Gate Turn-off Thyristor
Abstract: SG1000R23 westcode cross reference SG1000EX23 SG600EX21 SG700ex22 SG800EX21 equivalent FG2000DV90 fg2000dv-90da DG406BP18
Text: Gate Turn-off Thyristor Cross Reference Gate Turn-off Thyristor Cross Reference DS5549-2.0 September 2003 ABB - DYNEX ITQRM µF Cs µ ABB Part Number Voltage Maximum CSG 1501-25A01 2500 1500 3 Dynex Nearest Equivalent Part Number DG406BP25 CSG 2001-25A01
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DS5549-2
1501-25A01
DG406BP25
2001-25A01
DG646BH25
2003-45A01
DG648BH45
2501-25A01
3001-25A01
Gate Turn-off Thyristor
SG1000R23
westcode cross reference
SG1000EX23
SG600EX21
SG700ex22
SG800EX21 equivalent
FG2000DV90
fg2000dv-90da
DG406BP18
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SG600EX21
Abstract: SG600R21 FG2000DV-90 FG2000DV90 westcode cross reference SG1000R23 SG1000EX23 FG1000AH SG700EX22 DG406BP18
Text: Gate Turn-off Thyristor Cross Reference DS5549 Gate Turn-off Thyristor Cross Reference DS5549-1.1 May 2002 ABB - DYNEX ITQRM µF Cs µ ABB Part Number Voltage Maximum CSG 1501-25A01 2500 1500 3 Dynex Nearest Equivalent Part Number DG406BP25 CSG 2001-25A01
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DS5549
DS5549-1
1501-25A01
DG406BP25
2001-25A01
DG646BH25
2003-45A01
DG648BH45
2501-25A01
SG600EX21
SG600R21
FG2000DV-90
FG2000DV90
westcode cross reference
SG1000R23
SG1000EX23
FG1000AH
SG700EX22
DG406BP18
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GTO thyristor Curve properties
Abstract: ABB 5SGY 35L4502 ABB 5SGy GTO thyristor ABB snubber IGCT ABB GTO gate unit gto dc converter abb GTO thyristor driver igct abb diode DS1
Text: ABB Semiconductors AG Section 3 SECTION 3 DATA SHEET USER’S GUIDE BY ANTON SCHWEIZER S 3-1 ABB Semiconductors AG Section 3 DATA SHEET USER’S GUIDE 3.1 GTOs Introduction This section is a detailed guide to proper understanding of a GTO data sheet. Parameters and ratings will be defined, and illustrated by
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30J4502
35L4502
GTO thyristor Curve properties
ABB 5SGY 35L4502
ABB 5SGy
GTO thyristor ABB
snubber IGCT
ABB GTO gate unit
gto dc converter abb
GTO thyristor driver
igct abb
diode DS1
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GTO thyristor ABB
Abstract: ABB 5SGA ABB GTO ABB thyristor 5
Text: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 2500 1500 10 1.55 0.63 1400 V A kA V Gate turn-off Thyristor 5SGA 15F2502 mΩ V Doc. No. 5SYA 1214-01 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode
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15F2502
CH-5600
GTO thyristor ABB
ABB 5SGA
ABB GTO
ABB thyristor 5
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ABB thyristor 5
Abstract: 5SGA20H4502
Text: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 4500 2000 13 1.80 0.85 2200 V A kA V Gate turn-off Thyristor 5SGA 20H4502 mΩ V Doc. No. 5SYA 1210-01 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode
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20H4502
CH-5600
ABB thyristor 5
5SGA20H4502
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Untitled
Abstract: No abstract text available
Text: Key Parameters VDRM = 2500 ITGQM = 1500 ITSM = 10 VT0 = 1.55 rT = 0.63 VDClink = 1400 V A kA V Gate turn-off Thyristor 5SGA 15F2502 mΩ V Doc. No. 5SYA 1214-01 April 98 Features • Patented free-floating silicon technology • Low on-state and switching losses
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15F2502
CH-5600
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Untitled
Abstract: No abstract text available
Text: Key Parameters VDRM = 4500 ITGQM = 4000 ITSM = 25 VT0 = 2.10 rT = 0.58 VDClink = 2800 V A kA V Gate turn-off Thyristor 5SGA 40L4501 mΩ V Doc. No. 5SYA 1208-02 April 98 Features • Patented free-floating silicon technology • Low on-state and switching losses
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40L4501
CH-5600
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Untitled
Abstract: No abstract text available
