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    A114 MOSFET Search Results

    A114 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    A114 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    WDFN8

    Abstract: NTTFS3A08P
    Text: NTTFS3A08P Product Preview Power MOSFET −20 V, −14 A, Single P−Channel, m8FL Features • Ultra Low RDS on to Minimize Conduction Losses • m8FL 3.3 x 3.3 x 0.8 mm for Space Saving and Excellent Thermal Conduction • ESD Protection Level of 5 kV per JESD22−A114


    Original     		PDF NTTFS3A08P JESD22-A114 NTTFS3A08P/D WDFN8

    Untitled

    Abstract: No abstract text available
    Text: NTLUD3A50PZ Power MOSFET −20 V, −5.6 A, mCoolt Dual P−Channel, 2.0x2.0x0.55 mm UDFN Package Features • UDFN Package with Exposed Drain Pads for Excellent Thermal • • • Conduction Low RDS on Low Profile UDFN 2.0x2.0x0.55 mm for Board Space Saving


    Original     		PDF NTLUD3A50PZ NTLUD3A50PZ/D

    NTTFS3A08PZTAG

    Abstract: No abstract text available
    Text: NTTFS3A08PZ Power MOSFET −20 V, −15 A, Single P−Channel, m8FL Features • Ultra Low RDS on to Minimize Conduction Losses • m8FL 3.3 x 3.3 x 0.8 mm for Space Saving and Excellent Thermal Conduction • ESD Protection Level of 5 kV per JESD22−A114


    Original     		PDF NTTFS3A08PZ JESD22-A114 NTTFS3A08P/D NTTFS3A08PZTAG

    Untitled

    Abstract: No abstract text available
    Text: NTTFS3A08P Power MOSFET −20 V, −15 A, Single P−Channel, m8FL Features • Ultra Low RDS on to Minimize Conduction Losses • m8FL 3.3 x 3.3 x 0.8 mm for Space Saving and Excellent Thermal Conduction • ESD Protection Level of 5 kV per JESD22−A114


    Original     		PDF NTTFS3A08P JESD22-A114 NTTFS3A08P/D

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: Order from RF Marketing Rev. 3, 10/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for pulsed wideband large - signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are


    Original     		PDF MRF6V2010N MRF6V2010NB

    transistor A114

    Abstract: a113 bolt AN1955 AN3263 MRF6V2010N A113 A114 A115 C101 JESD22
    Text: Freescale Semiconductor Technical Data Document Number: Order from RF Marketing Rev. 4, 12/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for pulsed wideband large - signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are


    Original     		PDF MRF6V2010N MRF6V2010NB transistor A114 a113 bolt AN1955 AN3263 A113 A114 A115 C101 JESD22

    221D-03

    Abstract: No abstract text available
    Text: NDF11N50Z, NDP11N50Z Product Preview N-Channel Power MOSFET 500 V, 0.52 W Features • • • • • Low ON Resistance Low Gate Charge Zener Diode−protected Gate 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant http://onsemi.com


    Original     		PDF NDF11N50Z, NDP11N50Z JESD22-A114) NDF11N50Z/D 221D-03

    Untitled

    Abstract: No abstract text available
    Text: NTLJS3A18PZ Product Preview Power MOSFET −20 V, −8.4 A, mCoolt Single P−Channel, 2.0x2.0x0.8 mm WDFN Package http://onsemi.com Features • WDFN Package with Exposed Drain Pads for Excellent Thermal • • • • Conduction Low Profile WDFN 2.0x2.0x0.8 mm for Board Space Saving


    Original     		PDF NTLJS3A18PZ NTLJS3A18PZ/D

    Untitled

    Abstract: No abstract text available
    Text: PI3PD22924C Ultra Small, Low-Input Voltage, Low RON Load Switch Features Description ÎÎIntegrated Single Load Switch The PI3PD22924C is a small, ultra-low rON load switch with controlled turn on. The device contains N-channel MOSFETs that can operate over an input voltage range of 0.75V to 3.6V.


    Original     		PDF PI3PD22924C PI3PD22924C

    Untitled

    Abstract: No abstract text available
    Text: PI3PD22924C Ultra Small, Low-Input Voltage, Low RON Load Switch Features Description ÎÎIntegrated Single Load Switch The PI3PD22924C is a small, ultra-low rON load switch with controlled turn on. The device contains N-channel MOSFETs that can operate over an input voltage range of 0.75V to 3.6V.


