K4C560838C-TCB
Abstract: No abstract text available
Text: K4C5608/1638C 256Mb Network-DRAM Network-DRAM Specification Version 0.2 - 1 - REV. 0.2 Jan. 2002 K4C5608/1638C 256Mb Network-DRAM Revision History Version 0.0 Oct. / 5 / 2001 - First Release Version 0.1 (Dec. / 15 / 2001) - The product name is changed to Network-DRAM
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K4C5608/1638C
256Mb
Orga41
K4C560838C-TCB
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Untitled
Abstract: No abstract text available
Text: K4C89093AF Target 288Mb Network-DRAM-II Specification Version 0.2 - 1 - REV. 0.2 Aug. 2003 K4C89093AF Target Revision History Version 0.0 Nov. 2002 - First Release Version 0.1 (Apr. 2003) - Added 800Mbps(400Mhz) product - Changed operating temperature from Ta to Tc.
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K4C89093AF
288Mb
800Mbps
400Mhz)
K4C89363AF-GC
8K/32ms
667Mbps/pin
333MHz,
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Untitled
Abstract: No abstract text available
Text: K4C89183AF 288Mb Network-DRAM-II Specification Version 0.11 - 1 - REV. 0.11 Apr. 2003 K4C89183AF Revision History Version 0.0 Oct. 2002 - First Release Version 0.01 (Nov. 2002) - Changed die revision from D-die to F-die - Corrected typo - Corrected DQS to DS and QS(DQS -> DS and QS) in AC timing table and timing diagram.
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K4C89183AF
288Mb
800Mbps
400Mhz)
8K/32ms
800Mbps/pin
400MHz,
667Mbps/pin
333MHz,
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IDT72V36106
Abstract: IDT72V3686 IDT72V3696
Text: 3.3 VOLT CMOS TRIPLE BUS SyncFIFOTM WITH BUS-MATCHING IDT72V3686 IDT72V3696 IDT72V36106 16,384 x 36 x 2 32,768 x 36 x 2 65,536 x 36 x 2 FEATURES • • • • • • • • • • • Memory storage capacity: IDT72V3686 – 16,384 x 36 x 2 IDT72V3696 – 32,768 x 36 x 2
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IDT72V3686
IDT72V3696
IDT72V36106
36-bit
18-bit
18-bit
72V3696
IDT72V36106
IDT72V3686
IDT72V3696
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Untitled
Abstract: No abstract text available
Text: 3.3 VOLT CMOS TRIPLE BUS SyncFIFOTM WITH BUS-MATCHING 16,384 x 36 x 2, 32,768 x 36 x 2, 65,536 x 36 x 2 FEATURES: • • • • • • • • • • • Memory storage capacity: IDT72V3686 – 16,384 x 36 x 2 IDT72V3696 – 32,768 x 36 x 2 IDT72V36106 – 65,536 x 36 x 2
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IDT72V3686
IDT72V3696
IDT72V36106
IDT72V3686
IDT72V3696
36-bit
18-bit
18-bit
72V36106
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K4C89183AF
Abstract: No abstract text available
Text: K4C89183AF Network-DRAM-II Specification Version 0.01 - 1 - REV. 0.01 Nov. 2002 K4C89183AF Revision History Version 0.0 Oct. 2002 - First Release Version 0.01 (Nov. 2002) - Changed die revision from D-die to F-die - Corrected typo - Corrected DQS to DS and QS(DQS -> DS and QS) in AC timing table and timing diagram.
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K4C89183AF
304-WORDS
18-BITS
K4C89183AF
400mil
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IDT72V3696
Abstract: IDT72V36106 IDT72V3686
Text: 3.3 VOLT CMOS TRIPLE BUS SyncFIFOTM WITH BUS-MATCHING IDT72V3686 IDT72V3696 IDT72V36106 16,384 x 36 x 2 32,768 x 36 x 2 65,536 x 36 x 2 • • • FEATURES • • • • • • Memory storage capacity: IDT72V3686 – 16,384 x 36 x 2 IDT72V3696 – 32,768 x 36 x 2
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IDT72V3686
IDT72V3696
IDT72V36106
36-bit
18-bit
18-bit
72V3686
IDT72V3696
IDT72V36106
IDT72V3686
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Untitled
Abstract: No abstract text available
Text: K4C89093AF Preliminary 288Mb Network-DRAM-II Specification Version 0.4 - 1 - REV. 0.4 Jul. 2004 K4C89093AF Preliminary Revision History Version 0.0 Nov. 2002 - First Release Version 0.1 (Apr. 2003) - Added 800Mbps(400Mhz) product - Changed operating temperature from Ta to Tc.
