Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    CGHV22200F Search Results

    CGHV22200F Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    CGHV22200F Cree RF FETs, Discrete Semiconductor Products, MOSF RF 125V 12A 2.2GHZ 440162 Original PDF

    CGHV22200F Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: CGHV22200 200 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22200 is a gallium nitride GaN high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22200F ideal for 1.8 - 2.2


    Original     		PDF CGHV22200 CGHV22200 CGHV22200F CGHV22 GHV22200P

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CGHV22200 200 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22200 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22200F ideal for 1.8 2.2 GHz LTE, 4G Telecom and BWA amplifier applications. The transistor is


    Original     		PDF CGHV22200 CGHV22200 CGHV22200F CGHV22 GHV22200P

    Untitled

    Abstract: No abstract text available
    Text: CGHV22200 200 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22200 is a gallium nitride GaN high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22200F ideal for 1.8 - 2.2


    Original     		PDF CGHV22200 CGHV22200 CGHV22200F CGHV22 GHV22200P

    CGHV22200

    Abstract: No abstract text available
    Text: PRELIMINARY CGHV22200 200 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22200 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22200F ideal for 1.8 2.2 GHz LTE, 4G Telecom and BWA amplifier applications. The transistor is


    Original     		PDF CGHV22200 CGHV22200 CGHV22200F CGHV22 GHV22200P CGHV22200-TBions

    idq10

    Abstract: No abstract text available
    Text: PRELIMINARY CGHV22200 200 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22200 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22200F ideal for 1.8 2.2 GHz LTE, 4G Telecom and BWA amplifier applications. The transistor is


    Original     		PDF CGHV22200 CGHV22200 CGHV22200F CGHV22 GHV22200P CGHV22200-TBions idq10