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    A14A9 Datasheets Context Search

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    K4C560838C-TCB

    Abstract: No abstract text available
    Text: K4C5608/1638C 256Mb Network-DRAM Network-DRAM Specification Version 0.2 - 1 - REV. 0.2 Jan. 2002 K4C5608/1638C 256Mb Network-DRAM Revision History Version 0.0 Oct. / 5 / 2001 - First Release Version 0.1 (Dec. / 15 / 2001) - The product name is changed to Network-DRAM


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    PDF K4C5608/1638C 256Mb Orga41 K4C560838C-TCB

    Untitled

    Abstract: No abstract text available
    Text: K4C89093AF Target 288Mb Network-DRAM-II Specification Version 0.2 - 1 - REV. 0.2 Aug. 2003 K4C89093AF Target Revision History Version 0.0 Nov. 2002 - First Release Version 0.1 (Apr. 2003) - Added 800Mbps(400Mhz) product - Changed operating temperature from Ta to Tc.


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    PDF K4C89093AF 288Mb 800Mbps 400Mhz) K4C89363AF-GC 8K/32ms 667Mbps/pin 333MHz,

    Untitled

    Abstract: No abstract text available
    Text: K4C89183AF 288Mb Network-DRAM-II Specification Version 0.11 - 1 - REV. 0.11 Apr. 2003 K4C89183AF Revision History Version 0.0 Oct. 2002 - First Release Version 0.01 (Nov. 2002) - Changed die revision from D-die to F-die - Corrected typo - Corrected DQS to DS and QS(DQS -> DS and QS) in AC timing table and timing diagram.


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    PDF K4C89183AF 288Mb 800Mbps 400Mhz) 8K/32ms 800Mbps/pin 400MHz, 667Mbps/pin 333MHz,

    IDT72V36106

    Abstract: IDT72V3686 IDT72V3696
    Text: 3.3 VOLT CMOS TRIPLE BUS SyncFIFOTM WITH BUS-MATCHING IDT72V3686 IDT72V3696 IDT72V36106 16,384 x 36 x 2 32,768 x 36 x 2 65,536 x 36 x 2 FEATURES • • • • • • • • • • • Memory storage capacity: IDT72V3686 – 16,384 x 36 x 2 IDT72V3696 – 32,768 x 36 x 2


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    PDF IDT72V3686 IDT72V3696 IDT72V36106 36-bit 18-bit 18-bit 72V3696 IDT72V36106 IDT72V3686 IDT72V3696

    Untitled

    Abstract: No abstract text available
    Text: 3.3 VOLT CMOS TRIPLE BUS SyncFIFOTM WITH BUS-MATCHING 16,384 x 36 x 2, 32,768 x 36 x 2, 65,536 x 36 x 2 FEATURES: • • • • • • • • • • • Memory storage capacity: IDT72V3686 – 16,384 x 36 x 2 IDT72V3696 – 32,768 x 36 x 2 IDT72V36106 – 65,536 x 36 x 2


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    PDF IDT72V3686 IDT72V3696 IDT72V36106 IDT72V3686 IDT72V3696 36-bit 18-bit 18-bit 72V36106

    K4C89183AF

    Abstract: No abstract text available
    Text: K4C89183AF Network-DRAM-II Specification Version 0.01 - 1 - REV. 0.01 Nov. 2002 K4C89183AF Revision History Version 0.0 Oct. 2002 - First Release Version 0.01 (Nov. 2002) - Changed die revision from D-die to F-die - Corrected typo - Corrected DQS to DS and QS(DQS -> DS and QS) in AC timing table and timing diagram.


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    PDF K4C89183AF 304-WORDS 18-BITS K4C89183AF 400mil

    IDT72V3696

    Abstract: IDT72V36106 IDT72V3686
    Text: 3.3 VOLT CMOS TRIPLE BUS SyncFIFOTM WITH BUS-MATCHING IDT72V3686 IDT72V3696 IDT72V36106 16,384 x 36 x 2 32,768 x 36 x 2 65,536 x 36 x 2 • • • FEATURES • • • • • • Memory storage capacity: IDT72V3686 – 16,384 x 36 x 2 IDT72V3696 – 32,768 x 36 x 2


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    PDF IDT72V3686 IDT72V3696 IDT72V36106 36-bit 18-bit 18-bit 72V3686 IDT72V3696 IDT72V36106 IDT72V3686

    Untitled

    Abstract: No abstract text available
    Text: K4C89093AF Preliminary 288Mb Network-DRAM-II Specification Version 0.4 - 1 - REV. 0.4 Jul. 2004 K4C89093AF Preliminary Revision History Version 0.0 Nov. 2002 - First Release Version 0.1 (Apr. 2003) - Added 800Mbps(400Mhz) product - Changed operating temperature from Ta to Tc.