    Original     		PDF PI3PD22924C PI3PD22924C

    MRF6V2300N

    Abstract: MRF6V2300NB AN3263 A113 A114 A115 AN1955 C101 JESD22
    Text: Freescale Semiconductor Technical Data Document Number: Order from RF Marketing Rev. 4, 10/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for pulsed wideband large - signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are


    Original     		PDF MRF6V2300N MRF6V2300NB MRF6V2300NB AN3263 A113 A114 A115 AN1955 C101 JESD22

    hatching machine

    Abstract: MRF6V2150NB MRF6V2300N AN3263 MRF6V2300NB A114 A115 AN1955 C101 JESD22
    Text: Freescale Semiconductor Technical Data Document Number: Order from RF Marketing Rev. 6, 10/2006 RF Power Field - Effect Transistor MRF6V2150N MRF6V2150NB N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for wideband large - signal output and driver applications


    Original     		PDF MRF6V2150N MRF6V2150NB MRF6V2150N hatching machine MRF6V2150NB MRF6V2300N AN3263 MRF6V2300NB A114 A115 AN1955 C101 JESD22

    Untitled

    Abstract: No abstract text available
    Text: NDF06N62Z N-Channel Power MOSFET 620 V, 1.2 W Features • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com VDSS RDS ON (MAX) @ 3 A


    Original     		PDF NDF06N62Z NDF06N62Z/D

    Untitled

    Abstract: No abstract text available
    Text: PI3PD22925C Ultra Small, Low-Input Voltage, Low RON Load Switch Features Description ÎÎIntegrated Single Load Switch The PI3PD22925C is a small, ultra-low rON load switch with controlled turn on. The device contains N-channel MOSFETs that can operate over an input voltage range of 0.75V to 3.6V.


    Original     		PDF PI3PD22925C PI3PD22925C

    NDF10N62Z

    Abstract: No abstract text available
    Text: NDF10N62Z N-Channel Power MOSFET 620 V, 0.75 W Features • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com VDSS


    Original     		PDF NDF10N62Z NDF10N62Z/D NDF10N62Z

    Untitled

    Abstract: No abstract text available
    Text: NDF06N62Z N-Channel Power MOSFET 620 V, 1.2 W Features • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com VDSS RDS ON (MAX) @ 3 A


    Original     		PDF NDF06N62Z 22-A114) NDF06N62Z/D

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: Order from RF Marketing Rev. 7, 12/2006 RF Power Field - Effect Transistor MRF6V2150N MRF6V2150NB N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for wideband large - signal output and driver applications


    Original     		PDF MRF6V2150N MRF6V2150NB

    Untitled

    Abstract: No abstract text available
    Text: NDF04N60ZH Product Preview N-Channel Power MOSFET 600 V, 2.0 W Features • • • • Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com VDSS RDS ON (MAX) @ 2 A


    Original     		PDF NDF04N60ZH NDF04N60Z/D

    MRF6V2300NB

    Abstract: transistor A113 MRF6V2300N
    Text: Freescale Semiconductor Technical Data Document Number: Order from RF Marketing Rev. 5, 12/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for pulsed wideband large - signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are


    Original     		PDF MRF6V2300N MRF6V2300NB transistor A113

    NIPPON CAPACITORS

    Abstract: capacitor mttf 100B120JP 100B180JP
    Text: Freescale Semiconductor Technical Data Rev. 2, 1/2005 RF Power Field Effect Transistors MRF5S9100NR1 MRF5S9100NBR1 MRF5S9100MR1 MRF5S9100MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with


    Original     		PDF MRF5S9100NBR1 MRF5S9100MR1 MRF5S9100MBR1 MRF5S9100NR1 NIPPON CAPACITORS capacitor mttf 100B120JP 100B180JP

    NDF10N60ZG

    Abstract: 221D A114 JESD22 NDP10N60Z
    Text: NDF10N60Z, NDP10N60Z N-Channel Power MOSFET 600 V, 0.75 W Features • • • • • Low ON Resistance Low Gate Charge Zener Diode−protected Gate 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com


    Original     		PDF NDF10N60Z, NDP10N60Z NDF10N60Z/D NDF10N60ZG 221D A114 JESD22 NDP10N60Z

    ndf05n50

    Abstract: No abstract text available
    Text: NDF05N50ZH Product Preview N-Channel Power MOSFET 500 V, 1.5 W Features • • • • Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com VDSS RDS ON (MAX) @ 2.2 A


    Original     		PDF NDF05N50ZH NDF05N50ZH/D ndf05n50

    Untitled

    Abstract: No abstract text available
    Text: NDF10N60ZH Product Preview N-Channel Power MOSFET 600 V, 0.75 W Features • • • • • Low ON Resistance Low Gate Charge Zener Diode−protected Gate 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com


    Original     		PDF NDF10N60ZH NDF10N60ZH/D

    221D

    Abstract: A114 mosfet 620
    Text: NDF06N62Z, NDP06N62Z N-Channel Power MOSFET 620 V, 0.98 W, Features • • • • Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb−Free and RoHS Compliant http://onsemi.com ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise noted


    Original     		PDF NDF06N62Z, NDP06N62Z NDF06N62Z 22-A114) NDF06N62Z/D 221D A114 mosfet 620