a1f45
Abstract: 8C414
Text: 1 Datasheet 9EF 2 2 !F7"EFF# 9$%A5A$2 1 1 &F' " 1 1 1
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C91C918
A196FF
B1CE743
8A91D47
348A78C4E1
8C713A98
3817C376C8
68413A98
6D9A19C
a1f45
8C414
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A13B
Abstract: DQ17A-DQ0A A14B DQ4a DQ11A
Text: July 2004 Preliminary Information AS9C25512M2018L 2.5V 512K X 18 Synchronous Dual-port SRAM with 3.3V or 2.5V interface Features • True Dual-Port memory cells that allow simultaneous access of the same memory location • Organisation: 524,288 x 18 bits
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AS9C25512M2018L
19-bit
A13B
DQ17A-DQ0A
A14B
DQ4a
DQ11A
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beaglebone black
Abstract: KE4CN2H5A-A58 D2516EC4BXGGB NC107 MTFC4GLDEA
Text: A B C D C B A6A A6 1. Changed R46, R47,R48 to 0 ohms. 2. Changed R45 to 22 Ohms. Change was made due to production failures on some boards due to differences in impedances. A5C 5 4 THERE IS NO WARRANTY FOR THIS DESIGN , TO THE EXTENT PERMITTED BY APPLICABLE LAW. EXCEPT WHEN OTHERWISE STATED
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DQ20A
Abstract: A17a DQ18A be2a A13B
Text: July 2004 Preliminary Information AS9C25256M2036L 2.5V 256K X 36 Synchronous Dual-port SRAM with 3.3V or 2.5V interface Features • True Dual-Port memory cells that allow simultaneous access of the same memory location • Organisation: 262,144 x 36 bits
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AS9C25256M2036L
18Gbps
18-bit
DQ20A
A17a
DQ18A
be2a
A13B
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A17A
Abstract: A15A a17b diode A14A A11A A13A A14A AS9C25128M2036L AS9C25256M2036L be0b
Text: September 2004 Preliminary Information AS9C25256M2036L AS9C25128M2036L 2.5V 256/128K X 36 Synchronous Dual-port SRAM with 3.3V or 2.5V interface Features • True Dual-Port memory cells that allow simultaneous access of the same memory location • Organisation: 262,144/131,072 x 36[1]
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AS9C25256M2036L
AS9C25128M2036L
256/128K
18Gbps
A17A
A15A
a17b
diode A14A
A11A
A13A
A14A
AS9C25128M2036L
AS9C25256M2036L
be0b
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A17a
Abstract: a17b A18B-A0B diode A14A A14A A15A A16A AS9C25256M2018L AS9C25512M2018L DQ17A
Text: September 2004 Preliminary Information AS9C25512M2018L AS9C25256M2018L 2.5V 512/256K X 18 Synchronous Dual-port SRAM with 3.3V or 2.5V interface Features • True Dual-Port memory cells that allow simultaneous access of the same memory location • Organisation: 524,288/262,144 x 18[1]
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AS9C25512M2018L
AS9C25256M2018L
512/256K
A17a
a17b
A18B-A0B
diode A14A
A14A
A15A
A16A
AS9C25256M2018L
AS9C25512M2018L
DQ17A
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PDF
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55AX1000
Abstract: FP-1-35-G-10 FP-1-27-G-10 10A3500 10A35 A3600 1-GUSVT-610 A1B ABB 2-GSVT-48-A 2-GUSVT-410
Text: Variable Area Flowmeter, Glass Tube Models A3500 & A3600 Specification DataFile •■ Removable metering tube – for range changing or cleaning without removing meter from line ■■ External retaining spring and equal area ends on tube – prevents the tube moving under pressure,
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A3500
A3600
SS/A35/36
55AX1000
FP-1-35-G-10
FP-1-27-G-10
10A3500
10A35
A3600
1-GUSVT-610
A1B ABB
2-GSVT-48-A
2-GUSVT-410
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PDF
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MCM67B518
Abstract: MCM72BB32 MCM72BB64 Nippon capacitors
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 256KB and 512KB BurstRAM Secondary Cache Module for Pentium The MCM72BB32SG and MCM72BB64SG are designed to provide a burstable, high performance, 256K/512K L2 cache for the Pentium microprocessor. The modules are configured as 32K x 72 and 64K x 72 bits in a 160 pin card edge
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256KB
512KB
MCM72BB32SG
MCM72BB64SG
256K/512K
MCM67B518
MCM67B618
MCM72BB32
MCM72BB64
MCM72BB64
Nippon capacitors
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PDF
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MCM67C518
Abstract: MCM67C618 MCM72CB32 MCM72CB64 Nippon capacitors
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 256KB and 512KB BurstRAM Secondary Cache Module for Pentium The MCM72CB32SG and MCM72CB64SG are designed to provide a burstable, high performance, 256K/512K L2 cache for the Pentium microprocessor. The modules are configured as 32K x 72 and 64K x 72 bits in a 160 pin card edge
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256KB
512KB
MCM72CB32SG
MCM72CB64SG
256K/512K
MCM67C518
MCM67C618
MCM72CB32
MCM72CB64
MCM72CB64
Nippon capacitors
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PDF
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Untitled
Abstract: No abstract text available
Text: Filter connectors Solder pin straight Socket connector Plug connector 00.6 Kat 1 i A5A Kat 1 i A6A A -0 .7 6 B + 0,25 C D - 0,30 9 31,19 16,79 25,00 +00f 3 6,12 33,30 ‘. qjo 15 39,52 25,12 6,12 38,50 47,04 ’ C13 25 53,42 38,84 33,30 *°0f 0 47,04 i 0 ,3
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15-pol.
