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    XA2 MMIC

    Abstract: TOP MARKING C1 ROHM lot No MPO-100136 SIRENZA Sirenza C4 marking
    Text: Preliminary Product Description SXA-289 Sirenza Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable


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    PDF SXA-289 SXA-289 MPO-100136 016REF 118REF 041REF 015TYP EDS-100622 XA2 MMIC TOP MARKING C1 ROHM lot No SIRENZA Sirenza C4 marking

    1485C

    Abstract: SE 194 Sirenza amplifier SOT-89
    Text: Product Description Sirenza Microdevices’ SXA-389B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable


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    PDF SXA-389B SXA-389B MPO-100136 016REF 118REF 041REF 015TYP EDS-102915 1485C SE 194 Sirenza amplifier SOT-89

    Xa3 TRANSISTOR

    Abstract: 041R 267M3502104 MCH18 SXA-389 MMIC "SOT 89" marking
    Text: Product Description SXA-389 Sirenza Microdevices’ SXA-389 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable


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    PDF SXA-389 SXA-389 MPO-100136 016REF 118REF 041REF 015TYP EDS-102231 Xa3 TRANSISTOR 041R 267M3502104 MCH18 MMIC "SOT 89" marking

    MCH18

    Abstract: SXA-389B xa3b EL115
    Text: Preliminary Product Description SXA-389B Sirenza Microdevices’ SXA-389B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular


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    PDF SXA-389B SXA-389B MPO-100136 016REF 118REF 041REF 015TYP EDS-102915 MCH18 xa3b EL115

    F103Z CAPACITOR

    Abstract: b221k B221K capacitor
    Text: アキシャルリード形セラミックコンデンサ AXIAL LEADED CERAMIC CAPACITORS OPERATING TEMP. −25~+85℃ 特長 FEATURES ・汎用型セラミックコンデンサで単層形と積層形合わせて1pF∼10 Fと 広い容量範囲で部品の標準化が可能


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    PDF 1pF10F 5mm26mm F103Z CAPACITOR b221k B221K capacitor

    xa3b

    Abstract: No abstract text available
    Text: SXA-389B SXA-389BZ Product Description Sirenza Microdevices’ SXA-389B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surfacemountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent


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    PDF SXA-389B SXA-389BZ MPO-100136 016REF 118REF 041REF 015TYP SXA-389B EDS-102915 xa3b

    XA2 MMIC

    Abstract: MPO-100136 TOP MARKING C1 ROHM lot No
    Text: Preliminary Product Description SXA-289 Sirenza Microdevices’ SXA-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable


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    PDF SXA-289 SXA-289 MPO-100136 016REF 118REF 041REF 015TYP EDS-100622 XA2 MMIC TOP MARKING C1 ROHM lot No

    F103Z CAPACITOR

    Abstract: CAPACITOR B102K 50V UP025 B331K b102k b103k B222M UP050B103K B561K b152k
    Text: アキシャルリード形セラミックコンデンサ AXIAL LEADED CERAMIC CAPACITORS OPERATING TEMP. −25~+85℃ 特長 FEATURES ・汎用型セラミックコンデンサで単層形と積層形合わせて1pF∼10 Fと 広い容量範囲で部品の標準化が可能


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    PDF 1pF10F 5mm26mm F103Z CAPACITOR CAPACITOR B102K 50V UP025 B331K b102k b103k B222M UP050B103K B561K b152k

    267M3502104K

    Abstract: 2425-C
    Text: Preliminary Product Description SXB-4089 Sirenza Microdevices’ SXB-4089 amplifier is a high efficiency InGaP/ GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost, surface-mountable plastic package. 400-2500 MHz ½ W Medium Power InGaP/GaAs HBT Amplifier with


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    PDF SXB-4089 SXB-4089 45propriate MPO-100136 016REF 118REF 041REF 015TYP EDS-103215 267M3502104K 2425-C

    RF AMP marking c7 sot-89

    Abstract: marking 25 mmic sot-89 9C0603 ordering Sirenza amplifier SOT-89 Marking
    Text: Preliminary Product Description SXB-4089 Sirenza Microdevices’ SXB-4089 amplifier is a high efficiency InGaP/ GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost, surface-mountable plastic package. 400-2500 MHz ½ W Medium Power InGaP/GaAs HBT Amplifier with


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    PDF SXB-4089 SXB-4089 45propriate MPO-100136 016REF 118REF 041REF 015TYP EDS-103215 RF AMP marking c7 sot-89 marking 25 mmic sot-89 9C0603 ordering Sirenza amplifier SOT-89 Marking

    f103z

    Abstract: B102K F104Z B391K CH431 TP050 PF-100000 UP050
    Text: アキシャルリード形セラミックコンデンサ AXIAL LEADED CERAMIC CAPACITORS OPERATING TEMP. −25~+85℃ 特長 FEATURES ・汎用型セラミックコンデンサで単層形と積層形合わせて1pF∼10 Fと 広い容量範囲で部品の標準化が可能


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    PDF 1pF10F 5mm26mm 535458586106kPa 2607086106kPa f103z B102K F104Z B391K CH431 TP050 PF-100000 UP050

    InGaAs apd photodiode

    Abstract: GR-253-CORE IEC-60825 TD10
    Text: OCP DTR-2488-SM-LC/LS-W-G OC-48/STM-16 2x5 SFF Single Mode Transceivers Features ; Compliant with SONET/SDH OC-48/STM-16 Specifications ; Short, Intermediate and Long Reaches ; Eye Safe Class I Laser Safety ; Multi-sourced 2x5 Package Style ; Duplex LC Optical Interface


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    PDF DTR-2488-SM-LC/LS-W-G OC-48/STM-16 OC-48/STM-16 10-pin DTR-2488-SM-LC/LS-W-G InGaAs apd photodiode GR-253-CORE IEC-60825 TD10

    Untitled

    Abstract: No abstract text available
    Text: CND, C N K S eries Wire Wrap and Round Tail Dip Solder Term inations SPECIFICATIONS ELECTRICAL Phenolic, glass reinforced per MIL-M-14, type MFH, U.L. 94V-0 approved, color black Thermoplastic Polyester, glass rein­ forced, U.L. 94V-0 approved, color black


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    PDF MIL-M-14,

    Untitled

    Abstract: No abstract text available
    Text: JN D , J N K , S eries W ire W rap an d R ound T ail Dip S o ld e r T e rm in a tio n s SPECIFICATIONS ELECTRICAL Phenolic, glass reinforced per MIL-M-14, type MFH, U.L. 94V-0 approved, color black Thermoplastic Polyester, glass rein­ forced, U.L. 94V-0 approved, color black


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    PDF MIL-M-14, te002 R00S3

    Untitled

    Abstract: No abstract text available
    Text: ELECTRICAL C H A RA CTERISTICS: Turns Ratio: chip-line 1:2±2% @ 100kHz,50mV Inductance: 1-5 with 2-4 short 1.76mH ±10% @ 100kHz,100mV Longitudinal Balance: >50dB @ 20kHz to 600kHz THD: 10kHz 77dB Min @4.95Vrms DC Resistance: 7-9,4-1,5-2 0.60 Ohms Max @ 25°C


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    PDF 100kHz 100mV 20kHz 600kHz 10kHz 95Vrms 2000Vrms TMT60012CA TMT60012CT