OPA2662
Abstract: operational amplifier discrete schematic BUF601 data sheet 74hc237 2N3906 74HC237 OPA2662AP OPA2662AU SOL16 package crt 08 3m
Text: OP OPA2662 A26 62 OP A26 62 Dual, Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER FEATURES DESCRIPTION ● 370MHz BANDWIDTH ● 58mA/ns SLEW RATE The OPA2662 is a versatile driver device for ultra wide-bandwidth systems, including high-resolution video, RF and IF circuitry, communications and test
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OPA2662
370MHz
58mA/ns
OPA2662
16-pin
SOL-16
250MHz
400Mbit/s
operational amplifier discrete schematic
BUF601
data sheet 74hc237
2N3906
74HC237
OPA2662AP
OPA2662AU
SOL16 package
crt 08 3m
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Untitled
Abstract: No abstract text available
Text: A26/SMA26 Cascadable Amplifier 10 to 1500 MHz Rev. V5 Features Product Image • HIGH GAIN - TWO STAGES: 20.5 dB TYP. • HIGH OUTPUT LEVEL: +15 dBm (TYP.) • LOW VSWR: <1.4:1 (TYP.) Description The A26 RF amplifier is a discrete hybrid design, which uses
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A26/SMA26
MIL-STD-883
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OPA2662
Abstract: BUF601 2N3906 74HC237 OPA2662AP OPA2662AU OPA602 ota amplifier
Text: OP A26 62 OPA2662 OP A26 62 Wide-Bandwidth, Dual Power OPERATIONAL TRANSCONDUCTANCE AMPLIFIER FEATURES DESCRIPTION ● 370MHz BANDWIDTH ● 58mA/ns SLEW RATE The OPA2662 is a versatile driver device for ultra wide-bandwidth systems, including high-resolution
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OPA2662
370MHz
58mA/ns
OPA2662
16-pin
250MHz
400Mbit/s
BUF601
2N3906
74HC237
OPA2662AP
OPA2662AU
OPA602
ota amplifier
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PDF
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SMA26
Abstract: CA26
Text: Cascadable Amplifier 10 to 1500 MHz A26 / SMA26 V4 Features Product Image • HIGH GAIN - TWO STAGES: 20.5 dB TYP. • HIGH OUTPUT LEVEL: +15 dBm (TYP.) • LOW VSWR: <1.4:1 (TYP.) Description The A26 RF amplifier is a discrete hybrid design, which uses
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SMA26
MIL-STD-883
SMA26
CA26
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OPA2662
Abstract: BUF601 OPA2662AP OPA2662AU 74HC237 sbos011
Text: OP OPA2662 A26 62 OP A26 62 Dual, Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER FEATURES DESCRIPTION ● 370MHz BANDWIDTH ● 58mA/ns SLEW RATE The OPA2662 is a versatile driver device for ultra wide-bandwidth systems, including high-resolution video, RF and IF circuitry, communications and test
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Original
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OPA2662
370MHz
58mA/ns
OPA2662
16-pin
SOL-16
250MHz
BUF601
OPA2662AP
OPA2662AU
74HC237
sbos011
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PDF
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142EN1
Abstract: RQ-70 diode E-2106 OPA2662 BUF601
Text: OP OPA2662 A26 62 OP A26 62 Dual, Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER FEATURES DESCRIPTION ● 370MHz BANDWIDTH ● 58mA/ns SLEW RATE The OPA2662 is a versatile driver device for ultra wide-bandwidth systems, including high-resolution video, RF and IF circuitry, communications and test
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OPA2662
370MHz
58mA/ns
400Mbit/s
OPA2662
16-pin
SOL-16
142EN1
RQ-70 diode
E-2106
BUF601
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PDF
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OPA2662
Abstract: 07-VN BUF601 operational amplifier discrete schematic 74HC237 OPA2662AP OPA2662AU UA610
Text: OP OPA2662 A26 62 OP A26 62 Dual, Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER FEATURES DESCRIPTION ● 370MHz BANDWIDTH ● 58mA/ns SLEW RATE The OPA2662 is a versatile driver device for ultra wide-bandwidth systems, including high-resolution video, RF and IF circuitry, communications and test
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Original
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OPA2662
370MHz
58mA/ns
OPA2662
16-pin
SOL-16
250MHz
07-VN
BUF601
operational amplifier discrete schematic
74HC237
OPA2662AP
OPA2662AU
UA610
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PDF
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a26 transistor
Abstract: 15002 SMA26 CA26
Text: A26/SMA26 Cascadable Amplifier 10 to 1500 MHz Rev. V5 Features Product Image • HIGH GAIN - TWO STAGES: 20.5 dB TYP. • HIGH OUTPUT LEVEL: +15 dBm (TYP.) • LOW VSWR: <1.4:1 (TYP.) Description The A26 RF amplifier is a discrete hybrid design, which uses
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A26/SMA26
MIL-STD-883
SMA26
a26 transistor
15002
CA26
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PDF
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SMA26
Abstract: CA26
Text: A26/SMA26 10 TO 1500 MHz CASCADABLE AMPLIFIER • HIGH GAIN - TWO STAGES: 20.5 dB TYP. · HIGH OUTPUT LEVEL: +15 dBm (TYP.) · LOW VSWR: <1.4:1 (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 11/00)* Characteristics Typical Frequency Small Signal Gain (min.)