26-pol.
44-pol.
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cea 141
Abstract: A5A 103 A5A 101 D4047
Text: 6 4 -b it C a c h e M o d u le A S 7 M 6 4 P Series Features Logic Block Diagram ♦ Pentium -ready 64-bit data path A 3A -A 6A • ♦ High speed: tAA= 10-20 ns ♦ Low Power - AO-3 A 07 -1 9 • A3B-A6B — » 4 0 -3 A 07-19 — * A4-16 A 4-16 CËÂ •
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64-bit
32/64/128K
A4-16
D32-39
256/512/1024KB
D08-15
D16-23
cea 141
A5A 103
A5A 101
D4047
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btb 137
Abstract: No abstract text available
Text: HI High- Performan ce 256/512/1024 KB vie 3.3V SRAM Module AS7M64f*3256 AS7M64P3512 AS7M64P31024 Low Voltage 256/512/1024 KByte Asynchronous Sit AM Module . PIN ARRANGEMENT FEATURES 80 pin dual-readout DIMM - Same pinout for 256/512/1024KB - Same pinout for burst mode 64B3256
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64-bit
AS7M64P3256:
AS7M64P3512:
AS7M64P31024
AS7M64P31024-15)
AS7M64f
AS7M64P3512
AS7M64P31024
256/512/1024KB
64B3256
btb 137
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PDF
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Untitled
Abstract: No abstract text available
Text: High-Performance 256/512/1024 KByte SRAM Module : AS7M64Ï*256 AS7M64P5Ï2 AS7M64PI024 WÊ 256/512/1024 KByte Asynchronous SRAM Module I PIN ARRANGEMENT FEATURES 80-pin dual-readout DIMM - Same pinout for 256/512/1024KB - Burst-mode control signals - No motherboard jumpers required
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AS7M64Ã
AS7M64P5Ã
AS7M64PI024
80-pin
256/512/1024KB
64-bit
AS7M64P256:
AS7M64P512:
AS7M64P1024
AS7M64P1024-15)
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PDF
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nec 2761
Abstract: l021 IP276
Text: PRELIMINARY PRODUCT INFORMATION NEC MOS INTEGRATED CIRCUIT ELECTRON DEVICE _ , u P D 1 6 4 2 1 SOURCE DRIVER FOR 120-OUTPUT TFT-LCD CAPABLE OF ACCOMMODATING UP TO 8 TONES The /JPD16421 is a source driver for TFT-LCD and can accommodate up to 8 tones.
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120-OUTPUT
uPD16421
12-bit
PD16421
M27S25
PD16421
b45752S
/IPD16421
nec 2761
l021
IP276
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PDF
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Untitled
Abstract: No abstract text available
Text: Data Sheet No. PD-9.671A INTERNATIONAL RECTIFIER AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS IRHF7110 IRHF811Q MEGA RAD HARD 100 Volt, 0.60ft, MEGA RAD HARD HEXFET International Rectifier’s MEGA RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability and breakdown
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IRHF7110
IRHF811Q
1x10s
1x106
H-125
IRHF7110,
IRHF8110
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NASA
Abstract: pdm 5001 til 31a 2N7262 IRHF7230 IRHF8230 H139 circuit at mega 32 H142 H149
Text: Data Sheet No. PD-9.672A INTERNATIONAL RECTIFIER Z O R AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS IRHF7S3Q IRHFS230 SN7S68 N-CHANNEL JAN SR 8N7S62 JANSHSN7S6S MEGA RAD HARD 200 Volt, 0.400, MEGA RAD HARD HEXFET International Rectifier’s MEGA RAD HARD Technology HEXFETs
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JANSR8N7S62
IRHF7230
IRHF8230
H-149
IRHF7230,
IRHF8230,
2N7262
H-150
NASA
pdm 5001
til 31a
H139
circuit at mega 32
H142
H149
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6116 SRAM
Abstract: IZ48
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 256KB and 512KB BurstRAM Secondary Cache Module for Pentium™ The M C M 72B F32S G and M C M 72B F64S G are designed to provide a burstable, high perform ance, 256 K /51 2 K L2 cache fo r the Pentium m icroprocessor.
