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    A113 TRANSISTOR Search Results

    A113 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    A113 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LTC MTBF

    Abstract: transistor A110 transistor j-fet 245c transistor A113 MIL-STD-690 transistor mark code 3015 up board exam date sheet 2012 in-process quality inspections 690B A113
    Text: RELIABILITY ASSURANCE RELIABILITY ASSURANCE PROGRAM INTRODUCTION In 1981 Linear Technology Corporation was founded with the intention of becoming a world leader in high performance analog semiconductors. To achieve this goal Linear Technology Corporation committed itself


    Original     		PDF MIL-STD-883 5000ppm LTC MTBF transistor A110 transistor j-fet 245c transistor A113 MIL-STD-690 transistor mark code 3015 up board exam date sheet 2012 in-process quality inspections 690B A113

    transistor A113

    Abstract: 400X 690B A102-B A110 A113 INCOMING RAW MATERIAL INSPECTION procedure INCOMING RAW MATERIAL INSPECTION report transistor a110 DATAPACK/RHFLVDS31AD2V
    Text: RELIABILITY ASSURANCE PROGRAM RELIABILITY ASSURANCE PROGRAM INTRODUCTION In 1981 Linear Technology Corporation was founded with the intention of becoming a world leader in high performance analog semiconductors. To achieve this goal Linear Technology Corporation committed itself


    Original     		PDF MIL-STD-883 5000ppm transistor A113 400X 690B A102-B A110 A113 INCOMING RAW MATERIAL INSPECTION procedure INCOMING RAW MATERIAL INSPECTION report transistor a110 DATAPACK/RHFLVDS31AD2V

    AT56K

    Abstract: atmel 936 Atmel PART marking atmel 731 ATMEL flow soldering atmel TQFP Package 64 lead code date marking kla 431 atmel MSL 1 AT5622 at56700
    Text:  Semiconductors AT56K 1 QualPack AT56K  Semiconductors 1.0 Contents 1.0 Contents . 2 2.0 General Information . 3


    Original     		PDF AT56K AT56K atmel 936 Atmel PART marking atmel 731 ATMEL flow soldering atmel TQFP Package 64 lead code date marking kla 431 atmel MSL 1 AT5622 at56700

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: Order from RF Marketing Rev. 3, 10/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for pulsed wideband large - signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are


    Original     		PDF MRF6V2010N MRF6V2010NB

    transistor A114

    Abstract: a113 bolt AN1955 AN3263 MRF6V2010N A113 A114 A115 C101 JESD22
    Text: Freescale Semiconductor Technical Data Document Number: Order from RF Marketing Rev. 4, 12/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for pulsed wideband large - signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are


    Original     		PDF MRF6V2010N MRF6V2010NB transistor A114 a113 bolt AN1955 AN3263 A113 A114 A115 C101 JESD22

    J133 mosfet transistor

    Abstract: mosfet j133 J104 MOSFET j122 mosfet mosfet j122 9601 mosfet J122 transistor transistor z5 TRANSISTOR J15
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9002R2 RF Power Field Effect Transistor Array N–Channel Enhancement–Mode Lateral MOSFET 1.0 GHz, 2 W, 26 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of this device make


    Original     		PDF MRF9002R2 MRF9002R2 J133 mosfet transistor mosfet j133 J104 MOSFET j122 mosfet mosfet j122 9601 mosfet J122 transistor transistor z5 TRANSISTOR J15

    PV smd transistor

    Abstract: JEDEC htrb bd 142 transistor
    Text: GeneSiC Semiconductor Reliability Report on 1200 V SiC Junction Transistor SJT Devices Revision 1.1 (Jan. 2014) 1 Table of Contents 1. Report Summary . 3 2. Reliability Test Plan . 3


    Original     		PDF

    transistor A113

    Abstract: a113 transistor transistor marking z11 marking j9 j133 transistor c series transistor equivalent table
    Text: Freescale Semiconductor Technical Data Rev. 5, 1/2005 Will be replaced by MRF9002NT1 end of Q205. N suffix indicates 260°C reflow capable. The PFP - 16 package has had lead - free terminations from its initial release. MRF9002R2 RF Power Field Effect Transistor Array


    Original     		PDF MRF9002NT1 MRF9002R2 MRF9002R2 transistor A113 a113 transistor transistor marking z11 marking j9 j133 transistor c series transistor equivalent table

    zener diode marking R11

    Abstract: 5.1 ch amplifier circuit diagram ZENER MARKING r12 "Amplifier Modules" 5.1 v zener RG4 DIODE jedec 0603
    Text: Freescale Semiconductor Technical Data Rev. 4, 1/2005 Gallium Arsenide CATV Integrated Amplifier Module Features • Specified for 79 - , 112 - and 132 - Channel Loading • Excellent Distortion Performance • Built - in Input Diode Protection • GaAs FET Transistor Technology


    Original     		PDF MMG1001R2 MMG1001T1 zener diode marking R11 5.1 ch amplifier circuit diagram ZENER MARKING r12 "Amplifier Modules" 5.1 v zener RG4 DIODE jedec 0603

    MRF9060MB

    Abstract: 93F2975 A04T-5 a113 bolt c17 dual mos 95F786
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices


    Original     		PDF MRF9060MR1 MRF9060MBR1 MRF9060MB 93F2975 A04T-5 a113 bolt c17 dual mos 95F786

    MRF9060MR1

    Abstract: 93F2975
    Text: Freescale Semiconductor Technical Data Rev. 7, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9060MR1 MRF9060MBR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these


