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    A06 TRANSISTOR Search Results

    A06 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    A06 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    marking A06

    Abstract: marking A06 amplifier KTMC1060SC MMBT3904T MMBT3906T transistor j25
    Text: MMBT3906T PNP Epitaxial Silicon Transistor Features C • General purpose amplifier transistor. E • Ultra-Small Surface Mount Package for all types. B • Suitable for general switching & amplification Marking : A06 • Well suited for portable application


    Original     		PDF MMBT3906T OT-523F MMBT3904T MMBT3906T marking A06 marking A06 amplifier KTMC1060SC transistor j25

    Untitled

    Abstract: No abstract text available
    Text: MMBT3906T PNP Epitaxial Silicon Transistor Features C • General purpose amplifier transistor. • Ultra-Small Surface Mount Package for all types. • Suitable for general switching & amplification • Well suited for portable application E B Marking : A06


    Original     		PDF MMBT3906T OT-523F MMBT3904T MMBT3906T

    Untitled

    Abstract: No abstract text available
    Text: MPS-A06 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)500m Absolute Max. Power Diss. (W)625m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)80 V(CE)sat Max. (V).25 @I(C) (A) (Test Condition)100m


    Original     		PDF MPS-A06 Freq100M

    a06 transistor

    Abstract: Code "A06" RF Semiconductor transistor A06 f 1405 zs BFP450 A06 NPN Siemens 1713 Q62702-F1590 marking A06 SIEMENS BFP450
    Text: SIEGET 25 BFP450 NPN Silicon RF Transistor l For Medium Power Amplifiers l Compression Point P = +19 dBm at 1.8 GHz -1dB l l l Maximum Available Gain Gma = 14 dB at 1.8 GHz Noise Figure F = 1.25 dB at 1.8 GHz Transition Frequency fT = 24 GHz Gold metalization for high reliability


    Original     		PDF BFP450 25-Line Transistor25 OT343 Q62702-F1590 a06 transistor Code "A06" RF Semiconductor transistor A06 f 1405 zs BFP450 A06 NPN Siemens 1713 Q62702-F1590 marking A06 SIEMENS BFP450

    a06 transistor

    Abstract: TRANSISTOR A06 Code "A06" RF Semiconductor marking AAAA marking A06 BF 184 transistor BFP405 a06 transistor 165 chip diode 047 SIEMENS BFP405
    Text: SIEGET 25 BFP405 NPN Silicon RF Transistor Low Current Applications l For Oscillators up to 12 GHz l For Noise Figure F = 1.15 dB at 1.8 GHz l Outstanding G = 22 dB at 1.8 GHz Transition Frequency f = 25 GHz l Gold metalization for high reliability l SIEGET 25-Line


    Original     		PDF BFP405 1512dB 25-Line OT343 Q62702-F-1592 a06 transistor TRANSISTOR A06 Code "A06" RF Semiconductor marking AAAA marking A06 BF 184 transistor BFP405 a06 transistor 165 chip diode 047 SIEMENS BFP405

    A05 SOT

    Abstract: A06 NPN a06 transistor marking A06 A05 sot-23 a06 to92 k 036 A06 diode D 92 M 03 DIODE MMBTA05
    Text: MPSA05/06 / MMBTA05/06 NPN SMALL SIGNAL TRANSISTORS POWER SEMICONDUCTOR Features • • • MMBTA05 / MMBTA06 Epitaxial Planar Die Construction High Transition Frequency Recommended for Driver and Low-Power Output Stages A C TOP VIEW B C B E G E D H K Mechanical Data


    Original     		PDF MPSA05/06 MMBTA05/06 MMBTA05 MMBTA06 O-92/SOT-23, MIL-STD-202, OT-23 MMBTA06 OT-23 A05 SOT A06 NPN a06 transistor marking A06 A05 sot-23 a06 to92 k 036 A06 diode D 92 M 03 DIODE

