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    onsemi NDF10N60ZH

    MOSFET N-CH 600V 10A TO220FP
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    Rochester Electronics NDF10N60ZH 104,120 1
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    Rochester Electronics LLC NDF10N60ZH

    MOSFET N-CH 600V 10A TO220FP
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    NDF10N60ZH Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NDF10N60ZH ON Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 10A TO-220FP Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: NDF10N60ZH Product Preview N-Channel Power MOSFET 600 V, 0.75 W Features • • • • • Low ON Resistance Low Gate Charge Zener Diode−protected Gate 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com


    Original     		PDF NDF10N60ZH NDF10N60ZH/D

    Untitled

    Abstract: No abstract text available
    Text: NDF10N60Z N-Channel Power MOSFET 600 V, 0.75 W Features • • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested 100% Rg Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com


    Original     		PDF NDF10N60Z NDF10N60Z/D

    Untitled

    Abstract: No abstract text available
    Text: NDF10N60Z N-Channel Power MOSFET 600 V, 0.75 W Features • • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested 100% Rg Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com


    Original     		PDF NDF10N60Z NDF10N60Z/D

    NDF10N60ZG

    Abstract: NDF10N60ZH NDF10N60Z
    Text: NDF10N60Z N-Channel Power MOSFET 600 V, 0.75 W Features • • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested 100% Rg Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com


    Original     		PDF NDF10N60Z JESD22-A114) NDF10N60Z/D NDF10N60ZG NDF10N60ZH

    Untitled

    Abstract: No abstract text available
    Text: NDF10N60Z, NDP10N60Z N-Channel Power MOSFET 600 V, 0.75 W Features • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com


    Original     		PDF NDF10N60Z, NDP10N60Z JESD22-A114) NDF10N60Z/D

    NDF10N60ZG

    Abstract: No abstract text available
    Text: NDF10N60Z N-Channel Power MOSFET 600 V, 0.75 W Features • • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested 100% Rg Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com


    Original     		PDF NDF10N60Z JESD22-A114) NDF10N60Z/D NDF10N60ZG

    NDF10N60ZG

    Abstract: 221AH H1AA1
    Text: NDF10N60Z N-Channel Power MOSFET 600 V, 0.75 W Features • • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested 100% Rg Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com


    Original     		PDF NDF10N60Z JESD22-A114) NDF10N60Z/D NDF10N60ZG 221AH H1AA1