Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    A13 TRANSISTOR Search Results

    A13 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    A13 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Mali-400

    Abstract: No abstract text available
    Text: Allwinner Technology CO., Ltd. A13 User Manual V1.2 2013.01.08 A13 Allwinner Technology CO., Ltd. A13 Revision History Version Date Author V1.0 2012.04.16 Initial version V1.1 2012.10.25 Modify SDRAM/NAND module descriptions V1.2 2013.1.8 A13 User Manual V1.2


    Original
    Mali-400 Mali-400 PDF

    DS87C520

    Abstract: DS87C530
    Text: DALLAS SEMICONDUCTOR 4401 South Beltwood Parkway Dallas, Texas 75244-3292 972 371-4000 Date: 5/1/98 Subject: PRODUCT CHANGE NOTICE - D82202 Description: DS87C520 / DS87C530 revision change from A12 to A13


    Original
    D82202 DS87C520 DS87C530 actyywwA13, PDF

    1746-OW16

    Abstract: 1746-Im16 1746-C9 1746-NO4I ULCS61ML5 1747-AIC 1746-A7 1746-P2 1746-P4 1746-C7
    Text: ALLEN-BRADLEY SLC 500 Modular Chassis and Power Supplies Chassis Catalog Numbers: 1746-A4, -A7, -A10, and -A13 Power Supply Catalog Numbers: 1746-P1, -P2, -P3, -P4, and -P5 Product Data 88Ć213Ć19 88Ć213Ć39 SLC 500 modular chassis and power supplies provide flexibility in system


    Original
    500TM 1746-A4, 1746-P1, 10-slot, 13-slot 1746-OW16 1746-Im16 1746-C9 1746-NO4I ULCS61ML5 1747-AIC 1746-A7 1746-P2 1746-P4 1746-C7 PDF

    EM51L256A-15J

    Abstract: Etron Technology
    Text: EtronTech Em51L256A 3.3V 32K x 8 High Speed SRAM Preliminary, 3/96 Features Pin Assignment 28-Pin 300-mil DIP and SOJ • Fast Access Time: 10ns/12ns/15ns • 32K x 8 Organization A14 1 28 Vcc A12 2 27 WE# A7 3 26 A13 A6 4 25 A8 • Low Power Consumption A5


    Original
    Em51L256A 28-Pin 300-mil 10ns/12ns/15ns EM51L256A-15J Etron Technology PDF

    EM51M256A-15P

    Abstract: Em51M256A-15 Etron Etron Technology ISB12 Em51m256
    Text: EtronTech Em51M256A 3.3V I/O 32K x 8 High Speed SRAM Preliminary, 3/96 Features Pin Assignment 28-Pin 300-mil DIP and SOJ • Fast Access Time: 10ns/12ns/15ns • 32K x 8 Organization A14 1 28 Vcc A12 2 27 WE# A7 3 26 A13 A6 4 25 A8 • Advanced CMOS Process


    Original
    Em51M256A 28-Pin 300-mil 10ns/12ns/15ns 004MAX 10MAX EM51M256A-15P Em51M256A-15 Etron Etron Technology ISB12 Em51m256 PDF

    EM51256C-15P

    Abstract: em51256 Etron Technology EM51256C-10J
    Text: EtronTech Em51256C 32K x 8 High Speed SRAM Preliminary, 3/96 Features Pin Assignment 28-Pin 300-mil DIP and SOJ • Fast Access Time: 10ns/12ns/15ns • 32K x 8 Organization A14 1 28 Vcc A12 2 27 WE# A7 3 26 A13 A6 4 25 A8 • Low Power Consumption A5 5 24


    Original
    Em51256C 28-Pin 300-mil 10ns/12ns/15ns EM51256C-15P em51256 Etron Technology EM51256C-10J PDF

    A13 MARKING CODE

    Abstract: transistor a13 MARKING a13 TSC5802DCP A13 transistor a13 marking transistor diode MARKING CODE a13
    Text: TSC5802D High Voltage Fast-Switching NPN Power Transistor TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 450V BVCBO 1050V IC VCE(SAT) Features 2A 0.5V @ IC=0.7A, IB=0.14A Block Diagram ● High Voltage Capability


    Original
    TSC5802D O-251 O-252 TSC5802DCH TSC5802DCP O-251 75pcs A13 MARKING CODE transistor a13 MARKING a13 A13 transistor a13 marking transistor diode MARKING CODE a13 PDF

    power transistor Ic 4A NPN to - 251

    Abstract: HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR NPN Transistor 450v 1A transistor a13
    Text: TSC5804D High Voltage Fast-Switching NPN Power Transistor TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 450V BVCBO 1050V IC VCE(SAT) Features 4A 0.5V @ IC=1A, IB=0.2A Block Diagram ● High Voltage Capability


    Original
    TSC5804D O-251 O-252 TSC5804DCH TSC5804DCP O-251 75pcs power transistor Ic 4A NPN to - 251 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR NPN Transistor 450v 1A transistor a13 PDF