    AMS 3630

    Abstract: a06 transistor Q62702-F1591 ff 0401 transistor A06 marking A06 BFP420 A06 Code "A06" RF Semiconductor BFP420 application notes BFP420
    Text: SIEGET 25 BFP420 NPN Silicon RF Transistor l For High Gain Low Noise Amplifiers l For Oscillators up to 10 GHz l Noise Figure F = 1.05 dB at 1.8 GHz Outstanding G = 20 dB at 1.8 GHz l Transition Frequency f = 25 GHz l Gold metalization for high reliability


    Original     		PDF BFP420 25-Line OT343 Q62702-F1591 AMS 3630 a06 transistor Q62702-F1591 ff 0401 transistor A06 marking A06 BFP420 A06 Code "A06" RF Semiconductor BFP420 application notes BFP420

    A06 smd

    Abstract: A06 smd transistor SMD A06 a06 transistor A05 smd A05 SOT marking a06 CMBTA05 CMBTA06 transistor A06
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBTA05 CMBTA06 SILICON EPITAXIAL TRANSISTORS N–P–N transistor Marking CMBTA05 = 1H CMBTA06 = 1G PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm


    Original     		PDF OT-23 CMBTA05 CMBTA06 C-120 A06 smd A06 smd transistor SMD A06 a06 transistor A05 smd A05 SOT marking a06 CMBTA05 CMBTA06 transistor A06

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBTA05 CMBTA06 SILICON EPITAXIAL TRANSISTORS N–P–N transisto r Marking CMBTA05 = 1H CMBTA06 = 1G PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm


    Original     		PDF OT-23 CMBTA05 CMBTA06 C-120

    MPSA55

    Abstract: A06 NPN mpsa56 mpsa06 MFS-A05 MPS-A05 MPS-A06 MPS-A55 MPS-A56 MPS A06
    Text: MPS-A06 MPS-A56 MPS-A05 MPS-A55 W'ß\ COMPLEMENTARY SILICON AF MEDIUM POWER TRANSISTORS CASE TO-92A THE MPS-A05, MPS-A06, MPS-A55» MPS-A56 ARE SILICON PLANAR EPITAXIAL„TRANSISTORS FOR AF DRIVERS AND OUTPUTS, AS WELL AS FOR UNIVERSAL APPLICATIONS. THE MPS-A05,


    OCR Scan     		PDF MPS-A05 MPS-A06 MPS-A55 MPS-A56 MPS-A05, MPS-A06, MPS-A55Â MPSA55 A06 NPN mpsa56 mpsa06 MFS-A05 MPS-A05 MPS-A55 MPS A06

    Untitled

    Abstract: No abstract text available
    Text: MPS-A05 • MPS-A06 MPS-A55 •MPS-A56 COMPLEMENTARY SILICON AP MEDIUM POWER TRANSISTORS * <l t e ± s . i = M = L ? « 1~ " x ” s ~ • CASE TO-92A THE MPS-A05, MPS-A06, MPS-A55» MPS-A56 'ARE SILICON PLANAR EPITAXIAL„TRANSISTORS FOR AF DRIVERS AND OUTPUTS, AS WELL AS


    OCR Scan     		PDF MPS-A05 MPS-A06 MPS-A55 MPS-A56 O-92A MPS-A05, MPS-A06, MPS-A55Â

    MPSa56

    Abstract: transistor A55 LO5A A06 NPN MPS-A56 mpsa55 a56 transistor kps a56 MPS A56 transistor MPS-A05
    Text: MPS-A55 • MPS-A56 COMPLEMENTARY SILICON AP MEDIUM POWER TRANSISTORS i II CASE T0-92A THE MPS-A05, MPS-A06, MPS-A55, MPS-A56 'ARE SILICON PLANAR EPITAXIAL„TRANSISTORS FOR AF DRIVERS AND OUTPUTS, AS WELL AS FOR UNIVERSAL APPLICATIONS. THE MPS-A05, MPS-A06 ARE NPN AND ARE COMPLEMENTARY TO


