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    A 12-15 GHZ HIGH GAIN AMPLIFIER TRANSISTOR Search Results

    A 12-15 GHZ HIGH GAIN AMPLIFIER TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1ZMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD Visit Toshiba Electronic Devices & Storage Corporation

    A 12-15 GHZ HIGH GAIN AMPLIFIER TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ALM-42316

    Abstract: ALM42316 RO4350 RO4350B 10MILS
    Text: ALM-42316 High Linearity Low-voltage Wireless Data Power Amplifier for 3.3 to 3.8GHz Application Application Note 5381 Introduction This application note describes the application information of Avago Technologies’ ALM-42316, a fully-matched wireless data power amplifier for 3.3-3.8GHz. By using proprietary 0.25um GaAs E-pHEMT process Enhancementmode pseudomorphic high electron mobility transistor ,


    Original     		PDF ALM-42316 ALM-42316, ALM-42316 ALM42316 AV02-1125EN RO4350 RO4350B 10MILS

    HMC326MS8G

    Abstract: amplifier TRANSISTOR 12 GHZ
    Text: HMC326MS8G MICROWAVE CORPORATION HBT DRIVER AMPLIFIER 3.0 - 4.5 GHz FEBRUARY 2001 1 V00.1200 Features General Description Psat Output Power: +26 dBm The HMC326MS8G is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor HBT MMIC driver amplifier which operates between


    Original     		PDF HMC326MS8G HMC326MS8G amplifier TRANSISTOR 12 GHZ

    GaAs pHEMT LOW SOT-343

    Abstract: CLY 2
    Text: GaAs Components Selection Guide 2 Selection Guide GaAs RF-Transistors, MMICs and Modules . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5


    Original     		PDF OT-363 VQFN-16-2 SCT-598 GaAs pHEMT LOW SOT-343 CLY 2

    cf sot-363

    Abstract: GaAs FET cfy 14 GaAs pHEMT LOW NOISE MMIC AMPLIFIER SOT-343 cfy 14 121B 801C SCT-595 CFY30 TSSOP-10-2 CFY 18
    Text: GaAs Components Selection Guide GaAs RF-Transistors, MMICs and Modules . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2


    Original     		PDF OT-363 SCT-598 cf sot-363 GaAs FET cfy 14 GaAs pHEMT LOW NOISE MMIC AMPLIFIER SOT-343 cfy 14 121B 801C SCT-595 CFY30 TSSOP-10-2 CFY 18

    atf54143 pHEMT

    Abstract: ATF54143.s2p ATF54143 ATF-54143 RF MESFET S parameters AN-1286 equivalent AN1222 BCV62B ATF-54143 application notes Closest Infineon Equivalent
    Text: A 802.11a WLAN Driver Amplifier using Enhancement Mode PHEMT ATF-54143 Transistor Application Note 1286 Systems using the IEEE 802.11a standard will soon appear on the market to take advantage of higher data rates and more frequency channels for even greater performance. Typical first generation integrated


    Original     		PDF ATF-54143 MTT-28, ECEN4228 5988-5845EN atf54143 pHEMT ATF54143.s2p ATF54143 RF MESFET S parameters AN-1286 equivalent AN1222 BCV62B ATF-54143 application notes Closest Infineon Equivalent

    ATF-54143 application notes

    Abstract: ATF54143.s2p ATF-54143 atf54143 pHEMT Curtice AN1222 ATF54143 BCV62B agilent pHEMT transistor agilent ads
    Text: A 802.11a WLAN Driver Amplifier using the Agilent Enhancement Mode PHEMT ATF-54143 Transistor Application Note 1286 Introduction Device Selection The driver amplifiers described in this application note are for use in applications covering 5.0 GHz to 5.8 GHz. This frequency range


    Original     		PDF ATF-54143 5988-5845EN ECEN4228 ATF-54143 ATF-54143 application notes ATF54143.s2p atf54143 pHEMT Curtice AN1222 ATF54143 BCV62B agilent pHEMT transistor agilent ads

    GRM32ER7YA106K88L

    Abstract: AN10847 3214W-1-201E CRCW08052K00FKTA ATC100B150JT500X GRM31MR71H105K88L 7808 cw cw 7808 GMSK fm potentiometer 201E
    Text: AN10847 Doherty RF performance analysis using the BLF6G20-230PRN Rev. 01 — 29 January 2010 Application note Document information Info Content Keywords RF power transistors, Doherty amplifiers, main amplifier, peak amplifier, AB amplifiers, RF performance, Digital PreDistortion DPD , base station


    Original     		PDF AN10847 BLF6G20-230PRN BLF6G20-230PRN, AN10847 GRM32ER7YA106K88L 3214W-1-201E CRCW08052K00FKTA ATC100B150JT500X GRM31MR71H105K88L 7808 cw cw 7808 GMSK fm potentiometer 201E

