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    L-com Inc MRJ21DD-01

    CA MRJ21 MRJ21 01M
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    DigiKey MRJ21DD-01 Bag 1
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    Murata Manufacturing Co Ltd GRM0336T1E7R1DD01D

    CAP CER 7.1PF 25V T2H 0201
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    Murata Manufacturing Co Ltd GRM0337U1H8R1DD01D

    CAP CER 8.1PF 50V U2J 0201
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    Murata Manufacturing Co Ltd GRM0335C1E7R1DD01D

    CAP CER 7.1PF 25V C0G/NP0 0201
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    Murata Manufacturing Co Ltd GRM0336R1E6R1DD01D

    CAP CER 6.1PF 25V R2H 0201
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    1DD01 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Y52 h 85c

    Abstract: ECG 1729 1DF28 1/y148 amplifier datasheet tca 761 HD66522 1DD01 Y148 y158 0F076
    Text: HD66522 160-Channel Column Driver with Internal Bit-Map RAM for Reflective Color Display and Grayscale Display ADE-207-302(Z) '99.9 Rev. 0.0 Description The HD66522 is a column driver for liquid crystal dot-matrix graphic display system. This LSI incorporates 160 liquid crystal drive circuit and a 160 * 240 * 2-bit bit-mapped RAM, which is suitable for


    Original     		PDF HD66522 160-Channel ADE-207-302 HD66522 Y52 h 85c ECG 1729 1DF28 1/y148 amplifier datasheet tca 761 1DD01 Y148 y158 0F076

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC55V2325FF-100 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536 W O R D x 32 BIT Synchronous Pipelined Burst SRAM DESCRIPTION The TC55V2325FF is a 2 ,0 9 7 ,1 5 2 bit synchronous pipelined burst SRAM that is organized as 65,536 words by 32 bits and designed for use in a secondary cache to support MPUs which have burst


    OCR Scan     		PDF TC55V2325FF-100 TC55V2325FF 64KX32 LQFP100-P-1420-0

    TC55V4326FFI-150

    Abstract: No abstract text available
    Text: TOSHIBA TC55V4326FFI-150,-133 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 32-BIT SYNCHRONOUS PIPELINED BURST STATIC RAM DESCRIPTION The TC55V4326FFI is a 4,194,304-bit synchronous pipelined burst static random access memory SRAM


    OCR Scan     		PDF TC55V4326FFI-150 072-WORD 32-BIT TC55V4326FFI 304-bit LQFP100-P-1420-0

    TC55V16176FF

    Abstract: TC55V16176FF-167
    Text: TOSHIBA TC55V16176FF-167,-150,-133 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1,048,576-WORD BY 18-BIT SYNCHRONOUS PIPELINED BURST STATIC RAM DESCRIPTION The TC55V16176FF is a 18,874,368-bit synchronous pipelined burst static random access memory SRAM


    OCR Scan     		PDF TC55V16176FF-167 576-WORD 18-BIT TC55V16176FF 368-bit LQFP100-P-1420-0

    TC55V16366FF-167

    Abstract: No abstract text available
    Text: TOSHIBA TC55V16366FF-167#-150#-133 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 36-BIT SYNCHRONOUS PIPELINED BURST STATIC RAM DESCRIPTION The TC55V16366FF is a 18,874,368-bit synchronous pipelined burst static random access memory SRAM


    OCR Scan     		PDF TC55V16366FF-167 288-WORD 36-BIT TC55V16366FF 368-bit LQFP100-P-1420-0

    TC55V4376FF

    Abstract: TC55V4376FF-100
    Text: TO SH IBA TC55V4376FF-100,-83 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 36-BIT SYNCHRONOUS FLOW THROUGH STATIC RAM DESCRIPTION The TC55V4376FF is a 4,718,592-bit synchronous Flow through static random access memory SRAM organized as 131,072 words by 36 bits. It is designed for use as a secondary cache to support microprocessor


    OCR Scan     		PDF TC55V4376FF-100 072-WORD 36-BIT TC55V4376FF 592-bit LQFP100-P-1420-0

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC55V4336FFI-83 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 32-BIT SYNCHRONOUS FLOW THROUGH STATIC RAM DESCRIPTION The TC55V4336FFI is a 4,194,304-bit synchronous Flow through static random access memory SRAM organized as 131,072 words by 32 bits. It is designed for use as a secondary cache to support microprocessor


