SN95PB5
Abstract: 302S43 101 Ceramic Disc Capacitors
Text: Sn-Pb Surface Mount Ceramic Capacitors JOHANSON DIELECTRICS - SYLMAR CALIFORNIA Johanson Dielectrics Incorporated JDI is located in California’s San Fernando Valley and has over 30 years experience supplying high quality ceramic chip capacitors to customers around the
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JD0612-SnPb
SN95PB5
302S43
101 Ceramic Disc Capacitors
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2GB2
Abstract: No abstract text available
Text: White Electronic Designs W3EG64255S-JD3 ADVANCED* 2GB-256Mx64 DDR SDRAM REGISTERED, w/PLL FEATURES DESCRIPTION Double-data-rate architecture The W3EG64255S is a 256Mx64 Double Data Rate SDRAM memory module based on 512Mb DDR SDRAM component. The module consists of sixteen 256Mx4
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W3EG64255S-JD3
2GB-256Mx64
DDR200,
DDR266
DDR333;
W3EG64255S
256Mx64
256Mx64,
2GB2
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Untitled
Abstract: No abstract text available
Text: White Electronic Designs W3EG7235S-JD3 PRELIMINARY* 256MB - 32Mx72 DDR SDRAM REGISTERED ECC, w/PLL FEATURES Double-data-rate architecture Speeds of 100MHz and 133MHz Bi-directional data strobes DQS Differential clock inputs (CK# & CK)
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W3EG7235S-JD3
256MB
32Mx72
100MHz
133MHz
WED3DG7235S
128Mb
16Mx8
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Untitled
Abstract: No abstract text available
Text: W3EG7234S-D3 -JD3 -AJD3 White Electronic Designs PRELIMINARY* 256MB - 32Mx72 DDR SDRAM REGISTERED, w/PLL FEATURES DESCRIPTION Double-data-rate architecture The W3EG7234S is a 32Mx72 Double Data Rate SDRAM memory module based on 128Mb DDR SDRAM component. The module consists of eighteen
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W3EG7234S-D3
256MB
32Mx72
100MHz
133MHz
W3EG72341)
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BA1A11
Abstract: No abstract text available
Text: White Electronic Designs W3DG64128V-JD1 PRELIMINARY* 1GB- 128Mx64 SDRAM, UNBUFFERED w/PLL DESCRIPTION FEATURES The W3DG64128V is a 128Mx64 synchronous DRAM module which consists of eight 128Mx8 stack of SDRAM components in TSOP II package, and one 2Kb EEPROM
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W3DG64128V-JD1
128Mx64
PC100
PC133
W3DG64128V
128Mx8
BA1A11
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DDR200
Abstract: DDR266 DDR333 DDR400 WED3EG7232S-JD3 256mb ddr333 200 pin T26Z
Text: WED3EG7232S-JD3 PRELIMINARY 256MB – 32Mx72 DDR SDRAM UNBUFFERED FEATURES DESCRIPTION Double-data-rate architecture The WED3EG7232S is a 32Mx72 Double Data Rate SDRAM memory module based on 256Mb DDR SDRAM components. The module consists of nine 32Mx8 DDR
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WED3EG7232S-JD3
256MB
32Mx72
WED3EG7232S
256Mb
32Mx8
DDR200,
DDR266,
DDR333
DDR200
DDR266
DDR400
WED3EG7232S-JD3
256mb ddr333 200 pin
T26Z
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Untitled
Abstract: No abstract text available
Text: WED3EG7232S-D3 -JD3 White Electronic Designs PRELIMINARY 256MB – 32Mx72 DDR SDRAM UNBUFFERED FEATURES DESCRIPTION Double-data-rate architecture The WED3EG7232S is a 32Mx72 Double Data Rate SDRAM memory module based on 256Mb DDR SDRAM components. The module consists of nine 32Mx8 DDR
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WED3EG7232S-D3
256MB
32Mx72
DDR200,
DDR266,
DDR333
DDR400
166MHz)
200MHz)
256MB-
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DDR200
Abstract: DDR266 DDR333 DDR400 42704
Text: White Electronic Designs W3EG7264S-JD3-D3 PRELIMINARY* 512MB – 64Mx72 DDR SDRAM UNBUFFERED FEATURES DESCRIPTION The W3EG7264S is a 64Mx72 Double Data Rate SDRAM memory module based on 512Mb DDR SDRAM components. The module consists of nine 64Mx8 DDR SDRAMs in 66 pin TSOP packages mounted on a 184
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W3EG7264S-JD3-D3
512MB
64Mx72
W3EG7264S
512Mb
64Mx8
DDR200,
DDR266,
DDR333
DDR200
DDR266
DDR400
42704
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Untitled
Abstract: No abstract text available
