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    Untitled

    Abstract: No abstract text available
    Text: 131,072 W 0 R D S x 8 B IT ST A T IC R A M PRELIMINARY D ESCRIPTIO N The TC551001API is 1,048,576 bits static random access memory organized as 131,072 words by 8 bits using CMOS technology, and operated a single 5V power supply. Advanced circuit techniques


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    PDF TC551001API 100ns. B-108 TC551001API/AFI/AFTI/ATRI DIP32-P-600 B-109 TC551001 B-110

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC551001API/AFI/AFn/ATRI-85/10 SILICON GATE CMOS 131,072 WORD X 8 BIT STATIC RAM Description The TC551001API is a 1,048,576 bit CMOS static random access memory organized as 131,072 words by 8 bits and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an operating cur­


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    PDF TC551001API/AFI/AFn/ATRI-85/10 TC551001API

    551001

    Abstract: No abstract text available
    Text: TOSHIBA TC551001API/AFVAFTVA1KI-85L/10L SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM Description T h e T C 5 5 1 0 0 1 A P I is a 1 ,0 48,5 76 bit C M O S sta tic ra ndom acce ss m e m ory organized as 131,072 w o rd s b y 8 bits and operated from a single 5V p o w e r supply. A dvan ced circuit tech nique s provide both high speed and low p o w e r features w ith an operating cur­


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    PDF TC551001API/AFVAFTVA1KI-85L/10L 002b2b^ 551001

    Untitled

    Abstract: No abstract text available
    Text: 131,072 W O R D S x 8 BIT STATIC RAM PRELIMINARY DESCRIPTION The TC551001API is 1,048,576 bits static random access memory organized as 131,072 words by 8 bits using CMOS technology, and operated a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an operating current of 5mA/MHz Typ. and


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    PDF TC551001API 100ns. TC551001API/AFI/AFTI/ATRIâ DIP32-P-600 OP32-P-525 TC551001API/AFI/AFTI/ATRI TSOP32-P-Q82Q)

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC551001APiyAFL/AFTL/ATRL-70/85/10 LT SILICON GATE CMOS 131,072 WORD X 8 BIT STATIC RAM Description The TC551001APL is a 1,048,576 bit CMOS static random access memory organized as 131,072 words by 8 bits and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an operating cur­


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    PDF TC551001APiyAFL/AFTL/ATRL-70/85/10 TC551001APL M724fl

    TA8172AF

    Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
    Text: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16


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    PDF 015Z10 015Z11 015Z12 015Z2 015Z3 TA8172AF TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P

    TC551001APL

    Abstract: tc551001
    Text: Static RAM Capacity X6 Type No. Organization TC5564APL/AFL-15 8,192x8 64KBit TC5564APL/AFL-20 Min. Cycle Tlme ns 150 150 200 200 85 85 TC55257BPL/BFL/BSPL/BFTL/BTRL-10 100 100 85 85 TC55257BPL/BFL/BSPL/BFTL/BTRL-10L 100 100 TC55257BPI/BFI/BSPI/BFTI/BTRI-1OL


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    PDF TC5564APL/AFL-15 64KBit TC5564APL/AFL-20 TC55257BPL/BFL/BSPUBFTUBTRL-85 TC55257BPL/BFL/BSPL/BFTL/BTRL-10 TC55257BPL/BFL/BSPL/BFTL/BTRL-85L TC55257BPL/BFL/BSPL/BFTL/BTRL-10L TC55257BPI/BFI/BSPI/BFTI/BTRI-1OL TC55257CPL/CFl /CSPl7CFTLyCTRL-70 TC551001APL tc551001

    TC551001APL

    Abstract: TC551001AFL-85L
    Text: PRELIMINARY 131,072 W O R D S x 8 BIT STATIC R A M DESCRIPTIO N T h e T C 5 5 1 0 0 1 A P L is 1 ,0 4 8 ,5 7 6 b its sta tic ran dom access m em ory organized as 1 3 1 ,0 7 2 words by 8 b its u sin g C M O S technology, and operated a sin g le 5 V power supply.


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    PDF TC551001APL/AFL/AFTL/ATRLâ DIP32-P-600) OP32-P-525 TSQP32-P-0820) TSOP32-P-0820A) TC551001APL TC551001AFL-85L

    TC551001APL

    Abstract: TC551001APL10 tc551001apl-85 tc551001aFL TC551001APL-70 TC551001AFL85 TC551001APL85 TC551001AFL-10 TC551001APL70 TC551001AFL70
    Text: TOSHIBA •iGRTSMfi D 0 2 5 1 7 2 5 ÌQ /£\ i r í s g ^ D 0 X 0 )11 â i P i L ü i r m f h n i l n r e "■cgx^j MêE D (LOGIC/MEMORY) 131,072 W ORDS X PRELIMINARY 8 BIT STATIC RAM DESCRIPTION The TC551001APL is 1,048,576 bits static random access memory organized as 131,072 words by 8


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    PDF TC551001APL TC551001APL/AFL/AFTL/ATRL--70, OP32-P-525 QD221fl2 TSOP32-P-0820) TSOP32-P-0820A) TC551001APL10 tc551001apl-85 tc551001aFL TC551001APL-70 TC551001AFL85 TC551001APL85 TC551001AFL-10 TC551001APL70 TC551001AFL70