Mali-400
Abstract: No abstract text available
Text: Allwinner Technology CO., Ltd. A13 User Manual V1.2 2013.01.08 A13 Allwinner Technology CO., Ltd. A13 Revision History Version Date Author V1.0 2012.04.16 Initial version V1.1 2012.10.25 Modify SDRAM/NAND module descriptions V1.2 2013.1.8 A13 User Manual V1.2
|
Original
|
PDF
|
Mali-400
Mali-400
|
sy7208
Abstract: H27UBG8 H27UBG8T u7a TV capacitor rtl8188 axp209
Text: A13-OLinuXino and A13-OLinuXino-WIFI Open-source single-board Android 4.0 mini-computer USER’S MANUAL Revision F, March 2013 Designed by OLIMEX Ltd, 2012 All boards produced by Olimex LTD are ROHS compliant OLIMEX 2012 A13-OLinuXino user's manual DISCLAIMER
|
Original
|
PDF
|
A13-OLinuXino
A13-OLinuXino-WIFI
sy7208
H27UBG8
H27UBG8T
u7a TV capacitor
rtl8188
axp209
|
5021D-A13
Abstract: Fiber Optic Delay Lines
Text: 5021D-A13 3 GHz, 35 µs Max External Fiber Delay Line System DATASHEET | NOVEMBER 2013 MICROWAVE The 5021D-A13, 3 GHz fiber optic delay line delivers unmatched performance for radar testing, signal processing, phased array antennas and phase noise testing. This rugged device eliminates
|
Original
|
PDF
|
5021D-A13
5021D-A13,
Fiber Optic Delay Lines
|
Untitled
Abstract: No abstract text available
Text: FMKA130 FMKA130 Features • • • Compact Surface Mount with J-bend Leads SMA 1.2 Watt Power Dissipation Package 1.0 Ampere, Forward Voltage Less than 600mV SMA (DO-214AC) Color Band Denotes Cathode Mark: A13 Schottky Rectifier Absolute Maximum Ratings *
|
Original
|
PDF
|
FMKA130
600mV
DO-214AC)
|
FMKA130
Abstract: No abstract text available
Text: FMKA130 FMKA130 Features • Compact Surface Mount with J-bend Leads SMA • 1.2 Watt Power Dissipation Package • 1.0 Ampere, Forward Voltage Less than 600mV SMA (DO-214AC) Color Band Denotes Cathode Mark: A13 Schottky Rectifier Absolute Maximum Ratings *
|
Original
|
PDF
|
FMKA130
600mV
DO-214AC)
FMKA130
|
FMKA130
Abstract: No abstract text available
Text: FMKA130 FMKA130 Features • Compact Surface Mount with J-bend Leads SMA • 1.2 Watt Power Dissipation Package • 1.0 Ampere, Forward Voltage Less than 600mV SMA (DO-214AC) Color Band Denotes Cathode Mark: A13 Schottky Rectifier Absolute Maximum Ratings *
|
Original
|
PDF
|
FMKA130
600mV
DO-214AC)
FMKA130
|
Untitled
Abstract: No abstract text available
Text: - PROPRIETARY INFORMATION - HIGH POWER QUADRATURE HYBRID MODEL DQS-A13 3:1 BANDWIDTH 30 - 90 MHz SPECIFICATIONS Operating Frequency: Insertion Loss: Isolation: 30 - 90 MHz 0.3 dB Typ / 0.6 dB (Max) 23 dB (Typ)/20 dB (Min) Amplitude Unbalance: 1.1 dB (Typ) / 1.7 dB (Max)
|
Original
|
PDF
|
DQS-A13
|
Quadrature Hybrid
Abstract: DQS-A13
Text: HIGH POWER QUADRATURE HYBRID MODEL DQS-A13 3:1 BANDWIDTH 30 - 90 MHz SPECIFICATIONS Operating Frequency: Insertion Loss: Isolation: 30 - 90 MHz 0.3 dB Typ / 0.6 dB (Max) 23 dB (Typ)/20 dB (Min) Amplitude Unbalance: 1.1 dB (Typ) / 1.7 dB (Max) Phase Unbalance:
|
Original
|
PDF
|
DQS-A13
Quadrature Hybrid
DQS-A13
|
752A13
Abstract: Endevco accelerometer 752A12 3061A-120 752A12 oasis Endevco 2792B endevco 133 P1451 4416B 2792B
Text: i-TEDS Accelerometer ENDEVCO MODEL 752A12/A13 MODEL 752A12 and 752A13 • • • • • Built-In IEEE P1451.4 TEDS Hermetically Sealed, Rugged Exceptional Resolution Wide Bandwidth Flat to 10 kHz Aerospace, Automotive and General Laboratory Applications
|
Original
|
PDF
|
752A12/A13
752A12
752A13
P1451
mos000
752A13
Endevco accelerometer 752A12
3061A-120