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A26/SMA26
SMA26
SMA26
CA26
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PDF
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Untitled
Abstract: No abstract text available
Text: A26/SMA26 10 TO 1500 MHz CASCADABLE AMPLIFIER • HIGH GAIN - TWO STAGES: 20.5 dB TYP. · HIGH OUTPUT LEVEL: +15 dBm (TYP.) · LOW VSWR: <1.4:1 (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 11/00)* Characteristics Typical Frequency Small Signal Gain (min.)
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A26/SMA26
SMA26
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ci 4093
Abstract: K9S1208
Text: K9D1G08V0M/A-SSB0 K9S1208V0M/A-SSB0 SmartMediaTM Document Title 64MB & 128MB SmartMediaTM Card Revision History Revision No History Draft Date Remark 0.0 Initial issue Mar. 30th 2001 Preliminary 0.1 1. Changed DC characteristics Apr. 7th 2001 Min Typ Max Sequential Read
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K9D1G08V0M/A-SSB0
K9S1208V0M/A-SSB0
128MB
ci 4093
K9S1208
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ATO Solution nand flash
Abstract: K9D1G08V0M-SSB0 K9S1208V0M-SSB0 K9D1G08V0M
Text: K9D1G08V0M-SSB0 K9S1208V0M-SSB0 SmartMediaTM Document Title 64MB & 128MB SmartMediaTM Card Revision History Revision No History Draft Date Remark 0.0 Initial issue Mar. 30th 2001 Preliminary 0.1 1. Changed DC characteristics Apr. 7th 2001 Parameter Operating
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K9D1G08V0M-SSB0
K9S1208V0M-SSB0
128MB
ATO Solution nand flash
K9D1G08V0M-SSB0
K9S1208V0M-SSB0
K9D1G08V0M
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary FLASH MEMORY K9T1G08U0M Document Title 128M x 8 Bits NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Aug. 7th 2003 Advanced 0.1 tR is changed. [Old : 12µs Max. , New :15µs(Max.)] Oct. 20th 2003 Preliminary
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K9T1G08U0M
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PDF
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K9T1G08U0M
Abstract: K9T1G08U0M-V K9T1G08U0M-Y SAMSUNG 256Mb NAND Flash Qualification Reliability
Text: FLASH MEMORY K9T1G08U0M Document Title 128M x 8 Bits NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Aug. 7th 2003 Advanced 0.1 tR is changed. [Old : 12µs Max. , New :15µs(Max.)] Oct. 20th 2003 Preliminary 0.2
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K9T1G08U0M
K9T1G08U0M
K9T1G08U0M-V
K9T1G08U0M-Y
SAMSUNG 256Mb NAND Flash Qualification Reliability
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K9T1G08U0M-YCB0
Abstract: K9T1G08U0M K9T1G08U0M-V K9T1G08U0M-VCB0 K9T1G08U0M-Y
Text: K9T1G08U0M-YCB0,YIB0,PCB0,PIB0 K9T1G08U0M-VCB0,VIB0,FCB0,FIB0 FLASH MEMORY Document Title 128M x 8 Bits NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Aug. 7th 2003 Advanced 0.1 tR is changed. [Old : 12µs Max. , New :15µs(Max.)]
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K9T1G08U0M-YCB0
K9T1G08U0M-VCB0
K9T1G08U0M
K9T1G08U0M-V
K9T1G08U0M-Y
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TwB 75
Abstract: SAMSUNG 256Mb NAND Flash Qualification Reliability K9T1G08U0M K9T1G08U0M-V K9T1G08U0M-Y Samsung Flash
Text: Preliminary FLASH MEMORY K9T1G08U0M Document Title 128M x 8 Bits NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Aug. 7th 2003 Advanced 0.1 tR is changed. [Old : 12µs Max. , New :15µs(Max.)] Oct. 20th 2003 Preliminary
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K9T1G08U0M
TwB 75
SAMSUNG 256Mb NAND Flash Qualification Reliability
K9T1G08U0M
K9T1G08U0M-V
K9T1G08U0M-Y
Samsung Flash
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K9T1G08U0M-V
Abstract: K9T1G08U0M-VCB0 K9T1G08U0M-Y K9T1G08U0M-YCB0
Text: K9T1G08U0M-YCB0,YIB0,PCB0,PIB0 K9T1G08U0M-VCB0,VIB0,FCB0,FIB0 FLASH MEMORY Document Title 128M x 8 Bits NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Aug. 7th 2003 Advanced 0.1 tR is changed. [Old : 12µs Max. , New :15µs(Max.)]
