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    TE Connectivity W54-XB1A4A10-20

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    TE Connectivity W57-XB7A4A10-20

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    DigiKey W57-XB7A4A10-20 Tray 7,641 1
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    TE Connectivity W57-XB7A4A10-15

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    Interstate Connecting Components W57-XB7A4A10-15 46
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    TE Connectivity W54-XB1A4A10-30

    CIR BRKR THRM 30A 250VAC
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    Interstate Connecting Components W54-XB1A4A10-30
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    TE Connectivity W57-XB7A4A10-10

    CIR BRKR THRM 10A 250VAC
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    DigiKey W57-XB7A4A10-10 Tray 3,972 1
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    A4A10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    STK14C88

    Abstract: STK15C88 STK16C88 STK16C88-25 STK16C88-35 STK16C88-45
    Text: STK16C88 32K x 8 AutoStorePlus nvSRAM QuantumTrap™ CMOS Nonvolatile Static RAM FEATURES DESCRIPTION • Transparent Data Save on Power Down • Internal Capacitor Guarantees AutoStore™ Regardless of Power-Down Slew Rate • Nonvolatile Storage without Battery Problems


    Original     		PDF STK16C88 200ns 100-Year STK16C88 28-pin STK14C88 STK15C88 STK16C88-25 STK16C88-35 STK16C88-45

    ecg semiconductors master replacement guide

    Abstract: ecg master replacement guide mkl b32110 siemens mkp B32650 c945 p 331 ks transistor IC,MASTER master replacement guide Kennlinie KTY 10-6 siemens b32110 A2005 transistor
    Text: Liebe Schuricht-Kunden, Ihre Zufriedenheit ist unser größtes Anliegen. Aus diesem Grunde versuchen wir, Ihnen Informationen und Ware stets zum richtigen Zeitpunkt verfügbar zu machen. Das gilt insbesondere auch für die Produkte der Siemens AG mit den drei


    Original     		PDF

    STK11C88-3

    Abstract: 303F
    Text: STK11C88-3 32K x 8 nvSRAM 3.3V QuantumTrap CMOS Nonvolatile Static RAM ADVANCE FEATURES DESCRIPTION • Operating VCC Range: 3.0V-3.6V The Simtek STK11C88-3 is a fast static RAM with a nonvolatile, electrically erasable PROM element incorporated in each static memory cell. The SRAM


    Original     		PDF STK11C88-3 STK11C88-3 28-pin 303F

    B17C

    Abstract: 4202 bd datasheet BD 139 N A13B A5l102 A18E 48-7191 A17A 48-2210 AND501
    Text: PIN NUMBER 2161-1 102 PIN LENGTH 19.0/.750 PLATING 102 MATING “M” 11.43/.450 PCB “P” 4.37/.172 GOLD “G” N/A TIN “T” OVERALL PACKAGING PK-41661-001 STATUS A-41661-ANA102-* MATERIAL ENGINEERING VOIDS 26-48-1021 26-48-1031 26-48-1041 26-48-1051


    Original     		PDF PK-41661-001 -41661-ANA102-* -A2A102 -A3A102 -A4A102 -A5A102 -A6A102 -A7A102 -A8A102 -A9A102 B17C 4202 bd datasheet BD 139 N A13B A5l102 A18E 48-7191 A17A 48-2210 AND501

    STK14C88

    Abstract: STK15C88 STK16C88 STK16C88-25 STK16C88-35 STK16C88-45
    Text: STK16C88 32K x 8 AutoStorePlus nvSRAM QuantumTrap™ CMOS Nonvolatile Static RAM FEATURES DESCRIPTION • Transparent Data Save on Power Down • Internal Capacitor Guarantees AutoStore™ Regardless of Power-Down Slew Rate • Directly Replaces 32K x 8 Static RAM, BatteryBacked RAM or EEPROM


    Original     		PDF STK16C88 200ns 100-Year ML0018 STK16C88 Sn/15 28-pin STK14C88 STK15C88 STK16C88-25 STK16C88-35 STK16C88-45

    Untitled

    Abstract: No abstract text available
    Text: STK15C88-3 32K x 8 AutoStore nvSRAM 3.3V QuantumTrap™ CMOS Nonvolatile Static RAM FEATURES DESCRIPTION • Nonvolatile Storage without Battery Problems • Directly Replaces 32K x 8 Static RAM, BatteryBacked RAM or EEPROM • 35ns, 45ns and 55ns Access Times


    Original     		PDF STK15C88-3 200ns 100-Year 28-Pin STK15C88-3

    31C7

    Abstract: 303F STK11C88 0E38
    Text: STK11C88 32K x 8 nvSRAM QuantumTrap CMOS Nonvolatile Static RAM FEATURES DESCRIPTION • 20ns, 25ns, 35ns and 45ns Access Times The Simtek STK11C88 is a fast static RAM with a nonvolatile, electrically erasable PROM element incorporated in each static memory cell. The SRAM


