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    Chicago Miniature Lighting LLC A9A-120

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    Aptiv PLC M28804/2-3N

    Automotive Connectors CONN ASY,RA9A12C088PN000
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    A9A12 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: iPEM 2.4Gb SDRAM-DDR AS4DDR32M72PBG1 32Mx72 DDR SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS DDR SDRAM Data Rate = 200, 250, 266, 333Mbps Package: • 208 Plastic Ball Grid Array PBGA , 16 x 23mm-1.0mm pitch 2.5V ±0.2V core power supply


    Original     		PDF AS4DDR32M72PBG1 32Mx72 333Mbps 23mm-1 208-PBGA

    NT5DS16M16BF-6K

    Abstract: NT5DS32M8BT NT5DS16M16BT-6K NT5DS16M16BT NT5DS64M4BT NT5DS32M
    Text: NT5DS64M4BT NT5DS32M8BT NT5DS16M16BT NT5DS64M4BF NT5DS32M8BF NT5DS16M16BF NT5DS64M4BS NT5DS32M8BS NT5DS16M16BS NT5DS64M4BG NT5DS32M8BG NT5DS16M16BG 256Mb DDR SDRAM Features • Data mask DM for write data • DLL aligns DQ and DQS transitions with CK transitions


    Original     		PDF NT5DS64M4BT NT5DS32M8BT NT5DS16M16BT NT5DS64M4BF NT5DS32M8BF NT5DS16M16BF NT5DS64M4BS NT5DS32M8BS NT5DS16M16BS NT5DS64M4BG NT5DS16M16BF-6K NT5DS32M8BT NT5DS16M16BT-6K NT5DS16M16BT NT5DS64M4BT NT5DS32M

    DDR200

    Abstract: DDR266A DDR266B IBMN62540 IBMN625404GT3B IBMN62580 IBMN625804GT3B
    Text: IBMN625404GT3B IBMN625804GT3B 256Mb Double Data Rate Synchronous DRAM Preliminary Features CAS Latency and Frequency CAS Latency Maximum Operating Frequency MHz * DDR266A (7N) DDR266B (75N) DDR200 (8N) 133 143 100 133 100 125 2 2.5 * Values are nominal (exact tCK should be used).


    Original     		PDF IBMN625404GT3B IBMN625804GT3B 256Mb DDR266A DDR266B DDR200 29L0011 E36997B DDR200 DDR266A DDR266B IBMN62540 IBMN625404GT3B IBMN62580 IBMN625804GT3B

    DDR200

    Abstract: DDR266A HYB25D256400AT-7 HYB25D256400AT-8 HYB25D256800AT-7 HYB25D256800AT-8 TSOP66
    Text: HYB25D256400/800AT 256-MBit Double Data Rata SDRAM Features CAS Latency and Frequency CAS Latency 2 2.5 Maximum Operating Frequency MHz DDR266A DDR200 -7 -8 133 100 143 125 • Double data rate architecture: two data transfers per clock cycle • Bidirectional data strobe (DQS) is transmitted


    Original     		PDF HYB25D256400/800AT 256-MBit DDR266A DDR200 DDR200 DDR266A HYB25D256400AT-7 HYB25D256400AT-8 HYB25D256800AT-7 HYB25D256800AT-8 TSOP66

    A48P4616

    Abstract: DDR333 DDR400
    Text: A48P4616 Preliminary 16M X 16 Bit DDR DRAM Document Title 16M X 16 Bit DDR DRAM Revision History Rev. No. 0.0 History Issue Date Remark Initial issue September 5, 2005 Preliminary Preliminary September, 2005, Version 0.0 AMIC Technology, Corp. A48P4616 Features


    Original     		PDF A48P4616 400mil; A48P4616 DDR333 DDR400

    Untitled

    Abstract: No abstract text available
    Text: W3E16M64S-XBX 16Mx64 DDR SDRAM FEATURES BENEFITS  DDR Data Rate = 200, 250, 266Mbps  50% SPACE SAVINGS  Package: • 219 Plastic Ball Grid Array PBGA , 21 x 25mm  Reduced part count  2.5V ±0.2V core power supply  Reduced I/O count


    Original     		PDF W3E16M64S-XBX 16Mx64 266Mbps

    Untitled

    Abstract: No abstract text available
    Text: 128MB, 256MB x64 200-PIN DDR SODIMMs MT8VDDT1664HG MT8VDDT3264HG SMALL-OUTLINE DDR SDRAM MODULE - 128MB - 256MB For the latest data sheet, please refer to the Micron Web site: www.micron.com/moduleds FEATURES 200-Pin SODIMM MO-224 • 200-pin small-outline dual in-line memory module