Text: W3EG64128S-D3 -JD3 White Electronic Designs ADVANCED* 1GB – 2x64Mx64 DDR SDRAM UNBUFFERED FEATURES DESCRIPTION Double-data-rate architecture The W3EG64128S is a 2x64Mx64 Double Data Rate SDRAM memory module based on 512Mb DDR SDRAM component. The module consists of sixteen 64Mx8 DDR
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W3EG64128S-D3
2x64Mx64
W3EG64128S
512Mb
64Mx8
100MHz,
133MHz,
166MHz
200MHz
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reset samsung 1665
Abstract: DDR200 DDR266 DDR333 DDR400 13003 TO 92 PACKAGE
Text: White Electronic Designs W3EG7264S-JD3-D3 512MB – 64Mx72 DDR SDRAM UNBUFFERED FEATURES DESCRIPTION The W3EG7264S is a 64Mx72 Double Data Rate SDRAM memory module based on 512Mb DDR SDRAM components. The module consists of nine 64Mx8 DDR SDRAMs in 66 pin TSOP packages mounted on a 184
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W3EG7264S-JD3-D3
512MB
64Mx72
W3EG7264S
512Mb
64Mx8
DDR200,
DDR266,
DDR333
reset samsung 1665
DDR200
DDR266
DDR400
13003 TO 92 PACKAGE
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DDR200
Abstract: DDR266 DDR333 DDR400 W3EG64128S-D3
Text: W3EG64128S-D3 -JD3 White Electronic Designs ADVANCED* 1GB – 2x64Mx64 DDR SDRAM UNBUFFERED FEATURES DESCRIPTION Double-data-rate architecture The W3EG64128S is a 2x64Mx64 Double Data Rate SDRAM memory module based on 512Mb DDR SDRAM component. The module consists of sixteen 64Mx8 DDR
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W3EG64128S-D3
2x64Mx64
W3EG64128S
512Mb
64Mx8
100MHz,
133MHz,
166MHz
200MHz
DDR200
DDR266
DDR333
DDR400
W3EG64128S-D3
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Untitled
Abstract: No abstract text available
Text: W3EG64128S-D3 -JD3 White Electronic Designs ADVANCED* 1GB – 2x64Mx64 DDR SDRAM UNBUFFERED FEATURES DESCRIPTION Double-data-rate architecture The W3EG64128S is a 2x64Mx64 Double Data Rate SDRAM memory module based on 512Mb DDR SDRAM component. The module consists of sixteen 64Mx8 DDR
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W3EG64128S-D3
2x64Mx64
W3EG64128S
512Mb
64Mx8
128Mx64
100MHz,
133MHz,
166MHz
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Untitled
Abstract: No abstract text available
Text: White Electronic Designs W3EG7264S-JD3-D3 512MB – 64Mx72 DDR SDRAM UNBUFFERED FEATURES DESCRIPTION The W3EG7264S is a 64Mx72 Double Data Rate SDRAM memory module based on 512Mb DDR SDRAM components. The module consists of nine 64Mx8 DDR SDRAMs in 66 pin TSOP packages mounted on a 184
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W3EG7264S-JD3-D3
512MB
64Mx72
W3EG7264S
512Mb
64Mx8
DDR200,
DDR266,
DDR333
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DDR200
Abstract: DDR266 DDR333 DDR400 W3EG64128S-D3
Text: W3EG64128S-D3 -JD3 White Electronic Designs ADVANCED* 1GB – 2x64Mx64 DDR SDRAM UNBUFFERED FEATURES DESCRIPTION Double-data-rate architecture The W3EG64128S is a 2x64Mx64 Double Data Rate SDRAM memory module based on 512Mb DDR SDRAM component. The module consists of sixteen 64Mx8 DDR
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W3EG64128S-D3
2x64Mx64
W3EG64128S
512Mb
64Mx8
100MHz,
133MHz,
166MHz
200MHz
DDR200
DDR266
DDR333
DDR400
W3EG64128S-D3
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Untitled
Abstract: No abstract text available
Text: WED3EG7232S-JD3 White Electronic PRELIMINARY 256MB – 32Mx72 DDR SDRAM UNBUFFERED FEATURES DESCRIPTION Double-data-rate architecture The WED3EG7232S is a 32Mx72 Double Data Rate SDRAM memory module based on 256Mb DDR SDRAM components. The module consists of nine 32Mx8 DDR
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WED3EG7232S-JD3
256MB
32Mx72
DDR200,
DDR266,
DDR333
DDR400
166MHz)
200MHz)
400HMz
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Untitled
Abstract: No abstract text available
Text: SPICE MODELS: BAS16T BAW56T BAV70T BAV99T BAS16T, BAW56T, BAV70T, BAV99T SURFACE MOUNT FAST SWITCHING DIODE NEW PRODUCT Features • · · · Ultra-Small Surface Mount Package Fast Switching Speed For General Purpose Switching Applications High Conductance
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BAS16T
