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    AAAA MARKING Search Results

    AAAA MARKING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    5962-8950303GC Rochester Electronics LLC ICM7555M - Dual Marked (ICM7555MTV/883) Visit Rochester Electronics LLC Buy
    54HC221AJ/883C Rochester Electronics LLC 54HC221AJ/883C - Dual marked (5962-8780502EA) Visit Rochester Electronics LLC Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy

    AAAA MARKING Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TSMC 0.35um

    Abstract: tsmc 0.18um Intersil marking code TSMC 0.25Um vanguard 0.35Um tsmc 0.18-um utac qfn TSMC 90nm TW6818-LA1-GR
    Text: Nomenclature Guide TW Types TW aaaa bb - c d e f g# - h j k l PREFIX DEVICE NUMBER AT: Auto Wafer EP: Epi Wafer l - OPTIONS S = SLT B = Burn-in H = High Temp. Testing I = Industrial V = High Volt Testing T = Tape & Reel Packing c - PROCESS This character is included in the


    Original     		TW6815-LA1-GR TW6816-LA1-GR TW6817-LA1-GR TW6818-LA1-GR TW6932-LA1-GR 1-888-INTERSIL TSMC 0.35um tsmc 0.18um Intersil marking code TSMC 0.25Um vanguard 0.35Um tsmc 0.18-um utac qfn TSMC 90nm PDF

    Untitled

    Abstract: No abstract text available
    Text: High Tech LED Pen Light PLED34A BRIGHT 14 • White LED delivers 14 lumens • Focused lens projects concise spot LONG LASTING • Runs up to 26 hours on one set of batteries • Momentary switch extends run time • Twist switch for steady on Powered by Energizer MAX® AAAA


    Original     		PLED34A 9429B PDF

    TSMC 0.18Um

    Abstract: No abstract text available
    Text: Nomenclature Guide TW Types TW aaaa bb - c d e f g# - h j k l PREFIX DEVICE NUMBER AT: Auto Wafer EP: Epi Wafer l - OPTIONS S = SLT B = Burn-in H = High Temp. Testing I = Industrial V = High Volt Testing T = Tape & Reel Packing c - PROCESS This character is included in the


    Original     		6815-LA1-GR TW6816-LA1-GR TW6817-LA1-GR TW6818-LA1-GR TW6932-LA1-GR 1-888-INTERSIL TSMC 0.18Um PDF

    W91B1

    Abstract: W91G1 W91F1 W91C1
    Text: E PIN 1 INDICATOR MARKING COMMON DIMENSIONS A3 A1 1 AAAA A D A2 A See Note 7 SIDE VIEW TOP VIEW 0.64 0.05 A1 0.19 0.03 A2 0.45 REF 0.025 BASIC A3 0.05 S S A E1 b 0.27 D1 0.80 E1 0.80 e 0.40 BASIC SD 0.00 BASIC SE 0.00 BASIC 0.03 SE e B C E SD B D1 A 1 2 3


    Original     		W91C1 W91G1 W91B1 W91F1 PDF

    marking aaaa

    Abstract: Marking 241
    Text: PIN 1 INDICATOR E MARKING COMMON DIMENSIONS 1 A A3 AAAA D 0.64 0.05 A1 0.19 0.03 A2 0.45 REF 0.025 BASIC A3 A1 A2 0.05 S S TOP VIEW A A See Note 7 SIDE VIEW E1 SE b 0.27 D1 1.60 E1 1.60 e 0.40 BASIC SD 0.00 BASIC SE 0.00 BASIC 0.03 e B E E SD D C D1 B A 1


    Original     		W252H2 W252D2 W252G2 W252F2 marking aaaa Marking 241 PDF

    T-1233

    Abstract: T1233-1 E k m QFN 3X3 2D22 T1233 AAAA Marking marking aaaa MO220 weed T12333
    Text: NE - 1 X e E MARKING E/2 D2/2 (ND - 1) X e D/2 AAAA e CL D D2 k CL b 0.10 M C A B E2/2 L E2 CL 0.10 C CL 0.08 C A A2 A1 L L e e PACKAGE OUTLINE 12, 16L THIN QFN, 3x3x0.8mm 21-0136 F 1 2 PKG 12L 3x3 16L 3x3 REF. MIN. NOM. MAX. MIN. NOM. MAX. A 0.70 0.75 0.80


