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    A 12-15 GHZ HIGH GAIN AMPLIFIER TRANSISTOR Search Results

    A 12-15 GHZ HIGH GAIN AMPLIFIER TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GC321AD7LP103KX18J Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC331AD7LQ153KX18J Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC331CD7LQ473KX19K Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC343DD7LP334KX18K Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC355DD7LQ224KX18K Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd

    A 12-15 GHZ HIGH GAIN AMPLIFIER TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    HMC326MS8G

    Abstract: amplifier TRANSISTOR 12 GHZ
    Text: HMC326MS8G MICROWAVE CORPORATION HBT DRIVER AMPLIFIER 3.0 - 4.5 GHz FEBRUARY 2001 1 V00.1200 Features General Description Psat Output Power: +26 dBm The HMC326MS8G is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor HBT MMIC driver amplifier which operates between


    Original     		HMC326MS8G HMC326MS8G amplifier TRANSISTOR 12 GHZ PDF

    Xa3 TRANSISTOR

    Abstract: MCH18 SXA-389 SXA-389B SXA-389Z 267M3502104 sxa389z marking SXA389Z XA3Z
    Text: SXA-389 SXA-389Z Product Description Sirenza Microdevices’ SXA-389 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology


    Original     		SXA-389 SXA-389Z SXA-389 AN-075 SXA-389B EDS-102231 Xa3 TRANSISTOR MCH18 SXA-389B SXA-389Z 267M3502104 sxa389z marking SXA389Z XA3Z PDF

    HMC314

    Abstract: No abstract text available
    Text: HMC314 MICROWAVE CORPORATION HBT DRIVER AMPLIFIER 0.7 - 4.0 GHz V00.1100 FEBRUARY 2001 General Description P1dB Output Power: + 18 dBm The HMC314 is a GaAs InGaP Heterojunction Bipolar Transistor HBT MMIC amplifier that operates from a single positive supply. This


    Original     		HMC314 HMC314 PDF

    HMC313

    Abstract: No abstract text available
    Text: HMC313 MICROWAVE CORPORATION HBT BROADBAND AMPLIFIER GAIN BLOCK DC - 6.0 GHz FEBRUARY 2001 AMPLIFIERS 1 V00.1100 Features General Description P1dB Output Power: +19 dBm The HMC313 is a GaAs InGaP Heterojunction Bipolar Transistor HBT MMIC amplifier that


    Original     		HMC313 HMC313 PDF

    transistor 4216

    Abstract: tl 4216
    Text: Preliminary Product Description Sirenza Microdevices’ SPA-4216 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot.


    Original     		SPA-4216 21mil EDS-102302 SPA-4216" transistor 4216 tl 4216 PDF

    SOT-636-package

    Abstract: silicon bipolar transistor rf power amplifier BGA428 amplifier siemens sot-363 sot636 AN063
    Text: Application Note No. 063 Silicon Discretes A 1.85 GHz High Gain Low Noise Transistor Amplifier using BGA428 Features • Two-stage Low Noise Amplifier • SIEGET 45-Technology with 45 GHz f T • Small outline SOT363-Package • Low Noise Figure: 1.5 dB at 1.85 GHz


    Original     		BGA428 45-Technology OT363-Package OT-363. AN063 SOT-636-package silicon bipolar transistor rf power amplifier BGA428 amplifier siemens sot-363 sot636 AN063 PDF

    Untitled

    Abstract: No abstract text available
    Text: General Purpose, Low Current NPN Silicon Bipolar Transistor Technical Data AT-41532 Features • General Purpose NPN Bipolar Transistor Optimized for Low Current, Low Voltage Applications at 900 MHz, 1.8 GHz, and 2.4 GHz • Performance 5 V, 5 mA 0.9 GHz: 1 dB NF, 15.5 dB GA


    Original     		AT-41532 OT-323 SC-70) SC-70 OT-323) AT-41532 5965-6167E PDF

    SOT 23 AJW

    Abstract: transistor TT 3034 Resistors 2306 181 AT-32032 AT-41532 AT-41532-BLK S21E 41532 mount chip transistor 332
    Text: General Purpose, Low Current NPN Silicon Bipolar Transistor Technical Data AT-41532 Features • General Purpose NPN Bipolar Transistor Optimized for Low Current, Low Voltage Applications at 900 MHz, 1.8 GHz, and 2.4 GHz • Performance 5 V, 5 mA 0.9 GHz: 1 dB NF, 15.5 dB GA