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K4C89093AF
288Mb
800Mbps
400Mhz)
8K/32ms
667Mbps/pin
333MHz,
533Mbps
266MHz,
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Untitled
Abstract: No abstract text available
Text: K4C5608/1638M 256Mb FCRAM FCRAM Specification Version 0.0 - 1 - REV. 0.0 Oct. 2001 K4C5608/1638M 256Mb FCRAM Revision History Version 0.0 Oct. / 5 / 2001 - First Release Notice : FCRAM is a Trademark of Fujitsu Limited, Japen - 2 - REV. 0.0 Oct. 2001 K4C5608/1638M
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K4C5608/1638M
256Mb
200MHz)
154MHz
256Mx8
K4C560838M-TCB
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Untitled
Abstract: No abstract text available
Text: K4C89183AF Network-DRAM-II Specification Version 0.01 - 1 - REV. 0.01 Nov. 2002 K4C89183AF Revision History Version 0.0 Oct. 2002 - First Release Version 0.01 (Nov. 2002) - Changed die revision from D-die to F-die - Corrected typo - Corrected DQS to DS and QS(DQS -> DS and QS) in AC timing table and timing diagram.
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K4C89183AF
304-WORDS
18-BITS
K4C89183AF
8K/32ms
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Untitled
Abstract: No abstract text available
Text: K4C5608/1638C 256Mb Network-DRAM Network-DRAM Specification Version 0.5 - 1 - REV. 0.5 Nov. 2002 K4C5608/1638C 256Mb Network-DRAM Revision History Version 0.0 Oct. / 5 / 2001 - First Release Version 0.1 (Dec. / 15 / 2001) - The product name is changed to Network-DRAM
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K4C5608/1638C
256Mb
366Mbps/pin
183MHz)
256Mb
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IDT72V36104
Abstract: IDT72V3684 IDT72V3694 code of asynchronous fifo
Text: 3.3 VOLT CMOS SyncBiFIFOTM WITH BUS-MATCHING 16,384 x 36 x 2 IDT72V3684 32,768 x 36 x 2 IDT72V3694 65,536 x 36 x 2 IDT72V36104 FEATURES • • • • • • • • Memory storage capacity: IDT72V3684 – 16,384 x 36 x 2 IDT72V3694 – 32,768 x 36 x 2 IDT72V36104 – 65,536 x 36 x 2
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IDT72V3684
IDT72V3694
IDT72V36104
72V3694
72V36104
drw36
IDT72V36104
IDT72V3684
IDT72V3694
code of asynchronous fifo
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Untitled
Abstract: No abstract text available
Text: 3.3 VOLT CMOS TRIPLE BUS SyncFIFOTM WITH BUS-MATCHING IDT72V3686 IDT72V3696 IDT72V36106 16,384 x 36 x 2 32,768 x 36 x 2 65,536 x 36 x 2 • • • FEATURES • • • • • • Memory storage capacity: IDT72V3686 – 16,384 x 36 x 2 IDT72V3696 – 32,768 x 36 x 2
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IDT72V3686
IDT72V3696
IDT72V36106
36-bit
18-bit
18-bit
72V3686
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K4C89183AF
Abstract: No abstract text available
Text: Preliminary K4C89183AF 288Mb x18 Network-DRAM-II Specification Version 0.5 - 1 - REV. 0.5 Aug. 2004 Preliminary K4C89183AF Revision History Version 0.0 Oct. 2002 - First Release Version 0.01 (Nov. 2002) - Changed die revision from D-die to F-die - Corrected typo
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K4C89183AF
288Mb
800Mbps
400Mhz)
8K/32ms
667Mbps/pin
333MHz,
600Mbps
300MHz,
K4C89183AF
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Untitled
Abstract: No abstract text available
Text: 3.3 VOLT CMOS SyncFIFOTM WITH BUS-MATCHING 16,384 x 36 32,768 x 36 65,536 x 36 FEATURES • • • • • • • • • • Memory storage capacity: IDT72V3683 – 16,384 x 36 IDT72V3693 – 32,768 x 36 IDT72V36103 – 65,536 x 36 Clock frequencies up to 100 MHz 6.5 ns access time
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IDT72V3683
IDT72V3693
IDT72V36103
IDT72V3683
IDT72V3693
72V3683
72V3693
72V36103
drw25
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Untitled
Abstract: No abstract text available
Text: 3.3 VOLT CMOS SyncBiFIFOTM WITH BUS-MATCHING 16,384 x 36 x 2 IDT72V3684 32,768 x 36 x 2 IDT72V3694 65,536 x 36 x 2 IDT72V36104 • FEATURES • • • • • • • Memory storage capacity: IDT72V3684 – 16,384 x 36 x 2 IDT72V3694 – 32,768 x 36 x 2 IDT72V36104 – 65,536 x 36 x 2
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IDT72V3684
IDT72V3694
IDT72V36104
72V3684
72V3694
72V36104
drw36
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Untitled
Abstract: No abstract text available
