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Belden Inc 2221-G7XU1000 1 PR #26 FHDPE BRD PVC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2221-G7XU1000					1 - 10 - 100 - 1000 - 10000 -	Buy Now
Belden Inc 9907-E4XU1000 RG-58 TYPE COAX
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	9907-E4XU1000				1,000	1 - 10 - 100 - 1000 $1.91438 10000 $1.91438	Buy Now
Belden Inc 1800F-G7XU1000 #24 PR FHDPE BRD PVC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	1800F-G7XU1000				1,000	1 - 10 - 100 - 1000 $2.34795 10000 $2.34795	Buy Now
Belden Inc 1800B-T5XU1000 #24 FHDPE FS PR PVC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	1800B-T5XU1000				1,000	1 - 10 - 100 - 1000 $1.02183 10000 $1.02183	Buy Now
Delkin Devices S408APGFX-U1000-3 MICROSD, UTILITY, SD 3.0, SDHC, 8GB, MLC, -25 TO 85 C OPERATING TEMP, SMART - Trays (Alt: S408APGFX-U1000-3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	S408APGFX-U1000-3	Tray		20 Weeks	15	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Newark	S408APGFX-U1000-3	Bulk			20	1 - 10 - 100 $10.38 1000 $10.38 10000 $10.38	Buy Now

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XU1000 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
XU1000		Mimix Broadband	17.0-27.0 GHz GaAs MMIC Transmitter		Original	PDF
XU1000		Mimix Broadband	17.0-27.0 GHz GaAs MMIC Up-Converter		Original	PDF

XU1000 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
P1000 diode Abstract: diode p1000 84-1LMI P1000 XB1004 XP1000 XU1000 Text: 17.0-24.0 GHz GaAs MMIC Power Amplifier P1000 May 2005 - Rev 05-May-05 Features Chip Device Layout High Linearity Output Amplifier Balanced Design Provides Good Input/Output Match On-Chip Temperature Compensated Output Power Detector 19.0 dB Small Signal Gain	Original	PDF	P1000 05-May-05 MIL-STD-883 P1000 diode diode p1000 84-1LMI P1000 XB1004 XP1000 XU1000
U1000 Abstract: XB1004 XU1000 Text: 17.0-27.0 GHz GaAs MMIC Transmitter U1000 May 2005 - Rev 13-May-05 Features Chip Device Layout Fundamental Transmitter Low DC Power Consumption Optional Power Bias Configuration 0.0 dB Conversion Gain +12.0 dBm Third Order Intercept IIP3 100% On-Wafer RF and DC Testing	Original	PDF	U1000 13-May-05 MIL-STD-883 U1000 XB1004 XU1000
B1000 Abstract: Mimix xb1000 Text: 17.0-27.0 GHz GaAs MMIC Buffer Amplifier B1000 May 2003 - Rev 10-May-03 Features Chip Device Layout Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 21.0 dB Small Signal Gain 2.8 dB Noise Figure +13 dBm P1dB Compression Point 100% On-Wafer RF, DC and Noise Figure Testing	Original	PDF	10-May-03 B1000 MIL-STD-883 Mimix xb1000
74613 Abstract: B1004-BD TS3332LD XB1004-BD 96330 Text: 16.0-30.0 GHz GaAs MMIC Buffer Amplifier B1004-BD June 2007 - Rev 12-Jun-07 Features High Dynamic Range Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 21.0 dB Small Signal Gain 2.2 dB Noise Figure at Low Noise Bias +19.0 dBm P1dB Compression Point at Power Bias	Original	PDF	B1004-BD 12-Jun-07 MIL-STD-883 XB1004-BD-000V XB1004-BD-000W XB1004-BD-EV1 XB1004 74613 B1004-BD TS3332LD XB1004-BD 96330
B1004-BD Abstract: TS3332LD XB1004-BD Text: 16.0-30.0 GHz GaAs MMIC Buffer Amplifier B1004-BD June 2007 - Rev 12-Jun-07 Features High Dynamic Range Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 21.0 dB Small Signal Gain 2.2 dB Noise Figure at Low Noise Bias +19.0 dBm P1dB Compression Point at Power Bias	Original	PDF	B1004-BD 12-Jun-07 MIL-STD-883 XB1004-BD-000V XB1004-BD-000W XB1004-BD-EV1 XB1004 B1004-BD TS3332LD XB1004-BD
B1000 Abstract: Mimix xb1000 XU1000 pHEMT transistor MTBF Text: 17.0-27.0 GHz GaAs MMIC Buffer Amplifier B1000 May 2002 - Rev 01-May-02 Features Chip Device Layout Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 21.0 dB Small Signal Gain 2.8 dB Noise Figure +13 dBm P1dB Compression Point 100% On-Wafer RF, DC and Noise Figure Testing	Original	PDF	B1000 01-May-02 MIL-STD-883 B1000 Mimix xb1000 XU1000 pHEMT transistor MTBF
