LE28CV100 Search Results

LE28CV100 Datasheets (10)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
LE28CV1001DT-13		Sanyo Semiconductor	1M-Bit (128k x 8) Page Mode EEPROM		Original	PDF
LE28CV1001DT-15		Sanyo Semiconductor	1M-Bit (128k x 8) Page Mode EEPROM		Original	PDF
LE28CV1001DTS-13		Sanyo Semiconductor	1M-Bit (128k x 8) Page Mode EEPROM		Original	PDF
LE28CV1001DTS-15		Sanyo Semiconductor	1M-Bit (128k x 8) Page Mode EEPROM		Original	PDF
LE28CV1001M		Sanyo Semiconductor	1MEG (131072 words x 8 bits) Flash Memory		Original	PDF
LE28CV1001M-12		Sanyo Semiconductor	1MEG (131072words x 8-Bit) flash memory		Original	PDF
LE28CV1001M-15		Sanyo Semiconductor	1MEG (131072words x 8-Bit) flash memory		Original	PDF
LE28CV1001T		Sanyo Semiconductor	1MEG (131072 words x 8 bits) Flash Memory		Original	PDF
LE28CV1001T-12		Sanyo Semiconductor	1MEG (131072 words x 8 bits) Flash Memory		Original	PDF
LE28CV1001T-15		Sanyo Semiconductor	1MEG (131072 words x 8 bits) Flash Memory		Original	PDF

LE28CV100 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
BEST BIOS PROGRAMMING AND DATA FOR EEPROM Abstract: date code Sanyo semiconductor DTS13 Text: Preliminary Specifications CMOS LSI LE28CV1001DT/DTS-13/15 1M-Bit 128k x 8 Page Mode EEPROM Features Single 3.3-Volt Read and Write Operations CMOS Flash EEPROM Technology Page-write Endurance Cycles: 104 10 Years Data Retention Low Power Consumption: Active Current: 20 mA (Max.)	Original	LE28CV1001DT/DTS-13/15 130ns LE28CV100 BEST BIOS PROGRAMMING AND DATA FOR EEPROM date code Sanyo semiconductor DTS13	PDF
LE28CV1001M Abstract: LE28CV1001T TSOP32 Text: Ordering number : EN*5409 CMOS LSI LE28CV1001M, T-12/15 1MEG 131072 words x 8 bits Flash Memory Overview Package Dimensions The LE28CV1001M, T Series ICs are 1 MEG flash memory products that feature a 131072-word × 8-bit organization and 3.3 V single-voltage power supply	Original	LE28CV1001M, T-12/15 131072-word 128-byte 3205-SOP32 LE28CV1001M] LE28CV1001M LE28CV1001T TSOP32	PDF
MSP14LV160 Abstract: MSP54LV100 MCF10P-128MS 70f3350GC 63a52 95f264k HY27US08121B MSP55LV128 MSP55lv512 fujitsu msp55lv512 Text: ＤＥＶＩＣＥＬＩＳＴＡＦ９７０８ＦＬＡＳＨＰＲＯＧＲＡＭＭＥＲＡＦ９７０９ＦＬＡＳＨＰＲＯＧＲＡＭＭＥＲＡＦ９７０９ＢＦＬＡＳＨＰＲＯＧＲＡＭＭＥＲ	Original	AF9708/09/09B/10/23 nearest09 AF9709B/09C AF9723 AF9708 TE004-44PL-04 AF9709 MSP14LV160 MSP54LV100 MCF10P-128MS 70f3350GC 63a52 95f264k HY27US08121B MSP55LV128 MSP55lv512 fujitsu msp55lv512	PDF
LE28CV1001M Abstract: LE28CV1001T TSOP32 Text: Ordering number : EN %•5409 CMOS LSI iSA\YO LE28CV1001M, T-12/15 No. * 5409 1MEG 131072 words x 8 bits Fiash Memory Preliminary Overview Package Dimensions T h e L E 2 8 C V 1 0 0 1 M , T S eries IC s are 1 M EG flash m em ory p roducts that feature a 131072-w ord x 8-bit	OCR Scan	LE28CV1001M, T-12/15 131072-word 128-byte LE28CV1001M LE28CV1001T TSOP32	PDF
2AAA 5555 Abstract: No abstract text available Text: Ordering number : EN %•5409 CMOS LSI iSA\YO LE28CV1001M, T-12/15 No. * 5409 1MEG 131072 words x 8 bits Fiash Memory Preliminary Overview Package Dimensions T h e L E 2 8 C V 1 0 0 1 M , T S eries IC s are 1 M EG flash m em ory p roducts that feature a 131072-w ord x 8-bit	OCR Scan	LE28CV1001M, T-12/15 131072-w 128-byte 3205-SOP32 LE28CV1001M] 2AAA 5555	PDF
Y112 Abstract: SOP32 525mil t18i kiv 07 na572 Text: >¿3C3- KNo. N 5721 Em m x = - z 1M 1 3 1 0 7 2 7 - K x 8 l i M - 7 5 ï / î / a > t y s // <.#%&* -IIIk \|l!’ s\|f 1310727- H X ê fc 'v h W 3.3VIH —"ÄÌR Jftil ? iz ¿ J g . # 3 .3 V itl- S j» (r «t Æ >U — F/v ï h m W * r í6 T ? * 5 . //	OCR Scan	LE28CV1001 AT-12/15 LE28CV1001AM, CMOS777' 120D9/150Ã 15jiA 10VlOÃ 525mil) LE28CV10Q1AM X20mm) Y112 SOP32 525mil t18i kiv 07 na572	PDF