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    ACESS CONTROL SYSTEM Search Results

    ACESS CONTROL SYSTEM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SSM6J808R Toshiba Electronic Devices & Storage Corporation MOSFET, P-ch, -40 V, -7 A, 0.035 Ohm@10V, TSOP6F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM6K819R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 10 A, 0.0258 Ohm@10V, TSOP6F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM6K809R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 60 V, 6.0 A, 0.036 Ohm@10V, TSOP6F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM6K504NU Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 30 V, 9.0 A, 0.0195 Ohm@10V, UDFN6B, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K361R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 3.5 A, 0.069 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation

    ACESS CONTROL SYSTEM Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    A4998

    Abstract: IXF1002 gmii phy A4989 a4945 PKC 2135
    Text: Advanced Datasheet SEPTEMBER 1999 Order Number: 278310-001 IXF1002 Dual Port Gigabit Ethernet Controller General Description Introduction The IXP1002 Dual Port Gigabit Ethernet Media Acess Controller MAC , provides two independent 1000 Mb/s intelligent, high-performance Media Access Control


    Original     		IXF1002 IXP1002 1000BASE-X A4998 gmii phy A4989 a4945 PKC 2135 PDF

    MSP430

    Abstract: 00CFh 01FFH 0212H
    Text: MSP430 Family 4 Memory Organization Memory Organization Topic Page 4.1 Data in the Memory 4.2 Internal ROM Organization 4-5 4-6 4.3 RAM and Peripheral Organization 4-7 4-1 4 Memory Organization 4 4-2 MSP430 Family MSP430 Family Memory Organization The MSP430 family's memory space is configured in a "von-Neumann Architecture" and


    Original     		MSP430 00CFh 01FFH 0212H PDF

    ADI1981

    Abstract: BCM2035 20XCD Broadcom shell
    Text: Thi s Docum entcan notbe used wi thoutSamsung' s aut hori zati on. 2.I ntroducti on and Speci fi cati on 2-1.I ntroducti on 1 14" W i de Note PC ForOpti m um Entertai nm ent) - Qui ck Boot I ncl ude "AVSNow" and Rem ote Control l er - Hi gh bri ghtness LCD gl


    Original     		44064MB 333MHz 40/60GB) iEEE1394, ADI1981 BCM2035 20XCD Broadcom shell PDF

    WC1G

    Abstract: ct Potentiometer ground relay CURRENT TRANSFORMER Acess control SYSTEM
    Text: Ground Fault Relays Function: WILMAR Protective Relays – WC1G Series - Grounded TERMINAL STRIPS #6 - 32 SCREWS 3.8 3.0 WILMAR Ground Fault Detectors are designed to provide very sensitive Ground-Current protection for motor, equipment and personnel from damage or electrical


    Original     		120AC 220AC 230AC 380AC 400AC 460AC 480AC 575AC WC1G-120AC WC1G ct Potentiometer ground relay CURRENT TRANSFORMER Acess control SYSTEM PDF

    2.4 ghz video TRANSMITTER CIRCUIT DIAGRAM

    Abstract: rf based intruder alarm HCS08QE 4 bit RF based remote control circuit diagram window curtain automation MC1323X wireless SURROUND sound system circuit diagram of wireless door 20 pin diagram of zigbee Zigbee-pro
    Text: Fact Sheet MC1323x 2.4 GHz IEEE 802.15.4/ZigBee® System-on-Chip Solution The CPU complex is based on the successful HCS08QE microcontroller. The CPU offers a 16-bit stack pointer, 16-bit index register and 8-bit accumulator. A range of functionality is


    Original     		MC1323x HCS08QE 16-bit 48-LGA MC13233C 48-LGA 260/tray 2.4 ghz video TRANSMITTER CIRCUIT DIAGRAM rf based intruder alarm 4 bit RF based remote control circuit diagram window curtain automation wireless SURROUND sound system circuit diagram of wireless door 20 pin diagram of zigbee Zigbee-pro PDF

    Untitled

    Abstract: No abstract text available
    Text: Fact Sheet MC1323x 2.4 GHz IEEE 802.15.4/ZigBee® System-onChip Solution Applications Overview Consumer Our fourth-generation 2.4 GHz IEEE 802.15.4/ ZigBee® ready solution has been designed to serve the requirements of the consumer electronics market, yet offers a feature set and


    Original     		MC1323x MC13234 MC13237, MC1323x, MC13237CHT MC13237CHTR2 12-bit 48-LGA, 260/tray PDF

    H3084

    Abstract: RMII PHY MTD505 h1838
    Text: MYSON TECHNOLOGY MTD505 Preliminary 5 Port 10M/100M Ethernet Switch FEATURES GENERAL DESCRIPTION • • • • The MTD505 complies fully with the IEEE802.3, 802.3u and 802.3x specifications and is a non-blocking 5 port 10M/100M Ethernet switch device.