    INA-03170

    Abstract: INA-01170 INA-02170 INA-03 6679 az ina series AN-S003 INA-10386 mmic ina INA-01
    Text: INA Series RFIC Amplifiers Application Note S012 Introduction The INA series amplifiers are part of Hewlett-Packard’s product line of silicon bipolar RF Integrated Circuits built with HP’s ISOlated Self Aligned Transistor ISOSAT process. These devices are 50 ohm


    Original     		PDF INA-02170. INA-01170, INA-03170, INA-10386. AN-S011: INA-03170 INA-01170 INA-02170 INA-03 6679 az ina series AN-S003 INA-10386 mmic ina INA-01

    RF TRANSISTOR 1.5 GHZ dual gate

    Abstract: RMPA61800 CuMoCu
    Text: RMPA61800 Dual Channel 6-18 GHz 2 Watt Power Amplifier MMIC PRELIMINARY INFORMATION Description Features The Raytheon RMPA61800 is a fully monolithic dual channel power amplifier operating over the 6.0 to 18.0 GHz frequency band. The amplifier uses a .25 micron Pseudomorphic High Electron Mobility Transistor PHEMT


    Original     		PDF RMPA61800 RMPA61800 RF TRANSISTOR 1.5 GHZ dual gate CuMoCu

    ina series

    Abstract: Signal Path Designer AN-S003
    Text: INA Series RFIC Amplifiers Application Note S012 Introduction The INA series amplifiers are part of Hewlett-Packard’s product line of silicon bipolar RF Integrated Circuits built with HP’s ISOlated Self Aligned Transistor ISOSAT process. These devices are 50 ohm


    Original     		PDF INA-02: INA-03: INA-10: AN-S011: 5965-8670E ina series Signal Path Designer AN-S003

    CGH09120F

    Abstract: CGH25120F CDPA21480 CGH27060F ofdm predistortion CGH55030F 440117 CGH21120F CGH21240F CGH27015F
    Text: Gallium Nitride GaN HEMT Transistors for BTS Applications Cree’s Doherty CDPA21480, performance. CGH21240F demonstration provides amplifier innovative The amplifier devices with uses digital two CDPA21480 Spectrum at 2.11, 2.14 & 2.17 GHz PAVE = 49 dBm, 2-Carrier WCDMA, PAR = 7.5 dB with CFR


    Original     		PDF CDPA21480, CGH21240F CDPA21480 CGH09120F CGH25120F CGH27060F ofdm predistortion CGH55030F 440117 CGH21120F CGH21240F CGH27015F

    RAYTHEON

    Abstract: RMPA61810 25 uF capacitor
    Text: RMPA61810 Single Channel 6-18 GHz 1 Watt Power Amplifier MMIC PRODUCT INFORMATION Description Features The Raytheon RMPA61810 is a fully monolithic power amplifier operating over the 6.0 to 18.0 GHz frequency band. The amplifier uses a 0.25 micron Pseudomorphic High Electron Mobility Transistor PHEMT process to maximize


    Original     		PDF RMPA61810 RMPA61810 600mA RAYTHEON 25 uF capacitor

    12 volts 50 watt amplifier schematic diagram

    Abstract: CuMoCu copper bond wire
    Text: iTR61810 Single Channel 6-18 GHz 1 Watt Power Amplifier MMIC Description Features The iTR61810 is a fully monolithic power amplifier operating over the 6.0 to 18.0 GHz frequency band. The amplifier uses a 0.25 micron Pseudomorphic High Electron Mobility Transistor PHEMT


    Original     		PDF iTR61810 iTR61810 600mA 12 volts 50 watt amplifier schematic diagram CuMoCu copper bond wire

    Xa3 TRANSISTOR

    Abstract: MCH18 SXA-389 SXA-389B SXA-389Z 267M3502104 sxa389z marking SXA389Z XA3Z
    Text: SXA-389 SXA-389Z Product Description Sirenza Microdevices’ SXA-389 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology


    Original     		PDF SXA-389 SXA-389Z SXA-389 AN-075 SXA-389B EDS-102231 Xa3 TRANSISTOR MCH18 SXA-389B SXA-389Z 267M3502104 sxa389z marking SXA389Z XA3Z

    HMC314

    Abstract: No abstract text available
    Text: HMC314 MICROWAVE CORPORATION HBT DRIVER AMPLIFIER 0.7 - 4.0 GHz V00.1100 FEBRUARY 2001 General Description P1dB Output Power: + 18 dBm The HMC314 is a GaAs InGaP Heterojunction Bipolar Transistor HBT MMIC amplifier that operates from a single positive supply. This


