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    A 1060 14 EQUIVALENT Search Results

    A 1060 14 EQUIVALENT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A Visit Toshiba Electronic Devices & Storage Corporation
    SF Impression Pixel

    A 1060 14 EQUIVALENT Price and Stock

    Mean Well EPS-25-5

    AC/DC Power Supply - 1 Output - 5V@5.5A - 25W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com EPS-25-5 1,280
    • 1 $11.6
    • 10 $10.6
    • 100 $10.2
    • 1000 $10.2
    • 10000 $10.2
    		Buy Now

    A 1060 14 EQUIVALENT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PerkinElmer tr 1700

    Abstract: PerkinElmer Avalanche Photodiode
    Text: Features and Benefits PerkinElmer’s new family of APD modules features built in amplifier and thermoelectric cooler. They are ideal for demanding LIDAR and range-finding applications. Ultra low noise equivalent power NEP Introduction The new LLAM series of avalanche


    Original     		PDF 12-lead DTS0108P PerkinElmer tr 1700 PerkinElmer Avalanche Photodiode

    tef 6624

    Abstract: SEG382 Hitachi DSA002733 1301H
    Text: HD66763 384-channel Segment Driver with Internal RAM for 256-color Displays Rev.1.0 July, 2001 Description The HD66763, 384-channel segment driver LSI, displays 128RGB-by-176-dot graphics on STN displays in 256 colors. It is for driving STN color LCD displays to a maximum of 128RGB by 176


    Original     		PDF HD66763 384-channel 256-color HD66763, 128RGB-by-176-dot 128RGB HD66764 HD66763 16bit tef 6624 SEG382 Hitachi DSA002733 1301H

    scr tic 1060

    Abstract: tic 1060 BH 1060 TSI 568 HD6432655F REJ09B0331-0500 CMOS HD6432653 HD6472655F BCRH HD6432653
    Text: REJ09B0331-0500 The revision list can be viewed directly by clicking the title page. The revision list summarizes the locations of revisions and additions. Details should always be checked by referring to the relevant text. H8S/2655 Group 16 Hardware Manual


    Original     		PDF REJ09B0331-0500 H8S/2655 16-Bit Family/H8S/2600 H8S/2655 H8S/2653 HD6432655 HD6472655 HD6432653 dama2730-6071 scr tic 1060 tic 1060 BH 1060 TSI 568 HD6432655F REJ09B0331-0500 CMOS HD6432653 HD6472655F BCRH HD6432653

    free transistor equivalent book

    Abstract: Nippon capacitors japan transistors book
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF H8S/2655 REJ09B0331-0500 free transistor equivalent book Nippon capacitors japan transistors book

    smooth l 7251 3.1

    Abstract: gk71 tef 6624 l 7251 wd S-E26 GK 105 Hitachi DSAUTAZ006 SEG270 gk43 c 1060
    Text: —PRELIMINARY— HD66763 384-channel Segment Driver with Internal RAM for 256-color Displays n o ti Preliminary Specification Rev.0.4 January, 2001 a c fi i c e Description Sp The HD66763, 384-channel segment driver LSI, displays 128RGB-by-176-dot graphics on STN


    Original     		PDF HD66763 384-channel 256-color HD66763, 128RGB-by-176-dot 128RGB HD66764 HD66763 16bit smooth l 7251 3.1 gk71 tef 6624 l 7251 wd S-E26 GK 105 Hitachi DSAUTAZ006 SEG270 gk43 c 1060

    Untitled

    Abstract: No abstract text available
    Text: STAC1011-350 LDMOS avionics radar transistor Datasheet - production data Features • Excellent thermal stability • Common source configuration push-pull • POUT = 350 W with 15 dB gain over 1030 1090 MHz • ST Air Cavity / STAC package Description STAC265B


    Original     		PDF STAC1011-350 STAC265B STAC1011-350 DocID022043

    C30817E

    Abstract: SILICON APD Pre-Amplifier
    Text: DATASHEET Photon Detection C30659 Series 900/1060/1550/1550E Si and InGaAs APD Preamplifier Modules Key Features E C -1550E InGasAs APD Preamplifier Modules exhibit enhanced damage threshold and greater resilience when exposed to higher optical power densities.


