Untitled
Abstract: No abstract text available
Text: NTE524V42 Diodes Metal-Oxide Varistor MOV V(DC) Nom.(V) Varistor Voltage680 V(RMS) Max. Applied Voltage420 V(DC) Max. Applied Voltage560 I(TM) Max.(A) Peak Current6.5k V(C) Nom. (V) Clamping Voltage1110 @I(PP) (A) (Test Condition)1.0m W(TM) Max.(J) Transient Energy160
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NTE524V42
Voltage680
Voltage420
Voltage560
Voltage1110
Energy160
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Untitled
Abstract: No abstract text available
Text: 1SMC100 Diodes Unidirectional Transient Suppressor Military/High-RelN Minimum Operating Temp øC Maximum Operating Temp (øC) V(BR) Nom.(V)Rev.Break.Voltage100 @I(R) (A) (Test Condition)1.0m V(RWM) (V) Work.Pk.Rev.Voltage100 I(PPM) Max.(A)Pk.Pulse Current8.4
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1SMC100
Voltage100
Voltage111
StyleDO-214AA
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Untitled
Abstract: No abstract text available
Text: .M i P ln r k W n r k c ^ 3.3V SINGLE SUPPLY 1:9 PECL-TO-TTL SYNERGY PRELIMINARY SY10H641L SY100H641L SEM ICONDUCTOR FEATURES DESCRIPTION • 3 .3 V p o w e r s u p p ly ■ P E C L -to -T T L v e rs io n o f p o p u la r E C L in P S E111 ■ G u a ra n te e d lo w s k e w s p e c ific a tio n
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SY10H641L
SY100H641L
SY10H641
SY10H641LJCTR
SY100H641LJC
Y100H641LJCTR
J28-1
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TT 2246
Abstract: No abstract text available
Text: >4MCC PRELIMINARY SPECIFICATION S O N E T/S D H /A TM O C-48 8:1 TR AN SM ITTER FEATURES GENERAL DESCRIPTION • Micro-power Bipolar technology • Complies with ANSI, Bellcore, and ITU-T specifications • On-chip high-frequency PLL for clock generation • Supports 2.4 GHz OC-48
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S3041
OC-48)
S3041
OC-48
S3041.
OC-48
/DW0045-28
TT 2246
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY CY7C1020 3 2 K x 16 Static RAM Features BLE is LOW, then data from I/O pins <l/0-| through l/0 8), is written into the location specified on the address pins (A0 through A14). If byte high enable (BHE) is LOW, then data from I/O pins (l/09 through l/0 16) is written into the location speci
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CY7C1020
44-pin
400-mil
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Untitled
Abstract: No abstract text available
Text: CY7C197 256Kx 1 Static RAM Features vided by an active LOW chip enable CE and three-state driv ers. The CY7C197 has an automatic power-down feature, reducing the power consumption by 75% when deselected. • High speed — 12 ns Writing to the device is accomplished when the chip enable
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CY7C197
256Kx
CY7C197
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ku 602 vc
Abstract: No abstract text available
Text: B U R R —B R O U J N B U CORP R R H E - B R O W D |l7 3 1 3 b S 0D14ûfc.5 ô I OPA121 N 1 Low Cost Precision OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • LOW NOISE: 6 n V /V H z typ at 10kHz • OPTOELECTRONICS • LOW BIAS CURRENT: 5pA max • DATA ACQUISITION
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OPA121
10kHz
0PEN-L00P
OPA121
AD547
ku 602 vc
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15 pin to usb
Abstract: No abstract text available
Text: Pentium /!I, 6x86, K6 Clock Synthesizer/Driver for Desktop/ Mobile PCs with Intel 82430TX and 2 DIMMs or 3 SO-DIMMs Features • Mixed 2.5V and 3.3V operation • Complete clock solution to meet requirem ents of Pen tium®, Pentium® II, 6x86, or K6 motherboards
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82430TX
15 pin to usb