    Original     		PDF 128MB, 256MB 200-PIN MT8VDDT1664HG MT8VDDT3264HG 128MB MO-224

    Untitled

    Abstract: No abstract text available
    Text: 64MB, 128MB x72, ECC 184-PIN DDR SDRAM DIMMs DDR SDRAM DIMM MODULE MT5VDDT872A, MT5VDDT1672A For the latest data sheet, please refer to the Micron Web site: www.micron.com/moduleds FEATURES 184-Pin DIMM (MO 206) • JEDEC standard 184-pin, dual in-line memory


    Original     		PDF 128MB 184-PIN MT5VDDT872A, MT5VDDT1672A 184-pin, 333MT/s PC2700, PC2100 PC1600

    57256

    Abstract: DDR200 DDR266B MT46V16M16 MT46V32M8 MT46V64M4
    Text: PRELIMINARY‡ 256Mb: x4, x8, x16 DDR SDRAM DOUBLE DATA RATE DDR SDRAM MT46V64M4 – 16 Meg x 4 x 4 banks MT46V32M8 – 8 Meg x 8 x 4 banks MT46V16M16 – 4 Meg x 16 x 4 banks For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/datasheets/


    Original     		PDF 256Mb: MT46V64M4 MT46V32M8 MT46V16M16 256Mx4x8x16DDR 57256 DDR200 DDR266B MT46V16M16 MT46V32M8 MT46V64M4

    HYB25DC256163CE

    Abstract: No abstract text available
    Text: Datasheet, Rev.1.00, Feb. 2006 HYB25DC256163CE-5.0 HYB25DC256163CE-6.0 16M x 16 Double Data Rate SDRAM DDR SDRAM Green Product Memory Products Edition 2006-02 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München, Germany Infineon Technologies AG 2006.


    Original     		PDF HYB25DC256163CE-5 HYB25DC256163CE-6 02102006-NEDF-FR54 HYB25DC256163CE- 256-Mbit GPX09261 P-TSOPII-66-1 HYB25DC256163CE

    W641GG2KB

    Abstract: gddr3 schematic WBGA-136 W641GG2
    Text: W641GG2KB 1-Gbit GDDR3 Graphics SDRAM Table of Contents 1. GENERAL DESCRIPTION . 6 2. FEATURES . 7


    Original     		PDF W641GG2KB A01-001 W641GG2KB gddr3 schematic WBGA-136 W641GG2

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE‡ 128MB, 256MB x64 184-PIN DDR SDRAM DIMMs DDR SDRAM DIMM MODULE MT8VDDT1664AG MT8VDDT3264AG For the latest data sheet, please refer to the Micron Web site: www.micron.com/datasheets FEATURES 184-Pin DIMM MO-206 • 184-pin dual in-line memory module (DIMM)


    Original     		PDF 128MB, 256MB 184-PIN 128MB DD8C16 32X64AG

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE‡ 1GB x72, ECC 184-PIN DDR DIMM REGISTERED DDR SDRAM DIMM MODULE MT36VDDF12872 – 1GB For the latest data sheet, please refer to the Micron Web site: www.micron.com/moduleds Features Figure 1: 184-Pin DIMM MO-206 • 184-pin, dual in-line memory module (DIMM)


    Original     		PDF 184-PIN 184-pin, PC1600, PC2100, ddf36c128x72g

    Untitled

    Abstract: No abstract text available
    Text: 64MB, 128MB X64 184-PIN DDR SDRAM DIMM DDR SDRAM DIMM MODULE MT4VDDT864A, MT4VDDT1664A For the latest data sheet, please refer to the Micron Web site: www.micron.com/moduleds FEATURES Figure 1: 184-Pin DIMM (MO–206) • JEDEC standard 184-pin, dual in-line memory


    Original     		PDF 128MB 184-PIN 184-pin, 333MT/s PC1600, PC2100, PC2700 09005aef806e129d 16X64AG

    W3E16M72S-XBX

    Abstract: W3E32M72S-XBX
    Text: White Electronic Designs W3E16M72S-XBX 16Mx72 DDR SDRAM FEATURES DDR SDRAM Rate = 200, 250, 266 Package: • 219 Plastic Ball Grid Array PBGA , 32 x 25mm BENEFITS 40% SPACE SAVINGS Reduced part count Reduced I/O count • 34% I/O Reduction 2.5V ±0.2V core power supply


    Original     		PDF W3E16M72S-XBX 16Mx72 W3E16M72S-XBX W3E32M72S-XBX

    81BB

    Abstract: BAA marking code DDR200 DDR266 HYB25D256 HYB25D256160BT-5 HYB25D256400B HYB25D256400BC-5 HYB25D256800BT-5
    Text: Data Sheet, Rev. 1.2, Feb. 2004 HYB25D256400B[T/C] L HYB25D256800B[T/C](L) HYB25D256160B[T/C](L) 256 Mbit Double Data Rate SDRAM DDR SDRAM Memory Products N e v e r s t o p t h i n k i n g . Edition 2004-02 Published by Infineon Technologies AG, St.-Martin-Strasse 53,


