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    A7 TRANSISTOR SMD Search Results

    A7 TRANSISTOR SMD Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    A7 TRANSISTOR SMD Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A7 SMD TRANSISTOR

    Abstract: SMD A8 Transistor smd transistor A8 smd transistor A11 SMD Transistor A12 smd transistor a9 A12 SMD TRANSISTOR smd transistor A7 smd transistor A6 SMD a7 Transistor
    Text: HS-6664RH TM Data Sheet August 2000 File Number Radiation Hardened 8kx8 CMOS PROM Features The Intersil HS-6664RH is a radiation hardened 64k CMOS • Electrically Screened to SMD # 5962-95626 [ /Title PROM, organized in an 8k word by 8-bit format. The chip is


    Original     		PDF HS-6664RH HS-6664RH HS6664R A7 SMD TRANSISTOR SMD A8 Transistor smd transistor A8 smd transistor A11 SMD Transistor A12 smd transistor a9 A12 SMD TRANSISTOR smd transistor A7 smd transistor A6 SMD a7 Transistor

    A7 SMD TRANSISTOR

    Abstract: SMD a7 Transistor smd transistor marking a7 smd TRANSISTOR sot-23 a7 smd transistor A7 KO3407 smd transistor A7 s 52 smd a7 smd transistor A7 sot 23 smd diode a7
    Text: Transistors IC SMD Type P-Channel Enhancement Mode Field Effect Transistor KO3407 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 RDS ON 87m 1 (VGS = -10V) 2 +0.1 0.95-0.1 +0.1 1.9-0.1 (VGS = -4.5V) +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1


    Original     		PDF KO3407 OT-23 A7 SMD TRANSISTOR SMD a7 Transistor smd transistor marking a7 smd TRANSISTOR sot-23 a7 smd transistor A7 KO3407 smd transistor A7 s 52 smd a7 smd transistor A7 sot 23 smd diode a7

    HX6256

    Abstract: D-10
    Text: Military & Space Products 32K x 8 STATIC RAM—SOI HX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 µm Process (Leff = 0.6 µm) • Listed On SMD#5962–95845 • Total Dose Hardness through 1x106 rad(SiO2)


    Original     		PDF HX6256 1x106 1x1014 1x109 1x1011 28-Lead MIL-STD-1835, CDIP2-T28 36-Lead HX6256 D-10

    SMD TRANSISTOR MARKING A7

    Abstract: PBSS8110D PBSS9110D MOSFET TRANSISTOR SMD MARKING CODE js TRANSISTOR SMD MARKING CODES a7
    Text: PBSS9110D 100 V, 1 A PNP low VCEsat BISS transistor Rev. 02 — 13 July 2006 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS9110D OT457 SC-74) PBSS8110D. PBSS9110D SMD TRANSISTOR MARKING A7 PBSS8110D MOSFET TRANSISTOR SMD MARKING CODE js TRANSISTOR SMD MARKING CODES a7

    Untitled

    Abstract: No abstract text available
    Text: PBSS9110D 100 V, 1 A PNP low VCEsat BISS transistor Rev. 03 — 22 November 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.


    Original     		PDF PBSS9110D OT457 SC-74) PBSS8110D. PBSS9110D

    honeywell sn f10

    Abstract: HX6356 A12 SMD TRANSISTOR Honeywell load cell
    Text: Aerospace Electronics 32K x 8 STATIC RAM—SOI HX6356 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 µm Process (Leff = 0.6 µm) • Listed On SMD# 5962-95845 • Total Dose Hardness through 1x106 rad(SiO2) • Fast Read/Write Cycle Times


    Original     		PDF HX6356 1x106 1x1014 1x1011 1x1012 1x10-10 honeywell sn f10 HX6356 A12 SMD TRANSISTOR Honeywell load cell

    HX84050

    Abstract: No abstract text available
    Text: Military & Space Products 5 MEGABIT MEMORY MODULE HX84050 RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 µm Process (Leff = 0.6 µm) • Listed on SMD #5962-96840 6 • Total Dose Hardness through 1x10 rad (SiO2) • Neutron Hardness through 1x1014 cm-2


    Original     		PDF HX84050 1x1014 1x109 1x1011 1x10-10 200-Lead HX84050

    Untitled

    Abstract: No abstract text available
    Text: PBSS4630PA 30 V, 6 A NPN low VCEsat BISS transistor Rev. 01 — 6 May 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with


    Original     		PDF PBSS4630PA OT1061 PBSS5630PA.

    smd transistor A6

    Abstract: y4 smd transistor y6 smd transistor Transistor SMD a7 Y5 smd transistor smd transistor A7 y1 smd transistor smd transistor A5 A7 SMD TRANSISTOR 5962R9672602TXC
    Text: ACTS541T Data Sheet July 1999 Radiation Hardened Octal Three-State Buffer/Line Driver Intersil’s Satellite Applications FlowTM SAF devices are fully tested and guaranteed to 100kRAD total dose. These QML Class T devices are processed to a standard flow intended