Text: K4C89363AF Network-DRAM-II Specification Version 0.0 - 1 - REV. 0.0 Nov. 2002 K4C89363AF Revision History Version 0.0 Nov. 2002 - First Release - 2 - REV. 0.0 Nov. 2002 K4C89363AF 2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM DESCRIPTION
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K4C89363AF
152-WORDS
36-BITS
K4C89363AF
K4C89363AD
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Untitled
Abstract: No abstract text available
Text: K4C89093AF 288Mb Network-DRAM-II Specification Version 0.6 - 1 - REV. 0.6 Jan. 2005 K4C89093AF Revision History Version 0.0 Nov. 2002 - First Release Version 0.1 (Apr. 2003) - Added 800Mbps(400Mhz) product - Changed operating temperature from Ta to Tc. - Changed capacitance of ADDR/CMD/CLK
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K4C89093AF
288Mb
800Mbps
400Mhz)
VDDQ/2x95%
9183AF-AC
K4C89363AF-GC
8K/32ms
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lm814
Abstract: ID32-001
Text: TOSHIBA TC59LM814/06BFT-22,-24,-30 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDSX4BANKSX16-BITS DOUBLE DATA RATE FAST CYCLE RAM 8,388,608-WORDSX4BANKSX8-BITS DOUBLE DATA RATE FAST CYCLE RAM DESCRIPTION TC59LM814/06BFT are a CMOS Double Data Rate Fast Cycle Random Access Memory DDR
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TC59LM814/06BFT-22
TC59LM814/06BFT
TC59LM814BFT
304-words
TC59LM806BFT
LM814/06B
FT-22
lm814
ID32-001
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lm814
Abstract: C1948
Text: TOSHIBA TENTATIVE TC59LM814/06BFT-22,-24,-30 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDSX4BANKSX 16-BITS DOUBLE DATA RATE FAST CYCLE RAM 8,388,608-WORDSX4BANKSX8-BITS DOUBLE DATA RATE FAST CYCLE RAM DESCRIPTION TC59LM814/06BFT are a CMOS Double Data Rate Fast Cycle Random Access Memory DDR
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TC59LM814/06BFT-22
304-WORDSx4BANKSx
16-BITS
608-WORDSX4BANKSX8-BITS
TC59LM814/06BFT
TC59LM814BFT
304-wordsX4
TC59LM806BFT
lm814
C1948
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Untitled
Abstract: No abstract text available
Text: T O SH IB A TC59LM814/06/02BFT-22,-24,-30 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDSX4BANKSX16-BITS DOUBLE DATA RATE FAST CYCLE RAM 8,388,608-WORDSX4BANKSX8-BITS DOUBLE DATA RATE FAST CYCLE RAM 16,777,216-WORDSX4BANKSX4-BITS DOUBLE DATA RATE FAST CYCLE RAM
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TC59LM814/06/02BFT-22
TC59LM814/06/02BFT
TC59LM814BFT
304-words
TC59LM806BFT
TC59LM802BFT
LM814/06/02
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lm814
Abstract: cyble thelia TC59 A14A9
Text: TOSHIBA TC59LM814/06BFT-22,-24,-30 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDSX4BANKSX16-BITS DOUBLE DATA RATE FAST CYCLE RAM 8,388,608-WORDSX4BANKSX8-BITS DOUBLE DATA RATE FAST CYCLE RAM DESCRIPTION TC59LM814/06BFT are a CMOS Double Data Rate Fast Cycle Random Access Memory DDR
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LM814/06B
FT-22
304-WORDSX4BANKSX16-BITS
608-WORDSX4BANKSX8-BITS
TC59LM814/06BFT
TC59LM814BFT
304-wordsX
TC59LM806BFT
lm814
cyble
thelia
TC59
A14A9
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95c063
Abstract: PA7F TMP95C063F TMP95C063 ti8c INTET45 B2W24-0 LRD 22
Text: TO SHIBA TMP95C063 CMOS 16-Bit Microcontroller TMP95C063F 1. Outline and Features TMP95C063F was developed as a high-speed, advanced 16-bit microcontroller for a range of mid- to large-scale equipment. TMP95C063F is presented in a 144-pin plastic flat package. Its features are as
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TMP95C063
16-Bit
TMP95C063F
TMP95C063F
144-pin
TLCS-90/900
16M-byte
95c063
PA7F
TMP95C063
ti8c
INTET45
B2W24-0
LRD 22
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Untitled
Abstract: No abstract text available
Text: T O S H IB A TC59LM814/06CFT-50,-55,-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDSX4BANKSX 16-BITS DOUBLE DATA RATE FAST CYCLE RAM 8,388,608-WORDSX4BANKSX8-BITS DOUBLE DATA RATE FAST CYCLE RAM DESCRIPTION TC59LM814/06CFT are a CMOS Double Data Rate Fast Cycle Random Access Memory DDR
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TC59LM814/06CFT-50
304-WORDSX4BANKSX
16-BITS
608-WORDSX4BANKSX8-BITS
TC59LM814/06CFT
TC59LM814CFT
304-wordsX4
TC59LM806CFT
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