    OCR Scan     		PDF TC55V4336FFI-83 TC55V4336FFI 304-bit LQFP100-P-1420-0

    EN2952

    Abstract: No abstract text available
    Text: TOSHIBA TC55V4356FF-167#-150#-133 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 36-BIT SYNCHRONOUS PIPELINED BURST STATIC RAM DESCRIPTION The TC55V4356FF is a 4,718,592-bit synchronous pipelined burst static random access memory SRAM


    OCR Scan     		PDF TC55V4356FF-167 072-WORD 36-BIT TC55V4356FF 592-bit LQFP100-P-1420-0 EN2952

    TC55V4366FF

    Abstract: TC55V4366FF-167
    Text: TOSHIBA TC55V4366FF-167#-150#-133 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 36-BIT SYNCHRONOUS PIPELINED BURST STATIC RAM DESCRIPTION The TC55V4366FF is a 4,718,592-bit synchronous pipelined burst static random access memory SRAM


    OCR Scan     		PDF TC55V4366FF-167 072-WORD 36-BIT TC55V4366FF 592-bit LQFP100-P-1420-0

    TC55V4366FFI-150

    Abstract: No abstract text available
    Text: TOSHIBA TC55V4366FFI-150,-133 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 36-BIT SYNCHRONOUS PIPELINED BURST STATIC RAM DESCRIPTION The TC55V4366FFI is a 4,718,592-bit synchronous pipelined burst static random access memory SRAM


    OCR Scan     		PDF TC55V4366FFI-150 072-WORD 36-BIT TC55V4366FFI 592-bit LQFP100-P-1420-0

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC55V4326FF-167#-150#-133 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 32-BIT SYNCHRONOUS PIPELINED BURST STATIC RAM DESCRIPTION The TC55V4326FF is a 4,194,304-bit synchronous pipelined burst static random access memory SRAM


    OCR Scan     		PDF TC55V4326FF-167# TC55V4326FF 304-bit LQFP100-P-1420-0

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A TC55V2325FF-100J TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536 W O R D x 32 BIT Synchronous Pipelined Burst SRAM DESCRIPTION The TC55V2325FF is a 2,097,152 bit synchronous pipelined burst SRAM that is organized as 65,536 words by 32 bits and designed for use in a secondary cache to support MPUs which have burst


    OCR Scan     		PDF TC55V2325FF-100J TC55V2325FF TCC5Y2025FF G4KX32 HS-TD-18E LQFP100-P-1420-0

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA TC55V4376FF-100,-83 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 36-BIT SYNCHRONOUS FLOW THROUGH STATIC RAM DESCRIPTION The TC55V4376FF is a 4,718,592-bit synchronous Flow through static random access memory SRAM organized as 131,072 words by 36 bits. It is designed for use as a secondary cache to support microprocessor


    OCR Scan     		PDF TC55V4376FF-100 TC55V4376FF 592-bit I/032, LQFP100-P-1420-0

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC55V16366FF-167#-150#-133 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 36-BIT SYNCHRONOUS PIPELINED BURST STATIC RAM DESCRIPTION The TC55V16366FF is a 18,874,368-bit synchronous pipelined burst static random access memory SRAM


    OCR Scan     		PDF TC55V16366FF-167# 288-WORD 36-BIT TC55V16366FF 368-bit LQFP100-P-1420-0

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC55V4336FF-100,-83 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 32-BIT SYNCHRONOUS FLOW THROUGH STATIC RAM DESCRIPTION The TC55V4336FF is a 4,194,304-bit synchronous Flow through static random access memory SRAM


    OCR Scan     		PDF TC55V4336FF-100 TC55V4336FF 304-bit o7/20 LQFP100-P-1420-0

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC55V16176FF-167,-150,-133 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1,048,576-WORD BY 18-BIT SYNCHRONOUS PIPELINED BURST STATIC RAM DESCRIPTION The TC55V16176FF is a 18,874,368-bit synchronous pipelined burst static random access memory SRAM


