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    A.4 SOT363 Search Results

    A.4 SOT363 Result Highlights (3)

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    EV-SOMCRR-EZLITE Analog Devices Compact DSP SOM Carrier Evalua Visit Analog Devices Buy
    EV-21562-AUTO Analog Devices ADSP-21562 Audio Weaver Eval B Visit Analog Devices Buy
    ADSP-CM409CBCZAFRL Analog Devices ARM Cortex M4 Mixed-Signal BGA Visit Analog Devices Buy

    A.4 SOT363 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: ESD1P0RF. RF ESD Protection Diodes • ESD / transient protection of RF antenna / interfaces or ultra high speed data lines acc. to: IEC61000-4-2 ESD : ± 20 kV (contact) IEC61000-4-4 (EFT): 40 A (5/50 ns) IEC61000-4-5 (surge): 10 A (8/20 µs) • Ultra low capacitance of 1 pF typ.


    Original     		PDF IEC61000-4-2 IEC61000-4-4 IEC61000-4-5

    Untitled

    Abstract: No abstract text available
    Text: ESD1P0RF. RF ESD Protection Diodes • ESD / transient protection of RF antenna / interfaces or ultra high speed data lines acc. to: IEC61000-4-2 ESD : ± 20 kV (contact) IEC61000-4-4 (EFT): 40 A (5/50 ns) IEC61000-4-5 (surge): 10 A (8/20 µs) • Ultra low capacitance of 1 pF typ.


    Original     		PDF IEC61000-4-2 IEC61000-4-4 IEC61000-4-5

    SOt323 marking code 6X

    Abstract: BCR108S BCR108W IEC61000-4-4 marking code INFINEON MARKING CODE 2I ESD1P0RFW
    Text: ESD1P0RF. RF ESD Protection Diodes • ESD / transient protection of RF antenna / interfaces or ultra high speed data lines acc. to: IEC61000-4-2 ESD : ± 20 kV (contact) IEC61000-4-4 (EFT): 40 A (5/50 ns) IEC61000-4-5 (surge): 10 A (8/20 µs) • Ultra low capacitance of 1 pF typ.


    Original     		PDF IEC61000-4-2 IEC61000-4-4 IEC61000-4-5 SOt323 marking code 6X BCR108S BCR108W IEC61000-4-4 marking code INFINEON MARKING CODE 2I ESD1P0RFW

    BCR108S

    Abstract: BCR108W IEC61000-4-4 SOt323 marking code 6X
    Text: ESD1P0RF. RF ESD Protection Diodes • ESD / transient protection of RF antenna / interfaces or ultra high speed data lines acc. to: IEC61000-4-2 ESD : ± 20 kV (contact) IEC61000-4-4 (EFT): 40 A (5/50 ns) IEC61000-4-5 (surge): 10 A (8/20 µs) • Ultra low capacitance of 1 pF typ.


    Original     		PDF IEC61000-4-2 IEC61000-4-4 IEC61000-4-5 BCR108S BCR108W IEC61000-4-4 SOt323 marking code 6X

    si1428

    Abstract: No abstract text available
    Text: New Product Si1428EDH Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A)a 0.045 at VGS = 10 V 4 30 0.049 at VGS = 4.5 V 4 0.060 at VGS = 2.5 V 4 Qg (Typ.) 4 nC • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si1428EDH 2002/95/EC OT-363 SC-70 Si1428EDH-T1-GE3 11-Mar-11 si1428

    sot363 marking DATE code

    Abstract: BCR108S IEC61000-4-4 ESD5V0S5US-E6727 ESD5V0S5US
    Text: ESD5V0SxUS Multi-Channel TVS Diode Array • ESD / transient protection of data and power lines in 3.3 V / 5 V application according to: IEC61000-4-2 ESD : ± 30 KV (contact) IEC61000-4-4 (EFT): 80 A (5/50 ns) IEC61000-4-5 (Surge): 10 A (8/20 µs) • Working voltage: 5 V (5.3 V max.)