    Original     		PDF STK11C88 STK11C88 28-pin 31C7 303F 0E38

    Untitled

    Abstract: No abstract text available
    Text: V826A64M24SA 64M x 64 HIGH PERFORMANCE UNBUFFERED DDR SDRAM MICRODIMM MODULE Features Description • 172 Pin Unbuffered 67,108,864 x 64 bit Organization DDR MICRODIMM Modules ■ Utilizes High Performance 64M x 8 DDR SDRAM in SOC Packages ■ Single +2.5V ± 0.2V Power Supply


    Original     		PDF V826A64M24SA DDR400

    B17C

    Abstract: A5l102 48-7191 5241 kk A17a A18E AND501 A10E A17E PK-41661-001
    Text: PIN NUMBER 2161-1 102 PIN LENGTH 19.0/.750 PLATING 102 MATING “M” 11.43/.450 PCB “P” 4.37/.172 GOLD “G” N/A TIN “T” OVERALL PACKAGING PK-41661-001 STATUS A-41661-ANA102-* MATERIAL ENGINEERING VOIDS 26-48-1021 26-48-1031 26-48-1041 26-48-1051


    Original     		PDF PK-41661-001 -41661-ANA102-* -A2A102 -A3A102 -A4A102 -A5A102 -A6A102 -A7A102 -A8A102 -A9A102 B17C A5l102 48-7191 5241 kk A17a A18E AND501 A10E A17E PK-41661-001

    STK14C88-3

    Abstract: STK16C88-3 30-3F
    Text: STK16C88-3 32K x 8 AutoStorePlus nvSRAM 3.3V QuantumTrap™ CMOS Nonvolatile Static RAM Preliminary FEATURES DESCRIPTION • Transparent Data Save on Power Down • Internal Capacitor Guarantees AutoStore™ Regardless of Power-Down Slew Rate • Directly Replaces 32K x 8 Static RAM, BatteryBacked RAM or EEPROM


    Original     		PDF STK16C88-3 200ns 100-Year ML0019 STK16C88-3 Sn/15 28-pin STK14C88-3 30-3F

    303F

    Abstract: STK11C88
    Text: STK11C88 32K x 8 nvSRAM QuantumTrap CMOS Nonvolatile Static RAM FEATURES DESCRIPTION • 25ns, 35ns and 45ns Access Times The Simtek STK11C88 is a fast static RAM with a nonvolatile element incorporated in each static memory cell. The SRAM can be read and written an


    Original     		PDF STK11C88 STK11C88 ML0012 Sn/15 28-pin 303F

    Untitled

    Abstract: No abstract text available
    Text: STK15C88 32K x 8 AutoStore nvSRAM QuantumTrap™ CMOS Nonvolatile Static RAM FEATURES DESCRIPTION • Nonvolatile Storage without Battery Problems • Directly Replaces 32K x 8 Static RAM, BatteryBacked RAM or EEPROM • 25ns and 45ns Access Times • STORE to nonvolatile elements Initiated by


    Original     		PDF STK15C88 200ns 100-Year 28-Pin STK15C88 ML0016

    Untitled

    Abstract: No abstract text available
    Text: STK16C88 32K x 8 AutoStorePlus nvSRAM QuantumTrap™ CMOS Nonvolatile Static RAM FEATURES DESCRIPTION • Transparent Data Save on Power Down • Internal Capacitor Guarantees AutoStore™ Regardless of Power-Down Slew Rate • Directly Replaces 32K x 8 Static RAM, BatteryBacked RAM or EEPROM


    Original     		PDF STK16C88 200ns 100-Year 28-Pin ML0018 STK16C88

    303F

    Abstract: STK11C88-3
    Text: STK11C88-3 32K x 8 nvSRAM 3.3V QuantumTrap CMOS Nonvolatile Static RAM Obsolete - Not Recommend for new Deisgns FEATURES DESCRIPTION • 35, 45ns and 55ns Access Times The Simtek STK11C88-3 is a fast static RAM with a nonvolatile element incorporated in each static


    Original     		PDF STK11C88-3 STK11C88-3 Sn/15 28-pin ML0013 303F

    303F

    Abstract: STK11C88-3
    Text: STK11C88-3 32K x 8 nvSRAM 3.3V QuantumTrap CMOS Nonvolatile Static RAM Preliminary FEATURES DESCRIPTION • 35, 45ns and 55ns Access Times The Simtek STK11C88-3 is a fast static RAM with a nonvolatile element incorporated in each static memory cell. The SRAM can be read and written an