    Original     		PDF ACTS541T 100kRAD ACTS541T smd transistor A6 y4 smd transistor y6 smd transistor Transistor SMD a7 Y5 smd transistor smd transistor A7 y1 smd transistor smd transistor A5 A7 SMD TRANSISTOR 5962R9672602TXC

    smd transistor A6

    Abstract: y4 smd transistor A7 SMD TRANSISTOR smd transistor A5 y6 smd transistor smd a5 gnd smd transistor A7 smd transistor y5 transistor SMD a6 smd transistor A6 3
    Text: ACTS541T Semiconductor Data Sheet January 1999 Radiation Hardened Octal Three-State Buffer/Line Driver Harris’ Satellite Applications FlowTM SAF devices are fully tested and guaranteed to 100kRAD total dose. These QML Class T devices are processed to a standard flow intended


    Original     		PDF ACTS541T 100kRAD ACTS541T 1-800-4-HARRIS smd transistor A6 y4 smd transistor A7 SMD TRANSISTOR smd transistor A5 y6 smd transistor smd a5 gnd smd transistor A7 smd transistor y5 transistor SMD a6 smd transistor A6 3

    transistor SMD Y1

    Abstract: y4 smd transistor y1 smd transistor y6 smd transistor smd transistor A6 A7 SMD TRANSISTOR 5962R9672602TRC 5962R9672602TXC ACTS541DTR-02 ACTS541KTR-02
    Text: ACTS541T TM Data Sheet July 1999 Radiation Hardened Octal Three-State Buffer/Line Driver Features • QML Class T, Per MIL-PRF-38535 Intersil’s Satellite Applications FlowTM SAF devices are fully tested and guaranteed to 100kRAD total dose. These QML Class T devices are processed to a standard flow intended


    Original     		PDF ACTS541T FN4612 MIL-PRF-38535 100kRAD ACTS541T transistor SMD Y1 y4 smd transistor y1 smd transistor y6 smd transistor smd transistor A6 A7 SMD TRANSISTOR 5962R9672602TRC 5962R9672602TXC ACTS541DTR-02 ACTS541KTR-02

    smd transistor A6 3

    Abstract: 5962R9671901TRC 5962R9671901TXC ACTS245DTR ACTS245KTR ACTS245T b3 smd transistor
    Text: ACTS245T Data Sheet July 1999 Radiation Hardened Octal Non-Inverting Bidirectional Bus Transceiver Intersil’s Satellite Applications FlowTM SAF devices are fully tested and guaranteed to 100kRAD Total Dose. These QML Class T devices are processed to a standard flow intended


    Original     		PDF ACTS245T 100kRAD ACTS245T MIL-PRF-38535 smd transistor A6 3 5962R9671901TRC 5962R9671901TXC ACTS245DTR ACTS245KTR b3 smd transistor

    smd transistor a9

    Abstract: A7 SMD TRANSISTOR smd transistor A8 smd transistor A6 SMD Transistor A12 SMD A8 Transistor HS1-6664RH-T smd transistor A11 smd transistor a4 SMD T28
    Text: HS-6664RH-T Data Sheet July 1999 File Number Radiation Hardened 8K x 8 CMOS PROM Features Intersil’s Satellite Applications FlowTM SAF devices are fully tested and guaranteed to 100kRAD total dose. These QML Class T devices are processed to a standard flow intended


    Original     		PDF HS-6664RH-T 100kRAD MIL-PRF-38535 HS-6664RH-T smd transistor a9 A7 SMD TRANSISTOR smd transistor A8 smd transistor A6 SMD Transistor A12 SMD A8 Transistor HS1-6664RH-T smd transistor A11 smd transistor a4 SMD T28

    smd transistor A6

    Abstract: A7 SMD TRANSISTOR smd transistor A7 SMD a7 Transistor smd transistor A5 Transistor SMD a7 b6 smd transistor SMD a6 Transistor transistor SMD A6 smd transistor A6 3
    Text: HCTS245T Data Sheet July 1999 Radiation Hardened Octal Bus Transceiver, Three-State, Non-Inverting Intersil’s Satellite Applications FlowTM SAF devices are fully tested and guaranteed to 100kRAD total dose. These QML Class T devices are processed to a standard flow intended