    Original     		MTD505 10M/100M MTD505 IEEE802 MTD505, H3084 RMII PHY h1838 PDF

    TXD70

    Abstract: RMII PHY MTD508
    Text: MYSON TECHNOLOGY MTD508 Preliminary 8 Port 10M/100M Ethernet Switch FEATURES GENERAL DESCRIPTION • IEEE802.3 and IEEE802.3u compliant. • Provide 8 RMII (Reduced Media Independent Interface) ports. • Programmable 1K/8K MAC addresses filtering. • Store and forward switching function and bad


    Original     		MTD508 10M/100M IEEE802 pressure/802 75MHz MTD508 TXD70 RMII PHY PDF

    BGB100

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BGB100 0 dBm TrueBlue radio module Preliminary specification 2001 Oct 25 Philips Semiconductors Preliminary specification 0 dBm TrueBlue radio module BGB100 FEATURES APPLICATIONS • Plug-and-play Bluetooth class 2 radio module, needs


    Original     		BGB100 SCA73 budgetnum/ed/pp16 PDF

    DECT RF Transceiver 1.9 ghz

    Abstract: RF MODULE CIRCUIT DIAGRAM dect BGB100 GSM-900 SOT649 BGB1000
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BGB100 0 dBm TrueBlue radio module Preliminary specification 2002 Jan 03 Philips Semiconductors Preliminary specification 0 dBm TrueBlue radio module BGB100 FEATURES APPLICATIONS • Plug-and-play Bluetooth class 2 radio module, needs


    Original     		BGB100 SCA73 budgetnum/ed/pp16 DECT RF Transceiver 1.9 ghz RF MODULE CIRCUIT DIAGRAM dect BGB100 GSM-900 SOT649 BGB1000 PDF

    En1522

    Abstract: RMII12 "filtering database" RMII PHY uplink DMA13 MTD516 REG14 RXD11 RMII Specification revision 1.2
    Text: MYSON TECHNOLOGY MTD516 Preliminary 16 Port 10M/100M Ethernet Switch FEATURES GENERAL DESCRIPTION • IEEE802.3 and IEEE802.3u compliant. • Provide 16 RMII (Reduced Media Independent Interface) ports. • Programmable 1K/8K MAC addresses filtering database.


    Original     		MTD516 10M/100M IEEE802 pressure/802 83MHz MTD516 En1522 RMII12 "filtering database" RMII PHY uplink DMA13 REG14 RXD11 RMII Specification revision 1.2 PDF

    ANT 7910 regulator

    Abstract: BGB100 GSM-900 CNR50
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BGB100 Bluetooth radio module Preliminary specification 2001 Mar 29 Philips Semiconductors Preliminary specification Bluetooth radio module BGB100 FEATURES APPLICATIONS • Plug-and-play Bluetooth class 2 radio module, needs


    Original     		BGB100 budgetnum/ed/pp16 ANT 7910 regulator BGB100 GSM-900 CNR50 PDF

    HP COMPAQ MOTHERBOARD CIRCUIT diagram

    Abstract: mitsumi d353g floppy drive hitachi dk23ea-30 logitech 99 mouse controller PC MOTHERBOARD CIRCUIT diagram for Acer mitsumi D353G T30V1 IC25N030ATMR04-0 JU-226A033FC MK6021GAS
    Text: Acer TravelMate 240/250 Series Service Guide SERVICE CD PART NO.: VD.T30V1.001 PRINTED IN TAIWAN Chapter 1 System Introduction Features This computer was designed with the user in mind. Here are just a few of its many features: Performance T Intel Mobile Pentium® 4 series processors with 512 KB L2 cache or Intel® Mobile Celeron®


    Original     		T30V1 64-bit 16-bit 11a/b) 340MB 128MB CB1394/DVC HP COMPAQ MOTHERBOARD CIRCUIT diagram mitsumi d353g floppy drive hitachi dk23ea-30 logitech 99 mouse controller PC MOTHERBOARD CIRCUIT diagram for Acer mitsumi D353G IC25N030ATMR04-0 JU-226A033FC MK6021GAS PDF

    Memory

    Abstract: No abstract text available
    Text: 512Kx8/256Kx16/128Kx32, 15 - 35ns, 30A167-00 A Surface Mount FTE32KX32XP/XHP 1 Megabit CMOS EEPROM DESCRIPTION: The FTE32KX32XP/XHP is a high-performance Electrically Erasable and Programmable Read Only Memory EEPROM module and may be organised as 32K X 32, 64K X 16 or 128K


    Original     		512Kx8/256Kx16/128Kx32, 30A167-00 FTE32KX32XP/XHP FTE32KX32XP/XHP 16-bit 32-bit 64-BWDW Memory PDF

    Untitled

    Abstract: No abstract text available
    Text: TC51W3216XB-80,-85 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2,097,152-WORD BY 16-BIT CMOS PSEUDO STATIC RAM DESCRIPTION The TC51W3216XB is a 33,554,432-bit pseudo static random access memory PSRAM organized as 2,097,152 words by 16 bits. Using Toshiba’s CMOS technology and advanced circuit techniques, it provides high density, high