    Original     		PDF C30659 900/1060/1550/1550E -1550E C30817EH, C30902EH, C30954EH C30956EH C30645EH C30662EH C30817E SILICON APD Pre-Amplifier

    ST T8 1060

    Abstract: ST T4 1060 l0741 L0148 1090mhz ATC100A300JP
    Text: STAC1011-350 LDMOS avionics radar transistor Datasheet — preliminary data Features • Excellent thermal stability ■ Common source configuration push-pull ■ POUT = 350 W with 15 dB gain over 1030 1090 MHz ■ ST Air Cavity / STAC package Description


    Original     		PDF STAC1011-350 STAC1011-350 STAC265B ST T8 1060 ST T4 1060 l0741 L0148 1090mhz ATC100A300JP

    L1128

    Abstract: L038 1030-1090MHz
    Text: STAC1011-350 RF power transistor from the LdmoST family of N-channel enhancement-mode lateral MOSFETs Preliminary data Features • Excellent thermal stability ■ Common source configuration push-pull ■ POUT = 350 W with 15 dB gain over 1030 1090 MHz ■


    Original     		PDF STAC1011-350 STAC1011-350 STAC265B L1128 L038 1030-1090MHz

    Untitled

    Abstract: No abstract text available
    Text: 3M Wiremount Socket .100” x .100” for .050” Pitch Cable Optional Plastic or Metal Strain Relief 3000 Series • Industry standard IDC socket • Positive locking metal “J” clips provide high cover retention • Mates with 3M headers, plugs and pin strips for quick


    Original     		PDF RIA-2217B-E

    TS-0718-F

    Abstract: 3443-94
    Text: 3M Wiremount Socket .100” x .100” for .050” Pitch Cable Optional Plastic or Metal Strain Relief 3000 Series • Industry standard IDC socket • Positive locking metal “J” clips provide high cover retention • Mates with 3M headers, plugs and pin strips for quick connect/


    Original     		PDF RIA-2217B-E TS-0718-F 3443-94

    Rf amplifier with frequency 1150 MHZ 20 db gain

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistor MRF10150 . . . designed for 1025 – 1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz Output Power = 150 Watts Peak


    Original     		PDF MRF10500 MRF10150 MRF10150 Rf amplifier with frequency 1150 MHZ 20 db gain

    376B

    Abstract: MRF10150 MRF10500
    Text: Order this document by MRF10150/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistor MRF10150 . . . designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz


    Original     		PDF MRF10150/D MRF10150 376B MRF10150 MRF10500

    photodioda

    Abstract: N10-13 laser rca rca 210 C30895
    Text: 1GE D • I 74fi4b75 D D O D i n A INC/ ELECTRO OPTICS VICil H I Photodiode C30895 DATASHEET Silicon Avalanche Photodiode Optimized for High Responsivity and Very Low Noise at 1060 Nanometers ■ Noise Equivalent Pow er NEP a t 1060 n m — 7.5 x 1 0 14 W /Hz1'2 max.


    OCR Scan     		PDF 4fi4b75 C30895 C30895 ED-0028/10/88 photodioda N10-13 laser rca rca 210

    tic 1060

    Abstract: rca 923 C30895 5252 F led rca 514 5252 F 5252 S RCA 411
    Text: E G & G/CANADA/OPTOELEK BDBDbl D O O O O i n ID <123 H C A N A T-W-Si Photodiode R G i l Optics C30895 D A TA S H E ET Silicon Avalanche Photodiode Optim ized fo r High Responsivity and V e ry Lo w Noise at 1060 Nanom eters • Noise Equivalent Power NEP a t 1060 nm — 7.5 x 1 0 14 W/Hz1/2 max.


    OCR Scan     		PDF C30895 Range--46Â C30895 ED-0028/10/88 tic 1060 rca 923 5252 F led rca 514 5252 F 5252 S RCA 411

    Untitled

    Abstract: No abstract text available
    Text: E G & G/CANADA/OPTOELEK ID D WM il ÆM E l e c t r o Im lf#IO p t i c s 30 3 0 b l D D O D O I B ^ 711 H C A N A Photodiode7^Vhi7 C30919E DATA SH EET Photodiode-Preamplifier Module Completely Hybridized Temperature-Compensated Silicone Avalanche Photodiode-Preamplifier Module


    OCR Scan     		PDF C30919E 3030bl0 W/-67

    C30919E

    Abstract: avalanche photodiode bias photodiode amplifier rise time avalanche photodiode
    Text: JJ^EG sG CANADA LTD. Optoelectronics Division Formerly ItGJl Effective January 1,1991 tro :ics Photodiode C30919E DATA SHEET U Photodiode-Preamplifier Module Completely Hybridized Temperature-Compensated Silicone Avalanche Photodiode-Preamplifier Module


    OCR Scan     		PDF C30919E 92LS-58S1 C30919E avalanche photodiode bias photodiode amplifier rise time avalanche photodiode

