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    ZVP2110

    Abstract: ZVP2110A ZVP2110B ZVP2110C ZVP2110E ta f220 ZVP211 F219
    Text: bOE J> • cic 7D57fl 0007^51 5b0 M ZETB ZETEX SEMICONDUCTORS P-channel enhancement mode vertical DMOS FET ZVP2110 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance


    OCR Scan     		ZVP2110 ZVP2110A* -100V ZVP2110B* ZVP2110C F-225 CH70576 ZVP2110 ZVP2110A ZVP2110B ZVP2110E ta f220 ZVP211 F219 PDF

    Untitled

    Abstract: No abstract text available
    Text: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 -MARCH 94 FE A T U R E S * 50 Volt V,DS * R,D Stonr= 10il L o w threshold ABSOLUTE MAXIMUM RATINGS. SYMBOL PARAMETER Drain-Source Voltage Continuous Drain Current at T amtj=25°C VALUE UNIT V DS -50 V •


    OCR Scan     		cH7Q57Ã 001G35S PDF

    Untitled

    Abstract: No abstract text available
    Text: P-CHANNEL ENHANCEMENT MODE VERTICAL D M O S FET ISSUE 2 - MARCH 94_ FEATURES * 200 Volt VDS * R DS on = 2 5 £ î ABSOLUTE MAXIMUM RATINGS. PARAMETER SY M B O L Continuous Drain Current at Tamlj=25°C VALUE UNIT < o (/> Drain-Source Voltage


    OCR Scan     		001G35S PDF