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    a13b5

    Abstract: A10B11 A15B0 A7B0 A13B4 a5b2
    Text: Mercury Programmable Logic Device Family December 2002, ver. 2.1 Features… Data Sheet • ■ Table 1. Mercury Device Features Feature Typical gates HSDI channels LEs ESBs 1 Maximum RAM bits Maximum user I/O pins EP1M120 EP1M350 120,000 350,000 8 18


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    A1B9

    Abstract: A5B15 32 Bit loadable counter CLASSIC EPLD FAMILY EP1M120F48 A8B12
    Text: Mercury Programmable Logic Device Family February 2001, ver. 1.1 Data Sheet Features… • Preliminary Information ■ Table 1. Mercury Device Features Feature Typical gates HSDI channels LEs ESBs 1 Maximum RAM bits Maximum user I/O pins EP1M120 EP1M350


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    EP1M120

    Abstract: A7B14 A7B5 A10-B
    Text: Mercury Programmable Logic Device Family October 2001, ver. 1.2 Features… Data Sheet • ■ Table 1. Mercury Device Features Feature Typical gates HSDI channels LEs ESBs 1 Maximum RAM bits Maximum user I/O pins EP1M120 EP1M350 120,000 350,000 8 18


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    PDF EP1M120 EP1M350 EP1M120 A7B14 A7B5 A10-B

    A7B0

    Abstract: a13b14 A10B A13B4
    Text: Mercury Programmable Logic Device Family March 2002, ver. 2.0 Features… Data Sheet • ■ Table 1. Mercury Device Features Feature Typical gates HSDI channels LEs ESBs 1 Maximum RAM bits Maximum user I/O pins EP1M120 EP1M350 120,000 350,000 8 18 4,800


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    PDF EP1M120F484C5 EP1M120 EP1M120F484C6 EP1M120F484C7 EP1M120F484C7A EP1M120F484C8A EP1M120F484I6 EP1M120* A7B0 a13b14 A10B A13B4

    10-LAB-wide

    Abstract: A6B12 A5B15 A6B11 A12B0 A12B1 A13B3 A2B9 A10B14
    Text: Mercury Programmable Logic Device Family February 2002, ver. 1.3 Features… Data Sheet • ■ Table 1. Mercury Device Features Feature Typical gates HSDI channels LEs ESBs 1 Maximum RAM bits Maximum user I/O pins EP1M120 EP1M350 120,000 350,000 8 18


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    A6B12

    Abstract: No abstract text available
    Text: Mercury Programmable Logic Device Family January 2003, ver. 2.2 Features… Data Sheet • ■ Table 1. Mercury Device Features Feature Typical gates HSDI channels LEs ESBs 1 Maximum RAM bits Maximum user I/O pins EP1M120 EP1M350 120,000 350,000 8 18


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    PDF 25-Gbps EP1M350F780C5 EP1M350 EP1M350F780C6 EP1M350F780C7 EP1M350F780I6 EP1M350* A6B12

    a2b5

    Abstract: A12B15 EP1M120 A7B9 A10B8 A15B6 56-LVTTL
    Text: Mercury Programmable Logic Device Family March 2002, ver. 2.0 Features… Data Sheet • ■ Table 1. Mercury Device Features Feature Typical gates HSDI channels LEs ESBs 1 Maximum RAM bits Maximum user I/O pins EP1M120 EP1M350 120,000 350,000 8 18 4,800


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    PDF EP1M120 EP1M350 a2b5 A12B15 EP1M120 A7B9 A10B8 A15B6 56-LVTTL

    binary tree multipliers

    Abstract: EP1M120 A7B9 A5B13
    Text: Mercury Programmable Logic Device Family January 2003, ver. 2.2 Features… Data Sheet • ■ Table 1. Mercury Device Features Feature Typical gates HSDI channels LEs ESBs 1 Maximum RAM bits Maximum user I/O pins EP1M120 EP1M350 120,000 350,000 8 18


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    PDF EP1M120 EP1M350 binary tree multipliers EP1M120 A7B9 A5B13

    A7B10

    Abstract: A15B6 A6B12 A13B3 A7B14 a12b1 A1B12 A5B15 A15B0 A9B10
    Text: Mercury プログラマブル・ロジック・ デバイス・ファミリ 2001 年 10 月 ver. 1.2 特長 Data Sheet • 表 1. Mercury デバイスの特長 機能 標準ゲート数 HSDI チャネル数 ロジック・エレメント LE 数 エンベデッド・システム・ブロック


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    PDF EP1M120 EP1M350 -DS-MERCURY-01 2001Altera 03-3340-9480FAX A7B10 A15B6 A6B12 A13B3 A7B14 a12b1 A1B12 A5B15 A15B0 A9B10

    A7B10

    Abstract: EP1M120 a1b12 A1B15 A3B9 A0B4
    Text: Mercury Programmable Logic Device Family February 2001, ver. 1.1 Data Sheet Features… • Preliminary Information ■ Table 1. Mercury Device Features Feature Typical gates HSDI channels LEs ESBs 1 Maximum RAM bits Maximum user I/O pins EP1M120 EP1M350


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    PDF EP1M120 EP1M350 -DS-MERCURY-01 2001Altera A7B10 EP1M120 a1b12 A1B15 A3B9 A0B4

    ad818 transistor

    Abstract: A0812 A0818 dual transistor ad811 AD810 transistor ad811 AD811 AD81B AD813 transistor ad813 dual differential
    Text: MICRO POWER SYSTEMS INC m ~5l Dlf| bOTTMMM O O G S ^ O E MICRO POWER SYSTEMS AD810 AD811 NPN DUAL MONOLITHIC SILICON NITROX TRANSISTORS h pE > ISO @ 10/j A - 1mA V BE M ATCHIN G AD818 LOG CO N FO RM AN CE . . | V B E i • V g ^ | = .4m V T Y P . HIGH f r


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    PDF AD810 AD811 AD812 AD813 AD818 500mW A0B13 AD818 ad818 transistor A0812 A0818 dual transistor ad811 AD810 transistor ad811 AD811 AD81B AD813 transistor ad813 dual differential