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    PDF K4C89093AF 288Mb 800Mbps 400Mhz) 8K/32ms 667Mbps/pin 333MHz, 533Mbps 266MHz,

    Untitled

    Abstract: No abstract text available
    Text: K4C5608/1638M 256Mb FCRAM FCRAM Specification Version 0.0 - 1 - REV. 0.0 Oct. 2001 K4C5608/1638M 256Mb FCRAM Revision History Version 0.0 Oct. / 5 / 2001 - First Release Notice : FCRAM is a Trademark of Fujitsu Limited, Japen - 2 - REV. 0.0 Oct. 2001 K4C5608/1638M


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    PDF K4C5608/1638M 256Mb 200MHz) 154MHz 256Mx8 K4C560838M-TCB

    Untitled

    Abstract: No abstract text available
    Text: K4C89183AF Network-DRAM-II Specification Version 0.01 - 1 - REV. 0.01 Nov. 2002 K4C89183AF Revision History Version 0.0 Oct. 2002 - First Release Version 0.01 (Nov. 2002) - Changed die revision from D-die to F-die - Corrected typo - Corrected DQS to DS and QS(DQS -> DS and QS) in AC timing table and timing diagram.


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    PDF K4C89183AF 304-WORDS 18-BITS K4C89183AF 8K/32ms

    Untitled

    Abstract: No abstract text available
    Text: K4C5608/1638C 256Mb Network-DRAM Network-DRAM Specification Version 0.5 - 1 - REV. 0.5 Nov. 2002 K4C5608/1638C 256Mb Network-DRAM Revision History Version 0.0 Oct. / 5 / 2001 - First Release Version 0.1 (Dec. / 15 / 2001) - The product name is changed to Network-DRAM


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    PDF K4C5608/1638C 256Mb 366Mbps/pin 183MHz) 256Mb

    IDT72V36104

    Abstract: IDT72V3684 IDT72V3694 code of asynchronous fifo
    Text: 3.3 VOLT CMOS SyncBiFIFOTM WITH BUS-MATCHING 16,384 x 36 x 2 IDT72V3684 32,768 x 36 x 2 IDT72V3694 65,536 x 36 x 2 IDT72V36104 FEATURES • • • • • • • • Memory storage capacity: IDT72V3684 – 16,384 x 36 x 2 IDT72V3694 – 32,768 x 36 x 2 IDT72V36104 – 65,536 x 36 x 2


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    PDF IDT72V3684 IDT72V3694 IDT72V36104 72V3694 72V36104 drw36 IDT72V36104 IDT72V3684 IDT72V3694 code of asynchronous fifo

    Untitled

    Abstract: No abstract text available
    Text: 3.3 VOLT CMOS TRIPLE BUS SyncFIFOTM WITH BUS-MATCHING IDT72V3686 IDT72V3696 IDT72V36106 16,384 x 36 x 2 32,768 x 36 x 2 65,536 x 36 x 2 • • • FEATURES • • • • • • Memory storage capacity: IDT72V3686 – 16,384 x 36 x 2 IDT72V3696 – 32,768 x 36 x 2


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    PDF IDT72V3686 IDT72V3696 IDT72V36106 36-bit 18-bit 18-bit 72V3686

    K4C89183AF

    Abstract: No abstract text available
    Text: Preliminary K4C89183AF 288Mb x18 Network-DRAM-II Specification Version 0.5 - 1 - REV. 0.5 Aug. 2004 Preliminary K4C89183AF Revision History Version 0.0 Oct. 2002 - First Release Version 0.01 (Nov. 2002) - Changed die revision from D-die to F-die - Corrected typo


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    PDF K4C89183AF 288Mb 800Mbps 400Mhz) 8K/32ms 667Mbps/pin 333MHz, 600Mbps 300MHz, K4C89183AF

    Untitled

    Abstract: No abstract text available
    Text: 3.3 VOLT CMOS SyncFIFOTM WITH BUS-MATCHING 16,384 x 36 32,768 x 36 65,536 x 36 FEATURES • • • • • • • • • • Memory storage capacity: IDT72V3683 – 16,384 x 36 IDT72V3693 – 32,768 x 36 IDT72V36103 – 65,536 x 36 Clock frequencies up to 100 MHz 6.5 ns access time


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    PDF IDT72V3683 IDT72V3693 IDT72V36103 IDT72V3683 IDT72V3693 72V3683 72V3693 72V36103 drw25

    Untitled

    Abstract: No abstract text available
    Text: 3.3 VOLT CMOS SyncBiFIFOTM WITH BUS-MATCHING 16,384 x 36 x 2 IDT72V3684 32,768 x 36 x 2 IDT72V3694 65,536 x 36 x 2 IDT72V36104 • FEATURES • • • • • • • Memory storage capacity: IDT72V3684 – 16,384 x 36 x 2 IDT72V3694 – 32,768 x 36 x 2 IDT72V36104 – 65,536 x 36 x 2


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    PDF IDT72V3684 IDT72V3694 IDT72V36104 72V3684 72V3694 72V36104 drw36

