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    ZVP2110L Search Results

    ZVP2110L Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ZVP2110L Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF
    ZVP2110L Unknown FET Data Book Scan PDF
    ZVP2110L Unknown Semiconductor Master Cross Reference Guide Scan PDF
    ZVP2110L Zetex Semiconductors P-Channel Enhancement Mode Vertical DMOS FET Scan PDF

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    Untitled

    Abstract: No abstract text available
    Text: ZVP2110L Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)300m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)200 Minimum Operating Temp (øC)


    Original     		PDF ZVP2110L

    mosfet cross reference

    Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
    Text: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is


    Original     		PDF T0-92 options4206A ZVN4206C ZVN4206E ZVN4306A TN2106K1 VN2210N3 TN0606N3 TN0606N6 mosfet cross reference pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode

    L50Q

    Abstract: ZVN1320B ZVN2210L zvn311 ZVP2210M ZVP3210M
    Text: P19 Ò ZVN0530B 0.15A, 800 ZVN0535B 0.15A, 800 ZVN0540B 0.15A, BOO ZVN0545B 0.15A. 800 ZVN053SA 0.07A, 800 ZVN0540A 0.07A, 800 “S ZVN0530A 0.07A, 802 ZVN2335L 4.5A, 1.50 ZVN0530L 0.15A, 800 ZVN2330L 4.5A, 1.50 jS. as ZVN2345L 4.5A, 1.50 ZVN2340M 4.5A. 1.50


    OCR Scan     		PDF OT-23, ZVP3210M" ZVP2210M zvn3210m zvn3210l L50Q ZVN1320B ZVN2210L zvn311 ZVP3210M

    ZVP2110L

    Abstract: ZVP2110 g291
    Text: T5 PLESSEY SEMICOND/DISCRETE 7220533 PLESSEY T • C o m p a c t ge om etry • F a s t s w itc h in g sp e e d s • N o s e c o n d a ry b re a k d o w n • E x ce lle n t te m p e ratu re sta b ility • H igh in p u t im p e d a n ce • L o w cu rren t drive


    OCR Scan     		PDF ZVP2110 G-290 722DS33 G-291 G-292 G-293 ZVP2110L ZVP2110 g291

    IRF 544 N MOSFET

    Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
    Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no


    OCR Scan     		PDF

    Ferranti Semiconductors

    Abstract: R5D SOT-23 ZVP2110 ZVP2110L FERRANTI ZVP2110A ZVP2110B G-293 P-Channel FET 100v to92
    Text: ZETEX S E M I C O N D U C T O R S *=17□S 7 Û 0 0 0 5 7 0 3 S • ZETB 95D 0 57 8 5 P-channel enhancement mode vertical DMOS FET FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance


    OCR Scan     		PDF 30S7flS ZVP2110 ZVP2110A* -100V ZVP2110B* O-220 Ferranti Semiconductors R5D SOT-23 ZVP2110 ZVP2110L FERRANTI ZVP2110A ZVP2110B G-293 P-Channel FET 100v to92