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    A26 TRANSISTOR Search Results

    A26 TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    A26 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    OPA2662

    Abstract: operational amplifier discrete schematic BUF601 data sheet 74hc237 2N3906 74HC237 OPA2662AP OPA2662AU SOL16 package crt 08 3m
    Text: OP OPA2662 A26 62 OP A26 62 Dual, Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER FEATURES DESCRIPTION ● 370MHz BANDWIDTH ● 58mA/ns SLEW RATE The OPA2662 is a versatile driver device for ultra wide-bandwidth systems, including high-resolution video, RF and IF circuitry, communications and test


    Original     		PDF OPA2662 370MHz 58mA/ns OPA2662 16-pin SOL-16 250MHz 400Mbit/s operational amplifier discrete schematic BUF601 data sheet 74hc237 2N3906 74HC237 OPA2662AP OPA2662AU SOL16 package crt 08 3m

    Untitled

    Abstract: No abstract text available
    Text: A26/SMA26 Cascadable Amplifier 10 to 1500 MHz Rev. V5 Features Product Image • HIGH GAIN - TWO STAGES: 20.5 dB TYP. • HIGH OUTPUT LEVEL: +15 dBm (TYP.) • LOW VSWR: <1.4:1 (TYP.) Description The A26 RF amplifier is a discrete hybrid design, which uses


    Original     		PDF A26/SMA26 MIL-STD-883

    OPA2662

    Abstract: BUF601 2N3906 74HC237 OPA2662AP OPA2662AU OPA602 ota amplifier
    Text: OP A26 62 OPA2662 OP A26 62 Wide-Bandwidth, Dual Power OPERATIONAL TRANSCONDUCTANCE AMPLIFIER FEATURES DESCRIPTION ● 370MHz BANDWIDTH ● 58mA/ns SLEW RATE The OPA2662 is a versatile driver device for ultra wide-bandwidth systems, including high-resolution


    Original     		PDF OPA2662 370MHz 58mA/ns OPA2662 16-pin 250MHz 400Mbit/s BUF601 2N3906 74HC237 OPA2662AP OPA2662AU OPA602 ota amplifier

    SMA26

    Abstract: CA26
    Text: Cascadable Amplifier 10 to 1500 MHz A26 / SMA26 V4 Features Product Image • HIGH GAIN - TWO STAGES: 20.5 dB TYP. • HIGH OUTPUT LEVEL: +15 dBm (TYP.) • LOW VSWR: <1.4:1 (TYP.) Description The A26 RF amplifier is a discrete hybrid design, which uses


    Original     		PDF SMA26 MIL-STD-883 SMA26 CA26

    OPA2662

    Abstract: BUF601 OPA2662AP OPA2662AU 74HC237 sbos011
    Text: OP OPA2662 A26 62 OP A26 62 Dual, Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER FEATURES DESCRIPTION ● 370MHz BANDWIDTH ● 58mA/ns SLEW RATE The OPA2662 is a versatile driver device for ultra wide-bandwidth systems, including high-resolution video, RF and IF circuitry, communications and test


    Original     		PDF OPA2662 370MHz 58mA/ns OPA2662 16-pin SOL-16 250MHz BUF601 OPA2662AP OPA2662AU 74HC237 sbos011

    142EN1

    Abstract: RQ-70 diode E-2106 OPA2662 BUF601
    Text: OP OPA2662 A26 62 OP A26 62 Dual, Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER FEATURES DESCRIPTION ● 370MHz BANDWIDTH ● 58mA/ns SLEW RATE The OPA2662 is a versatile driver device for ultra wide-bandwidth systems, including high-resolution video, RF and IF circuitry, communications and test


    Original     		PDF OPA2662 370MHz 58mA/ns 400Mbit/s OPA2662 16-pin SOL-16 142EN1 RQ-70 diode E-2106 BUF601

    OPA2662

    Abstract: 07-VN BUF601 operational amplifier discrete schematic 74HC237 OPA2662AP OPA2662AU UA610
    Text: OP OPA2662 A26 62 OP A26 62 Dual, Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER FEATURES DESCRIPTION ● 370MHz BANDWIDTH ● 58mA/ns SLEW RATE The OPA2662 is a versatile driver device for ultra wide-bandwidth systems, including high-resolution video, RF and IF circuitry, communications and test


    Original     		PDF OPA2662 370MHz 58mA/ns OPA2662 16-pin SOL-16 250MHz 07-VN BUF601 operational amplifier discrete schematic 74HC237 OPA2662AP OPA2662AU UA610

    a26 transistor

    Abstract: 15002 SMA26 CA26
    Text: A26/SMA26 Cascadable Amplifier 10 to 1500 MHz Rev. V5 Features Product Image • HIGH GAIN - TWO STAGES: 20.5 dB TYP. • HIGH OUTPUT LEVEL: +15 dBm (TYP.) • LOW VSWR: <1.4:1 (TYP.) Description The A26 RF amplifier is a discrete hybrid design, which uses


    Original     		PDF A26/SMA26 MIL-STD-883 SMA26 a26 transistor 15002 CA26

    SMA26

    Abstract: CA26
    Text: A26/SMA26 10 TO 1500 MHz CASCADABLE AMPLIFIER • HIGH GAIN - TWO STAGES: 20.5 dB TYP. · HIGH OUTPUT LEVEL: +15 dBm (TYP.) · LOW VSWR: <1.4:1 (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 11/00)* Characteristics Typical Frequency Small Signal Gain (min.)


