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    LE28CV100 Search Results

    LE28CV100 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Type PDF
    LE28CV1001DT-13 Sanyo Semiconductor 1M-Bit (128k x 8) Page Mode EEPROM Original PDF
    LE28CV1001DT-15 Sanyo Semiconductor 1M-Bit (128k x 8) Page Mode EEPROM Original PDF
    LE28CV1001DTS-13 Sanyo Semiconductor 1M-Bit (128k x 8) Page Mode EEPROM Original PDF
    LE28CV1001DTS-15 Sanyo Semiconductor 1M-Bit (128k x 8) Page Mode EEPROM Original PDF
    LE28CV1001M Sanyo Semiconductor 1MEG (131072 words x 8 bits) Flash Memory Original PDF
    LE28CV1001M-12 Sanyo Semiconductor 1MEG (131072words x 8-Bit) flash memory Original PDF
    LE28CV1001M-15 Sanyo Semiconductor 1MEG (131072words x 8-Bit) flash memory Original PDF
    LE28CV1001T Sanyo Semiconductor 1MEG (131072 words x 8 bits) Flash Memory Original PDF
    LE28CV1001T-12 Sanyo Semiconductor 1MEG (131072 words x 8 bits) Flash Memory Original PDF
    LE28CV1001T-15 Sanyo Semiconductor 1MEG (131072 words x 8 bits) Flash Memory Original PDF

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    BEST BIOS PROGRAMMING AND DATA FOR EEPROM

    Abstract: date code Sanyo semiconductor DTS13
    Text: Preliminary Specifications CMOS LSI LE28CV1001DT/DTS-13/15 1M-Bit 128k x 8 Page Mode EEPROM Features Single 3.3-Volt Read and Write Operations CMOS Flash EEPROM Technology Page-write Endurance Cycles: 104 10 Years Data Retention Low Power Consumption: Active Current: 20 mA (Max.)


    Original     		PDF LE28CV1001DT/DTS-13/15 130ns LE28CV100 BEST BIOS PROGRAMMING AND DATA FOR EEPROM date code Sanyo semiconductor DTS13

    LE28CV1001M

    Abstract: LE28CV1001T TSOP32
    Text: Ordering number : EN*5409 CMOS LSI LE28CV1001M, T-12/15 1MEG 131072 words x 8 bits Flash Memory Overview Package Dimensions The LE28CV1001M, T Series ICs are 1 MEG flash memory products that feature a 131072-word × 8-bit organization and 3.3 V single-voltage power supply


    Original     		PDF LE28CV1001M, T-12/15 131072-word 128-byte 3205-SOP32 LE28CV1001M] LE28CV1001M LE28CV1001T TSOP32

    MSP14LV160

    Abstract: MSP54LV100 MCF10P-128MS 70f3350GC 63a52 95f264k HY27US08121B MSP55LV128 MSP55lv512 fujitsu msp55lv512
    Text: ＤＥＶＩＣＥ ＬＩＳＴ ＡＦ９７０８ ＦＬＡＳＨ ＰＲＯＧＲＡＭＭＥＲ ＡＦ９７０９ ＦＬＡＳＨ ＰＲＯＧＲＡＭＭＥＲ ＡＦ９７０９Ｂ ＦＬＡＳＨ ＰＲＯＧＲＡＭＭＥＲ


    Original     		PDF AF9708/09/09B/10/23 nearest09 AF9709B/09C AF9723 AF9708 TE004-44PL-04 AF9709 MSP14LV160 MSP54LV100 MCF10P-128MS 70f3350GC 63a52 95f264k HY27US08121B MSP55LV128 MSP55lv512 fujitsu msp55lv512

    LE28CV1001M

    Abstract: LE28CV1001T TSOP32
    Text: Ordering number : EN %•5409 CMOS LSI iSA\YO LE28CV1001M, T-12/15 No. * 5409 1MEG 131072 words x 8 bits Fiash Memory Preliminary Overview Package Dimensions T h e L E 2 8 C V 1 0 0 1 M , T S eries IC s are 1 M EG flash m em ory p roducts that feature a 131072-w ord x 8-bit


    OCR Scan     		PDF LE28CV1001M, T-12/15 131072-word 128-byte LE28CV1001M LE28CV1001T TSOP32

    2AAA 5555

    Abstract: No abstract text available
    Text: Ordering number : EN %•5409 CMOS LSI iSA\YO LE28CV1001M, T-12/15 No. * 5409 1MEG 131072 words x 8 bits Fiash Memory Preliminary Overview Package Dimensions T h e L E 2 8 C V 1 0 0 1 M , T S eries IC s are 1 M EG flash m em ory p roducts that feature a 131072-w ord x 8-bit


    OCR Scan     		PDF LE28CV1001M, T-12/15 131072-w 128-byte 3205-SOP32 LE28CV1001M] 2AAA 5555

    Y112

    Abstract: SOP32 525mil t18i kiv 07 na572
    Text: >¿3C3- KNo. N *5721 Em m x = *- z 1M 1 3 1 0 7 2 7 - K x 8 l i M - 7 5 ï / î / a > t y s // <.#%&* -IIIk |l!’ s|f 1310727- H X ê fc 'v h W 3.3VIH —"ÄÌR Jftil ? iz ¿ J g . # 3 .3 V itl- S j» (r «t Æ >U — F/v ï h m W * r í6 T ? * 5 . //


    OCR Scan     		PDF LE28CV1001 AT-12/15 LE28CV1001AM, CMOS777' 120D9/150Ã 15jiA 10VlOÃ 525mil) LE28CV10Q1AM X20mm) Y112 SOP32 525mil t18i kiv 07 na572