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    ITT Interconnect Solutions APK-SA16A07-002

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    ITT Interconnect Solutions APK-PA16A07-002

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    TE Connectivity AGA-16-A03N

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    ITT Interconnect Solutions APKSA16A07002C

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    A16A0 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    M95M01-D

    Abstract: M95M01-DF marking M95 m01d
    Text: M95M01-DF M95M01-R 1-Mbit serial SPI bus EEPROM Datasheet − production data Features • Compatible with the Serial Peripheral Interface SPI bus ■ Memory array – 1 Mb (128 Kbytes) of EEPROM – Page size: 256 bytes SO8 (MN) 150 mil width ■ Write


    Original     		PDF M95M01-DF M95M01-R 200-year M95M01-D marking M95 m01d

    mc 6871 a

    Abstract: No abstract text available
    Text: TMS320VC5410A Fixed-Point Digital Signal Processor Data Manual Literature Number: SPRS139F November 2000 – Revised May 2004 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not


    Original     		PDF TMS320VC5410A SPRS139F TMS320VC5410A SPRS139F SPRS139E mc 6871 a

    Untitled

    Abstract: No abstract text available
    Text: PDM31034 PRELIMINARY 1 Megabit 3.3V Static RAM 128K x 8-Bit Revolutionary Pinout Description Features n High-speed access times Com’l: 9, 10, 12, 15 and 20 ns Ind’l.: 12, 15 and 20 ns Automotive: 15 and 20 ns n Low power operation typical - PDM31034SA


    Original     		PDF PDM31034 PDM31034 PDM31034SA 32-pin 128Kx8)

    Untitled

    Abstract: No abstract text available
    Text: PDM31024LL PRELIMINARY 128K x 8-Bit Low Power 3.3 Volt Description Features n High-speed access times Com’l: 70, 85 and 100ns n Low power operation typical - PDM31024LL Active: 50 mW Standby: 2µW The PDM31024LL is a very low power CMOS static RAM organized as 131,072 x 8 bits. Writing to this


    Original     		PDF PDM31024LL PDM31024LL 100ns 32-pin PDM31024 128Kx8)

    R36W

    Abstract: lnk303 samsung ltn LD3130 CRC10 MXT3010 R44-R47 M 8012 R54-R55 t9354
    Text: MXT3010 Reference Manual Version 4.1 Order Number: 100108-05 October 1999 Copyright c 1999 by Maker Communications, Inc. All rights reserved. Printed in the United States of America. The information in this document is believed to be correct, however, the


    Original     		PDF MXT3010 16-bit MXT3010 R36W lnk303 samsung ltn LD3130 CRC10 R44-R47 M 8012 R54-R55 t9354

    EDI8L24129V

    Abstract: No abstract text available
    Text: EDI8L24129V 128Kx24 SRAM 3.3 Volt FEATURES The EDI8L24129VxxBC is a 3.3V, three megabit SRAM constructed with three 128Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V operating voltage, the EDI8L24129V is ideal for creating a single chip memory solution


    Original     		PDF EDI8L24129V 128Kx24 EDI8L24129VxxBC 128Kx8 EDI8L24129V DSP5630x 21060L 21062L EDI8L24129V,

    AM188ES-33VC

    Abstract: IA186ES IA186ES-PQF100I IA186ES-PTQ100I IA188ES IA188ES-PQF100I IA188ES-PTQ100I DIMENSIONS pqfp 100
    Text: innovASIC IA186ES/IA188ES 8/16-BIT Microcontrollers Preliminary Data Sheet Copyright  2003  IA186ES/IA188ES Preliminary Data Sheet 8/16-BIT MICROCONTROLLERS Data Sheet Contents FEATURES .4


    Original     		PDF IA186ES/IA188ES 8/16-BIT IA186ES-PQF100I IA186ES-PTQ100I IA188ES-PQF100I IA188ES-PTQ100I AM186ES-20KC\W AM186ES-20KI\W AM188ES-33VC IA186ES IA186ES-PQF100I IA186ES-PTQ100I IA188ES IA188ES-PQF100I IA188ES-PTQ100I DIMENSIONS pqfp 100

    Untitled

    Abstract: No abstract text available
    Text: Multi-Purpose Flash MPF + SRAM ComboMemory SST32VF201 / SST32VF202 / SST32VF401 / SST32VF402 SST32VF201 / 202 / 401 / 402SRAM (x16) ComboMemories Advance Information FEATURES: • MPF + SRAM ComboMemory – SST32VF201: 128K x16 Flash + 64K x16 SRAM – SST32VF202: 128K x16 Flash + 128K x16 SRAM


    Original     		PDF SST32VF201 SST32VF202 SST32VF401 SST32VF402 402SRAM SST32VF201: SST32VF202: SST32VF401: SST32VF402:

    Untitled

    Abstract: No abstract text available
    Text: M95M01-R 1 Mbit Serial SPI bus EEPROM with high speed clock Preliminary Data Features • Compatible with SPI bus serial interface Positive Clock SPI modes ■ Single supply voltage: 1.8 V to 5.5 V ■ High speed – 5 MHz clock rate – 5 ms Write time


    Original     		PDF M95M01-R 40-year

    Y52 h 85c

    Abstract: ECG 1729 1DF28 1/y148 amplifier datasheet tca 761 HD66522 1DD01 Y148 y158 0F076
    Text: HD66522 160-Channel Column Driver with Internal Bit-Map RAM for Reflective Color Display and Grayscale Display ADE-207-302(Z) '99.9 Rev. 0.0 Description The HD66522 is a column driver for liquid crystal dot-matrix graphic display system. This LSI incorporates 160 liquid crystal drive circuit and a 160 * 240 * 2-bit bit-mapped RAM, which is suitable for


    Original     		PDF HD66522 160-Channel ADE-207-302 HD66522 Y52 h 85c ECG 1729 1DF28 1/y148 amplifier datasheet tca 761 1DD01 Y148 y158 0F076

    Untitled

    Abstract: No abstract text available
    Text: 8 Megabit FlashBank Memory FEATURES: • Single 3.0-Volt Read and Write Operations • Separate Memory Banks by Address Space • Superior Reliability – Endurance: Pr el im in ar y – Bank1: 6Mbit 384K x 16 / 768K x 8 Flash – Bank2: 2Mbit (128K x 16 / 256K x 8) Flash


    Original     		PDF LE28DW8163T-80T xxxx-19/20 xxxx-20/20

    BEST BIOS PROGRAMMING AND DATA FOR EEPROM

    Abstract: date code Sanyo semiconductor DTS13
    Text: Preliminary Specifications CMOS LSI LE28CV1001DT/DTS-13/15 1M-Bit 128k x 8 Page Mode EEPROM Features Single 3.3-Volt Read and Write Operations CMOS Flash EEPROM Technology Page-write Endurance Cycles: 104 10 Years Data Retention Low Power Consumption: Active Current: 20 mA (Max.)


    Original     		PDF LE28CV1001DT/DTS-13/15 130ns LE28CV100 BEST BIOS PROGRAMMING AND DATA FOR EEPROM date code Sanyo semiconductor DTS13

    STK17TA8

    Abstract: STK17TA8-R
    Text: STK17TA8 128Kx8 Autostore nvSRAM With Real-Time Clock FEATURES DESCRIPTION • nvSRAM Combined With Integrated Real-Time Clock Functions RTC, Watchdog Timer, Clock Alarm, Power Monitor The Simtek STK17TA8 combines a 1Mb non-volatile static RAM (nvSRAM) with a full-featured real-time


    Original     		PDF STK17TA8 128Kx8 STK17TA8 ML0025 STK17TA8-R

    SST32HF164-90-4E-EK

    Abstract: SST32HF162 SST32HF164 SST32HF802 SW-5520
    Text: Multi-Purpose Flash MPF + SRAM ComboMemory SST32HF802 / SST32HF162 / SST32HF164 SST32HF802 / 162 / 164MPF (x16) + 1Mb SRAM (x16) ComboMemories Data Sheet FEATURES: • MPF + SRAM ComboMemory – SST32HF802: 512K x16 Flash + 128K x16 SRAM – SST32HF162: 1M x16 Flash + 128K x16 SRAM


    Original     		PDF SST32HF802 SST32HF162 SST32HF164 164MPF SST32HF802: SST32HF162: SST32HF164: MO-210, 48-BALL SST32HF164-90-4E-EK SST32HF164 SW-5520

    TMS320C5416 DSP

    Abstract: ic hm 2007 internal block diagram ,Architecture TMS320C5416 instruction set of TMS320C5416 tms320c5416 mcbsp example tms320c5416 enhanced peripherals
    Text: TMS320VC5410A Fixed-Point Digital Signal Processor Data Manual Literature Number: SPRS139H November 2000 – Revised June 2006 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not


    Original     		PDF TMS320VC5410A SPRS139H TMS320VC5410A SPRS139H SPRS139G 16-Bit MSP430 MSP430X1XX TMS320C5416 DSP ic hm 2007 internal block diagram ,Architecture TMS320C5416 instruction set of TMS320C5416 tms320c5416 mcbsp example tms320c5416 enhanced peripherals

    IS61LP12832

    Abstract: IS61LP12832-166B IS61LP12832-166TQ IS61LP12832-200B IS61LP12832-200TQ IS61LP12836
    Text: IS61LP12832 IS61LP12836 ISSI 128K x 32, 128K x 36 SYNCHRONOUS PIPELINED STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Linear burst sequence control using MODE input