    Original     		PDF STK11C88-3 STK11C88-3 ML0013 Sn/15 28-pin 303F

    303F

    Abstract: STK11C88-3 0C63
    Text: STK11C88-3 32K x 8 nvSRAM 3.3V QuantumTrap CMOS Nonvolatile Static RAM Preliminary FEATURES DESCRIPTION • Operating VCC Range: 2.7V-3.6V The Simtek STK11C88-3 is a fast static RAM with a nonvolatile, electrically erasable PROM element incorporated in each static memory cell. The SRAM


    Original     		PDF STK11C88-3 STK11C88-3 28-pin 303F 0C63

    Untitled

    Abstract: No abstract text available
    Text: STK11C88 32K x 8 nvSRAM QuantumTrap CMOS Nonvolatile Static RAM FEATURES DESCRIPTION • 25ns and 45ns Access Times The Simtek STK11C88 is a fast static RAM with a nonvolatile element incorporated in each static memory cell. The SRAM can be read and written an


    Original     		PDF STK11C88 200ns 100-Year STK11C88 ML0012 28-pin

    Untitled

    Abstract: No abstract text available
    Text: STK11C88-3 32K x 8 nvSRAM 3.3V QuantumTrap CMOS Nonvolatile Static RAM Preliminary FEATURES DESCRIPTION • 35, 45ns and 55ns Access Times The Simtek STK11C88-3 is a fast static RAM with a nonvolatile element incorporated in each static memory cell. The SRAM can be read and written an


    Original     		PDF STK11C88-3 100-Year 28-Pin STK11C88-3 ML0013

    Untitled

    Abstract: No abstract text available
    Text: STK16C88-3 32K x 8 AutoStorePlus nvSRAM 3.3V QuantumTrap™ CMOS Nonvolatile Static RAM Preliminary FEATURES DESCRIPTION • Transparent Data Save on Power Down • Internal Capacitor Guarantees AutoStore™ Regardless of Power-Down Slew Rate • Directly Replaces 32K x 8 Static RAM, BatteryBacked RAM or EEPROM


    Original     		PDF STK16C88-3 200ns 100-Year ML0019 STK16C88-3 28-pin

    non volitile sram

    Abstract: d0027
    Text: XL28C16B Excellence itt F : 2K X 8 C M O S Electrically Erasable PROM PIN CONFIGURATION FEATURES • Fast Read Access Times — 100ns, 150ns, 200ns, 250ns • • 24 pin PDIP Type "P” Package 16 Byte Page Mode Low CMOS Power Consumption — 30mA active max.


    OCR Scan     		PDF XL28C16B 100ns, 150ns, 200ns, 250ns 120ns D0027 non volitile sram

    i50Ns

    Abstract: No abstract text available
    Text: 128K x 8 UV EPROM Monolithic MUM8128W-17/20/25 m o la te Issue 2.1 : March 1989 PRELIMINARY r sen.iconduc.T 3W 2 Inc. x 8 CMOS High Speed UV EPROM Pin Definitions Features A15 Access Times of 170/200/250 ns Vpp Program Voltage 12.5V JEDEC 32 pad LCC Footprint and Pin-out


    OCR Scan     		PDF MIL-STD-883C 1024x1024 MA10A11 UM8128W-17/20/25 STi66fB~ i50Ns

    XLS28C16b

    Abstract: XLE28C16B
    Text: XL28C16B 2K X 8 CM OS Electrically Erasable PROM FEATURES PIN CONFIGURATION 24 Pin PDIP Type "P" Package • 5 V o lt-o n ly O peration ■ In d u stria l Tem perature Range A vailable XLE28C16B 1 24 ] Vcc A? [ 1 24 Ae [ 2 23 ] a 8 Aa [ 2 23 ] A b As [ 3


    OCR Scan     		PDF XL28C16B 100ns, 150ns, 200ns, 250ns XLE28C16B) 120ns XLS28C16b XLE28C16B

    XL28C16B

    Abstract: No abstract text available
    Text: XL28C16B 2K X 8 CMOS Electrically Erasable PROM FEATURES PIN CONFIGURATION Small Outline Type “J“ Package A7 [ • Industrial Temperature Range Available XLE28C16B 24 ] V c c 23 ] a 8 A6 [ 2 23 ] A . 3 22 ] Ap As [ A4 [ 4 21 ] WE A4[ 4 22 ] A . 21 ] WE


    OCR Scan     		PDF XL28C16B 100ns, 150ns, 200ns, 250ns XLE28C16B) 120ns XL28C16B

    NMS64X8

    Abstract: No abstract text available
    Text: ADVANCE INFORMATION NMS64X8LV 8k x 8 High Speed CMOS SRAM 3.3V with Low Operating Voltage Features • Automatic power-down when de-selected ■ Completely static memory; no clocks or timing strobe required ■ Equal access and cycle times ■ JEDEC pin compatible


    OCR Scan     		PDF NMS64X8LV NMS64X8LV 28-pin A4A10 NMS64X8LV-15 NMS64X8LV-20 NMS64X8LV-25 NMS64X8LV-3S NMS64X8