oasis
Endevco 2792B
endevco 133
4416B
2792B
|
1355046
Abstract: 114-18050 APPLICATION SPECIFICATION 114-18050
Text: 8 7 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT2014 RELEASED FOR PUBLICATION 6 4 5 1 2 3 2014 REVISIONS ALL RIGHTS RESERVED. Tyco Electronics AMP GmbH P LTR DESCRIPTION A12 A13 DESIGN 1 Ausfuehrung 1 A14 A15 D # 0.5 X10CrNi18-8 7 DWN APVD Design 2 added 28SEP12
|
Original
|
PDF
|
13NOV13
25APR2014
26MAY2014
28SEP12
X10CrNi18-8
09JUN99
1355046
114-18050
APPLICATION SPECIFICATION 114-18050
|
3061A-120
Abstract: Endevco accelerometer 752A12 752A12 CRYSTAL 433 4990a oasis 752A13 2981-12 3061a 2775B
Text: Model 752A12 / A13 ISOTRON accelerometer Features Description • Built-in IEEE P1451.4 TEDS • Hermetically sealed, rugged • Exceptional resolution • Wide bandwidth flat to 10 kHz • Aerospace, automotive and general laboratory applications The Endevco model 752A is a lightweight piezoelectric
|
Original
|
PDF
|
752A12
P1451
CA92675
3061A-120
Endevco accelerometer 752A12
CRYSTAL 433
4990a
oasis
752A13
2981-12
3061a
2775B
|
OEU86
Abstract: AS28F128J3APBG Numonyx CE013
Text: PEM AS28F128J3A Q-Flash Plastic Encapsulated Microcircuit PIN ASSIGNMENT 128Mb, x8 and x16 Q-FLASH Memory Even Sectored, Single Bit per Cell Architecture • • • • • • • • • • • • 2 3 4 5 6 7 8 A1 A6 A8 VPEN A13 VCC A18 A22 A2 VSS A9
|
Original
|
PDF
|
AS28F128J3A
128Mb,
J3-65nm
OEU86
AS28F128J3APBG
Numonyx
CE013
|
1746-OW16
Abstract: 1746-Im16 1746-C9 1746-NO4I ULCS61ML5 1747-AIC 1746-A7 1746-P2 1746-P4 1746-C7
Text: ALLEN-BRADLEY SLC 500 Modular Chassis and Power Supplies Chassis Catalog Numbers: 1746-A4, -A7, -A10, and -A13 Power Supply Catalog Numbers: 1746-P1, -P2, -P3, -P4, and -P5 Product Data 88Ć213Ć19 88Ć213Ć39 SLC 500 modular chassis and power supplies provide flexibility in system
|
Original
|
PDF
|
500TM
1746-A4,
1746-P1,
10-slot,
13-slot
1746-OW16
1746-Im16
1746-C9
1746-NO4I
ULCS61ML5
1747-AIC
1746-A7
1746-P2
1746-P4
1746-C7
|
32-PIN
Abstract: DS1249Y
Text: DS1249Y DS1249Y 2048K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power NC 1 32 VCC A16 2 31 A15 A14 3 30 A17 A12 4 29 WE A7 5 28 A13 • Low-power CMOS A6 6 27 A8 • JEDEC standard 32–pin DIP package
|
Original
|
PDF
|
DS1249Y
2048K
DS1249Y
32-PIN
32-PIN
|
|
|
W6811
Abstract: No abstract text available
Text: W6811 SINGLE-CHANNEL VOICEBAND CODEC 5V ANALOG, 3V DIGITAL Data Sheet Revision A13 -1- W6811 1. GENERAL DESCRIPTION The W6811 is a general-purpose single channel PCM CODEC with pin-selectable u-Law or A-Law companding. The device is compliant with the ITU G.712 specification. It operates off of separated
|
Original
|
PDF
|
W6811
W6811
24-pin
|
ds1630AB-120
Abstract: DS1630 DS1630Y DS1630Y100 EEPROM 28256 DS1630AB DS1630Y70
Text: DS1630Y/AB DS1630Y/AB Partitionable 256K NV SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A14 1 28 VCC A12 2 27 WE • Directly A7 3 26 A13 A6 4 25 A8 • Write protects selected blocks of memory when pro-
|
Original
|
PDF
|
DS1630Y/AB
DS1630Y/AB
ds1630AB-120
DS1630
DS1630Y
DS1630Y100
EEPROM 28256
DS1630AB
DS1630Y70
|
mpsa14
Abstract: MPS-A13 pnp MPSA65 MPS-A14 MPS-A65 Xl03 mpsa66 T0-92A MPS-A13 MPS-A66
Text: MPS MPS MPS MPS THE MPS-A1 5 , MPS-A14 NPN AND MPS-A 6 5 , MPS-A66 (PNP) ARE SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS FOR AF AMPLIFIERS REQUIRING HIGH INPUT IMPEDANCE. A13 A14 A65 A66 CASE T 0 -9 2 A EBC ABSOLUTE MAXIMUM RATINGS MPS-A13(HPN) MPS-A14(NPN.)
