to92 fet p channel

Abstract: ZVP2110A ZVP2110C P-Channel Enhancement Mode Vertical DMOS FET
Contextual Info: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP2110C P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP2110A ISSUE 2 – MARCH 94 FEATURES * 100 Volt VDS * RDS on =8Ω ISSUE 2 – MARCH 94 FEATURES * 100 Volt VDS * RDS(on)=8Ω G REFER TO ZVP2110A FOR GRAPHS

Contextual Info: P-CHANNEL ENHANCEMENT MODE VERTICAL D M O S FET ISSUE 2 -M ARCH 94 FEATURES * 100 Volt VDS * RDS.on =8fl / Ds REFER TO ZVP2110A FOR GRAPHS E-Line T092 Compatible ABSOLUTE M A X IM U M RATINGS. PARAMETER SY M B O L Drain-Source Voltage V DS -100 V b -230 mA

Contextual Info: P-CHANNEL ENHANCEM ENT M ODE VERTICAL DM OS FET ZVP2110A ISSUE 2 – M ARCH 94 FEATURES * 100 Volt VDS * RDS on =8Ω D G S E-Line TO92 Compatible ABSOLUTE M AXIM UM RATINGS. PA RA M ETER SYM BOL VALUE UNIT Dr ai n-Sou rce Vo l t ag e V DS -100 V Contin uo us Drain Cur r en t at T am b=25°C

ZVP2110

Abstract: ZVP2110A ZVP2110B ZVP2110C ZVP2110E ta f220 ZVP211 F219
Contextual Info: bOE J> • cic 7D57fl 0007^51 5b0 M ZETB ZETEX SEMICONDUCTORS P-channel enhancement mode vertical DMOS FET ZVP2110 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance

Contextual Info: ZVP2110AM1 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V) I(D) Max. (A)230m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)700m Minimum Operating Temp (øC)

Contextual Info: ZVP2110B Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)100Í I(D) Max. (A)600m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)5.0 Minimum Operating Temp (øC)

ZVP2110A

Abstract: P-Channel FET 100v to92 to92 fet p channel DSA003787
Contextual Info: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP2110C P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP2110A ISSUE 2 – MARCH 94 FEATURES * 100 Volt VDS * RDS on =8Ω ISSUE 2 – MARCH 94 FEATURES * 100 Volt VDS * RDS(on)=8Ω G REFER TO ZVP2110A FOR GRAPHS

ZVP2110

Abstract: ZVN2110G ZVN211 ZVP2110G sot223 p-channel DSA0037405
Contextual Info: SOT223 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP2110G TYPICAL CHARACTERISTICS VGS= -20V -16V -1.6 - Drain Current Amps g -Transconductance (mS) 250 200 VDS=-10V 150 100 50 BI -1.4 -12V -10V -9V -8V -1.2 -1.0 -0.8 -6V -0.4 -5V -4.5V -4V -3.5V I -2

Contextual Info: SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 - OCTOBER 1995 O FEATURES * 6A PULSE DRAIN CURRENT * FAST SW ITCHING SPEED PARTMARKING DETAIL - Z V N 2 1 10 CO M PLEM ENTARY TYPE - ZVP2110G ABSOLUTE MAXIMUM RATINGS. PARAM ETER VALUE SYM BO L D ra in -S o u r c e V o lta g e

Contextual Info: SOT223 N-CHANNEL ENH AN CEM ENT ZVN2110G M O D E VERTICAL D M O S FET ISSU E 3 - OCTOBER 1995 O_ FEATURES * 6A PULSE DRAIN CURRENT * FAST SWITCHING SPEED PARTMARKING DETAIL COMPLEMENTARY TYPE - ZVN2110 ZVP2110G % D ABSOLUTE MAXIMUM RATINGS.

Contextual Info: SOT223 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET GS 250 -1.6 ISSUE 2 – MARCH 94 FEATURES * 100 Volt VDS * RDS on =8Ω ZVP2110G ✪ D -1.4 200 COMPLEMENTARY TYPE – ZVN2110G -1.2 150 S -1.0 DS= PARTMARKING DETAIL – ZVP2110 -0.8 100 D G -0.6 ABSOLUTE MAXIMUM RATINGS.

zvp2110

Contextual Info: SOT223 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 - MARCH 94 Q FEATURES * 100 Volt V DS ROS onr8i2 COM PLEM ENTARY T Y P E -Z V N 2 1 1 0 G PARTMARKING DETAIL - ZVP2110 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYM BO L D ra in -S o u rc e V o lta g e

ZVP2110A

Contextual Info: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 -MARCH 94_ FEATURES * 100 V o lt V,DS ^DS on = n REFER TO ZVP2110A FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage Continuous Drain Current a tT am^ 2 5 0C

Contextual Info: ZVP2110A Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)40 I(D) Max. (A)230m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)700m Minimum Operating Temp (øC)

Contextual Info: SOT223 N-CHANNEL ENHANCEM ENT M ODE VERTICAL DM OS FET ZVN2110G ISSUE 3 – OCTOBER 1995 ✪ FEATURES * 6A PULSE DRAIN CURRENT * FAST SWITCHING SPEED D S PARTMARKING DETAIL COMPLEMENTARY TYPE - D ZVN2110 ZVP2110G G ABSOLUTE M AXIM UM RATINGS. PA RA M ETER

Contextual Info: ZVP2110L Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)300m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)200 Minimum Operating Temp (øC)

FXT2222A

Abstract: FXT2907A FXT3904 FXT3906 ZVN2110C ZVN2120C ZVN4206C ZVNL120C ZVP2110C ZVP2120C
Contextual Info: CENTRE COLLECTOR E-LINE TABLE 6: SW ITCH IN G T R A N SIST O R S Type V ceo Max • V CE sat at Max. •c Min at h FE at Iß •c h Max. switching times !c to n ^o ff ns mA V mA V mA mA Min. Max. mA MHz mA ns F XT2222A 40 800 1.0 500 50 100 300 150 300 20

electrical engineering projects

Abstract: RELAY JZC UA78L05ACLPR resistor 10k ohm JZC-11F-5VDC-1Z SC1602Z
Contextual Info: Page 1 of 2 Digilentinc.com Blog Learn Search chipKIT Starter Kit Part # 240-064-KIT Hide Details The chipKIT Starter Kit provides a wide range of sensors, actuators, and electronic components at a remarkably low cost, enabling the construction of an endless array of projects that can serve to inform beginners or empower experts. The kit has

Contextual Info: bGE D • ZETEX SEMICONDUCTORS 4 tlt:J7DS?ô ÜQD?bûS b 3 fi ■ ZETB CENTRE BASE E-LINE 'M V 'P' Channel Small Signal MOSFETs Part Number BV dss Id 'dm V mA A V Min. VcSlth Max. a •o mA ÎÎ a Max. R d S I o ii ) Id mA Pd VP w ZVP0545AM 1 -450 -45 - 0 .4

Contextual Info: D SbE • ^70576 0D07052 7Tb H Z E T B SEMICONDUCTOR DICE MOSFETs - N-CHANNEL B V 0SS Dice type ZVN0540 Min. ZETEX f'DSIonI Max. at lD V qs SEMICONDUCTORS Max. IDSS at Max. IGSS at 'd m Rated VDS V GS=20V Min. atV0S ^GS th Chip Min. Max. at lD geometry at

TCA780

Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Contextual Info: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

mosfet cross reference

Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
Contextual Info: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178