    Original     		SPP-012. MO220 T-1233 T1233-1 E k m QFN 3X3 2D22 T1233 AAAA Marking marking aaaa weed T12333 PDF

    Untitled

    Abstract: No abstract text available
    Text: I I V I EW ON MATING S I D E u AA AA AAAA 'CMm^-miûr^œa'Ki — C M n ' r m t o r ^ œ c r s — CMC'winio^ooCT's — CM i—i * - i*— ' CNJ ^J CMCMC vJ CMCNI CNJ CvJ C M C O ^ C O 2 4 STANDARD CONTAC TS L = 4 , 5 Marking Standard Perform ance level G I/O = Contact area level 1 / Termination tin


    OCR Scan     		SD-8504B-0004 PS-85042-0001 SD-85048-1275 PDF

    DC37 series connectors

    Abstract: 80C517A SAB 80C517A
    Text: SIEMENS Microcomputer Components Technical Support Group Munich HL MCB AT1 Errata Sheet August 23, 1995 / Release 1.2 Device : Marking : SAB 80C517A BE These parts of the SAB 80C517A can be identified by the letters "BE" below the part number. The parts are mounted in Plastic Leaded Chip Carrier P-LCC-84


    Original     		80C517A 80C517A P-LCC-84) P-MQFP-100-2) 80C517A, DC37 series connectors SAB 80C517A PDF

    MARKING SAB

    Abstract: 80C515A AAAA Marking AAAA marking Bb
    Text: SIEMENS Microcomputer Components Technical Support Group Munich HL MCB PD/AT1 Errata Sheet June 30, 1994 / Release 1.0 Device : Marking : SAB 80C515A BB These parts of the SAB 80C515A can be identified by the letters "BB" below the part number. The parts are mounted in a Plastic Leaded Chip Carrier P-LCC-68


    Original     		80C515A 80C515A P-LCC-68) P-MQFP-80-2) 80C515A, MARKING SAB AAAA Marking AAAA marking Bb PDF

    80C535

    Abstract: 80C515 marking 80c515 marking DA marking EA 80C515A CA Marking marking AAAA siemens 80c535
    Text: SIEMENS Microcomputer Components Technical Support Group Munich HL MCB MC PD 2 Errata Sheet March 21, 1994 / Release 1.2 Device : Marking : SAB 80C515 / 80C535 DA These parts of the SAB 80C515 / 80C535 can be identified by the letters "DA" below the part number. The parts are mounted in a plastic leaded chip carrier


    Original     		80C515 80C535 80C535 P-LCC-68) 80C535, marking 80c515 marking DA marking EA 80C515A CA Marking marking AAAA siemens 80c535 PDF

    BST60

    Abstract: No abstract text available
    Text: HYB3116160BSJ/BST L -50/-60/-70 HYB3118160BSJ/BST(L)-50/-60/-70 1M x 16-Bit Dynamic RAM (1k & 4k -Refresh) Advanced Information • • • • • • • • • • • • • 1 048 576 words by 16-bit organization 0 to 70 °C operating temperature Performance:


    Original     		HYB3116160BSJ/BST HYB3118160BSJ/BST 16-Bit HYB3118160BSJ/BST-50) HYB3118160BSJ/BST-60) HYB3118160BSJAAAAAAAAAAAAAAAAAAA HYB3116 160BSJ/BST 16-DRAM BST60 PDF

    AMS 3630

    Abstract: a06 transistor Q62702-F1591 ff 0401 transistor A06 marking A06 BFP420 A06 Code "A06" RF Semiconductor BFP420 application notes BFP420
    Text: SIEGET 25 BFP420 NPN Silicon RF Transistor l For High Gain Low Noise Amplifiers l For Oscillators up to 10 GHz l Noise Figure F = 1.05 dB at 1.8 GHz Outstanding G = 20 dB at 1.8 GHz l Transition Frequency f = 25 GHz l Gold metalization for high reliability