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PR3000A
Abstract: MIPS R3000A
Text: PIPER” ÂPW ÂM CE Ö 1N IF @ 1M /Ä T B Ü [M ! FEATURES: • Highly Integrated single-chip RISC processor that contains the following: - CPU PR3000A based - FPA (PR3010A based) - Write/Read Buffer - Instruction and Data Caches - 32-bit Counters/Timers
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PR3000A
PR3010A
32-bit
64entry
64-blt
160-pin
MIPS R3000A
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SD5501
Abstract: TELEDYNE SD5501J
Text: TELEDYNE COMPONENTS 5ÖE D • û ilT b O a GODtiMS4 T SD5501 SEMICONDUCTOR N-CHANNEL DEPLETION-MODE 4-CHANNEL D-MOS FET ARRAY ORDERING INFORMATION Sorted Chips in Waffle Pack 16-Pin Ceramic Dual In-tine Package 16-Pin Plastic Dual In-Line Package SD5501CHP'
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SD5501
SD5501CHP-
16-Pin
SD5501J
16-Plrt
SD55Q1N
30Vdc
Voltage111
Match111,
TZ5911
SD5501
TELEDYNE
SD5501J
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relay Re 04501
Abstract: JFET TRANSISTOR REPLACEMENT GUIDE j201 re 04501 relay wabash relay 1SK6-0001 wabash reed relay JFET TRANSISTOR REPLACEMENT GUIDE e201 npdsu406 34901a ysi 44031
Text: ••• • V . / • * •. Agilent Technologie: Innovating the HP Way ' — ENGI86 Service Guid< Agilent 34970A D ata Acquisition / Switch U nit C opyright 1999 H ew lett-Packard Company All Rights Reserved. P rinting History E dition 1, Ju n e 1997
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ENGI86
4970A
E1199
relay Re 04501
JFET TRANSISTOR REPLACEMENT GUIDE j201
re 04501 relay
wabash relay
1SK6-0001
wabash reed relay
JFET TRANSISTOR REPLACEMENT GUIDE e201
npdsu406
34901a
ysi 44031
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ASZ18
Abstract: No abstract text available
Text: H M 5 3 8 1 2 1 J P / Z P - 1 0 / 1 2 / 1 5 — Preliminary 131,072 x 8-Blt Multiport CMOS Video Random Access Memory • DESCRIPTION The HM538121 is a 1-Mbit multiport video RAM equipped with a 128-kword x 8-bit dynamic RAM and a 256-word x 8-bit SAM serial
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HM538121
128-kword
256-word
ASZ18
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BSN20 MARKING
Abstract: BSN20
Text: G en era l \J S e m i c o n d u c t o r _ BSN20 N-Channel Enhancement-Mode MOSFET % Vds 5 0 V RdS ON 6 f i Id 1 8 0 m A TO-236AB (SOT-23) •122(3.1) .110(2.8) 0.031 (0.8) .016 (0.4) T o p V ie w R+ 1— co m 0 035 (0.9) CO in m o o Pin Configuration
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BSN20
O-236AB
OT-23)
OT-23
OT-23,
S0T-23-6L
BSN20 MARKING
BSN20
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CY7B161-12PC
Abstract: b1615 B1616
Text: PRELIMINARY r ’V P P F Q O 16,384x4 Static RAM Separate I/O SEMICONDUCTOR Features Functional Description • High speed - 10 ns t* The CY7B161 and CY7B162 are high-performance BiCMOS static RAMs orga nized as 16,384 by 4 bits with separate I/O. These RAMs are developed by Aspen
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CY7B161
CY7B162
7B161)
384x4
8-A-00014-A
CY7B161-12PC
b1615
B1616
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spusb1
Abstract: No abstract text available
Text: - I l l ¿ t'— ; /I _ Protection Circuits Upstream USB Port Terminator with 4M SPUSB1 Series The SPUSB1AJT, SPUSB1CJT and SPUSB1BJT are single-channel USB upstream -port term ination networks. The SPUSB1 Series integrates EMI/RFI filter components R1 and C1,
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SC70-6
SC70-6
spusb1
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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7B164-15
Abstract: 910U