    Original     		TC51W3216XB-80 152-WORD 16-BIT TC51W3216XB 432-bit PDF

    Untitled

    Abstract: No abstract text available
    Text: TC51W6416XB-80,-85 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4,194,304-WORD BY 16-BIT CMOS PSEUDO STATIC RAM DESCRIPTION The TC51W6416XB is a 67,108,864-bit pseudo static random access memory PSRAM organized as 4,194,304 words by 16 bits. Using Toshiba’s CMOS technology and advanced circuit techniques, it provides high density, high


    Original     		TC51W6416XB-80 304-WORD 16-BIT TC51W6416XB 864-bit PDF

    mbus acquisition

    Abstract: mbus controllers 106 25K
    Text: KS0155 ELECTR O NICS DSP The KS0155 is specifically designed for use in digital video decoding systems based on the MPEG2 algorithm. It receives transport packet data at a vaiable rate up to 29.27Mbps. Data is decompressed and clear video is passed on to the video reconstruction chip at 27MHz. The KS0155


    OCR Scan     		KS0155 KS0155 27Mbps. 27MHz. CCIR-656 27MHz 100-TQFP-1414-AN mbus acquisition mbus controllers 106 25K PDF

    3DSD3G48VQ6486

    Abstract: No abstract text available
    Text: MEMORY MODULE SDRam 64Mx48-QFP Synchronous Dynamic Ram MODULE 3DSD3G48VQ6486 3Gbit SDRam organized as 64Mx48, based on 32Mx16 Pin Assignment Top View QFP 114-(Pitch : 0.635mm) - Organized as 64Mx48-bit. - Single +3.3V power supply. 27 28 29 30 31 32 33 34


    OCR Scan     		64Mx48-QFP 3DSD3G48VQ6486 64Mx48, 32Mx16 635mm) 64Mx48-bit. 133MHz/CL3 3DFP-0486-REV 3DSD3G48VQ6486 PDF

    Untitled

    Abstract: No abstract text available
    Text: moi _ C Electronic DMlgn» Ine. EDI411024C High Performance Megabit Monolithic DRAM 1Mx1 Dynamic RAM CMOS, Monolithic Features The EDI411024C is a high performance, low power CMOS Dynamic RAM organized as 1Megabit x1. The use of triple-layer polysilicon process, combined with


    OCR Scan     		EDI411024C EDI411024C PDF

    XS 3860 b

    Abstract: No abstract text available
    Text: Advance Information X28TC256 256K 32K x 8 Bit Turbo Access E2PROM FEATURES DESCRIPTION * 25ns Access Time —Within 64-Byte Page Boundaries —Page Crossing Status Output—WAIT * 5 Volt Byte and Page Alterable —Write From One to Sixty-Four Bytes —Write Time— 5ms Max.


    OCR Scan     		X28TC256 64-Byte X28TC256 XS 3860 b PDF

    EDI411024C

    Abstract: No abstract text available
    Text: ^ E D _ I Electronic Detlgns Inc. EDI411024C High Performance Megabit Monolithic DRAM 1Mx1 Dynamic RAM CMOS, Monolithic Features The EDI411024C is a high performance, low power CMOS Dynamic RAM organized as 1Megabit x1. The use of triple-layer polysilicon process, combined with


    OCR Scan     		EDI411024C EDI411024C PDF

    a719

    Abstract: EDI411024C 150ni 15trc 1MX1
    Text: E LECTRONIC DESIGNS INC m {• c h o n te o 30E D i • 3B30114 0 0 0 0 7 7 ? ö M EDI411024C High Performance Megabit Monolithic DRAM In e . < 1Mx1 Dynamic RAM CMOS, Monolithic y in m Features m T - y 6 -2 3 -1 5 The EDI4110240 is a high performance, low power


    OCR Scan     		EDI411024C EDI4110240 T-46-23-15 EDI411024Ã Noie27 EDI411024C a719 150ni 15trc 1MX1 PDF

    Untitled

    Abstract: No abstract text available
    Text: ^EDI _EDI411024C Electronic Detlgns Inc. High Performance Megabit Monolithic DRAM 1Mx1 Dynamic RAM CMOS, Monolithic Features The EDI411024C is a high performance, low power CMOS Dynamic RAM organized as 1Megabit x1. The use of triple-layer polysilicon process, combined with


    OCR Scan     		EDI411024C EDI411024C PDF

    EDI411024C

    Abstract: No abstract text available
    Text: m o _ EDI411024C i Electronic D*4gn» Ine. High Performance Megabit Monolithic DRAM 1Mx1 Dynamic RAM CMOS, Monolithic railLDHflDNAmf Features The ED 1411024C is a high performance, low power CMOS Dynamic RAM organized as 1 Megabit x1. The use of triple-layer polysilicon process, combined with


    OCR Scan     		EDI411024C 1411024C EDI411024C PDF