BAW56T
BAV70T
BAV99T
BAS16T,
BAW56T,
BAV70T,
OT-523
OT-523,
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Untitled
Abstract: No abstract text available
Text: BAS16T, BAW56T, BAV70T, BAV99T SURFACE MOUNT FAST SWITCHING DIODE NEW PRODUCT Features • · · · Ultra-Small Surface Mount Package Fast Switching Speed For General Purpose Switching Applications High Conductance SOT-523 A C Mechanical Data · · · · ·
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BAS16T,
BAW56T,
BAV70T,
BAV99T
OT-523
OT-523,
J-STD-020A
MIL-STD-202,
InS16T-7
BAW56T-7
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diode marking code 7
Abstract: MARKING EG BAS16T-7 BAS16T BAV70T BAV99T BAW56T J-STD-020A diode Marking code A2
Text: BAS16T, BAW56T, BAV70T, BAV99T SURFACE MOUNT FAST SWITCHING DIODE NEW PRODUCT Features • · · · Ultra-Small Surface Mount Package Fast Switching Speed For General Purpose Switching Applications High Conductance SOT-523 A C Mechanical Data · · · · ·
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BAS16T,
BAW56T,
BAV70T,
BAV99T
OT-523
OT-523,
J-STD-020A
MIL-STD-202,
T-523
3000/Tape
diode marking code 7
MARKING EG
BAS16T-7
BAS16T
BAV70T
BAV99T
BAW56T
J-STD-020A
diode Marking code A2
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Untitled
Abstract: No abstract text available
Text: BAS16T, BAW56T, BAV70T, SPICE MODEL: BAV70T BAV99T SURFACE MOUNT FAST SWITCHING DIODE NEW PRODUCT Features • · · · Ultra-Small Surface Mount Package Fast Switching Speed For General Purpose Switching Applications High Conductance SOT-523 A C Mechanical Data
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BAS16T,
BAW56T,
BAV70T,
BAV70T
BAV99T
OT-523
OT-523,
J-STD-020A
MIL-STD-202,
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DIODE marking A2
Abstract: marking A2 marking code je BAS16T BAS16T-7 BAV70T BAV99T BAW56T J-STD-020A
Text: SPICE MODELS: BAS16T BAW56T BAV70T BAV99T BAS16T, BAW56T, BAV70T, BAV99T SURFACE MOUNT FAST SWITCHING DIODE Features • · · · · Ultra-Small Surface Mount Package Fast Switching Speed For General Purpose Switching Applications High Conductance Also Available in Lead Free Version
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BAS16T
BAW56T
BAV70T
BAV99T
BAS16T,
BAW56T,
BAV70T,
OT-523
OT-523,
DIODE marking A2
marking A2
marking code je
BAS16T-7
BAV99T
J-STD-020A
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F02S
Abstract: bd4448 D4148
Text: IIAIEt SURFACE MOUNT SWITCHING DIODES 350 mW SWITCHING DIODES/TO-236 Device Type P eak Reverse Voltage VRM : V V Marking Code : BAS 16 8A V 70 BAV99 B AW 56 BAL99 IM B D 4148 IM B D 4448 A6 JJ JE JD JF A2 A3 O P E R A T IN G /S TO R A G E TE M P E R A TU R E R A N G E -65°C to +175°C
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OCR Scan
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DIODES/TO-236
BAV99
BAL99
DF005S
DF04S
SDF01
F02S
bd4448
D4148
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RMC connector
Abstract: No abstract text available
Text: J- ^ / j. II i# / POS.9 - 1“ l= = L i 1K -H in n -i— I — jT _A L+-i-PHCJ \ ' / •0.8 ^ POS. 1 ±0^ JD.8x8=6.4^1 ■<: >■ RMC—E9F2S—BSLA2N—MA2 / RMC—E9F2S—BSLA2N—MA1 ^ - \ 2 A2 RMC—Et )9M2Y )-0 M ( )-MA1 1 A1
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OCR Scan
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46NYL0N
RMC00467
RMC connector
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sub-d 25 polig
Abstract: sub-d 25 pin dimension
Text: 2 4 3 5 7 6 9 2 A A Einzelheit H 20:1 Detail H (20:1) ai 'ai <u -J= :□ a i 6.2 -0.25 ro c JD C :□ O B B c/ 1 r*-. s o +l i_n *— *— N I L n -n A 6.4 -0.25 11.7 ± 0.2 C C Einzelheit H Detail H Schnitt A A (20:1) Section (20:1) alle Kontakte/all contacts
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sub-d 25 polig
Abstract: sub-d 25 pin dimension
Text: 2 4 3 5 7 6 9 O 2 A A Einzelheit H 20:1 Detail H (20:1) 01 'cu cu -J= ¡O 6.2 O I TO C JD C ID O -0.25 B B c/1 r*-. s o +l i_n *— *— N i L n-n A 6.4 -0.25 11.7 ± 0.2 C C Einzelheit H Detail H Schnitt AA (20:1) Section (20:1) alle Kontakte/all contacts
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