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    40L4501 Price and Stock

    ABB Low Voltage Products and Systems 5SGA 40L4501

    Thyristor: hockey-puck; 4.5kV; Ifmax: 1.57kA; 1kA; Igt: 4A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME 5SGA 40L4501 1
    • 1 $3057.03
    • 10 $2578.35
    • 100 $2578.35
    • 1000 $2578.35
    • 10000 $2578.35
    		Get Quote

    Hitachi Energy 5SGA40L4501

    GTO THYRISTOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Richardson RFPD 5SGA40L4501 1
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    40L4501 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    5SGA40L4501

    Abstract: ABB 5SGA 40L4501 ABB thyristor 5 GTO thyristor ABB
    Text: VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 4500 4000 25 2.10 0.58 2800 V A kA V Gate turn-off Thyristor 5SGA 40L4501 mΩ V Doc. No. 5SYA 1208-02 Aug. 2000 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode


    Original     		PDF 40L4501 CH-5600 5SGA40L4501 ABB 5SGA 40L4501 ABB thyristor 5 GTO thyristor ABB

    Untitled

    Abstract: No abstract text available
    Text: Key Parameters VDRM = 4500 ITGQM = 4000 ITSM = 25 VT0 = 2.10 rT = 0.58 VDClink = 2800 V A kA V Gate turn-off Thyristor 5SGA 40L4501 mΩ V Doc. No. 5SYA 1208-02 April 98 Features • Patented free-floating silicon technology • Low on-state and switching losses


    Original     		PDF 40L4501 CH-5600

    press pack thyristor 10000 VDRM

    Abstract: LS 7313 S 5SGA40L4501 LS 7313 - S
    Text: VDRM ITGQM ITSM VT0 rT VDclink = = = = = = 4500 4000 25x103 2.1 0.58 2800 V A A V mΩ V Asymmetric Gate turn-off Thyristor 5SGA 40L4501 Doc. No. 5SYA1208-02 March 05 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode


    Original     		PDF 40L4501 5SYA1208-02 CH-5600 press pack thyristor 10000 VDRM LS 7313 S 5SGA40L4501 LS 7313 - S

    Untitled

    Abstract: No abstract text available
    Text: VDRM ITGQM ITSM VT0 rT VDclink = = = = = = 4500 4000 25x103 2.1 0.58 2800 V A A V mΩ Ω V Asymmetric Gate turn-off Thyristor 5SGA 40L4501 Doc. No. 5SYA1208-02 Apr. 03 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode


    Original     		PDF 40L4501 5SYA1208-02 CH-5600

    5SDF01R2501

    Abstract: 5SGA 5SGA30J2501 RTK 031
    Text: A S Y M M E T R I C _ G T Q T H Y R I S T O R S - ± X 0 GTO - Patentierter freier Druckkontakt. - Alle GTOs werden unter Ausschalt­ grenzwerten getestet. - Ausgezeichnete O ptimierung zwiscl Durchlass- und Schaltverlusten. - Spezifizierte Höhenstrahlungsfes­


    OCR Scan     		PDF 01R2501 05D2501 05D2501 15F2502 20H2501 25H2501 30J2501 20H4502 11F2501 03D4501 5SDF01R2501 5SGA 5SGA30J2501 RTK 031

    ABB 5SGA

    Abstract: 2sh25 GTO ABB GTO gate drive unit 2SH2501 TJM 10 5sga 20h2501 ABB GTO R2501 5SGA 15F2502
    Text: Asymmetrie GTO Thyristors ABB Semiconductors AG I Patented free-floating silicon technology. — All G TOs are turn-off tested under maxim um ratings. — Excellent trade-off between on-state and switching losses. T yp e and ordering num ber V DRM V DC V RRM •tGQM at C s


    OCR Scan     		PDF 15F2502 15F2502 05D2501 01R2501 20H2501 05D2501 11F2501 25H2501 ABB 5SGA 2sh25 GTO ABB GTO gate drive unit 2SH2501 TJM 10 5sga 20h2501 ABB GTO R2501 5SGA 15F2502