    Original     		PDF A26/SMA26 SMA26 SMA26 CA26

    Untitled

    Abstract: No abstract text available
    Text: A26/SMA26 10 TO 1500 MHz CASCADABLE AMPLIFIER • HIGH GAIN - TWO STAGES: 20.5 dB TYP. · HIGH OUTPUT LEVEL: +15 dBm (TYP.) · LOW VSWR: <1.4:1 (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 11/00)* Characteristics Typical Frequency Small Signal Gain (min.)


    Original     		PDF A26/SMA26 SMA26

    ci 4093

    Abstract: K9S1208
    Text: K9D1G08V0M/A-SSB0 K9S1208V0M/A-SSB0 SmartMediaTM Document Title 64MB & 128MB SmartMediaTM Card Revision History Revision No History Draft Date Remark 0.0 Initial issue Mar. 30th 2001 Preliminary 0.1 1. Changed DC characteristics Apr. 7th 2001 Min Typ Max Sequential Read


    Original     		PDF K9D1G08V0M/A-SSB0 K9S1208V0M/A-SSB0 128MB ci 4093 K9S1208

    ATO Solution nand flash

    Abstract: K9D1G08V0M-SSB0 K9S1208V0M-SSB0 K9D1G08V0M
    Text: K9D1G08V0M-SSB0 K9S1208V0M-SSB0 SmartMediaTM Document Title 64MB & 128MB SmartMediaTM Card Revision History Revision No History Draft Date Remark 0.0 Initial issue Mar. 30th 2001 Preliminary 0.1 1. Changed DC characteristics Apr. 7th 2001 Parameter Operating


    Original     		PDF K9D1G08V0M-SSB0 K9S1208V0M-SSB0 128MB ATO Solution nand flash K9D1G08V0M-SSB0 K9S1208V0M-SSB0 K9D1G08V0M

    Untitled

    Abstract: No abstract text available
    Text: Preliminary FLASH MEMORY K9T1G08U0M Document Title 128M x 8 Bits NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Aug. 7th 2003 Advanced 0.1 tR is changed. [Old : 12µs Max. , New :15µs(Max.)] Oct. 20th 2003 Preliminary


    Original     		PDF K9T1G08U0M

    K9T1G08U0M

    Abstract: K9T1G08U0M-V K9T1G08U0M-Y SAMSUNG 256Mb NAND Flash Qualification Reliability
    Text: FLASH MEMORY K9T1G08U0M Document Title 128M x 8 Bits NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Aug. 7th 2003 Advanced 0.1 tR is changed. [Old : 12µs Max. , New :15µs(Max.)] Oct. 20th 2003 Preliminary 0.2


    Original     		PDF K9T1G08U0M K9T1G08U0M K9T1G08U0M-V K9T1G08U0M-Y SAMSUNG 256Mb NAND Flash Qualification Reliability

    K9T1G08U0M-YCB0

    Abstract: K9T1G08U0M K9T1G08U0M-V K9T1G08U0M-VCB0 K9T1G08U0M-Y
    Text: K9T1G08U0M-YCB0,YIB0,PCB0,PIB0 K9T1G08U0M-VCB0,VIB0,FCB0,FIB0 FLASH MEMORY Document Title 128M x 8 Bits NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Aug. 7th 2003 Advanced 0.1 tR is changed. [Old : 12µs Max. , New :15µs(Max.)]


    Original     		PDF K9T1G08U0M-YCB0 K9T1G08U0M-VCB0 K9T1G08U0M K9T1G08U0M-V K9T1G08U0M-Y

    TwB 75

    Abstract: SAMSUNG 256Mb NAND Flash Qualification Reliability K9T1G08U0M K9T1G08U0M-V K9T1G08U0M-Y Samsung Flash
    Text: Preliminary FLASH MEMORY K9T1G08U0M Document Title 128M x 8 Bits NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Aug. 7th 2003 Advanced 0.1 tR is changed. [Old : 12µs Max. , New :15µs(Max.)] Oct. 20th 2003 Preliminary


    Original     		PDF K9T1G08U0M TwB 75 SAMSUNG 256Mb NAND Flash Qualification Reliability K9T1G08U0M K9T1G08U0M-V K9T1G08U0M-Y Samsung Flash

    K9T1G08U0M-V

    Abstract: K9T1G08U0M-VCB0 K9T1G08U0M-Y K9T1G08U0M-YCB0
    Text: K9T1G08U0M-YCB0,YIB0,PCB0,PIB0 K9T1G08U0M-VCB0,VIB0,FCB0,FIB0 FLASH MEMORY Document Title 128M x 8 Bits NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Aug. 7th 2003 Advanced 0.1 tR is changed. [Old : 12µs Max. , New :15µs(Max.)]