    Original     		PDF IEC61000-4-2 IEC61000-4-4 IEC61000-4-5 E6727 sot363 marking DATE code BCR108S IEC61000-4-4 ESD5V0S5US-E6727 ESD5V0S5US

    Untitled

    Abstract: No abstract text available
    Text: ESD5V0SxUS Multi-Channel TVS Diode Array • ESD / transient protection of data and power lines in 3.3 V / 5 V application according to: IEC61000-4-2 ESD : ± 25 KV (contact) IEC61000-4-4 (EFT): 40 A (5/50 ns) IEC61000-4-5 (Lighting): 6 A (8/20 µs) • Max. working voltage: 5 V (5.3 V max.)


    Original     		PDF IEC61000-4-2 IEC61000-4-4 IEC61000-4-5 OT363 OT363

    Untitled

    Abstract: No abstract text available
    Text: New Product Si1428EDH Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (A)a 0.045 at VGS = 10 V 4 30 0.049 at VGS = 4.5 V 4 0.060 at VGS = 2.5 V 4 Qg (Typ.) 4 nC • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si1428EDH 2002/95/EC OT-363 SC-70 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si1401

    Abstract: SI1401EDH-T1-GE3 si1401e
    Text: New Product Si1401EDH Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.034 at VGS = - 4.5 V -4 VDS (V) - 12 0.046 at VGS = - 2.5 V -4 0.070 at VGS = - 1.8 V -4 0.110 at VGS = - 1.5 V -4 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si1401EDH 2002/95/EC OT-363 SC-70 Si1401EDH-T1-GE3 18-Jul-08 Si1401 si1401e

    ESD5V0S5US-E6727

    Abstract: No abstract text available
    Text: ESD5V0SxUS Multi-Channel TVS Diode Array • ESD / transient protection of data and power lines in 3.3 V / 5 V application according to: IEC61000-4-2 ESD : ± 30 KV (contact) IEC61000-4-4 (EFT): 80 A (5/50 ns) IEC61000-4-5 (Surge): 10 A (8/20 µs) • Working voltage: 5 V (5.3 V max.)


    Original     		PDF IEC61000-4-2 IEC61000-4-4 IEC61000-4-5 E6727 E6727* ESD5V0S5US-E6727

    Untitled

    Abstract: No abstract text available
    Text: New Product Si1401EDH Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.034 at VGS = - 4.5 V -4 VDS (V) - 12 0.046 at VGS = - 2.5 V -4 0.070 at VGS = - 1.8 V -4 0.110 at VGS = - 1.5 V -4 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si1401EDH 2002/95/EC OT-363 SC-70 Si1401EDH-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si1401EDH Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.034 at VGS = - 4.5 V -4 VDS (V) - 12 0.046 at VGS = - 2.5 V -4 0.070 at VGS = - 1.8 V -4 0.110 at VGS = - 1.5 V -4 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si1401EDH 2002/95/EC OT-363 SC-70 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    si1401e

    Abstract: 70080
    Text: New Product Si1401EDH Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.034 at VGS = - 4.5 V -4 VDS (V) - 12 0.046 at VGS = - 2.5 V -4 0.070 at VGS = - 1.8 V -4 0.110 at VGS = - 1.5 V -4 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si1401EDH 2002/95/EC OT-363 SC-70 Si1401EDH-T1-GE3 11-Mar-11 si1401e 70080

    sot363 marking DATE code

    Abstract: BCR108S IEC61000-4-4 MARKING E4S
    Text: ESD5V0SxUS Multi-Channel TVS Diode Array • ESD / transient protection of data and power lines in 3.3 V / 5 V application according to: IEC61000-4-2 ESD : ± 25 KV (contact) IEC61000-4-4 (EFT): 40 A (5/50 ns) IEC61000-4-5 (Lighting): 6 A (8/20 µs) • Max. working voltage: 5 V (5.3 V max.)


    Original     		PDF IEC61000-4-2 IEC61000-4-4 IEC61000-4-5 OT363 sot363 marking DATE code BCR108S IEC61000-4-4 MARKING E4S

    Untitled

    Abstract: No abstract text available
    Text: ESD5V0SxUS Multi-Channel TVS Diode Array • ESD / transient protection of data and power lines in 3.3 V / 5 V application according to: IEC61000-4-2 ESD : ± 30 KV (contact) IEC61000-4-4 (EFT): 80 A (5/50 ns) IEC61000-4-5 (Surge): 10 A (8/20 µs) • Working voltage: 5 V (5.3 V max.)