    Original     		BFP420 25-Line OT343 Q62702-F1591 AMS 3630 a06 transistor Q62702-F1591 ff 0401 transistor A06 marking A06 BFP420 A06 Code "A06" RF Semiconductor BFP420 application notes BFP420 PDF

    smd marking AAAA

    Abstract: bt 330 HYB3116400 HYB3117400 400BJ 4Mx4 DRAM
    Text: 3.3V 4M x 4-Bit Dynamic RAM HYB3116400BJ/BT L -50/-60/-70 HYB3117400BJ/BT(L) -50/-60/-70 Advanced Information • • • • • • • • • • • 4 194 304 words by 4-bit organization 0 to 70 °C operating temperature Performance: -50 -60 -70 tRAC


    Original     		HYB3116400BJ/BT HYB3117400BJ/BT HYB3117400BJ/BT-50) HYB3117400BJ/BT-60) HYB3117400BJ/BT-70) 400BJ/BT P-SOJ-26/24-1 GPJ05628 GPX05857 P-TSOPII-26/24-1 smd marking AAAA bt 330 HYB3116400 HYB3117400 400BJ 4Mx4 DRAM PDF

    HYB3117405

    Abstract: HYB5116405 HYB5117405 HYB3116405
    Text: 4M x 4 - Bit Dynamic RAM 2k & 4k Refresh Hyper Page Mode- EDO HYB5116405BJ/BT-50/-60 HYB5117405BJ/BT-50/-60 HYB3116405BJ(L)/BT(L)-50/-60 HYB3117405BJ(L)/BT(L)-50/-60 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 °C operating temperature


    Original     		HYB5116405BJ/BT-50/-60 HYB5117405BJ/BT-50/-60 HYB3116405BJ HYB3117405BJ HYB5116405 HYB3116405 HYB5117415 HYB5116 405BJ-50/-60 HYB3116 HYB3117405 HYB5116405 HYB5117405 HYB3116405 PDF

    HYB3116165BSJ

    Abstract: HYB3118165 HYB3118165BSJ HYB5118165 P-TSOP 5118165BSJ-60
    Text: 1M x 16-Bit Dynamic RAM 1k & 4k Refresh Hyper Page Mode- EDO HYB5116165BSJ-50/-60 HYB5116165BSJ-50/-60 HYB3116165BSJ/(BST(L)-50/-60 HYB3118165BSJ/(BST(L)-50/-60 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature


    Original     		16-Bit HYB5116165BSJ-50/-60 HYB3116165BSJ/ HYB3118165BSJ/ HYB5116165 HYB3116165 HYB5118165 HYB3118165 HYB3116165BSJ HYB3118165 HYB3118165BSJ HYB5118165 P-TSOP 5118165BSJ-60 PDF

    HYB3116400

    Abstract: HYB3117400 HYB5116400 HYB5117400
    Text: 4M x 4 - Bit Dynamic RAM 2k & 4k Refresh Fast Page Mode HYB5116400BJ/BT-50/-60 HYB5117400BJ/BT-50/-60 HYB3116400BJ(L)/BT(L)-50/-60 HYB3117400BJ(L)/BT(L)-50/-60 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 °C operating temperature


    Original     		HYB5116400BJ/BT-50/-60 HYB5117400BJ/BT-50/-60 HYB3116400BJ HYB3117400BJ HYB5116400 HYB3116400 HYB5117400 HYB31 HYB5116 400BJ-50/-60 HYB3116400 HYB3117400 HYB5116400 HYB5117400 PDF

    Q67100-Q1092

    Abstract: Q67100-Q1093 Q67100-Q1094 WL10
    Text: 2M x 8-Bit Dynamic RAM HYB5117800BSJ-50/-60/-70 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 °C operating temperature • Performance: -50 -60 -70 tRAC RAS access time 50 60 70 ns tCAC CAS access time 13 15 20 ns tAA Access time from address


    Original     		HYB5117800BSJ-50/-60/-70 5117800BSJ-50/-60/-70 81max GPJ05699 P-SOJ-28-3 Q67100-Q1092 Q67100-Q1093 Q67100-Q1094 WL10 PDF

    HYB5117800

    Abstract: HYB3117800 smd marking AAAA wl4 smd marking
    Text: 2M x 8 - Bit Dynamic RAM 2k Refresh Fast Page Mode HYB5117800BJ/BSJ-50/-60 HYB3117800BJ(L)/BSJ(L)-50/-60 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 °C operating temperature • Fast Page Mode operation • Performance: •