    Original     		PDF HYB25D256400B HYB25D256800B HYB25D256160B HYB25D256 256-Mbit P-TSOPII-66-1 02102004-TSR1-4ZWW 81BB BAA marking code DDR200 DDR266 HYB25D256160BT-5 HYB25D256400BC-5 HYB25D256800BT-5

    U15B

    Abstract: No abstract text available
    Text: PRELIMINARY‡ 1GB, 2GB x72 184-PIN REGISTERED DDR SDRAM DIMMs DDR SDRAM DIMM MT36VDDT12872 MT36VDDT25672 For the latest data sheet, please refer to the Micron Web site: www.micron.com/moduleds FEATURES 184-Pin DIMM MO-206 • 184-pin, dual in-line memory modules (DIMM)


    Original     		PDF 184-PIN MT36VDDT12872 MT36VDDT25672 MO-206 184-pin, PC1600 PC2100 DD36C128 256x72G U15B

    16GB

    Abstract: DDR DIMM pinout micron 184
    Text: ADVANCE‡ 256MB, 512MB ECC x72 184-pin DDR SDRAM DIMMs DDR SDRAM DIMM MODULE MT18VDDT3272AG - 256MB MT18VDDT6472AG - 512MB For the latest data sheet, please refer to the Micron Web site: www.micron.com/datasheets FEATURES 184-Pin DIMM MO-206 • 184-pin dual in-line memory module (DIMM)


    Original     		PDF 256MB, 512MB 184-pin 256MB DD18C32 64X72AG 16GB DDR DIMM pinout micron 184

    MT16VDDS6464HG-265

    Abstract: No abstract text available
    Text: 512MB x64 200-PIN DDR SODIMM MT16VDDS6464H - 512MB SMALL-OUTLINE DDR SDRAM MODULE For the latest data sheet, please refer to the Micron Web site: www.micron.com/moduleds FEATURES 200-Pin SODIMM (Twin-Die) MO-224 • 200-pin, small-outline, dual in-line memory


    Original     		PDF 512MB 200-PIN 200-pin, PC1600 PC2100 DDS16C64X64HG MT16VDDS6464HG-265

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY‡ 512Mb: x4, x8, x16 DDR SDRAM DOUBLE DATA RATE DDR SDRAM MT46V128M4 – 32 MEG X 4 X 4 BANKS MT46V64M8 – 16 MEG X 8 X 4 BANKS MT46V32M16 – 8 MEG X 16 X 4 BANKS For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/datasheets


    Original     		PDF 512Mb: 09005aef8076894f 512MBDDRx4x8x16

    Untitled

    Abstract: No abstract text available
    Text: 128MB, 256MB x64 200-PIN DDR SODIMMs MT8VDDT1664HG MT8VDDT3264HG SMALL-OUTLINE DDR SDRAM MODULE - 128MB - 256MB For the latest data sheet, please refer to the Micron Web site: www.micron.com/moduleds FEATURES 200-Pin SODIMM MO-224 • 200-pin small-outline dual in-line memory module


    Original     		PDF 128MB, 256MB 200-PIN PC2100 PC1600 128MB DD8C16

    Untitled

    Abstract: No abstract text available
    Text: PREVIEW‡ 256MB x64 184-PIN DDR SDRAM DIMMs DDR SDRAM DIMM MODULE MT16VDDT3264A - 256MB For the latest data sheet, please refer to the Micron Web site: www.micron.com/moduleds FEATURES • • • • • • • • • • • • • • • • •


    Original     		PDF 256MB 184-PIN PC3200 512MB DD16C32 64X64AG

    W3E64M72S-XBX

    Abstract: No abstract text available
    Text: White Electronic Designs W3E64M72S-XBX ADVANCED* 64Mx72 DDR SDRAM BENEFITS FEATURES Data rate = 200, 250, 266 and 333Mbs 66% Space Savings vs. TSOP Package: Reduced part count • 219 Plastic Ball Grid Array PBGA , 25 x 32mm 55% I/O reduction vs TSOP 2.5V ±0.2V core power supply


    Original     		PDF W3E64M72S-XBX 64Mx72 333Mbs 512MByte W3E64M72S-ESB W3E64M72S-XBX

    timing controller SHART

    Abstract: T21N K4U52324Q SAMSUNG GDDR4 K4U52324QE-BC09 GDDR4
    Text: 512M GDDR4 SGRAM K4U52324QE 512Mbit GDDR4 SGRAM 2M x 32Bit x 8 Banks Graphic Double Data Rate 4 Synchronous DRAM with Uni-directional Data Strobe and DLL 136Ball FBGA Revision 1.0 June 2006 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,


    Original     		PDF K4U52324QE 512Mbit 32Bit 136Ball timing controller SHART T21N K4U52324Q SAMSUNG GDDR4 K4U52324QE-BC09 GDDR4