    Original     		PDF IEC61000-4-2 IEC61000-4-4 IEC61000-4-5 E6727* OT363

    Untitled

    Abstract: No abstract text available
    Text: New Product Si1401EDH Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.034 at VGS = - 4.5 V -4 VDS (V) - 12 0.046 at VGS = - 2.5 V -4 0.070 at VGS = - 1.8 V -4 0.110 at VGS = - 1.5 V -4 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si1401EDH 2002/95/EC OT-363 SC-70 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    MARKING d5 SOT363

    Abstract: No abstract text available
    Text: SEMICONDUCTOR PF0224US6 TECHNICAL DATA EMI Filtering TVS APPLICATION EMI Filter and line termination for USB upstream ports on. USB Hubs B B1 PC peripherals 1 6 2 5 3 4 DIM A A1 B A C EMI/RFI filtering. A1 C FEATURES ESD Protection to IEC 61000-4-2 Level 4.


    Original     		PDF PF0224US6 MARKING d5 SOT363

    PF0314US6

    Abstract: MARKING d5 SOT363
    Text: SEMICONDUCTOR PF0314US6 TECHNICAL DATA EMI Filtering TVS APPLICATION EMI Filter and line termination for USB upstream ports on. USB Hubs B B1 PC peripherals 1 6 2 5 3 4 DIM A A1 B A C EMI/RFI filtering. A1 C FEATURES ESD Protection to IEC 61000-4-2 Level 4.


    Original     		PDF PF0314US6 PF0314US6 MARKING d5 SOT363

    Untitled

    Abstract: No abstract text available
    Text: New Product Si1441EDH Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.041 at VGS = - 4.5 V -4 0.054 at VGS = - 2.5 V -4 0.100 at VGS = - 1.8 V -4 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si1441EDH 2002/95/EC OT-363 SC-70 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si1441EDH Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.041 at VGS = - 4.5 V -4 0.054 at VGS = - 2.5 V -4 0.100 at VGS = - 1.8 V -4 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si1441EDH 2002/95/EC OT-363 SC-70 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    CMKTVS5-4

    Abstract: No abstract text available
    Text: CMKTVS5-4 w w w. c e n t r a l s e m i . c o m SURFACE MOUNT SILICON LOW CAPACITANCE QUAD TVS/DIODE ARRAY DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKTVS5-4 is a 4-line TVS/Diode array packaged in an ULTRAminiTM surface mount case. With its low capacitance, this


    Original     		PDF OT-363 IEC6100Reverse 8x20s CMKTVS5-4

    Untitled

    Abstract: No abstract text available
    Text: Si1414DH Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 a RDS(on) () ID (A) 0.046 at VGS = 4.5 V 4 0.050 at VGS = 2.5 V 4 0.057 at VGS = 1.8 V 4 • TrenchFET Power MOSFET • 100 % Rg Tested • Material categorization:


    Original     		PDF Si1414DH OT-363 SC-70 Si1414DH-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: £ £ N £ H K F R E E S C A L E SEMICONDUCTOR, A L L R IG H T S RESERVED. INC. MECHANICAL TITLE' OUTLINE DOCUMENT SOT363, 6LD, 0.65MM DITCH CASE PRINT NO' 9 8 A S B 4 2 9 8 5 B NUMBER' 4 1 9 B -0 1 STANBARB VERSIEN NUN-UEBEC NET TE SCALE REV' J 24 MAY


    OCR Scan     		PDF OT363, 98asb42985b 419B-01 5m-1994. OTH63, 9sasd42985d

    CE121

    Abstract: No abstract text available
    Text: Thal H E W L E T T m iftM P A C K A R D 0.5 - 6 GHz Low Noise GaAs MMIC Amplifier Technical Data MGA-86563 Featu res • Ultra-M iniature Package • Internally Biased, Single +5 V Supply 1 4 mA • 1.6 dB Noise Figure a t 2 .4 GHz • 2 1 .8 dB Gain a t 2 .4 GHz


    OCR Scan     		PDF MGA-86563 OT-363 MGA-86563 OT-363 OT-143. 0D1643T CE121