    ELLS 110

    Abstract: avalanche photodiode bias avalanche photodiode preamplifier voltage C30919E
    Text: E G & G/CANADA/OPTOELEK 1 3D30blD DDDDIB^ 711 « C A N A WM MWk ÆWElectro I i l i # Ph o to d io d e Hhil C30919E DATA SH EET • Optics Photodiode-Preamplifier Module Completely Hybridized Temperature-Compensated Silicone Avalanche Photodiode-Preamplifier Module


    OCR Scan     		PDF 3D30bl0 00D0141 C30919E 0-27SI ELLS 110 avalanche photodiode bias avalanche photodiode preamplifier voltage C30919E

    Ignitron

    Abstract: ignitron philips A 1060 14 equivalent 7L120 ,ignitron philips Ignitron 5552 a Ignitron 5552 Scans-0018000 pl5552 PL5552A
    Text: PHILIPS PL 5552 Water cooled IGNITRON IGNITRON à refroidissement par l'eau Wassergekühltes IGNITRON Application: A.C. control; two tubes in inverse parallel connection will control 1200 kVA at 250 600 V and 1060 kVA at 220 V Power rectification; for energy storage of


    OCR Scan     		PDF PL5552 Ignitron ignitron philips A 1060 14 equivalent 7L120 ,ignitron philips Ignitron 5552 a Ignitron 5552 Scans-0018000 pl5552 PL5552A

    tic 1060

    Abstract: No abstract text available
    Text: G E ELECTRO OPTICS R C il IQ D 3Ö741S4 □□0013e 1 « G E E O PhotodiodeHhbl C30919E DATASHEET Optics Photodlode-Preamplifier Module Completely Hybridized Temperature-Compensated Silicone Avalanche Photodiode-Preamplifier Module • Responsivity Temperature Compensated to +10% for 1060 nm


    OCR Scan     		PDF 741S4 0013e C30919E QQQ0141 C30919E tic 1060

    RCA 014

    Abstract: emitter "1060 nm" C30974E rca linear "photodiode " 011 photodiode Avalanche photodiode avalanche photodiode bias
    Text: E G & G/CANADA/OPTOELEK IO 3D3ühlD DDDD157 737 • CANA ItCilE T - H - Î 7 Si Photodiode C30974E DATA SHEET Optics Rectangular Silicon Avalanche Photodiode Preamplifier Module ■ Responsivity at TA = 25°C 3.7 x 10s V/W at 900 ran — 1.8 x 10s V/W at 1060 mn


    OCR Scan     		PDF 3D30hl0 C30974E C30974E 12-lead ED-0034/10/88 RCA 014 emitter "1060 nm" rca linear "photodiode " 011 photodiode Avalanche photodiode avalanche photodiode bias

    C30950E

    Abstract: C30950EL C30950 equivalent C30817 30950G RCA Solid State C30950 C30902 C30902E
    Text: ELECTRO OPTICS R C IDE D /1 m Electro O ptics and Devices 3Û741S4 □□OODMM 1 m GEEO _ T ' - H l - io ~ J Solid State Detectors Developmental Types C30950 Series Photodiodes Very Wide Bandpass Silicon Avalanche Photodiode Preamplifier Modules Available With Integral Light Pipes For Fiber Optic


    OCR Scan     		PDF 741S4 C30950 6x10s 9x10s 9x104 C30950E C30950EL C30950 equivalent C30817 30950G RCA Solid State C30902 C30902E

    TO-18CAN

    Abstract: No abstract text available
    Text: 8255271 SILONEX S ILO N E X 73C U 0 2 4 6 IN C 73 INC DE | Ô 5 S S 5 7 1 OaaOELlb 1 _ r - *} " S 3 - D 'SÏLONEX NSL-530 PIN PHOTODIODE FEATURES NSL-530 • Low Operating Voltage, V r = 45 V • Anti-Reflection Coated to Enhance Responsivity at 900 nm • Spectral Response Range, 400 to


    OCR Scan     		PDF NSL-530 NSL-530 1000Hz, TO-18CAN

    tic 1060

    Abstract: No abstract text available
    Text: E G & G/C ANADA/OPTOELEK ID 303Qb]>a DOOGIGI 7^3 « C A N A Photodiode i t e i C30807, C30808, C30809 Optics E ,e c t n o l C30810, C30822, C30831 DATA SHEET V l ’ S " 3 N-Type Silicon p-i-n Photodetectors L-571 C30810 1-568 C30807 C30831 C30808 C30809,


    OCR Scan     		PDF 303Qb] C30807, C30808, C30809 C30810, C30822, C30831 C30808 C30809, C30822 tic 1060