    Original     		AT-41532 OT-323 SC-70) 5965-6167E SOT 23 AJW transistor TT 3034 Resistors 2306 181 AT-32032 AT-41532 AT-41532-BLK S21E 41532 mount chip transistor 332 PDF

    1485C

    Abstract: SE 194 Sirenza amplifier SOT-89
    Text: Product Description Sirenza Microdevices’ SXA-389B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable


    Original     		SXA-389B SXA-389B MPO-100136 016REF 118REF 041REF 015TYP EDS-102915 1485C SE 194 Sirenza amplifier SOT-89 PDF

    HMC324MS8G

    Abstract: No abstract text available
    Text: HMC324MS8G MICROWAVE CORPORATION HBT DUAL DRIVER AMPLIFIER DC - 3.0 GHz V00.1200 FEBRUARY 2001 General Description P1dB Output Power: + 16 dBm The HMC324MS8G is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor HBT MMIC amplifier that contains two un-connected


    Original     		HMC324MS8G HMC324MS8G PDF

    RAYTHEON

    Abstract: Raytheon Company RMPA61810 2 watt rf transistor
    Text: RMPA61810 Single Channel 6-18 GHz 1 Watt Power Amplifier MMIC PRELIMINARY INFORMATION Description Features The Raytheon RMPA61810 is a fully monolithic power amplifier operating over the 6.0 to 18.0 GHz frequency band. The amplifier uses a .25 micron Pseudomorphic High Electron Mobility Transistor PHEMT process to maximize


    Original     		RMPA61810 RMPA61810 RAYTHEON Raytheon Company 2 watt rf transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CGHV22200 200 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22200 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22200F ideal for 1.8 2.2 GHz LTE, 4G Telecom and BWA amplifier applications. The transistor is


    Original     		CGHV22200 CGHV22200 CGHV22200F CGHV22 GHV22200P PDF

    transistor bc 5588

    Abstract: BC 148 TRANSISTOR PIN CONFIGURATION transistor TT 2146 low noise transistor bc 234 transistor BC 575 INFORMATION OF IC 7424 transistor bc 658 1J Sot323
    Text: Who I HEWLETT mL'KM PACKARD Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32032 Features • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Applications at 900 MHz, 1.8 GHz, and 2.4 GHz • Performance at 2.7 V, 5 mA:


    OCR Scan     		AT-32032 SC-70 OT-323) OT-323 SC-70) 5965-6216E transistor bc 5588 BC 148 TRANSISTOR PIN CONFIGURATION transistor TT 2146 low noise transistor bc 234 transistor BC 575 INFORMATION OF IC 7424 transistor bc 658 1J Sot323 PDF

    5.1 amplifier circuits diagram

    Abstract: digital 5.1 amplifier diagram schematic 5.1 amplifier circuit diagram 5.1 amplifier schematic
    Text: Preliminary Product Description Sirenza Microdevices’ SPA-5016 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot.


    Original     		SPA-5016 EDS-102306 SPA-5016" 5.1 amplifier circuits diagram digital 5.1 amplifier diagram schematic 5.1 amplifier circuit diagram 5.1 amplifier schematic PDF

    PJ 0349

    Abstract: PJ 2399 0709s
    Text: mUKM PA C K A R D W hot HEWLETT General Purpose, Low Current NPN Silicon Bipolar Transistor Technical Data AT-41532 Features • General Purpose NPN Bipolar Transistor Optimized for Low Current, Low Voltage Applications at 900 MHz, 1.8 GHz, and 2.4 GHz • Performance 5 V, 5 mA