    Original     		PDF HMC314 HMC314

    TBT-03M1

    Abstract: CMPA0060005F Tecdia Cree Microwave Gan on silicon transistor CMPA0060005F-TB CMPA2560002F
    Text: PRELIMINARY CMPA0060005F 5 W, 20 MHz - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA0060005F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA0060005F CMPA0060005F TBT-03M1 Tecdia Cree Microwave Gan on silicon transistor CMPA0060005F-TB CMPA2560002F

    9452

    Abstract: RAYTHEON RMPA61800 amplifier TRANSISTOR 12 GHZ
    Text: RMPA61800 Dual-Channel 6-18 GHz 2W MMIC Power Amplifier The Raytheon RMPA61800 is a fully monolithic power amplifier operating over the 6.0 to 18.0 GHz frequency band. The amplifier uses a .25 micron Pseudomorphic High Electron Mobility Transistor PHEMT process to


    Original     		PDF RMPA61800 RMPA61800 600mA 9452 RAYTHEON amplifier TRANSISTOR 12 GHZ

    HMC313

    Abstract: No abstract text available
    Text: HMC313 MICROWAVE CORPORATION HBT BROADBAND AMPLIFIER GAIN BLOCK DC - 6.0 GHz FEBRUARY 2001 AMPLIFIERS 1 V00.1100 Features General Description P1dB Output Power: +19 dBm The HMC313 is a GaAs InGaP Heterojunction Bipolar Transistor HBT MMIC amplifier that


    Original     		PDF HMC313 HMC313

    Untitled

    Abstract: No abstract text available
    Text: CGH21120F 120 W, 1800-2300 MHz, GaN HEMT for WCDMA, LTE, WiMAX Cree’s CGH21120F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH21120F ideal for


    Original     		PDF CGH21120F CGH21120F CGH2112

    transistor 4216

    Abstract: tl 4216
    Text: Preliminary Product Description Sirenza Microdevices’ SPA-4216 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot.


    Original     		PDF SPA-4216 21mil EDS-102302 SPA-4216" transistor 4216 tl 4216

    SOT-636-package

    Abstract: silicon bipolar transistor rf power amplifier BGA428 amplifier siemens sot-363 sot636 AN063
    Text: Application Note No. 063 Silicon Discretes A 1.85 GHz High Gain Low Noise Transistor Amplifier using BGA428 Features • Two-stage Low Noise Amplifier • SIEGET 45-Technology with 45 GHz f T • Small outline SOT363-Package • Low Noise Figure: 1.5 dB at 1.85 GHz


    Original     		PDF BGA428 45-Technology OT363-Package OT-363. AN063 SOT-636-package silicon bipolar transistor rf power amplifier BGA428 amplifier siemens sot-363 sot636 AN063

    ATC600F

    Abstract: ATC600S CGH2124 CGH21240F CGH21240F-TB RO4350
    Text: PRELIMINARY CGH21240F 240 W, 1800-2300 MHz, GaN HEMT for WCDMA, LTE, WiMAX Cree’s CGH21240F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH21240F ideal for


    Original     		PDF CGH21240F CGH21240F CGH2124 ATC600F ATC600S CGH2124 CGH21240F-TB RO4350

    circuit diagram of hearing aid using transistors

    Abstract: ATF54143.s2p low cost hearing aid circuit diagram ATF-54143 application notes stripline power combiner splitter ATF54143 circuit diagram of digital hearing aid AN1222 IMT-2000 JP503
    Text: A High IIP3 Balanced Low Noise Amplifier for Cellular Base Station Applications Using Enhancement Mode PHEMT ATF-54143 Transistor and Anaren Pico Xinger 3 dB Hybrid Couplers Application Note 1281 Introduction Most base stations BTS can transmit a signal to a


    Original     		PDF ATF-54143 MTT-28, ATF54143 5988-5688EN circuit diagram of hearing aid using transistors ATF54143.s2p low cost hearing aid circuit diagram ATF-54143 application notes stripline power combiner splitter circuit diagram of digital hearing aid AN1222 IMT-2000 JP503

    N-Channel, Dual-Gate FET

    Abstract: CF750 GaAs pHEMT Low Noise MMIC Amplifier sot-343 N-channel dual-gate GaAs MESFET
    Text: Ga As Components Infineon ? a c Kn o ! o 9 i a s Selection Guide 2 Selection Guide GaAs RF-Transistors, MMICs and Modules. 5 Dual-Gate GaAs F E T s.


    OCR Scan     		PDF OT-363 OT-363 VQFN-16-2 SCT-598 N-Channel, Dual-Gate FET CF750 GaAs pHEMT Low Noise MMIC Amplifier sot-343 N-channel dual-gate GaAs MESFET