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256KB
512KB
MCM72BF32
MCM72BF64
72BF32
MCM72BF32SG66
MCM72BF64SG66
MCM72BF32SG60
MCM72BF64SG60
6116 SRAM
IZ48
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PDF
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Untitled
Abstract: No abstract text available
Text: M OTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information 256KB and 512KB BurstRAM Secondary Cache Module for Pentium™ The MCM72CF32SG and MCM72CF64SG are designed to provide a burstable, high performance, 256K/512K L2 cache for the Pentium microprocessor.
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256KB
512KB
MCM72CF32SG
MCM72CF64SG
256K/512K
MCM67C518
MCM67C618
MCM72CF64SG66
72CF32
72CF64
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PDF
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512Kx1 DRAM
Abstract: No abstract text available
Text: HY51V4100B Series «HYUNDAI 4M X 1bit CMOS DRAM DESCRIPTION The HY51V4100B is the new generation and fast dynamic RAM organized 4,194,304x1-bit. The HY51V4100B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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HY51V4100B
304x1-bit.
HY51V4100B
Schottk014
27J8S
50flfl
1AC10-10-MAY95
512Kx1 DRAM
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PDF
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gx 6101 d
Abstract: CHE 6100
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 256KB and 512KB BurstRAM Secondary Cache Module for Pentium™ The M C M 72BB32SG and M C M 72BB64SG are designed to provide a burstable, high perform ance, 256 K /51 2 K L2 cache fo r th e Pentium m icroprocessor. The
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256KB
512KB
72BB32SG
72BB64SG
67B618
MCM72BB32
MCM72BB64
MCM72BB64SG66
72BB32
72BB64
gx 6101 d
CHE 6100
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PDF
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C1B4
Abstract: cq51 c17f C01A MC68HC11E2 motorola mc 8602 258 c014 motorola cmos C100 microcontroller application 9704 258 c017
Text: Simple Interface for 68HC11 to MICROWIRE “Chip Security” EEPROMs Application Note 909 •■■■■■■■■■ SEMICONDUCTOR TM BRIEF OVERVIEW OF THE NM93CSxx FEATURES ABSTRACT Fairchild’s NM93 CSxx Family of serial EEPROMs offers sophis ticatedprotection against accidentaloverwrites from power surges,
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68HC11
tocontroltheNM93CSxx
NM93CSxx
C1B4
cq51
c17f
C01A
MC68HC11E2
motorola mc 8602
258 c014
motorola cmos C100 microcontroller
application 9704
258 c017
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PDF
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Untitled
Abstract: No abstract text available
Text: HY514100B Series “H Y U N D A I 4M X 1- b it CMOS DRAM DESCRIPTION The HY514100B is the new generation and fast dynam ic RAM organized 4,194,304 x 1-bit. The HY514100B utilizes Hyundai’s CM OS silicon gate process technology as well as advanced circuit techniques to provide wide
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HY514100B
4L750Ã
000413b
1AC09-10-MA
HY514100BJ
HY514100BLJ
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PDF
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Untitled
Abstract: No abstract text available
Text: HY514100B Series •HYUNDAI 4M X 1-bit CMOS DRAM DESCRIPTION The HY514100B is the new generation and fast dynamic RAM organized 4,194,304 x 1-bit. The HY514100B utilizes Hyundai’s CM OS silicon gate process technology as well as advanced circuit techniques to provide wide
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OCR Scan
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HY514100B
HY514100B
4b750Ã
000413b
1AC09-10-MAY95
HY514100BJ
HY514100BLJ
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PDF
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ICCA100
Abstract: 2CB32
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MCM72CB32 MCM72CB64 256KB and 512KB BurstRAM Secondary Cache Module for Pentium™ T h e M C M 72C B 32S G and M C M 72C B 64S G are designed to provide a burstable, high perform ance, 256 K /51 2 K L2 cache for the Pentium m icroprocessor.
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MCM72CB32
MCM72CB64
256KB
512KB
618FN
72CB64SG66
MCM72CB32SG66
MCM72CB64SG66
MCM72CB32SG80
MCM72CB64SG80
ICCA100
2CB32
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PDF
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