Text: Key Parameters VDRM = 4500 ITGQM = 3000 ITSM = 25 VT0 = 1.90 rT = 0.53 VDClink = 2200 V A kA V Gate turn-off Thyristor 5SGA 30J4505 mΩ V Doc. No. 5SYA 1204-04 April 98 Features • Patented free-floating silicon technology • Low on-state and switching losses
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30J4505
CH-5600
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5sga20h4502
Abstract: No abstract text available
Text: Key Parameters VDRM = 4500 ITGQM = 2000 ITSM = 13 VT0 = 1.80 rT = 0.85 VDClink = 2200 V A kA V Gate turn-off Thyristor 5SGA 20H4502 mΩ V Doc. No. 5SYA 1210-01 April 98 Features • Patented free-floating silicon technology • Low on-state and switching losses
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20H4502
CH-5600
5sga20h4502
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GTO Snubber Capacitor
Abstract: No abstract text available
Text: Key Parameters VDRM = 2500 ITGQM = 2000 ITSM = 16 VT0 = 1.66 rT = 0.57 VDClink = 1400 V A kA V Gate turn-off Thyristor 5SGA 20H2501 mΩ V Doc. No. 5SYA 1205-01 April 98 Features • Patented free-floating silicon technology • Low on-state and switching losses
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20H2501
CH-5600
GTO Snubber Capacitor
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30J250
Abstract: 5SGA30J2501 THYRISTOR GTO
Text: Key Parameters VDRM = 2500 ITGQM = 3000 ITSM = 3000 VT0 = 1.50 rT = 0.33 VDClink = 1400 V A kA V Gate turn-off Thyristor 5SGA 30J2501 mΩ V Doc. No. 5SYA 1213-02 April 98 Features • Patented free-floating technology • Low on-state and switching losses
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30J2501
CH-5600
30J250
5SGA30J2501
THYRISTOR GTO
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25H2501
Abstract: No abstract text available
Text: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 2500 2500 16 1.66 0.57 1400 V A kA V Gate turn-off Thyristor 5SGA 25H2501 mΩ V Doc. No. 5SYA1206-01 Dec. 04 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode
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25H2501
5SYA1206-01
CH-5600
25H2501
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20H2501
Abstract: 5sga20h2501
Text: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 2500 2000 16 1.66 0.57 1400 V A kA V mW V Gate turn-off Thyristor 5SGA 20H2501 Doc. No. 5SYA1205-01 Jun. 04 • Patented free-floating silicon technology · Low on-state and switching losses · Annular gate electrode
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20H2501
5SYA1205-01
CH-5600
20H2501
5sga20h2501
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ABB 5SGA
Abstract: ABB thyristor 5 GTO thyristor ABB
Text: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 4500 3000 25 1.90 0.53 2200 V A kA V Gate turn-off Thyristor 5SGA 30J4505 mΩ V Doc. No. 5SYA 1204-04 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode
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30J4505
CH-5600
ABB 5SGA
ABB thyristor 5
GTO thyristor ABB
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gto 5sga
Abstract: GTO thyristor ABB ABB thyristor ABB thyristor 5 gto Gate Drive circuit ABB 5SGA ABB 5SGA 20H2501
Text: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 2500 2000 16 1.66 0.57 1400 V A kA V Gate turn-off Thyristor 5SGA 20H2501 mΩ V Doc. No. 5SYA 1205-01 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode
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20H2501
CH-5600
gto 5sga
GTO thyristor ABB
ABB thyristor
ABB thyristor 5
gto Gate Drive circuit
ABB 5SGA
ABB 5SGA 20H2501
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5SGA40L4501
Abstract: ABB 5SGA 40L4501 ABB thyristor 5 GTO thyristor ABB
Text: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 4500 4000 25 2.10 0.58 2800 V A kA V Gate turn-off Thyristor 5SGA 40L4501 mΩ V Doc. No. 5SYA 1208-02 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode
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40L4501
CH-5600
5SGA40L4501
ABB 5SGA
40L4501
ABB thyristor 5
GTO thyristor ABB
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1206-01
Abstract: 25H25 25H2501 ABB 5SGA ABB thyristor 5 GTO ABB GTO thyristor ABB