    OCR Scan     		PDF TC55V16176FF-167 TC55V16176FF 368-bit LQFP100-P-1420-0

    tm 0917

    Abstract: No abstract text available
    Text: TOSHIBA TC55V4366FF-167#-150#-133 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 36-BIT SYNCHRONOUS PIPELINED BURST STATIC RAM DESCRIPTION The TC55V4366FF is a 4,718,592-bit synchronous pipelined burst static random access memory SRAM


    OCR Scan     		PDF TC55V4366FF-167# TC55V4366FF 592-bit LQFP100-P-1420-0 tm 0917

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC55V4366FFI-150,-133 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 36-BIT SYNCHRONOUS PIPELINED BURST STATIC RAM DESCRIPTION The TC55V4366FFI is a 4,718,592-bit synchronous pipelined burst static random access memory SRAM


    OCR Scan     		PDF TC55V4366FFI-150 TC55V4366FFI 592-bit LQFP100-P-1420-0

    TC55V1326AFF

    Abstract: TC55V1326AFF-66 TC55V1326
    Text: TOSHIBA TC55V1326AFF-66 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 32,768-WORD BY 32-BIT SYNCHRONOUS PIPELINED BURST STATIC RAM DESCRIPTION The TC55V1326AFF is a 1,048,576-bit synchronous pipelined burst static random access memory SRAM


    OCR Scan     		PDF TC55V1326AFF-66 768-WORD 32-BIT TC55V1326AFF 576-bit LQFP100-P-1420-0 TC55V1326AFF-66 TC55V1326

    Untitled

    Abstract: No abstract text available
    Text: HYM532220 X-Series “H Y U N D A I 2M X 32-bit CMOS DRAM MODULE DESCRIPTION The H Y M 532 220 is a 2M x 3 2 -bit Fast page m ode C M O S DRAM m odule consisting of four H Y 5 1 18160 in 44/50 pin TS O P II on a 72 Zig Zag Dual tabs pin glass-epoxy printed circuit board. 0.2 2|iF decoupling capacitor is m ounted


    OCR Scan     		PDF HYM532220 32-bit 532220TX DQ0-DQ31) 1DD01-10-FEB95 HYMS32220/SL HYM532220TXG HYM532220SLTXG

    HY628100

    Abstract: No abstract text available
    Text: HY 628100 S e rie s •HYUNDAI 128KX 8-bit CMOS SRAM DESCRIPTION The HY628100 is a high-speed, low power and 131,072 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit


    OCR Scan     		PDF HY628100 128Kx 85/100/120ns 1DD01-11-MAY94 ML750Ã GD0373b

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC55V16356FF-167,-150,-133 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 36-BIT SYNCHRONOUS PIPELINED BURST STATIC RAM DESCRIPTION The TC55V16356FF is a 18,874,368-bit synchronous pipelined burst static random access memory SRAM


    OCR Scan     		PDF TC55V16356FF-167 TC55V16356FF 368-bit LQFP100-P-1420-0

    zd 3.1v

    Abstract: TC55V4326FF TC55V4326FF-167
    Text: TOSHIBA TC55V4326FF-167#-150#-133 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 32-BIT SYNCHRONOUS PIPELINED BURST STATIC RAM DESCRIPTION The TC55V4326FF is a 4,194,304-bit synchronous pipelined burst static random access memory SRAM


    OCR Scan     		PDF TC55V4326FF-167 072-WORD 32-BIT TC55V4326FF 304-bit LQFP100-P-1420-0 zd 3.1v

    TC55V4376FFI-83

    Abstract: No abstract text available
    Text: TO SH IBA TC55V4376FFI-83 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 36-BIT SYNCHRONOUS FLOW THROUGH STATIC RAM DESCRIPTION The TC55V4376FFI is a 4,718,592-bit synchronous Flow through static random access memory SRAM organized as 131,072 words by 36 bits. It is designed for use as a secondary cache to support microprocessor


    OCR Scan     		PDF TC55V4376FFI-83 072-WORD 36-BIT TC55V4376FFI 592-bit LQFP100-P-1420-0 TC55V4376FFI-83