Banks For the latest data sheet, refer to Micron’s Web site: www.micron.com/products/dram/rldram/
|
Original
|
PDF
|
256Mb:
MT49H8M32
MT49H16M16
144-Ball
se-3900
09005aef81121545/source:
09005aef810c0ffc
256Mbx16x32RLDRAM
smd transistor marking HT1
256Mb
SMD d1c
smd transistor d4d
MT49H16M16
MT49H8M32
F1198
38P11
|
BA6A
Abstract: marking code d2c smd
Text: 256Mb: x16, x32 2.5V VEXT, 1.8V VDD, 1.8V VDDQ, RLDRAM REDUCED LATENCY DRAM RLDRAM MT49H8M32 – 1 Meg x 32 x 8 Banks MT49H16M16 – 2 Meg x 16 x 8 Banks Features Figure 1: 144-Ball µFBGA • 256Mb • Organization 8 Meg x 32, 16 Meg x 16 in 8 banks
|
Original
|
PDF
|
256Mb:
256Mb
09005aef81121545/source:
09005aef810c0ffc
256Mbx16x32RLDRAM
BA6A
marking code d2c smd
|
Untitled
Abstract: No abstract text available
Text: 256Mb: x16, x32 2.5V VEXT, 1.8V VDD, 1.8V VDDQ, RLDRAM Features Reduced Latency DRAM RLDRAM MT49H8M32 – 1 Meg x 32 x 8 banks MT49H16M16 – 2 Meg x 16 x 8 banks For the latest data sheet, refer to Micron’s Web site: www.micron.com/products/dram/rldram/
|
Original
|
PDF
|
256Mb:
MT49H8M32
MT49H16M16
09005aef81121545/source:
09005aef810c0ffc
256Mbx16x32RLDRAM
|
WL 431
Abstract: 431 SMD CODE MARKING smd marking AB 6 PIN INFINEON PART MARKING smd transistor d4d RC-5 receiver transistor smd code marking 431 transistor SMD DK SMD CODE N10 smd code marking wl
Text: 256Mb: x16, x32 2.5V VEXT, 1.8V VDD, 1.8V VDDQ, RLDRAM Features REDUCED LATENCY DRAM RLDRAM MT49H8M32 – 1 Meg x 32 x 8 banks MT49H16M16 – 2 Meg x 16 x 8 banks For the latest data sheet, refer to Micron’s Web site: www.micron.com/rldram Features Figure 1:
|
Original
|
PDF
|
256Mb:
MT49H8M32
MT49H16M16
09005aef81121545/source:
09005aef810c0ffc
256Mbx16x32RLDRAM
WL 431
431 SMD CODE MARKING
smd marking AB 6 PIN
INFINEON PART MARKING
smd transistor d4d
RC-5 receiver
transistor smd code marking 431
transistor SMD DK
SMD CODE N10
smd code marking wl
|