Untitled
Abstract: No abstract text available
Text: FDMC86106LZ N-Channel Power Trench MOSFET 100 V, 7.5 A, 103 mΩ Features General Description ̈ Max rDS on = 103 mΩ at VGS = 10 V, ID = 3.3 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process
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FDMC86106LZ
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fdmc86116
Abstract: FDMC86116LZ
Text: FDMC86116LZ N-Channel Power Trench MOSFET 100 V, 7.5 A, 103 mΩ Features General Description Max rDS on = 103 mΩ at VGS = 10 V, ID = 3.3 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process
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FDMC86116LZ
FDMC86116LZ
fdmc86116
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FDMC86106LZ
Abstract: FDMC86106Z
Text: FDMC86106LZ N-Channel Power Trench MOSFET 100 V, 7.5 A, 103 mΩ Features General Description Max rDS on = 103 mΩ at VGS = 10 V, ID = 3.3 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process
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FDMC86106LZ
FDMC86106LZ
FDMC86106Z
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Untitled
Abstract: No abstract text available
Text: FDMC86116LZ N-Channel Power Trench MOSFET 100 V, 7.5 A, 103 mΩ Features General Description ̈ Max rDS on = 103 mΩ at VGS = 10 V, ID = 3.3 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process
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FDMC86116LZ
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Q67040-S4009-A2
Abstract: SPP31N05
Text: BUZ 103 S Preliminary data SPP31N05 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • 175°C operating temperature Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 103 S 55 V 31 A 0.04 Ω
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SPP31N05
O-220
Q67040-S4009-A2
04/Nov/1997
Q67040-S4009-A2
SPP31N05
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Untitled
Abstract: No abstract text available
Text: FDMC86116LZ N-Channel Shielded Gate PowerTrench MOSFET 100 V, 7.5 A, 103 mΩ Features General Description Shielded Gate MOSFET Technology This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced PowerTrench® process
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FDMC86116LZ
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Untitled
Abstract: No abstract text available
Text: FDMC86106LZ N-Channel Shielded Gate PowerTrench MOSFET 100 V, 7.5 A, 103 mΩ Features General Description Shielded Gate MOSFET Technology This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced PowerTrench® process
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FDMC86106LZ
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Untitled
Abstract: No abstract text available
Text: FDMC86106LZ N-Channel Shielded Gate PowerTrench MOSFET 100 V, 7.5 A, 103 mΩ Features General Description Shielded Gate MOSFET Technology This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced PowerTrench® process
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FDMC86106LZ
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AM2302
Abstract: No abstract text available
Text: Analog Power AM2302N N-Channel 20-V D-S MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) 20 PRODUCT SUMMARY rDS(on) (mΩ) 76 @ VGS = 4.5V 103 @ VGS = 2.5V ID(A) 3.4 3.0 Typical Applications:
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AM2302N
AM2302
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information IXTF200N10T Trench Gate Power MOSFET VDSS ID25 = 100 V = 103 A Ω ≤ 6.0 mΩ RDS on (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ
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IXTF200N10T
200N10T
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information IXTF200N10T Trench Gate Power MOSFET VDSS ID25 = 100 V = 103 A ≤ 6.0 m Ω RDS on (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ
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IXTF200N10T
200N10T_
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Untitled
Abstract: No abstract text available
Text: Interna! with lid removed PARTNo. DIMENSIONS mm A B C D MB21/* 37.5 88.5 103 121 MB34/* 55.5 119 138 155 BIRMINGHAM ENGLAND * SPECIFY COLOUR OPTION BLY BLACK/YELLOW BLB BLACK/BLUE GRY GREY/YELLOW GRB GREY/BLUE MATERIAL NYLON 66 GF / TPE This d raw in g/docu m ent ia a COPYRIGHT and the FINISH
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MB21/*
MB34/*
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Untitled
Abstract: No abstract text available
Text: 16 15 M 14 13 12 11 I 10 S SYMBOL DEFINITION A DIMENSION WITHOUT AN INSPECTION REPORT SYMBOL DOES NOT REQUIRE INSPECTION. IT MAY BE CONTROLLED ON THE INDIVIDUAL COMPONENT DRAWING. CD MISSING SYMBOLS TOTAL NO OF INSPECTIONS REQUIRED 103 DWG STATUS DATE