    Original     		PDF HCTS245T 100kRAD HCTS245T smd transistor A6 A7 SMD TRANSISTOR smd transistor A7 SMD a7 Transistor smd transistor A5 Transistor SMD a7 b6 smd transistor SMD a6 Transistor transistor SMD A6 smd transistor A6 3

    squib driver

    Abstract: AEB02726 AEP02725 AES02680 AES02722 AES02723 AET02609 AET02727 FIRING squib 6712
    Text: Dual Firing Airbag IC TLE 6712 Data Sheet 1 Overview 1.1 Features • Two independent squib channels each consisting of a high- side & a low-side switch • Thermal and short circuit protection for each switch • Current limitation for each firing loop P-DSO-24-1


    Original     		PDF P-DSO-24-1 squib driver AEB02726 AEP02725 AES02680 AES02722 AES02723 AET02609 AET02727 FIRING squib 6712

    dynamic ram binary cell

    Abstract: A7 W SMD TRANSISTOR A7 SMD TRANSISTOR SMD F14 transistor SMD f12 smd transistor A6 5962F9582301QXC 5962F9582301QYC SMD Transistor A12 5962F9582301VYC
    Text: HS-65647RH TM Data Sheet Radiation Hardened 8K x 8 SOS CMOS Static RAM The Intersil HS-65647RH is a fully asynchronous 8K x 8 radiation hardened static RAM. This RAM is fabricated using the Intersil 1.2 micron silicon-on-sapphire CMOS technology. This technology gives exceptional hardness to all types of


    Original     		PDF HS-65647RH HS-65647RH dynamic ram binary cell A7 W SMD TRANSISTOR A7 SMD TRANSISTOR SMD F14 transistor SMD f12 smd transistor A6 5962F9582301QXC 5962F9582301QYC SMD Transistor A12 5962F9582301VYC

    airbag

    Abstract: squib driver AEB02616 AEP02615 AES02680 AET02609 AET02618 TLE6714 FIRING squib
    Text: Quad Firing Airbag IC TLE 6714 Data Sheet 1 Overview 1.1 Features • Four independent squib channels each consisting of a high- side & a low-side switch • Thermal and short circuit protection for each switch • Current limitation for each firing loop P-DSO-28-1


    Original     		PDF P-DSO-28-1 airbag squib driver AEB02616 AEP02615 AES02680 AET02609 AET02618 TLE6714 FIRING squib

    HC6856

    Abstract: No abstract text available
    Text: Military & Space Products 32K x 8 STATIC RAM HC6856 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Bulk 0.8 µm Process Leff = 0.65 µm • Listed on SMD #5962-92153. Available as MIL-PRF-38535 QML Class Q and Class V • Total Dose Hardness through 1x106 rad(SiO2)


    Original     		PDF HC6856 MIL-PRF-38535 1x106 1x1014 1x109 1x10-10 1x1012 HC6856

    CDIP2-T28

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products 32K x 8 STATIC RAM—SOI HX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 |nm Process (Leff= 0.6 (xm) • Listed On SMD#5962-95845 • Total Dose Hardness through 1x106rad(Si02)


    OCR Scan     		PDF 1x106rad 1x101 1x109 HX6256 28-Lead CDIP2-T28

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products 32K x 8 STATIC RAM—SOI HX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 p.m Process (Leff= 0.6 p,m) • Listed On SMD#5962-95845 • Total Dose Hardness through 1x106rad(Si02)


    OCR Scan     		PDF 1x106rad 1x101 1x109 HX6256 28-Lead GQG1711

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Aerospace Electronics HX6356 32K x 8 STATIC RAM—SOI FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 |j.m Process (Left= 0.6 (im) • Listed On SMD# 5962-95845 • Total Dose Hardness through 1x106rad(S i02)


    OCR Scan     		PDF HX6356 1x106rad 1x101

    smd transistor NJ

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products 32K x 8 STATIC RAM— SOI HX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 |a,m Process (Leff= 0.6 |a,m) • Listed On SMD#5962-95845 • Total Dose Hardness through 1x106 rad(S i02)


    OCR Scan     		PDF 1x106 1x101 1x109 HX6256 28-Lead smd transistor NJ

    5962-95845

    Abstract: HX6356
    Text: Honeywell Aerospace Electronics 32K x 8 STATIC RAM—SOI HX6356 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 |a,m Process (Leff= 0.6 |a,m) • Listed On SMD# 5962-95845 • Total Dose Hardness through 1x106rad(S i02)


    OCR Scan     		PDF 1x106rad 1x101 HX6356 36-Lead 5962-95845 HX6356

    KD 2.d smd transistor

    Abstract: No abstract text available
    Text: Honeywell Military Products 32K x 8 RADIATION-HARDENED STATIC RAM HC6856 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Bulk 0.8 |um Process • Total Dose Hardness through 1x106 rad S i02 • Listed on SMD #5962-92153. Available as MIL-l-38535 QML Class Q and Class V


    OCR Scan     		PDF 1x106 1x1014cm 1x109 1x101 HC6856 MIL-l-38535 36-Lead KD 2.d smd transistor