    Original     		HYB5117800BJ/BSJ-50/-60 HYB3117800BJ HYB5117800 HYB3117800 117800BJ P-SOJ-28-4 300mil) SOJ-28 P-SOJ-28-3 HYB5117800 HYB3117800 smd marking AAAA wl4 smd marking PDF

    marking wl4

    Abstract: smd marking AAAA marking code WL3 HYB3117805 HYB5117805 P-SOJ-28-4 smd code marking wl5
    Text: 2M x 8 - Bit Dynamic RAM 2k Refresh Hyper Page Mode- EDO HYB5117805BJ/BSJ-50/-60 HYB3117805BJ(L)/BSJ(L)-50/-60 Advanced Information • 2 097 152 words by 8-bit organization • 0 to 70 °C operating temperature • Hyper Page Mode - EDO - operation •


    Original     		HYB5117805BJ/BSJ-50/-60 HYB3117805BJ HYB5117805 HYB3117805 117805BJ P-SOJ-28-3 400mil) 81max GPJ05699 P-SOJ-28-4 marking wl4 smd marking AAAA marking code WL3 HYB3117805 HYB5117805 P-SOJ-28-4 smd code marking wl5 PDF

    AAAA

    Abstract: p0603 CGY96 marking aaa aaa marking code
    Text: GaAs MMIC CGY96 Preliminary Datasheet *Power amplifier for GSM class 4 phones *3.2 W 35dBm output power at 3.5 V *Overall power added efficiency 50 %


    Original     		CGY96 35dBm) AAAA p0603 CGY96 marking aaa aaa marking code PDF

    smd marking AAAA

    Abstract: AAAA mmic HL 30 MMIC marking 81 CGY94 Q68000-A9124 Siemens MMIC marking aaa marking AAAA
    Text: GaAs MMIC CGY 94 Preliminary Datasheet * Power amplifier for GSM or AMPS application * Fully integrated 2 stage amplifier * Operating voltage range: 2.7 to 6 V


    Original     		Q68000-A9124 smd marking AAAA AAAA mmic HL 30 MMIC marking 81 CGY94 Q68000-A9124 Siemens MMIC marking aaa marking AAAA PDF

    siemens rs 1016

    Abstract: B37940-K5220-J62 B54102 B3749 0805CS-270XMBC type pd21 0805CS-220XMBC Q62702-G44 Siemens MMIC
    Text: CGY 120 GaAs MMIC Datasheet * Monolithic microwave IC MMIC-Amplifier for mobile communication * Variable gain amplifier for GSM/PCN applications * Gain Control range over 50dB


    Original     		Q62702-G44 PD21/Gü siemens rs 1016 B37940-K5220-J62 B54102 B3749 0805CS-270XMBC type pd21 0805CS-220XMBC Q62702-G44 Siemens MMIC PDF

    smd marking AAAA

    Abstract: marking gain stage GaAs MMIC AMPLIFIER 0.3 GMSK 0.3 GMSK 900mhz amplifier 900mhz HP MMIC marking code 5 smd marking f2 vtr 150 CGY92
    Text: GaAs MMIC CGY92 Datasheet *Power amplifier for GSM or AMPS application *Fully integrated 2 stage amplifier *Operating voltage range: 2.7 to 6 V *Overall power added efficiency 45 %


    Original     		CGY92 Q68000-A8884 smd marking AAAA marking gain stage GaAs MMIC AMPLIFIER 0.3 GMSK 0.3 GMSK 900mhz amplifier 900mhz HP MMIC marking code 5 smd marking f2 vtr 150 CGY92 PDF

    a06 transistor

    Abstract: Code "A06" RF Semiconductor transistor A06 f 1405 zs BFP450 A06 NPN Siemens 1713 Q62702-F1590 marking A06 SIEMENS BFP450
    Text: SIEGET 25 BFP450 NPN Silicon RF Transistor l For Medium Power Amplifiers l Compression Point P = +19 dBm at 1.8 GHz -1dB l l l Maximum Available Gain Gma = 14 dB at 1.8 GHz Noise Figure F = 1.25 dB at 1.8 GHz Transition Frequency fT = 24 GHz Gold metalization for high reliability


    Original     		BFP450 25-Line Transistor25 OT343 Q62702-F1590 a06 transistor Code "A06" RF Semiconductor transistor A06 f 1405 zs BFP450 A06 NPN Siemens 1713 Q62702-F1590 marking A06 SIEMENS BFP450 PDF