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13AP06
25JL06
PE148520
M4629010
M4629003
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APY12
Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
Text: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP
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Edition-1978)
Ausgabe-1978)
BS3934
SO-26
OT-114
NS371
APY12
BYY32
ac176
AEY26
BAV77
bby20
BD545B
BAV27
transistor KT 209 M
AF367
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RS 5231
Abstract: ct7502
Text: WIRE RANGE ID MARK C 'S 'S I Z E HARK> CSTAMPED ON SOTTOMJ 'S ' EBrggA-A BsffBaB-B S EC T A -A S EC T B -B ± 0 .5 2 0 .7 *o~ £ 0 -3 L 5 ±0.3 |gf^~^ 2 .5 a. 9 S. 2 _A. ±0.4 2 .3 «—SH B 32 'X J B .1 to 7 .5 j.s 5QÉ. .v ► • 1* 2 . 5bv 103—5231 SECT B -B
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773630tf£
RS 5231
ct7502
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Untitled
Abstract: No abstract text available
Text: 9615 SW A llen, S u ite 103 B e a v e rto n , OR 97005 P h o n e : 503 6 4 3 —4899 8 0 0 -2 7 5 -4 8 9 9 Fax: (503) 3 7 2 -1 2 6 6 W ebsite: Trww.oui.com Z Z k C U l IN C Specifications 1 2 Part No. GF0576 Nominal Size 57 3 Impedance 4 Resonance 380 Hz.±
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GF0576
GF0576
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Untitled
Abstract: No abstract text available
Text: 9 6 1 5 SW A llen, S u i t e 103 B e a v e r to n , OR 97005 P hone: 5 0 3 6 4 3 —4 8 9 9 8 0 0 -2 7 5 -4 8 9 9 Fax: (5 0 3 ) 3 7 2 - 1 2 6 6 W ebsite: Trww.oui.com CUI INC Specifications 1 2 Part No. GF0668B Nominal Size 66 mm. 3 Impedance 4 Resonance
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GF0668B
F0668B
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A1266 GR
Abstract: A1266
Text: 9 6 1 5 SW A llen, S u i t e 103 B e a v e r to n , OR 97005 P hone: 5 0 3 6 4 3 —4 8 9 9 8 0 0 -2 7 5 -4 8 9 9 Fax: (5 0 3 ) 3 7 2 - 1 2 6 6 W ebsite: Trww.oui.com Z 2 & C U I INC Specifications 1 2 Part No. GF0571M Nominal Size 57 3 Impedance 4 Resonance
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GF0571M
GF0571M
A1266 GR
A1266
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Untitled
Abstract: No abstract text available
Text: 9 6 1 5 SW A llen, S u i t e 103 B e a v e r to n , OR 97005 P hone: 5 0 3 6 4 3 —4 8 9 9 8 0 0 -2 7 5 -4 8 9 9 Fax: (5 0 3 ) 3 7 2 - 1 2 6 6 W ebsite: Trww.oui.com CUI INC Specifications 1 2 Part No. GF0666 Nominal Size 66 mm. Resonance 320 Hz.± 64
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GF0666
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GF0922
Abstract: No abstract text available
Text: 9 6 1 5 SW A llen, S u i t e 103 B e a v e r to n , OR 97005 Phone: 5 0 3 6 4 3 —4 8 9 9 8 0 0 -2 7 5 -4 8 9 9 Fax: (5 0 3 ) 3 7 2 - 1 2 6 6 W ebsite: Trww.oui.com Z Z ^ C U I INC Specifications 1 2 Part No. GF0922 Nominal Size 92 3 Impedance 4 Resonance
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GF0922
GF0922
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GF0666M
Abstract: 6032t
Text: 9 6 1 5 SW A llen, S u i t e 103 B e a v e r to n , OR 97005 P hone: 5 0 3 6 4 3 —4 8 9 9 8 0 0 -2 7 5 -4 8 9 9 Fax: (5 0 3 ) 3 7 2 - 1 2 6 6 W ebsite: Trww.oui.com Z 2 & C U I INC Specifications 1 2 Part No. GF0666M Nominal Size 66 3 Impedance 4 Resonance
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GF0666M
GF0666M
6032t
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Untitled
Abstract: No abstract text available
Text: 9 6 1 5 SW A llen, S u i t e 103 B e a v e r to n , OR 97005 Phone: 5 0 3 6 4 3 —4 8 9 9 8 0 0 -2 7 5 -4 8 9 9 Fax: (5 0 3 ) 3 7 2 - 1 2 6 6 W ebsite: Trww.oui.com G U I INC Specifications 1 2 Part No. GF0571H Nominal Size 57 3 Impedance 4 Resonance 400
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GF0571H
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SC11024
Abstract: 11024C 2764 z SCI1006
Text: V SIERRA SEMICONDUCTOR SC11024 2400 Bit Per Second Modem Analog Peripheral □ Conforms to CCITT V.22 bis, V.22, V.21, and Bell 212A and 103 standards □ Single 5 V supply with 10 mW power dow n mode □ A nalog, digital, and rem ote digital loopback □ Integrated DTM F/G uard Tone
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SC11024
28-PIN
11024C
plete2400
SC11024
MA8-MA10,
MA12-MA13
2764 z
SCI1006
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372a
Abstract: GF1004M
Text: 9 6 1 5 SW A llen, S u i t e 103 B e a v e r to n , OR 97005 Phone: 5 0 3 6 4 3 —4 8 9 9 8 0 0 -2 7 5 -4 8 9 9 Fax: (5 0 3 ) 3 7 2 - 1 2 6 6 W ebsite: Trww.oui.com Z Z ^ C U I INC Specifications 1 2 Part No. GF1004M Nominal Size 102 3 Impedance 4 Resonance
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GF1004M
372a
GF1004M
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