Q67040-S4009-A2
Abstract: SPP31N05
Text: BUZ 103 S Preliminary data SPP31N05 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • 175°C operating temperature Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 103 S 55 V 31 A 0.04 Ω
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SPP31N05
O-220
Q67040-S4009-A2
04/Nov/1997
Q67040-S4009-A2
SPP31N05
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marking 15430
Abstract: No abstract text available
Text: Thin-Film Cascadable Amplifier 10 to 100 MHz Technical Data UTO/UTC 103 Series Features Description Pin Configuration • Frequency Range: 10 to 100 MHz The 103 Series is a single-stage high-gain silicon bipolar amplifler that incorporates thin-film technology. Low noise figure and high
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Untitled
Abstract: No abstract text available
Text: Thin-Film Cascadable Amplifier 10 to 100 MHz Technical Data UTO/UTC 103 Series Features Description Pin Configuration • Frequency Range: 10 to 100 MHz The 103 Series is a single-stage high-gain silicon bipolar amplifler that incorporates thin-film technology. Low noise figure and high
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CDMA2000-1X
Abstract: RAYTHEON RMPA1956-103
Text: RMPA1956-103 - 3.5 V Dual Band Tri-Mode AMPS, CDMA & CDMA2000-1X Power Amplifier Module RF Components PRODUCT INFORMATION Description Features The RMPA1956-103 is a power amplifier for AMPS, CDMA and CDMA2000-1X personal communications system PCS applications. The PA operates over both the Cellular and PCS bands.
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RMPA1956-103
CDMA2000-1X
RAYTHEON
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RAYTHEON
Abstract: RMPA2053-103
Text: RMPA2053-103 3V WCDMA Power Amplifier Module with Analog Bias Control ADVANCED INFORMATION Description Features The RMPA2053-103 is a power amplifier module PAM for 3GPP Wideband CDMA (WCDMA) applications. The PAM has been specifically designed for low current draw at low power levels while maintaining high power
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RMPA2053-103
RMPA2053-103
RAYTHEON
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RAYTHEON
Abstract: CDMA2000-1X RMPA1953-103 RAYTHEON INC, INTERFACE ACPR24
Text: RMPA1953-103 3V PCS CDMA & CDMA2000 Power Amplifier Module with Digital Bias Control ADVANCED INFORMATION Description Features The RMPA1953-103 is a power amplifier for CDMA and CDMA2000-1X personal communications system PCS applications. The PA is internally matched to 50 ohms to minimize the use of external components. Advanced DC
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RMPA1953-103
CDMA2000
RMPA1953-103
CDMA2000-1X
RAYTHEON
RAYTHEON INC, INTERFACE
ACPR24
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A706 transistor
Abstract: No abstract text available
Text: 3 H Avantek Products Thin-Film Cascadable Amplifier 10 to 100 MHz Technical Data UTO/UTC 103 Series Features Description Pin Configuration • Frequency Range: 10 to 100␣MHz The 103 Series is a single-stage high-gain silicon bipolar amplifler that incorporates thin-film technology. Low noise figure and high
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100MHz
5963-2481E
A706 transistor
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Untitled
Abstract: No abstract text available
Text: RMPA1956-103 3.5 V Dual Band Tri-Mode AMPS, CDMA & CDMA2000-1X Power Amplifier Module ADVANCED INFORMATION Description Features The RMPA1956-103 is a power amplifier for AMPS, CDMA and CDMA2000-1X personal communications system PCS applications. The PA operates over both the Cellular and PCS bands. The PA is internally matched to 50
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RMPA1956-103
CDMA2000-1X
RMPA1956-103
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UPA101
Abstract: UPA101-104 Transistor Array differential amplifier UPA101B UPA101G UPA102 UPA102G UPA103 UPA104 RF TRANSISTOR NPN MICRO-X
Text: California Eastern Laboratories AN-SI-1001 APPLICATION NOTE Ultrahigh Frequency Transistor Arrays: UPA101/102/103/104 INTRODUCTION SUMMARY In recent years there has been a rapidly increasing demand for high-frequency amplifiers and high-speed logic devices,
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AN-SI-1001
UPA101/102/103/104
UPA104
UPA104
UPA104B
UPA101
UPA101-104
Transistor Array differential amplifier
UPA101B
UPA101G
UPA102
UPA102G
UPA103
RF TRANSISTOR NPN MICRO-X
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Thermal considerations for SOT89
Abstract: BD136 BD226 BDX35
Text: Philips Semiconductors Thermal Impedance Curves General THERMAL IMPEDANCE CURVES Transistor thermal impedance curves for various packages and duty cycles are shown in Figures 1 to 23 inclusive. MGL193 103 handbook, full pagewidth Zth j-a δ=1 0.75 0.5 (K/W)
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MGL193
MGG837
OT416
SC-75)
MGL613
OT490
SC-89)
Thermal considerations for SOT89
BD136
BD226
BDX35
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CHDTC115GKGP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CHDTC115GKGP SURFACE MOUNT NPN Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 100 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE MARKING GKD Emitter .103 2.64 .086 (2.20)
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CHDTC115GKGP
300uS;
100MHz
CHDTC115GKGP
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GKD transistor
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CHDTC115GKPT SURFACE MOUNT NPN Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 100 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE MARKING GKD Emitter .103 2.64 .086 (2.20)
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CHDTC115GKPT
tp300uS;
100MHz
GKD transistor
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ICL7611
Abstract: MAX872
Text: POWER-SUPPLY CIRCUITS Application Note 103: Jul 09, 1998 P-FET Linear Regulator Has Low Dropout Voltage P-channel MOSFETs P-FETs , though more expensive than pnp transistors, are free of the dissipation loss associated with base drive in a pnp circuit. P-FETs also have a lower saturation
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100mV.