    Untitled

    Abstract: No abstract text available
    Text: TS13005CK High Voltage NPN Transistor TO-126 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC VCE SAT Features ● 3A 0.17V @ IC=1A, IB=0.25A Block Diagram No Need to Interest an hfe Value Because of Low Variable Storage-time Spread Even Though Comer


    Original
    TS13005CK O-126 TS13005CK 50pcs PDF

    Transistor A14

    Abstract: MMBTA14LT1 MMBTA13LT1
    Text: MMBTA13/14LT1 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR * High Current Gains * Monolithic Construction * Available in Both Through-Hole and Surface Mount Packages ABSOLUTE MAXIMUM RATINGS at Ta=25 Rating Unit Collector-Emitter Voltage Vces


    Original
    MMBTA13/14LT1 100uA 100mA 100MHz 40x40x1 300us MMBTA13LT1 MMBTA14LT1 Transistor A14 PDF

    Transistor A14

    Abstract: a14 Transistor MMBTA13LT1 MMBTA14LT1 a13 marking transistor
    Text: MMBTA13LT1/14LT1 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR * High Current Gains * Monolithic Construction * Available in Both Through-Hole and Surface Mount Packages ABSOLUTE MAXIMUM RATINGS at Ta=25 Rating Unit Collector-Emitter Voltage


    Original
    MMBTA13LT1/14LT1 100mA 100MHz 40x40x1 300us MMBTA13LT1 MMBTA14LT1 Transistor A14 a14 Transistor a13 marking transistor PDF

    Transistor MPSA13

    Abstract: mpsa14
    Text: MPSA13 / MPSA14 NPN DARLINGTON TRANSISTOR Features • · · High Current Gains Monolithic Construction Available in Both Through-Hole and Surface Mount Packages E A TO-92 B Mechanical Data · · · · C Case: TO-92, Molded Plastic Leads: Solderable per MIL-STD-202,


    Original
    MPSA13 MPSA14 MIL-STD-202, 100mA, 100mA 100MHz 300ms, DS11111 Transistor MPSA13 mpsa14 PDF

    mpsa14

    Abstract: No abstract text available
    Text: MPSA13 / MPSA14 NPN DARLINGTON TRANSISTOR POWER SEMICONDUCTOR Features • • • High Current Gains Monolithic Construction Available in Both Through-Hole and Surface Mount Packages E A TO-92 B Mechanical Data • • • • C Case: TO-92, Molded Plastic


    Original
    MPSA13 MPSA14 MIL-STD-202, 100mA, 100mA 100MHz DS11111 mpsa14 PDF

    mpsa14

    Abstract: MPS-A13 pnp MPSA65 MPS-A14 MPS-A65 Xl03 mpsa66 T0-92A MPS-A13 MPS-A66
    Text: MPS MPS MPS MPS THE MPS-A1 5 , MPS-A14 NPN AND MPS-A 6 5 , MPS-A66 (PNP) ARE SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS FOR AF AMPLIFIERS REQUIRING HIGH INPUT IMPEDANCE. A13 A14 A65 A66 CASE T 0 -9 2 A EBC ABSOLUTE MAXIMUM RATINGS MPS-A13(HPN) MPS-A14(NPN.)


    OCR Scan
    MPS-A131 MPS-A14 MPS-A65, MPS-A66 T0-92A MPS-A65 mps-a14 kps-a66 1500c 100mA mpsa14 MPS-A13 pnp MPSA65 Xl03 mpsa66 MPS-A13 MPS-A66 PDF

    MPSA13M

    Abstract: MPSA DARLINGTON MPS-A13 MPS-A14 MPSA 13
    Text: MPS-A13 SILICON MPS-A14 NPN SILICON DARLINGTON TRANSISTORS NPN SILICON DARLINGTON AMPLIFIER TRANSISTORS . . . designed for pre-amplifier input applications requiring high input impedance. • High D C Current Gain @ lc - 10 m A d c hFE = 5,000 (Min) M P S-A 1 3


    OCR Scan
    MPS-A13 MPS-A14 100/uAdc MPSA13M MPSA DARLINGTON MPS-A13 MPS-A14 MPSA 13 PDF

    A14 marking SOT

    Abstract: A13 MARKING CODE A12 marking A12n MARKING 3W SOT23 FMMT-A12 a13 marking sot23 FMMT-A13 marking code AD transistor MARKING A12n
    Text: FERRANTI * semiconductors FMMT-A12 FMMT-A13 FM M T-AÎ4 NPN Silicon Darlington Transistors DESCRIPTION These NPN silicon darlington am plifier transistors o ffe r high gain and input impedance fo r pre-am plifier input applications. Encapsulated in the popular SOT-23 package these devices


    OCR Scan
    FMMT-A12 FIWIWT-A13 OT-23 FMMT-A13, FMMT-A13 FMMT-A14 BCW67A FMMT-A20 A14 marking SOT A13 MARKING CODE A12 marking A12n MARKING 3W SOT23 a13 marking sot23 marking code AD transistor MARKING A12n PDF

