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    A 643 TRANSISTOR Search Results

    A 643 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
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    A 643 TRANSISTOR Price and Stock

    NTE Electronics Inc 2N5486

    Silicon N−Channel JFET Transistor - VHF/UHF Amplifier - 25V - 30mA - TO92 Type Package.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 2N5486 643
    • 1 -
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    • 100 $1.32
    • 1000 $0.948
    • 10000 $0.856
    		Buy Now

    A 643 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TL092

    Abstract: AN-643 signal path designer
    Text: National Semiconductor Application Note 643 Joe Cocovich December 1989 INTRODUCTION The control and minimization of Electro-Magnetic Interference EMI is a technology that is, out of necessity, growing rapidly. EMI will be defined shortly but, for now, you might be


    Original     		PDF

    minor project proposal on electronics

    Abstract: TL092 AN-643 signal path designer national special function analog and digital circuits
    Text: National Semiconductor Application Note 643 Joe Cocovich April 2001 INTRODUCTION The control and minimization of Electro-Magnetic Interference EMI is a technology that is, out of necessity, growing rapidly. EMI will be defined shortly but, for now, you might be


    Original     		PDF

    TRANSISTOR 8052

    Abstract: 8052 basic E03644 AD8305 Microconverter Analog Voltage Variable Attenuator Variable-Optical-Attenuator 400M AD823 AN-643
    Text: AN-643 APPLICATION NOTE One Technology Way • P.O. Box 9106 • Norwood, MA 02062-9106 • Tel: 781/329-4700 • Fax: 781/326-8703 • www.analog.com Closed-Loop Control Circuit Implementation of the ADuC832 MicroConverter IC and the AD8305 Logarithmic Converter in a Digital Variable Optical Attenuator


    Original     		PDF AN-643 ADuC832 AD8305 16-lead AD8305, log10 E03644­ TRANSISTOR 8052 8052 basic E03644 Microconverter Analog Voltage Variable Attenuator Variable-Optical-Attenuator 400M AD823 AN-643

    055E-3

    Abstract: csd261 PNP transistor TO-92 BC
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON TRANSISTOR CSA 643 TO-92 Plastic Package E BC Audio Frequency General Purpose Power Amplifier Application Complementary CSD 261 ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise


    Original     		PDF C-120 CSA643Rev110302D 055E-3 csd261 PNP transistor TO-92 BC

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON TRANSISTOR CSA 643 TO-92 Plastic Package E BC Audio Frequency General Purpose Power Amplifier Application Complementary CSD 261 ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise


    Original     		PDF C-120 CSA643Rev110302D

    Untitled

    Abstract: No abstract text available
    Text: Silicon Bipolar Low Noise Microwave Transistors MP42141 Case Styles Features • Low Intrinsic Noise Figure 2.3dB Typical @ 1.0 GHz • High Power Gain At 1.0 GHz – 18.0 dB Typical • Gold Metalization • Hermetic and Surface Mount Packages Available


    Original     		PDF MP42141 MP42141 MP42141-509

    transistor bc 643

    Abstract: No abstract text available
    Text: Continental Device India Limited IS/ISO 9002 Lic# QSC/L-000019.3 An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON TRANSISTOR CSA 643 TO-92 Plastic Package E BC Audio Frequency General Purpose Power Amplifier Application Complementary CSD 261 ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise


    Original     		PDF QSC/L-000019 C-120 CSA643Rev110302D transistor bc 643

    MP42141

    Abstract: RF TRANSISTOR NPN MICRO-X low noise transistors microwave GHZ micro-X Package MP4214135 MP4214100 MP42141-509 S21E S22E MICRO-X
    Text: Silicon Bipolar Low Noise Microwave Transistors MP42141 Case Styles Features • Low Intrinsic Noise Figure 2.3dB Typical @ 1.0 GHz • High Power Gain At 1.0 GHz – 18.0 dB Typical • Gold Metalization • Hermetic and Surface Mount Packages Available


    Original     		PDF MP42141 MP42141 MP42141-509 RF TRANSISTOR NPN MICRO-X low noise transistors microwave GHZ micro-X Package MP4214135 MP4214100 MP42141-509 S21E S22E MICRO-X

    monochrome monitor schematic

    Abstract: CR3424R MSK643 MSK643B high voltage crt transistor 643
    Text: ISO 9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. WIDE BANDWIDTH, VERY HIGH VOLTAGE CRT VIDEO AMPLIFIER 643 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: MIL-PRF-38534 CERTIFIED Negative Output Voltage for Grid Drive 2.5nS Transition Times Drives 8.5pF Capacitive Load With Ease


    Original     		PDF MIL-PRF-38534 175MHz 75Vpp CR3424R MSK643 MSK643B Military-Mil-PRF-38534 monochrome monitor schematic CR3424R MSK643 MSK643B high voltage crt transistor 643