    OCR Scan     		PDF MPS-A55 MPS-A56 MPS-A05, MPS-A06, MPS-A55, MPS-A06 MPS-A55 MPS-A56 MPSa56 transistor A55 LO5A A06 NPN mpsa55 a56 transistor kps a56 MPS A56 transistor MPS-A05

    a06 amplifier

    Abstract: a06 transistor a06 transistor 165 MPS-A05 MPS-A06
    Text: r— i Silicon Transistors I I B I MPS-A05 MPS-A06 The MPS-A05 and MPS-A06 are silicon planar epitaxial passivated NPN tran­ sistors designed for general purpose audio amplifier applications. a b s o lu te m a x im u m r a t i n g s : TA = 25°c unless otherwise specified


    OCR Scan     		PDF MPS-A05 MPS-A06 MPS-A05 MPS-A06 100mA, 100mA) 300/Usee. a06 amplifier a06 transistor a06 transistor 165

    Untitled

    Abstract: No abstract text available
    Text: Transistors NPN General Purpose Transistor I SSTA06/M MSTA06/M PS A06 # External dimensions Units : mm •F eatures 1 ) B V ceo < 4 0 V (lc = *1 m A ) SSTA06 2 ) Complements the SSTA56/MMSTA56/MPSA56. 0 .9 5 ± g ; f 1 9 ± 0 .2 •P ackage, mark and packaging specifications


    OCR Scan     		PDF SSTA06/M MSTA06/M SSTA06 SSTA56/MMSTA56/MPSA56. MMSTA06 MPSA06 O-220FN O-220FN O220FP

    a06 transistor

    Abstract: transistor 468 TRANSISTOR A06 mpsa065 a06 amplifier transistor A55 MPSA55 GE 001755 a56 transistor Transistor B C 468
    Text: G E SOLID STATE Öl ÏVEÏ3Û750Û1 DOIVES Signal Transistors MPS-A05, A06, A55, A56 Silicon Transistors TO-92 The GE/RCA MPS-A 05,06 NPN types and M PS-A 55,56 PNP types are planar epitaxial passivated silicon transistors de­ signed for medium current general purpose amplifier appli­


    OCR Scan     		PDF MPS-A05, MPS-A05 MPS-A55 MPS-A06 MPS-A56 IZCS41H1 andMPS-A56. a06 transistor transistor 468 TRANSISTOR A06 mpsa065 a06 amplifier transistor A55 MPSA55 GE 001755 a56 transistor Transistor B C 468

    a06 transistor

    Abstract: TRANSISTOR A06 a06 amplifier mpsa065
    Text: G E SOLI» STATE DI DEÏ3Û75D01 DOIVES Signal Transistors MPS-A05, A06, A55, A56 Silicon Transistors TO-92 T h e G E/R C A M P S -A 0 5 ,0 6 N PN types and M P S -A 5 5 ,56 PNP types are planar epitaxial passivated silicon transistors de­ signed for medium current general purpose amplifier appli­


    OCR Scan     		PDF 75D01 MPS-A05, MPS-A05 MPS-A06 MPS-A55 MPS-A56 MPS-A06. andMPS-A56. IICS-43Ht a06 transistor TRANSISTOR A06 a06 amplifier mpsa065

    Siemens DIODE E 1240

    Abstract: AMS 3630 Code "A06" RF Semiconductor SIEMENS BFP420 Transistor MJE 540 HA 12432 SOT343-3 BFP420 application notes BFP420 A06 ff 0401 transistor
    Text: S IE M E N S SIEGET 25 BFP420 NPN Silicon RF Transistor • • • • • • For High Gain Low Noise Amplifiers For Oscillators up to 10 GHz Noise Figure F = 1.05 dB at 1.8 GHz Outstanding Gms = 20 dB at 1.8 GHz Transition Frequency 1j = 25 GHz Gold metalization for high reliability