Text: _ PRELIM INARY SEMICONDUCTOR 16,384 x 4 Static R/W RAM Features Functional Description • BiCMOS for optimum speed/power • High speed - 10 ns t* T he CY7B164 and CY7B166 are high-performance BiCMOS static RAMs organized as 16,384 x 4 bits. These RAMs are devel
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CY7B164
CY7B166
7B166)
7B166
8-A-00015-A
7B164-15
910U
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Untitled
Abstract: No abstract text available
Text: E M M OPA121 ' Ií Tm^ J I í B U R R - BROW N« I Low Cost Precision ÆJffet OPERATIONAL AMPLIFIER APPLICATIONS FEATURES • LO W NOISE: 6 n V / V H z typ at 10kHz • O P TO ELEC TR O N IC S • LOW BIAS C U RR EN T: 5pA max • DATA ACQUISITION • LO W O F F S ET : 2mV max
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OPA121
10kHz
OPA12I
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CY7C186-45PC
Abstract: CY7C186-55PC 7C186-20PC
Text: CY7C185 CY7C186 CYPRESS SEMICONDUCTOR Features Automatic power-down when deselected CMOS for optimum speed/power High speed - 20 ns Low active power - 550 mW Low Standby Power - 110 mW TTL-compatible inputs and outputs Capable of withstanding greater than
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CY7C185
CY7C186
185-20L
185-25PC
85-25V
185-25DC
185-25LC
185-35PC
85-35V
185-35D
CY7C186-45PC
CY7C186-55PC
7C186-20PC
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J FET RF Cascode Input
Abstract: T431 Teledyne Semiconductor teledyne fet u
Text: TELEDYNE C O M P O N EN T S döE » MI Ö TlTbO H 000 3430 T - US'- b « -S '* SD2100 SEMICONDUCTOR_ N-CHANNEL DEPLETION-MODE D-MOS FET ORDERING INFORMATION TO-2Q6AF (TO-72 Hermetic Package SD2100DË with Shorting Ring on lead«
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SD2100
SD2100DË
SD2100DE/Ft
SO-16)
OT-143)
J FET RF Cascode Input
T431
Teledyne Semiconductor
teledyne fet u
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diagram of ic 7941
Abstract: Teledyne Semiconductor
Text: eäE TELEDYNE COMPONENTS Ir M Jæ Æ D ÜTL7bü2 QOUb4b7 ? m • Æ TZ5 9 1 1 SEMICONDUCTOR N-CHANNEL DEPLETION-MODE DUAL D-MOS FET ORDERING INFORMATION TQ-78 Hermetic Package TZ5911HD SO-8 Surface Mount Package T259110V FEATURES APPLICATIONS ■ ■ ■ ■
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TQ-78
TZ5911HD
T259110V
OT-143)
diagram of ic 7941
Teledyne Semiconductor
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Untitled
Abstract: No abstract text available
Text: fax id: 3553 7 ^ CYPRESS P R E L IM IN A R Y C Y 2 3 1 0 A N Z 3.3V SDRAM Buffer for Mobile PCs with 4 SO-DIMMs Features Functional Description One input to 10 output buffer/driver Supports up to four SDRAM SO-DIM Ms Two additional outputs for feedback l2C interface for output control
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CY2310ANZ
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Untitled
Abstract: No abstract text available
Text: * S O N E T /S D H /A T M O C - 1 2 C L O C K SYNERGY RECOVERING TRAN SC EIVER '.M iC O N D U C T O R FE A T U R E S • ■ A complete SONET/SDH Transmitter & Receiver ■ Complies with Bellcore, ITU/CCITT and ANSI specifications ■ Two on-chip PLLs: One for clock generation &
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OC-12)
44MHz,
84MHz
76MHz
PM5355
S/UNI-622
CKE622
OC-12
SY69712
SY69712
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HYUNDAI i10
Abstract: No abstract text available
Text: CY62256V25 PRELIMINARY 32K X 8 2.5V Static RAM Features active LOW output enable OE and three-state drivers. The device has an automatic power-down feature, reducing the power consumption by more than 98% when deselected. • Single 2.5V power supply • Ideal for low-voltage and low-power cache memory
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CY62256V25
HYUNDAI i10
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