    OCR Scan     		AT-41532 SC-70 OT-323) OT-323 SC-70) 1-800-Z35-031Z 5965-6167E PJ 0349 PJ 2399 0709s PDF

    celeritek LNA

    Abstract: microwave transducer Tower Mounted Amplifiers Dual Band CDQ0303-QS-0G0T MCH185A101JK PB-CDQ0303-QS-00A0 PB-CDQ0303-QS-00B0 CDQ0303-QS CDQ0303-QS-0G00 Coil Craft 104
    Text: 500-6000 MHz Dual, Ultra Low Noise, High IP3 Amplifier CDQ0303-QS May 2006 - Rev 24-May-06 Features Matched Pair of Transistors for Optimum Balanced Amplifier Design AlGaAs/InGaAs/AlGaAs Pseudomorphic High Electron Mobility Transistor pHEMT High Gain: 25 dB @ 900 MHz


    Original     		CDQ0303-QS 24-May-06 CDQ0303-QS celeritek LNA microwave transducer Tower Mounted Amplifiers Dual Band CDQ0303-QS-0G0T MCH185A101JK PB-CDQ0303-QS-00A0 PB-CDQ0303-QS-00B0 CDQ0303-QS-0G00 Coil Craft 104 PDF

    transistor TT 2146

    Abstract: AT-32032 AT-32032-BLK AT-32032-TR1 60668 transistor ajw 64256
    Text: Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32032 Features • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Applications at 900 MHz, 1.8 GHz, and 2.4 GHz • Performance at 2.7 V, 5 mA: 900 MHz: 1 dB NF, 15 dB GA


    Original     		AT-32032 OT-323 SC-70) SC-70 OT-323) 5965-6216E transistor TT 2146 AT-32032 AT-32032-BLK AT-32032-TR1 60668 transistor ajw 64256 PDF

    xa3b

    Abstract: No abstract text available
    Text: SXA-389B SXA-389BZ Product Description Sirenza Microdevices’ SXA-389B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surfacemountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent


    Original     		SXA-389B SXA-389BZ MPO-100136 016REF 118REF 041REF 015TYP SXA-389B EDS-102915 xa3b PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Product Description Sirenza Microdevices’ SZA-6044 is a high linearity Class A GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam


    Original     		SZA-6044 SZA-6044 SZA-6044" EDS-103535 PDF

    ATF-54143 application notes

    Abstract: ATF54143.s2p low cost hearing aid circuit diagram circuit diagram of low cost hearing aid with applications PIN attenuator ADS model lna 2.5 GHZ s parameter ads design agilent ads combiner circuit diagram of low cost hearing aid agilent pHEMT transistor LNA LOW NOISE AMPLIFIER Tower Mounted Amplifier
    Text: A High IIP3 Balanced Low Noise Amplifier for Cellular Base Station Applications Using the Agilent Enhancement Mode PHEMT ATF-54143 Transistor and Anaren Pico Xinger 3 dB Hybrid Couplers Application Note 1281 Introduction Most base stations BTS can transmit a signal to a mobile


    Original     		ATF-54143 5988-5688EN ATF-54143 application notes ATF54143.s2p low cost hearing aid circuit diagram circuit diagram of low cost hearing aid with applications PIN attenuator ADS model lna 2.5 GHZ s parameter ads design agilent ads combiner circuit diagram of low cost hearing aid agilent pHEMT transistor LNA LOW NOISE AMPLIFIER Tower Mounted Amplifier PDF

    transistor TT 2146

    Abstract: AT-32032 AT-32032-BLK 32032
    Text: AT-32032 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-32032 is a high performance NPN bipolar transistor that has been optimized for maximum ft at low voltage operation, making it ideal for use in battery


    Original     		AT-32032 AT-32032 OT323 SC-70) OT-323 5965-6216E 5989-2644EN transistor TT 2146 AT-32032-BLK 32032 PDF

    SZA-6044

    Abstract: digital 5.1 amplifier diagram schematic 55ghz
    Text: Preliminary Product Description Sirenza Microdevices’ SZA-6044 is a high linearity Class A GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam


    Original     		SZA-6044 SZA-6044 SZA-6044" EDS-103535 digital 5.1 amplifier diagram schematic 55ghz PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Information Product Description Sirenza Microdevices’ SZA-6044 is a high linearity Class A GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam


    Original     		SZA-6044 SZA-6044 SZA-6044" EDS-103535 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Product Description Sirenza Microdevices’ SZA-6044 is a high linearity Class A GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam


    Original     		SZA-6044 SZA-6044 SZA-6044" EDS-103535 PDF