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K9T1G08U0M-YCB0
K9T1G08U0M-VCB0
K9T1G08U0M-V
K9T1G08U0M-Y
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K9K1G08U0M-YCB0
Abstract: IC 4093 K9K1G08U0M K9K1G08U0M-YIB0
Text: FLASH MEMORY K9K1G08U0M Document Title 128M x 8 Bit NAND Flash Memory Revision History History Draft Date 0.0 0.1 1. Initial issue 1.[Page 31] device code 76h -> device code (79h) Apr. 7th 2001 Jul. 3rd 2001 0.2 1.Powerup sequence is added : Recovery time of minimum 1µs is required before internal circuit gets
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K9K1G08U0M
Page28]
48-Pin
1220F
047MAX
K9K1G08U0M-YCB0
IC 4093
K9K1G08U0M
K9K1G08U0M-YIB0
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a1-a10
Abstract: No abstract text available
Text: K9K1G08U0M-YCB0, K9K1G08U0M-YIB0 FLASH MEMORY Document Title 128M x 8 Bit NAND Flash Memory Revision History History Draft Date 0.0 0.1 1. Initial issue 1.[Page 31] device code 76h -> device code (79h) Apr. 7th 2001 Jul. 3rd 2001 0.2 1.Powerup sequence is added
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K9K1G08U0M-YCB0,
K9K1G08U0M-YIB0
Page28]
48-Pin
1220F
047MAX
a1-a10
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PDF
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Untitled
Abstract: No abstract text available
Text: K9K1G08U0M-YCB0, K9K1G08U0M-YIB0 FLASH MEMORY Document Title 128M x 8 Bit NAND Flash Memory Revision History History Draft Date 0.0 0.1 1. Initial issue 1.[Page 31] device code 76h -> device code (79h) Apr. 7th 2001 Jul. 3rd 2001 0.2 1.Powerup sequence is added
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K9K1G08U0M-YCB0,
K9K1G08U0M-YIB0
Page28]
48-Pin
1220F
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PDF
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Untitled
Abstract: No abstract text available
Text: K9K1G08U0M-YCB0, K9K1G08U0M-YIB0 FLASH MEMORY Document Title 128M x 8 Bit NAND Flash Memory Revision History History Draft Date 0.0 0.1 1. Initial issue 1.[Page 31] device code 76h -> device code (79h) Apr. 7th 2001 Jul. 3rd 2001 0.2 1.Powerup sequence is added
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K9K1G08U0M-YCB0,
K9K1G08U0M-YIB0
Page28]
48-Pin
1220F
047MAX
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PDF
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WJ-A26
Abstract: No abstract text available
Text: WJ-A26 / SMA26 10 to 1500 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH GAIN -TWO STAGES: 20.5 dB TYP. HIGH OUTPUT LEVEL: +15 dBm (TYP.) LOW VSWR: < 1.4:1 (TYP.) Outline Drawings A26 0.200 (5-08) Specifications51 Guaranteed
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OCR Scan
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WJ-A26
SMA26
50-ohm
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WJ-A26
Abstract: transistor bc 207 WJ-CA26 m 9669 transistor Bc 287 WJA26
Text: u j U A26/SMA26 10 to 1500 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH GAIN -TWO STAGES: 20.5 dB TYP. HIGH OUTPUT LEVEL: +15 dBm (TYP.) LOW VSWR: <1.4:1 (TYP.) Outline Drawings A26 Specifications* Characteristics Frequency (Min.)
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OCR Scan
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A26/SMA26
1-800-WJ1-4401
WJ-A26
transistor bc 207
WJ-CA26
m 9669
transistor Bc 287
WJA26
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PDF
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mpsa25
Abstract: No abstract text available
Text: MPSA27 CASE 29-04, STYLE 1 TO-92 TO-226AA MAXIMUM RATINGS Rating Symbol MPS-A25 MPS-A26 MPS-A27 C cllector-E m itter Voltage VCES Em itter-Base Voltage v EBO 40 50 60 Unit Vdc 10 Vdc Collector C urrent — C ontinuous >C 500 m A dc Total Device D issipation
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OCR Scan
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MPSA27
O-226AA)
MPS-A25
MPS-A26
MPS-A27
mpsa25
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PDF
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