    MPS A13 transistor

    Abstract: transistor mps 13 MPS-A13 MPS-A14 Transistor MPSA13 MPSA13
    Text: Silicon r - 'x j Darlington Transistor M P S -A 1 3 M P S -A 1 4 The General Electric MPS-A13, A 14 are Silicon Planar Epi­ taxial Passivated NPN Darlington Transistors designed for preamplifier input applications where high impedance is a requirement. absolute maximum ratings: TA = 25°C unless otherwise sp


    OCR Scan
    MPS-A13 MPS-A14 MPS-A13, 10Vdc) MPS A13 transistor transistor mps 13 MPS-A14 Transistor MPSA13 MPSA13 PDF

    MPS-A13

    Abstract: MPS-A14
    Text: 111 E SOLID STATE 3875081 G E SOLID STATE DE~| 3ñ?5Qñl □ □IT'ifi? 1 01E 17987 D Signal Transistors MPS-A13, MPS-A14 T '¿< 7 « 2 7 Silicon Darlington Transistors TO-92 The GE/RCA M P S-A 13 and A14 are planar epitaxial passiva­ ted N PN silicon Darlington transistors designed for preampli­


    OCR Scan
    017cià MPS-A13, MPS-A14 CAMPS-A13andA14areplanarepitaxialpassiva- MPS-A13 100kHz) 100kQ MPS-A14 PDF

    MPSA13

    Abstract: No abstract text available
    Text: MPS MPS MPS MPS THE MPS-A15» MPS-A14 NPN AND MPS-A6 5 , MPS-A66 (PNP) ARE SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS FOR AF AMPLIFIERS REQUIRING HIGH INPUT IMPEDANCE. A13 A14 A65 A66 CASE T O -9 2 A EBC ABSOLUTE MAXIMUM RATINGS F o r p - n p d .vice i, v o lu a * and currant v a lu « a n n e ^ a llx .


    OCR Scan
    MPS-A15Â MPS-A14 MPS-A66 MPS-A13 MPS-A14 mps-a65 mps-a66 1500c 100kHz MPS-A13, MPSA13 PDF

    27256 EPROM

    Abstract: EVQV
    Text: t 28 — A I2 — 2 27 — A7 — 3 2 6 -A13 V dd CMOS 32,768-Word by 8-Bit LSI Static ROM A6 — 4 25 -AS A9 — 9 24 -A 9 Features: A4 — 6 23 - AH A3 — 7 22 -O E /O E A2 — 8 21 -A IO 9 2 0 - 5 E /C E • A synchronous operation


    OCR Scan
    CDM53256 ------A13 28-pin CDM53256 92CM-3S216R1 27256 EPROM EVQV PDF

    Untitled

    Abstract: No abstract text available
    Text: g £ SOLID STATE 3875081 ~ G E SOLID Öl DE | 3ö?SGöl D017TÖ7 1 STATE 01E 17987 D _ !_ !_ !_ Signal Transistors MPS-A13, MPS-A14 T ,2 <7-27 Silicon Darlington Transistors TO-92 T h e G E /R C A M P S -A 1 3 a n d A 1 4 a re p la n a r e p ita x ia l p assivate d N PN silico n D a rlin g to n tra n s is to rs d e sig n e d fo r p re a m p lifie r in p u t a p p lic a tio n s w h e re h ig h im p e d a n c e is a


    OCR Scan
    D017T MPS-A13, MPS-A14 MPS-A13 MPS-A14 100kHz) 100kQ 300ps PDF

    transistor a13

    Abstract: MARKING WL MPSA13 MPSA14
    Text: TRANSYS MPSA13 / MPSA14 ELECTRONICS NPN DARLINGTON TRANSISTOR LIMITED Features High Current Gains Monolithic Construction Available in Both Through-Hole and Surface Mount Packages TO-92 Mechanical Data_ Case: TO-92, Molded Plastic Leads: Solderable per MIL-STD-202,


    OCR Scan
    MPSA13 MPSA14 MIL-STD-202, MPSA14 100mA, 100mA 100MHz transistor a13 MARKING WL PDF

    MPSA14

    Abstract: MPSA13 impsa13
    Text: 3IÌB5 MPSA13 / MPSA14 NPN DARLINGTON TRANSISTOR y LITEM ZI POWER SEMICONDUCTOR Features • • • High Current Gains Monolithic Construction Available in Both Through-Hole and Surface Mount Packages « -E -* TO-92 Mechanical Data_ • • •


    OCR Scan
    MPSA13 MPSA14 MIL-STD-202, MPSA14 100mA, 100mA 100MHz 300ns, impsa13 PDF

    Untitled

    Abstract: No abstract text available
    Text: MPSA13 / MPSA14 NPN DARLINGTON TRANSISTOR Features KM High Current Gains Monolithic Construction Available in Both Through-Hole and Surface Mount Packages TO-92 Mechanical Data_ • • • • Case: TO -92, Molded Plastic Leads: Solderable per M IL-STD-202,


    OCR Scan
    MPSA13 MPSA14 IL-STD-202, 100mA, 100mA 100MHz 300ns, DS11111 PDF