    Original     		PDF K9T1G08U0M-YCB0 K9T1G08U0M-VCB0 K9T1G08U0M-V K9T1G08U0M-Y

    K9K1G08U0M-YCB0

    Abstract: IC 4093 K9K1G08U0M K9K1G08U0M-YIB0
    Text: FLASH MEMORY K9K1G08U0M Document Title 128M x 8 Bit NAND Flash Memory Revision History History Draft Date 0.0 0.1 1. Initial issue 1.[Page 31] device code 76h -> device code (79h) Apr. 7th 2001 Jul. 3rd 2001 0.2 1.Powerup sequence is added : Recovery time of minimum 1µs is required before internal circuit gets


    Original     		PDF K9K1G08U0M Page28] 48-Pin 1220F 047MAX K9K1G08U0M-YCB0 IC 4093 K9K1G08U0M K9K1G08U0M-YIB0

    a1-a10

    Abstract: No abstract text available
    Text: K9K1G08U0M-YCB0, K9K1G08U0M-YIB0 FLASH MEMORY Document Title 128M x 8 Bit NAND Flash Memory Revision History History Draft Date 0.0 0.1 1. Initial issue 1.[Page 31] device code 76h -> device code (79h) Apr. 7th 2001 Jul. 3rd 2001 0.2 1.Powerup sequence is added


    Original     		PDF K9K1G08U0M-YCB0, K9K1G08U0M-YIB0 Page28] 48-Pin 1220F 047MAX a1-a10

    Untitled

    Abstract: No abstract text available
    Text: K9K1G08U0M-YCB0, K9K1G08U0M-YIB0 FLASH MEMORY Document Title 128M x 8 Bit NAND Flash Memory Revision History History Draft Date 0.0 0.1 1. Initial issue 1.[Page 31] device code 76h -> device code (79h) Apr. 7th 2001 Jul. 3rd 2001 0.2 1.Powerup sequence is added


    Original     		PDF K9K1G08U0M-YCB0, K9K1G08U0M-YIB0 Page28] 48-Pin 1220F

    Untitled

    Abstract: No abstract text available
    Text: K9K1G08U0M-YCB0, K9K1G08U0M-YIB0 FLASH MEMORY Document Title 128M x 8 Bit NAND Flash Memory Revision History History Draft Date 0.0 0.1 1. Initial issue 1.[Page 31] device code 76h -> device code (79h) Apr. 7th 2001 Jul. 3rd 2001 0.2 1.Powerup sequence is added


    Original     		PDF K9K1G08U0M-YCB0, K9K1G08U0M-YIB0 Page28] 48-Pin 1220F 047MAX

    WJ-A26

    Abstract: No abstract text available
    Text: WJ-A26 / SMA26 10 to 1500 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH GAIN -TWO STAGES: 20.5 dB TYP. HIGH OUTPUT LEVEL: +15 dBm (TYP.) LOW VSWR: < 1.4:1 (TYP.) Outline Drawings A26 0.200 (5-08) Specifications51 Guaranteed


    OCR Scan     		PDF WJ-A26 SMA26 50-ohm

    WJ-A26

    Abstract: transistor bc 207 WJ-CA26 m 9669 transistor Bc 287 WJA26
    Text: u j U A26/SMA26 10 to 1500 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH GAIN -TWO STAGES: 20.5 dB TYP. HIGH OUTPUT LEVEL: +15 dBm (TYP.) LOW VSWR: <1.4:1 (TYP.) Outline Drawings A26 Specifications* Characteristics Frequency (Min.)


    OCR Scan     		PDF A26/SMA26 1-800-WJ1-4401 WJ-A26 transistor bc 207 WJ-CA26 m 9669 transistor Bc 287 WJA26

    mpsa25

    Abstract: No abstract text available
    Text: MPSA27 CASE 29-04, STYLE 1 TO-92 TO-226AA MAXIMUM RATINGS Rating Symbol MPS-A25 MPS-A26 MPS-A27 C cllector-E m itter Voltage VCES Em itter-Base Voltage v EBO 40 50 60 Unit Vdc 10 Vdc Collector C urrent — C ontinuous >C 500 m A dc Total Device D issipation


    OCR Scan     		PDF MPSA27 O-226AA) MPS-A25 MPS-A26 MPS-A27 mpsa25