    OCR Scan     		PDF BFP420 25-Line Transistor25 Q62702-F1591 OT343 Siemens DIODE E 1240 AMS 3630 Code "A06" RF Semiconductor SIEMENS BFP420 Transistor MJE 540 HA 12432 SOT343-3 BFP420 application notes BFP420 A06 ff 0401 transistor

    SIEMENS BFP405

    Abstract: marking A06 transistor A06
    Text: SIEMENS SIEGET 25 BFP405 NPN Silicon RF Transistor • • • • • • For Low Current Applications For Oscillators up to 12 GHz Noise Figure F = 1.15 dB at 1.8 GHz Outstanding Gms = 22 dB at 1.8 GHz Transition Frequency fT = 25 GHz Gold metalization for high reliability


    OCR Scan     		PDF BFP405 25-Line Transistor25 62702-F-1592 OT343 SIEMENS BFP405 marking A06 transistor A06

    a06 transistor

    Abstract: CHIP T503 S BFP450 siemens BFP450
    Text: S IE M E N S SIEGET 25 BFP450 NPN Silicon RF Transistor • • • • • For Medium Power Amplifiers Compression Point P.1dB = +19 dBm at 1.8 GHz Maximum Available Gain G ma = 14 dB at 1.8 GHz Noise Figure F = 1.25 dB at 1.8 GHz Transition Frequency f j = 24 GHz


    OCR Scan     		PDF 25-Line Transistor25 BFP450 Q62702-F1590 OT343 a06 transistor CHIP T503 S BFP450 siemens BFP450

    Untitled

    Abstract: No abstract text available
    Text: CMBTA05 CMBTA06 SILICON EPITAXIAL TRANSISTORS N-P-N transistor Marking CMBTA05 = IH CMBTA06 = IG PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm J5.0 2.8 0.14 0.48 038 3 2.6 Pin configuration 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR J.02 0.89" 2 .00 _ 0.60 0.40


    OCR Scan     		PDF CMBTA05 CMBTA06

    Untitled

    Abstract: No abstract text available
    Text: CMBTA05 CMBTA06 SIOCON EPITAXIAL TRANSISTORS N -P-N transistor Marking CMBTA05 = 1H CMBTA06 = 1G PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0_ 2.8 0.14 0.48 1538 L 0.70 0.50 3 Pin configuration 1.4 2.6 2.4 1.2 RO.l 1 = BASE 2 = EMITTER 3 = COLLECTOR ComT


    OCR Scan     		PDF CMBTA05 CMBTA06 CMBTA05

    Untitled

    Abstract: No abstract text available
    Text: CMBTA05 CMBTA06 SILICON EPITAXIAL TRANSISTORS N -P-N transistor Marking CMBTA05 = IH CMBTA06 = IG PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 2.8 0.14 0.48 0.38 "^^009 3 Pin configuration 2.6 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR _K02 0.89" 0.60 0.40


    OCR Scan     		PDF CMBTA05 CMBTA06

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS MPSA05; MPSA06 NPN general purpose transistors Product specification Supersedes data of 1997 Mar 26 File under Discrete Semiconductors, SC04 Philips Sem iconductors 1998 Jul 21 PHILIPS Philips Semiconductors Product specification NPN general purpose transistors


    OCR Scan     		PDF MPSA05; MPSA06 MPSA56. 115104/00/03/pp8

    a06 transistor

    Abstract: TRANSISTOR A06 marking A06 CMBTA05 CMBTA06 TZ marking
    Text: CMBTA05 CMBTA06 SILICON EPITAXIAL TRANSISTORS N -P-N transistor M arking CMBTA05 = IH CMBTA06 = IG PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 0.14 0.48 0.38 3 Pin configuration 2.6 2.4 1 = BASE 2 = EMITTER 3 = COLLECTOR _1. 02 _ 0.89 0.60 0.40


    OCR Scan     		PDF CMBTA05 CMBTA06 CMBTA05 a06 transistor TRANSISTOR A06 marking A06 CMBTA06 TZ marking