|
OCR Scan
|
PDF
|
MPS-A131
MPS-A14
MPS-A65,
MPS-A66
T0-92A
MPS-A65
mps-a14
kps-a66
1500c
100mA
mpsa14
MPS-A13 pnp
MPSA65
Xl03
mpsa66
MPS-A13
MPS-A66
|
MPSA13M
Abstract: MPSA DARLINGTON MPS-A13 MPS-A14 MPSA 13
Text: MPS-A13 SILICON MPS-A14 NPN SILICON DARLINGTON TRANSISTORS NPN SILICON DARLINGTON AMPLIFIER TRANSISTORS . . . designed for pre-amplifier input applications requiring high input impedance. • High D C Current Gain @ lc - 10 m A d c hFE = 5,000 (Min) M P S-A 1 3
|
OCR Scan
|
PDF
|
MPS-A13
MPS-A14
100/uAdc
MPSA13M
MPSA DARLINGTON
MPS-A13
MPS-A14
MPSA 13
|
Untitled
Abstract: No abstract text available
Text: FEATURES UNPOLARIZED, SIZES 10 THROUGH 60 POSITIONS AVAILABLE. "SINGLE BEAM" CONTACT DESIGN FOR EASIER MATING AND LOWER COST. ACCEPTS 26 AND 28 AWG .050 PITCH RIBBON CABLE, SEE PAGE D1 . STRAIN RELIEFS AND PULL TABS ARE AVAILABLE, SEE PAGES A13 AND A 14.
|
OCR Scan
|
PDF
|
|
DS1630AB-120
Abstract: No abstract text available
Text: DS1630Y/AB DALLAS DS1630Y/AB SEMICONDUCTOR Partitionable 256K NV SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power Vcc WE • Data is automatically protected during power loss A13 • Directly replaces 32K x 8 volatile static RAM or
|
OCR Scan
|
PDF
|
DS1630Y/AB
DS1630Y)
DS1630Y/AB
34-PIN
68-pin
2bl4130
DS1630AB-120
|
Untitled
Abstract: No abstract text available
Text: DS 1250YL/BL DALLAS DS1250YL/BL 4096K Nonvolatile SRAM SEMICONDUCTOR NOT RECOMMENDED FOR NEW DESIGNS. SEE DS1250Y/AB DATA SHEET. FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A18 A17 A14 A13 A12 A11 A10 A9 A8
|
OCR Scan
|
PDF
|
1250YL/BL
DS1250YL/BL
4096K
DS1250Y/AB
DS1250YL)
DS1250BL)
001LS23
DS1250YL7BL
DS1250YL/BL
34-PIN
|
Untitled
Abstract: No abstract text available
Text: DALLAS SEMICONDUCTOR DS1613C Partitionable 256K SmartSocket PIN ASSIGNM ENT FEATURES • Accepts standard 32K x 8, CMOS static RAMs • Embedded lithium energy cell retains RAM data A14 1 28 A12 2 27 WE 3 26 A13 6 23 A11 7 22 • Unconditionally write protects all of memory when
|
OCR Scan
|
PDF
|
DS1613C
28-PIN
A11-A14
DS1613C
28-PIN
010TN
|
Untitled
Abstract: No abstract text available
Text: DS1613C DALLAS SEMICONDUCTOR DS1613C Partitionable 256K SmartSocket FEATURES PIN ASSIGNMENT • Accepts standard 32K x 8, CMOS static RAMs • Embedded lithium energy cell retains RAM data A14 1 28 A12 2 27 WE 3 26 A13 4 25 5 24 • Unconditionally write protects all of memory when
|
OCR Scan
|
PDF
|
DS1613C
28-PIN
2bl4130
|
EEPROM 28256
Abstract: smt LDR 34-PIN
Text: DS1730Y DALLAS SEMICONDUCTOR DS1730Y 3-V olt Partitionable 256K NV SRAM PIN ASSIGNM ENT FEATURES • 10 years minimum data retention in the absence of external power v cc WE • Data is automatically protected during power loss A13 • Directly replaces 32K x 8 volatile static RAM or
|
OCR Scan
|
PDF
|
DS1730Y
28-pin
DS1730Y
34-PIN
68-pin
PLCC34P-SMT-3
HIS-40001-04
PLCC-34-SMT
EEPROM 28256
smt LDR
|