Text: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 2500 2500 16 1.66 0.57 1400 V A kA V Gate turn-off Thyristor 5SGA 25H2501 mΩ V Doc. No. 5SYA 1206-01 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode
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25H2501
CH-5600
1206-01
25H25
25H2501
ABB 5SGA
ABB thyristor 5
GTO ABB
GTO thyristor ABB
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ABB thyristor 5
Abstract: cosmic GTO thyristor ABB 30J250
Text: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 2500 3000 30 1.50 0.33 1400 V A kA V Gate turn-off Thyristor 5SGA 30J2501 mΩ V Doc. No. 5SYA 1213-02 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode
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30J2501
CH-5600
ABB thyristor 5
cosmic
GTO thyristor ABB
30J250
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Untitled
Abstract: No abstract text available
Text: Key Parameters VDRM = 2500 ITGQM = 2500 ITSM = 16 VT0 = 1.66 rT = 0.57 VDClink = 1400 V A kA V Gate turn-off Thyristor 5SGA 25H2501 mΩ V Doc. No. 5SYA 1206-01 April 98 Features • Patented free-floating silicon technology • Low on-state and switching losses
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25H2501
CH-5600
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Untitled
Abstract: No abstract text available
Text: Key Parameters VDRM = 4500 ITGQM = 3000 ITSM = 24 VT0 = 2.20 rT = 0.60 VDClink = 2800 V A kA V Gate turn-off Thyristor 5SGA 30J4502 mΩ V Doc. No. 5SYA 1202-03 April 98 Features • Patented free-floating silicon technology • Low on-state and switching losses
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30J4502
CH-5600
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GTO ABB 5SGA 2046
Abstract: IG 2200 19
Text: VDRM ITGQM ITSM VT0 rT VDclink = = = = = = 4500 3000 25x103 1.9 0.53 2200 V A A V mΩ V Asymmetric Gate turn-off Thyristor 5SGA 30J4505 Doc. No. 5SYA1204-04 Sept. 05 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode
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30J4505
5SYA1204-04
CH-5600
GTO ABB 5SGA 2046
IG 2200 19
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press pack thyristor 10000 VDRM
Abstract: LS 7313 S 5SGA40L4501 LS 7313 - S
Text: VDRM ITGQM ITSM VT0 rT VDclink = = = = = = 4500 4000 25x103 2.1 0.58 2800 V A A V mΩ V Asymmetric Gate turn-off Thyristor 5SGA 40L4501 Doc. No. 5SYA1208-02 March 05 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode
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40L4501
5SYA1208-02
CH-5600
press pack thyristor 10000 VDRM
LS 7313 S
5SGA40L4501
LS 7313 - S
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05D2500
Abstract: GTO ABB GTO gate drive unit ABB GTO gate unit ABB GTO 30L2501 25H2501 05D250 5SDF GTO 6.5 KV
Text: Asymmetrie GTO Thyristors ABB Semiconductors AG I - P atentierter freier Druckkontakt. - Alle G TO s werden unter A usschalt G renzw erten getestet. - Ausgezeichnete O ptim ierung zw ischen Durchlass- und Schaltverlusten. - G arantierte R ückw ärts-AvalancheBelastbarkeit.
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OCR Scan
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15F2502
5D25DQ
01R2501
01R2501
20H2501
05D2500
11F2500
01R25D1
25H25C1
GTO ABB
GTO gate drive unit
ABB GTO gate unit
ABB GTO
30L2501
25H2501
05D250
5SDF
GTO 6.5 KV
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ABB 5SGA
Abstract: 2sh25 GTO ABB GTO gate drive unit 2SH2501 TJM 10 5sga 20h2501 ABB GTO R2501 5SGA 15F2502
Text: Asymmetrie GTO Thyristors ABB Semiconductors AG I Patented free-floating silicon technology. — All G TOs are turn-off tested under maxim um ratings. — Excellent trade-off between on-state and switching losses. T yp e and ordering num ber V DRM V DC V RRM •tGQM at C s
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OCR Scan
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15F2502
15F2502
05D2501
01R2501
20H2501
05D2501
11F2501
25H2501
ABB 5SGA
2sh25
GTO ABB
GTO gate drive unit
2SH2501
TJM 10
5sga 20h2501
ABB GTO
R2501
5SGA 15F2502
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