B1001 Abstract: XB1001 XP1000 XU1000 Text: 17.0-27.0 GHz GaAs MMIC Buffer Amplifier B1001 May 2003 - Rev 10-May-03 Features Chip Device Layout Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 20.0 dB Small Signal Gain 3.0 dB Noise Figure +13 dBm P1dB Compression Point 100% On-Wafer RF, DC and Noise Figure Testing	Original	PDF	B1001 10-May-03 MIL-STD-883 B1001 XB1001 XP1000 XU1000
XB1001 Abstract: 84-1LMI B1001 XP1000 XU1000 GERMANIUM SMALL SIGNAL TRANSISTORS Text: 17.0-27.0 GHz GaAs MMIC Buffer Amplifier B1001 May 2002 - Rev 01-May-02 Features Chip Device Layout Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 20.0 dB Small Signal Gain 3.0 dB Noise Figure +13 dBm P1dB Compression Point 100% On-Wafer RF, DC and Noise Figure Testing	Original	PDF	B1001 01-May-02 MIL-STD-883 XB1001 84-1LMI B1001 XP1000 XU1000 GERMANIUM SMALL SIGNAL TRANSISTORS
Untitled Abstract: No abstract text available Text: 16.0-30.0 GHz GaAs MMIC Buffer Amplifier B1004 April 2005 - Rev 01-Apr-05 Features Chip Device Layout High Dynamic Range Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 21.0 dB Small Signal Gain 2.2 dB Noise Figure at Low Noise Bias	Original	PDF	B1004 01-Apr-05 MIL-STD-883
52521 Abstract: 74613 78304 B1004 XB1001 XB1004 XP1000 XU1000 Text: 16.0-30.0 GHz GaAs MMIC Buffer Amplifier B1004 March 2005 - Rev 15-Mar-05 Features Chip Device Layout High Dynamic Range Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 21.0 dB Small Signal Gain 2.2 dB Noise Figure at Low Noise Bias	Original	PDF	B1004 15-Mar-05 XB1001 MIL-STD-883 52521 74613 78304 B1004 XB1004 XP1000 XU1000
P1000 diode Abstract: No abstract text available Text: 17.0-24.0 GHz GaAs MMIC Power Amplifier P1000-BD May 2007 - Rev 02-May-07 Features High Linearity Output Amplifier Balanced Design Provides Good Input/Output Match On-Chip Temperature Compensated Output Power Detector 19.0 dB Small Signal Gain +36.0 dBm Third Order Intercept OIP3	Original	PDF	02-May-07 P1000-BD MIL-STD-883 P1000 XP1000-BD-000V XP1000-BD-000W XP1000-BD-EV1 XP1000 P1000 diode
diode p1000 Abstract: P1000 diode OC 140 germanium transistor sl353 P1000 84-1LMI XP1000 XU1000 pHEMT transistor MTBF gold detector circuit diagram Text: 17.0-24.0 GHz GaAs MMIC Power Amplifier P1000 May 2002 - Rev 01-May-02 Features Chip Device Layout Excellent for Modulations up to 64 QAM High Linearity Output Amplifier Balanced Design Provides Good Input/Output Match On-Chip Temperature Compensated Output Power Detector	Original	PDF	P1000 01-May-02 MIL-STD-883 diode p1000 P1000 diode OC 140 germanium transistor sl353 P1000 84-1LMI XP1000 XU1000 pHEMT transistor MTBF gold detector circuit diagram
XB1004-BD Abstract: No abstract text available Text: 17.0-27.0 GHz GaAs MMIC Transmitter U1000-BD May 2007 - Rev 02-May-07 Features Chip Device Layout Fundamental Transmitter Low DC Power Consumption Optional Power Bias Configuration 0.0 dB Conversion Gain +12.0 dBm Third Order Intercept IIP3 100% On-Wafer RF and DC Testing	Original	PDF	U1000-BD 02-May-07 MIL-STD-883 XU1000-BD-000V XU1000-BD-000W XU1000-BD-EV1 XU1000 XB1004-BD
B1004 Abstract: 982E-01 842427 on 5295 transistor 49135-1 52521 78304 transistor b1004 XB1004 XP1000 Text: 16.0-30.0 GHz GaAs MMIC Buffer Amplifier B1004 April 2005 - Rev 01-Apr-05 Features Chip Device Layout High Dynamic Range Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 21.0 dB Small Signal Gain 2.2 dB Noise Figure at Low Noise Bias	Original	PDF	B1004 01-Apr-05 MIL-STD-883 B1004 982E-01 842427 on 5295 transistor 49135-1 52521 78304 transistor b1004 XB1004 XP1000