100kW)
500mA
ICL7611:
MAX872:
com/an103
ICL7611
MAX872
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CHDTA115GKGP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CHDTA115GKGP SURFACE MOUNT PNP Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 100 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE Base 2 2 .103 (2.64) .086 (2.20) .028 (0.70)
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CHDTA115GKGP
-72uA
-50uA
300uS;
100MHz
CHDTA115GKGP
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Untitled
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CHDTA114TKPT SURFACE MOUNT PNP Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 100 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE B 2 2 .103 (2.64) .086 (2.20) .028 (0.70)
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CHDTA114TKPT
tp300uS;
100MHz
100OC
-40OC
-100u
-100m
-500m
-200m
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Untitled
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CHDTC124GKPT SURFACE MOUNT NPN Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 100 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE Base 2 2 .103 (2.64) .086 (2.20) .028 (0.70)
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CHDTC124GKPT
330uA
tp300uS;
100MHz
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Untitled
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CHDTA115TKPT SURFACE MOUNT PNP Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 100 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE B 2 2 .103 (2.64) .086 (2.20) .028 (0.70)
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CHDTA115TKPT
-50uA
tp300uS;
100MHz
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Untitled
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CHDTB143TKPT SURFACE MOUNT PNP Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 500 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE B 2 2 .103 (2.64) .086 (2.20) .028 (0.70)
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CHDTB143TKPT
tp300uS;
100MHz
100OC
-40OC
-500u
-100m
-500m
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Untitled
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CHDTA114GKPT SURFACE MOUNT PNP Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 100 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE Base 2 2 .103 (2.64) .086 (2.20) .028 (0.70)
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CHDTA114GKPT
-720uA
-50uA
-10mA;
tp300uS;
100MHz
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fr91a
Abstract: philips bfq FQ235a t122 25 3 FQ262a fr90a 122e BFR134 t122 25 10 t122 25 72
Text: 22 Small Signal Leaded Devices Wideband Transistors cont. h FE R a tin g s Type P ackage v CEO V S O T -103 S O T -103 S O T -103 S O T -103 S O T -173 S O T -173 S O T -173 S O T -173 S O T -173 S O T -173 TO -72 S O T -173 S O T -122 S O T-37 TO -72 TO -72
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BFG96
BFP96
BFP505
BFP520
BFP540
BFQ33C
BFQ63
BFQ65
BFQ66
BFQ161
fr91a
philips bfq
FQ235a
t122 25 3
FQ262a
fr90a
122e
BFR134
t122 25 10
t122 25 72
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transistor 7016
Abstract: hf 9907
Text: What HEWLETT mLrJm P a c k a rd Avantek Products Thin-Film Cascadable Amplifier 10 to 100 MHz Technical Data UTO/UTC 103 Series Features Description Pin Configuration • Frequency Range: 10 to 100 MHz The 103 Series is a single-stage high-gain silicon bipolar amplifier
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Untitled
Abstract: No abstract text available
Text: Who IHEWLETT mUKM PACKARD Avantek Products Thin-Film Cascadable Amplifier 10 to 100 MHz Technical Data UTO/UTC 103 Series Features Description Pin Configuration • Frequency Range: 10 to 100 MHz The 103 Series is a single-stage high-gain silicon bipolar amplifier
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MJE 340 transistor
Abstract: SOT-103 74341 MSB037 BFR541 npn transistor high current
Text: Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR541 FEATURES DESCRIPTION • High power gain • High transition frequency Silicon NPN planar epitaxial transistor in a plastic, 4-lead dual emitter SOT 103 package. • Gold metallization ensures
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BFR541
OT103
MSB037
OT103.
711002b
MJE 340 transistor
SOT-103
74341
MSB037
BFR541
npn transistor high current
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Untitled
Abstract: No abstract text available
Text: Pjjijip^enijconductor^^^ • bbS3T31 0031233 T1S ■ APX^ProductspecificatiOT NPN 6 GHz wideband transistor ^ BFG91A N AHER PHILIPS/DISCRETE DESCRIPTION b*lE D PINNING NPN transistor in a 4-lead dual-emitter plastic SOT 103 envelope. PIN It is designed for application in
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bbS3T31
BFG91A
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