    Original     		PDF MRF9060MR1 MRF9060MBR1 93F2975

    MRF6V2300N

    Abstract: MRF6V2300NB AN3263 A113 A114 A115 AN1955 C101 JESD22
    Text: Freescale Semiconductor Technical Data Document Number: Order from RF Marketing Rev. 4, 10/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for pulsed wideband large - signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are


    Original     		PDF MRF6V2300N MRF6V2300NB MRF6V2300NB AN3263 A113 A114 A115 AN1955 C101 JESD22

    hatching machine

    Abstract: MRF6V2150NB MRF6V2300N AN3263 MRF6V2300NB A114 A115 AN1955 C101 JESD22
    Text: Freescale Semiconductor Technical Data Document Number: Order from RF Marketing Rev. 6, 10/2006 RF Power Field - Effect Transistor MRF6V2150N MRF6V2150NB N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for wideband large - signal output and driver applications


    Original     		PDF MRF6V2150N MRF6V2150NB MRF6V2150N hatching machine MRF6V2150NB MRF6V2300N AN3263 MRF6V2300NB A114 A115 AN1955 C101 JESD22

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: Order from RF Marketing Rev. 7, 12/2006 RF Power Field - Effect Transistor MRF6V2150N MRF6V2150NB N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for wideband large - signal output and driver applications


    Original     		PDF MRF6V2150N MRF6V2150NB

    NIPPON CAPACITORS

    Abstract: capacitor mttf 100B120JP 100B180JP
    Text: Freescale Semiconductor Technical Data Rev. 2, 1/2005 RF Power Field Effect Transistors MRF5S9100NR1 MRF5S9100NBR1 MRF5S9100MR1 MRF5S9100MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with


    Original     		PDF MRF5S9100NBR1 MRF5S9100MR1 MRF5S9100MBR1 MRF5S9100NR1 NIPPON CAPACITORS capacitor mttf 100B120JP 100B180JP

    MRF9030NR1

    Abstract: marking z17 100B470JP
    Text: Freescale Semiconductor Technical Data Rev. 7, 1/2005 RF Power Field Effect Transistors MRF9030NR1 MRF9030MR1 MRF9030MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these


    Original     		PDF MRF9030MBR1) MRF9030NR1 MRF9030MR1 MRF9030MBR1 marking z17 100B470JP

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 7, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9045MR1 MRF9045MBR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these


    Original     		PDF MRF9045MR1) MRF9045MR1 MRF9045MBR1 MRF9045MBR1)

    J239

    Abstract: motorola J122 A113 MRF9002R2 RO4350 mosfet j133 motorola rf Power Transistor j122 mosfet J104 MOSFET J239 mosfet transistor
    Text: MOTOROLA Order this document by MRF9002R2/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9002R2 RF Power Field Effect Transistor Array N–Channel Enhancement–Mode Lateral MOSFET 1.0 GHz, 2 W, 26 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET


    Original     		PDF MRF9002R2/D MRF9002R2 J239 motorola J122 A113 MRF9002R2 RO4350 mosfet j133 motorola rf Power Transistor j122 mosfet J104 MOSFET J239 mosfet transistor

    A113

    Abstract: CTB112 CTB132 XMD112 XMD132
    Text: Freescale Semiconductor Technical Data Document Number: MMG2001NT1 Rev. 6, 3/2007 Features • Specified for 79 - , 112 - and 132 - Channel Loading • Excellent Distortion Performance • Higher Output Capability • Built - in Input Diode Protection • GaAs FET Transistor Technology


    Original     		PDF MMG2001NT1 A113 CTB112 CTB132 XMD112 XMD132

    MRF5S9070N

    Abstract: 100B180JP500X 68 uf 400 volt ac capacitor crcw12065603f100 865 marking amplifier MRF5S9070NR
    Text: Freescale Semiconductor Technical Data Rev. 4, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9070NR1 MRF5S9070MR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of


    Original     		PDF MRF5S9070NR1 MRF5S9070MR1 MRF5S9070N 100B180JP500X 68 uf 400 volt ac capacitor crcw12065603f100 865 marking amplifier MRF5S9070NR

    motorola rf Power Transistor

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF9002R2/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line MRF9002R2 RF Power Field Effect Transistor Array N - Channel Enhancement - Mode Lateral MOSFET 1.0 GHz, 2 W, 26 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFET


    Original     		PDF MRF9002R2/D MRF9002R2 MRF9002R2 MRF9002R2/D motorola rf Power Transistor

    F35V

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V10010N Rev. 1, 2/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6V10010NR4 RF Power transistor designed for applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for


    Original     		PDF MRF6V10010N MRF6V10010NR4 MRF6V10010N F35V

    transistor equivalent table c101

    Abstract: KEMET C1206C104K5RACTR CRCW12063301FKEA MRF6V10010N A03TKlc C1206C104K5RACTR
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V10010N Rev. 0, 6/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6V10010NR4 RF Power transistor designed for applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for


    Original     		PDF MRF6V10010N MRF6V10010NR4 MRF6V10010N transistor equivalent table c101 KEMET C1206C104K5RACTR CRCW12063301FKEA A03TKlc C1206C104K5RACTR

    J133 mosfet transistor

    Abstract: ON SEMICONDUCTOR J122 MRF9002R2 transistor a113 a113 transistor marking transistor RF
    Text: MRF9002R2 Rev. 5, 1/2005 Freescale Semiconductor Technical Data Will be replaced by MRF9002NT1 end of Q205. N suffix indicates 260°C reflow capable. The PFP - 16 package has had lead - free terminations from its initial release. MRF9002R2 RF Power Field Effect Transistor Array


    Original     		PDF MRF9002NT1 MRF9002R2 MRF9002R2 J133 mosfet transistor ON SEMICONDUCTOR J122 transistor a113 a113 transistor marking transistor RF