    Original     		PDF IS61LP12832 IS61LP12836 100-Pin 119-pin IS61LP12832 IS61LP12836 IS61LP12836-200TQ IS61LP12836-200B IS61LP12836-166TQ IS61LP12836-166B IS61LP12832-166B IS61LP12832-166TQ IS61LP12832-200B IS61LP12832-200TQ

    C5000

    Abstract: TMS320C5000 TMS320VC5410A TMS320VC541
    Text: TMS320VC5410A Fixed-Point Digital Signal Processor Data Manual Literature Number: SPRS139H November 2000 – Revised June 2006 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not


    Original     		PDF TMS320VC5410A SPRS139H SPRS139G SPRS139H C5000 TMS320C5000 TMS320VC5410A TMS320VC541

    IS29F010-70PL

    Abstract: IS29F010
    Text: IS29F010 IS29F010 1 MEGABIT 128K x 8-bit CMOS, 5.0V Only Sectored Flash Memory PRELIMINARY OCTOBER 1998 FEATURES • High-performance CMOS – 35, 45, 55, 70, and 90 ns max. access time • Single 5V-only power supply – 5V ± 10% for Read, Program, and Erase


    Original     		PDF IS29F010 32-pin IS29F010 IS29F010-45PLI IS29F010-45TI IS29F010-55PLI IS29F010-70PL

    Untitled

    Abstract: No abstract text available
    Text: m IS61SF12832 128K x 32 SYNCHRONOUS FLOW-THROUGH STATIC RAM FEATURES • Fast access times: 7.5 ns, 8 ns, 8.5 ns, 10 ns, and 11 ns Internal self-timed write cycle Individual Byte Write Control and Global Write Clock controlled, registered address, data inputs and control signals


    OCR Scan     		PDF IS61SF12832 100-Pin 119-pin PK13197TÃ QGQGS55 17-1A T004404

    Untitled

    Abstract: No abstract text available
    Text: ISSI IS29F010 1 MEGABIT 128K x 8-bit CMOS, 5.0V Only Sectored Flash Memory p r e l im in a r y O c t o b e r 1998 FEATURES • High-performance CMOS - 35, 45, 55, 70, and 90 ns max. access time • Single 5V-only power supply - 5V ± 10% for Read, Program, and Erase


    OCR Scan     		PDF IS29F010 program32 PK13197T32 T004404 00G05fc

    Untitled

    Abstract: No abstract text available
    Text: _ EDI7F82048C ^E D I Electronic Designs Inc. High Performance Sixteen Megabit Flash EEPROM 2Megx8 CMOS Flash EEPROM Module Features The EDI7F82048C is a 5V-0nly In-System Programmable and Erasable Read Only Memory Module. Organized as 1Megx8 bits, the module contains sixteen 128Kx8 Flash


    OCR Scan     		PDF EDI7F82048C EDI7F82048C 128Kx8 A17-A20 Q01fl34 EDI7F82048C120BSC EDI7F82048C150BSC EDI7F82048C200BSC

    JJ7N

    Abstract: No abstract text available
    Text: IS61SF12836 v 128K x 36 SYNCHRONOUS FLOW-THROUGH STATIC RAM FEATURES • Fast access times: 7.5 ns, 8 ns, 8.5 ns, 11 ns • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Pentium or linear burst sequence control


    OCR Scan     		PDF IS61SF12836 100-Pin 119-pin i486TM, 68TION IS61SF12836-7 IS61SF12836-8TQ IS61SF12836-8B IS61SF12836-8 JJ7N

    IS29F010-70PL

    Abstract: No abstract text available
    Text: IS29F010 1 MEGABIT 128K x 8-bit CMOS, 5.0V Only Sectored Flash Memory p r e l im in a r y Oc t o b e r 1998 FEATURES • High-performance CMOS - 35, 45, 55, 70, and 90 ns max. access time • Single 5V-only power supply - 5V ± 10% for Read, Program, and Erase


    OCR Scan     		PDF IS29F010 IS29F010-45PLI IS29F010-45TI IS29F010-55PLI IS29F010-55TI IS29F010-70PLI IS29F010-70TI IS29F010-90PLI IS29F010-90TI FL006-1A IS29F010-70PL

    FE3020

    Abstract: FE3030 Western Digital microprocessor 80286 Word Size FE3010 FE3001A FE3031 8254 cascading FE3000A 80386SX
    Text: WESTERN DIGIT AL CORP SIE D • T?iaEEÔ OQOSÔS4 O l - S Z '3 3 - ìS ■ Advance Information FE3010B AT Peripheral Control Device □ □ □ □ □ 100% hardware and software compatible to the IBM* AT* 15 interrupt channels 3 timer channels 7 DMA channels


    OCR Scan     		PDF FE3010B FE3400B FE3600B FE3010B 80386SX, FE3017. T-52-33-15 FE3010 84-Pln FE3020 FE3030 Western Digital microprocessor 80286 Word Size FE3001A FE3031 8254 cascading FE3000A 80386SX