    Untitled

    Abstract: No abstract text available
    Text: ISO 9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. WIDE BANDWIDTH, VERY HIGH VOLTAGE CRT VIDEO AMPLIFIER 643 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: MIL-PRF-38534 CERTIFIED Negative Output Voltage for Grid Drive 2.5nS Transition Times Drives 8.5pF Capacitive Load With Ease


    Original     		PDF 175MHz 75Vpp CR3424R MIL-PRF-38534 MSK643 MSK643B Military-Mil-PRF-38534

    F508

    Abstract: No abstract text available
    Text: MIL-PRF-38534 CERTIFIED M.S.KENNEDY CORP. WIDE BANDWIDTH, VERY HIGH VOLTAGE CRT VIDEO AMPLIFIER 643 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: Negative Output Voltage for Grid Drive 2.5nS Transition Times Drives 8.5pF Capacitive Load With Ease


    Original     		PDF MIL-PRF-38534 175MHz 70Vpp CR3424R MSK643 MSK643G F508

    transistor 643

    Abstract: CR3424R monochrome crt schematic MSK643 MSK643B high power fet amplifier schematic A 643 transistor
    Text: ISO 9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. WIDE BANDWIDTH, VERY HIGH VOLTAGE CRT VIDEO AMPLIFIER 643 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: MIL-PRF-38534 CERTIFIED Negative Output Voltage for Grid Drive 2nS Transition Times Drives 8.5pF Capacitive Load With Ease


    Original     		PDF MIL-PRF-38534 175MHz 75Vpp CR3424R MSK643 MSK643B Military-Mil-PRF-38534 transistor 643 CR3424R monochrome crt schematic MSK643 MSK643B high power fet amplifier schematic A 643 transistor

    Untitled

    Abstract: No abstract text available
    Text: MIL-PRF-38534 CERTIFIED M.S.KENNEDY CORP. WIDE BANDWIDTH, VERY HIGH VOLTAGE CRT VIDEO AMPLIFIER 643 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: Negative Output Voltage for Grid Drive 2.5nS Transition Times Drives 8.5pF Capacitive Load With Ease


    Original     		PDF MIL-PRF-38534 175MHz 70Vpp CR3424R MSK643 MSK643G

    C22B

    Abstract: ESM692
    Text: *ESM 642 *ESM 643 NPN SILICON TRANSISTORS, EP ITAXIAL PLANAR TR A N S IS T O R S N P N S IL IC IU M , P L A N A R E P IT A X IA U X Compì, of ESM 692, ESM 693 % Preferred device D is p o s itif recommandé High breakdow voltage Haute tension de claquage 300 V


    OCR Scan     		PDF CB-97 C22B ESM692

    Untitled

    Abstract: No abstract text available
    Text: 19- 1783; Rev 0; 6/97 High-Efficiency, Step-Up DC-DC Converters for 1V Inputs Features The MAXI 642/MAXI 643 are high-efficiency, low-voltage, step-up DC-DC converters intended for devices pow­ ered by a single alkaline cell. They feature low quies­ cent supply currents and are supplied in the ultra-small


    OCR Scan     		PDF 642/MAXI 7bb51 ib25M MAX1642/MAX

    f640

    Abstract: IR 643 643R
    Text: 33 HARRIS IR F640/641/642/643 IR F640R/641R/642R /643R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package T O -2 2 0 A B TOP VIEW • 16A and 18A, 150V - 200V • rDS on = 0 .1 8 fi and 0 .2 2 0 • Single Pulse Avalanche Energy Rated*


    OCR Scan     		PDF F640/641/642/643 F640R/641R/642R /643R IRF640, IRF641, IRF642, IRF640R, IRF641R, IRF642R IRF643R f640 IR 643 643R

    Untitled

    Abstract: No abstract text available
    Text: • 4302271 QDS4033 T04 ■ 2 H A R R IS HAS IR F640/641/642/643 IR F640R /641R /642R /643R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package T0-22QAB TOP VIEW • 16A and 18A, 150V - 200V • rDS(on = 0 .1 8 0 and 0 .2 2 0 • Single Pulse Avalanche Energy Rated*


    OCR Scan     		PDF QDS4033 F640/641/642/643 F640R /641R /642R /643R T0-22QAB IRF640, IRF641, IRF642,

    BD 649

    Abstract: darlington bd 645 B0643 B0645 BD647 b 647 a c bd649 BD 645 BD643 bd650
    Text: BD 643 - BD 645 ' BD 647 - BD 649 Silizium-NPN-Darlington-Leistungstransistoren Silicon NPN Darlington Power Transistors Anwendungen: NF-Endstufen Applications: AF-Output stages Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage


    OCR Scan     		PDF

    BO 649

    Abstract: BD 104 darlington bd 645 TOP-66 b 647 c BD 649 bd647 BD64S Q62702-D376 BD 104 NPN
    Text: - 25C D • 0235bQS 00043Ô7 7 « S I E Û _ NPN Silicon Darlington Transistors T-33-29 SIEMENS AKTIEN GESELLSCHAF ; ° ^ 387 BD 643 BD 645 BD 647 BD 649 ° Epibase power darlington transistors 62.5W BD 643, BD 645, BD 647, and BD 649 are monolithic NPN silicon epibase power darlington


    OCR Scan     		PDF 0235bQS T-33-29 OP-66) 643/BD 645/BD BD643. 0QQ43 T-33-29 BD647 BO 649 BD 104 darlington bd 645 TOP-66 b 647 c BD 649 BD64S Q62702-D376 BD 104 NPN

    BD 649

    Abstract: 2SC 645 TOP-66 BD 104 NPN darlington bd 645 BD 649/BD 650 BD647 BD 104 Q62702-D229 Q62901-B65
    Text: 25C D • 0235bG5 0004307 7 ■ S I E û , NPN Silicon Darlington Transistors T - 3 3 -2 9 SIEMENS AKTIENfiESELLSCHAF ; ° ^ 387 BD 643 BD 645 BD 647 BD 649 ° Epibase p o w e r d arlin g to n transistors 6 2 .5 W BD 6 4 3 , BD 6 4 5 , BD 6 4 7 , and BD 6 4 9 are monolithic NPN silicon epibase power darlington


    OCR Scan     		PDF fl23SLQS T-33-29 OP-66) 643/BD 645/BD BD647. BD843, BD645. BD647, BD 649 2SC 645 TOP-66 BD 104 NPN darlington bd 645 BD 649/BD 650 BD647 BD 104 Q62702-D229 Q62901-B65

    BF298

    Abstract: BC 458 transistors BC 458 transistors BC 548 BC 558 transistor BC 458 transistor bf 422 NPN bc 457 transistors BC 548 BC 558 PNP BC 557 npn Transistor BC 457
    Text: th o m so n -csf general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PN P N PN PN P NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PN P v CEO B Ç 2 3 8 .


    OCR Scan     		PDF BCW94 BF298 BC 458 transistors BC 458 transistors BC 548 BC 558 transistor BC 458 transistor bf 422 NPN bc 457 transistors BC 548 BC 558 PNP BC 557 npn Transistor BC 457

    2n2222 -331 transistors

    Abstract: 2N2222A 331 2n2222 -331 2n2222 a 331 2n2222 331 transistors JA101P 2n2222 331 2n3904 331 BC876 bd131 bd132
    Text: Philips Sem iconductors Small-signal Transistors TYPE NUMBER PAGE Index TYPE NUMBER PAGE TYPE NUMBER PAGE BC107 87 BC338 107 BC558C 135 BC107A 87 BC338-16 107 BC559 139 BC107B 87 BC338-25 107 BC559A 139 BC108 87 BC338-40 107 BC559B 139 BC108A 87 BC368 111


    OCR Scan     		PDF BC107 BC107A BC107B BC108 BC108A BC108B BC108C BC109 BC109B BC109C 2n2222 -331 transistors 2N2222A 331 2n2222 -331 2n2222 a 331 2n2222 331 transistors JA101P 2n2222 331 2n3904 331 BC876 bd131 bd132

    ksd 250v 10a

    Abstract: B0X34C ksd 202 ksa 3.3 KSC1330 IR 733 sa992 uhf fm 1845 IF 508AF KSA733
    Text: FUNCTION GUIDE TRANSISTORS 3. QUICK REFERENCE TABLE APPLICATION 3.1 Audio Equipment Package Application SOT-23 TO-92 FM RM AMP M ix Conv Local O se IF KSC 2223 KSC 2223 KSC 2223 KSC 2715 KSC 1674 KSC 1674 KSC1674/KSC1675 KSC838/KSC1676 AM RF Conv O se KSC1623


    OCR Scan     		PDF OT-23 KSC1623 812/KSC SA812/KSC KSA812/KSC1623 KSC1674/KSC1675 KSC838/KSC1676 KSC945/KSC815 ksd 250v 10a B0X34C ksd 202 ksa 3.3 KSC1330 IR 733 sa992 uhf fm 1845 IF 508AF KSA733

    BD 650

    Abstract: b0644 BD648 bd646 BD 644 B0648 B0646 bd 648 bd650 darlington bd 645
    Text: BD 644 • BD 646 • BD 648 • BD 650 Silizium-PNP-Darlington-Leistungstransistoren Silicon PNP Darlington Power Transistors Anwendungen: NF-Endstufen Applications: AF-Output stages Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage


    OCR Scan     		PDF