    Untitled

    Abstract: No abstract text available
    Text: K4C89363AF Network-DRAM-II Specification Version 0.0 - 1 - REV. 0.0 Nov. 2002 K4C89363AF Revision History Version 0.0 Nov. 2002 - First Release - 2 - REV. 0.0 Nov. 2002 K4C89363AF 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM DESCRIPTION


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    PDF K4C89363AF 152-WORDS 36-BITS K4C89363AF K4C89363AD

    Untitled

    Abstract: No abstract text available
    Text: K4C89093AF 288Mb Network-DRAM-II Specification Version 0.6 - 1 - REV. 0.6 Jan. 2005 K4C89093AF Revision History Version 0.0 Nov. 2002 - First Release Version 0.1 (Apr. 2003) - Added 800Mbps(400Mhz) product - Changed operating temperature from Ta to Tc. - Changed capacitance of ADDR/CMD/CLK


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    PDF K4C89093AF 288Mb 800Mbps 400Mhz) VDDQ/2x95% 9183AF-AC K4C89363AF-GC 8K/32ms

    lm814

    Abstract: ID32-001
    Text: TOSHIBA TC59LM814/06BFT-22,-24,-30 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDSX4BANKSX16-BITS DOUBLE DATA RATE FAST CYCLE RAM 8,388,608-WORDSX4BANKSX8-BITS DOUBLE DATA RATE FAST CYCLE RAM DESCRIPTION TC59LM814/06BFT are a CMOS Double Data Rate Fast Cycle Random Access Memory DDR


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    PDF TC59LM814/06BFT-22 TC59LM814/06BFT TC59LM814BFT 304-words TC59LM806BFT LM814/06B FT-22 lm814 ID32-001

    lm814

    Abstract: C1948
    Text: TOSHIBA TENTATIVE TC59LM814/06BFT-22,-24,-30 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDSX4BANKSX 16-BITS DOUBLE DATA RATE FAST CYCLE RAM 8,388,608-WORDSX4BANKSX8-BITS DOUBLE DATA RATE FAST CYCLE RAM DESCRIPTION TC59LM814/06BFT are a CMOS Double Data Rate Fast Cycle Random Access Memory DDR


    OCR Scan
    PDF TC59LM814/06BFT-22 304-WORDSx4BANKSx 16-BITS 608-WORDSX4BANKSX8-BITS TC59LM814/06BFT TC59LM814BFT 304-wordsX4 TC59LM806BFT lm814 C1948

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A TC59LM814/06/02BFT-22,-24,-30 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDSX4BANKSX16-BITS DOUBLE DATA RATE FAST CYCLE RAM 8,388,608-WORDSX4BANKSX8-BITS DOUBLE DATA RATE FAST CYCLE RAM 16,777,216-WORDSX4BANKSX4-BITS DOUBLE DATA RATE FAST CYCLE RAM


    OCR Scan
    PDF TC59LM814/06/02BFT-22 TC59LM814/06/02BFT TC59LM814BFT 304-words TC59LM806BFT TC59LM802BFT LM814/06/02

    lm814

    Abstract: cyble thelia TC59 A14A9
    Text: TOSHIBA TC59LM814/06BFT-22,-24,-30 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDSX4BANKSX16-BITS DOUBLE DATA RATE FAST CYCLE RAM 8,388,608-WORDSX4BANKSX8-BITS DOUBLE DATA RATE FAST CYCLE RAM DESCRIPTION TC59LM814/06BFT are a CMOS Double Data Rate Fast Cycle Random Access Memory DDR


    OCR Scan
    PDF LM814/06B FT-22 304-WORDSX4BANKSX16-BITS 608-WORDSX4BANKSX8-BITS TC59LM814/06BFT TC59LM814BFT 304-wordsX TC59LM806BFT lm814 cyble thelia TC59 A14A9

    95c063

    Abstract: PA7F TMP95C063F TMP95C063 ti8c INTET45 B2W24-0 LRD 22
    Text: TO SHIBA TMP95C063 CMOS 16-Bit Microcontroller TMP95C063F 1. Outline and Features TMP95C063F was developed as a high-speed, advanced 16-bit microcontroller for a range of mid- to large-scale equipment. TMP95C063F is presented in a 144-pin plastic flat package. Its features are as


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    PDF TMP95C063 16-Bit TMP95C063F TMP95C063F 144-pin TLCS-90/900 16M-byte 95c063 PA7F TMP95C063 ti8c INTET45 B2W24-0 LRD 22

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A TC59LM814/06CFT-50,-55,-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDSX4BANKSX 16-BITS DOUBLE DATA RATE FAST CYCLE RAM 8,388,608-WORDSX4BANKSX8-BITS DOUBLE DATA RATE FAST CYCLE RAM DESCRIPTION TC59LM814/06CFT are a CMOS Double Data Rate Fast Cycle Random Access Memory DDR


    OCR Scan
    PDF TC59LM814/06CFT-50 304-WORDSX4BANKSX 16-BITS 608-WORDSX4BANKSX8-BITS TC59LM814/06CFT TC59LM814CFT 304-wordsX4 TC59LM806CFT