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    V16160 Price and Stock

    ROHM Semiconductor MSM56V16160K8T3K

    IC DRAM 16MBIT PAR 50TSOP II
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    DigiKey MSM56V16160K8T3K Tray
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    TURCK Inc CSNFV 16-16-0.2 (ALTERNATE: U-48864)

    CSNFV 16-16-0.2, U-48864 | Turck CSNFV 16-16-0.2
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    RS CSNFV 16-16-0.2 (ALTERNATE: U-48864) Bulk 6 Weeks 1
    • 1 $95.6
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    TURCK Inc CKNFV 16-16-0.5 (ALTERNATE: U-40603)

    CKNFV 16-16-0.5, U-40603 | Turck CKNFV 16-16-0.5
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    RS CKNFV 16-16-0.5 (ALTERNATE: U-40603) Bulk 6 Weeks 1
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    TURCK Inc CSNFLV 16-16-0.3 (ALTERNATE: U-79326)

    CSNFLV 16-16-0.3, U-79326 | Turck CSNFLV 16-16-0.3
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    RS CSNFLV 16-16-0.3 (ALTERNATE: U-79326) Bulk 6 Weeks 1
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    TURCK Inc CSNFLV 16-16-0.5 (ALTERNATE: U2-10099)

    CSNFLV 16-16-0.5, U2-10099 | Turck CSNFLV 16-16-0.5
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    RS CSNFLV 16-16-0.5 (ALTERNATE: U2-10099) Bulk 6 Weeks 1
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    V16160 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TSOP50

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM51 V16160 _ 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51VI6160 is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The V16160 achieves high integration, high-speed operation, and low-power


    OCR Scan     		PDF MSM51V16160 576-Word 16-Bit MSM51VI6160 MSM51V16160 42-pin 50/44-pin TSOP50

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM51 V16160 B/B8 L E 2 G 0 0 8 1 -17-41 1,048,576-Word x 16-Bit D YN A M IC RA M : FAST PAG E M O D E TYPE DESCRIPTION The MSM51V I6160B / BSL is a 1,048,576-word x 16-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. TheMSM51 V I6160B/BSL achieves high integration, high-speed operation, and


    OCR Scan     		PDF MSM51 V16160 576-Word 16-Bit MSM51V I6160B TheMSM51 I6160B/BSL

    09A10

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM56 V16160 2-Bank x 524,288-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The V16160 is a 2-bank x 524,288-word x 16-bit synchronous dynamic RAM, fabricated in OKI's CMOS silicon gate process technology. The device operates at 3.3 V. The inputs and


    OCR Scan     		PDF MSM56 V16160 288-Word 16-Bit MSM56V16160 cycles/64 09A10

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM56 V16160 2-Bank x 524,288-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The V16160 is a 2-bank x 524,288-word x 16-bit synchronous Dynamic RAM, fabricated in OKI's CMOS silicon gate process technology. The device operates at 3.3 V, and the inputs and outputs are LVTTL Compatible.


    OCR Scan     		PDF MSM56 V16160 288-Word 16-Bit MSM56V16160 cles/64

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM56 V16160 2-Bank x 524,288-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The V16160 is a 2-bank x 524,288-word x 16-bit synchronous dynamic RAM, fabricated in OKI's CMOS silicon gate process technology. The device operates at 3.3 V. The inputs and


    OCR Scan     		PDF MSM56 V16160 288-Word 16-Bit MSM56V16160 cycles/64

    51V1616

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM51 V16160 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51VI6160 is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The V16160 achieves high integration, high-speed operation, and low-power


    OCR Scan     		PDF MSM51 V16160 576-Word 16-Bit MSM51VI6160 MSM51V16160 42-pin 51V1616

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-10168-4E MEMORY ill lilllllllllllllllllllllllllllllllll 1M X 1 6 BITS CMOS 1,048,576 x 16 BITS Fast Page Mode Dynamic RAM DESCRIPTION The Fujitsu V16160A is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory


    OCR Scan     		PDF DS05-10168-4E MB81V16160A 16-bit 256-bits F9704

    HY51V16160C

    Abstract: No abstract text available
    Text: “H Y U N D A I HY51V18160C, V16160C 1M X 16bit CMOS DRAM PRELIMINARY DESCRIPTION ORDERING INFORMATION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high


    OCR Scan     		PDF HY51V18160C, HY51V16160C HY51V18160CJC HY51V18160CSLJC HY51V18160CTC HY51V18160CSLTC HY51V16160CJC HY51V16160CSLJC HY51V16160CTC HY51V16160CSLTC HY51V16160C

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LS Is M 5 M 4 V 1 6 1 6 0 C T P - 5 , - 6 , - 7 , -5S,-6S,-7S FAST PAGE MODE 16777216-BIT 1048576-WORD BY 16-BIT DYNAMIC RAM DESCRIPTION This is a family of 1048576-word by 16-bit dynamic RAMS, fabricated with the high performance CMOS process, and is ideal


    OCR Scan     		PDF 16777216-BIT 1048576-WORD 16-BIT) 16-bit M5M4V16160CTP-5

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LSIs M 5 M 4 V 1 6 1 6 0 B J ,T P ,R T - 6 ,- 7 ,- 8 ,- 6 S ,- 7 S ,- 8 S _ FAST PAGE MODE 16777216-BIT 1048576-WQRP BY 16-BIT DYNAMIC RAM DESCRIPTION This is a family of 1048576-word by 16-bit dynamic RAMS, fabricated with the high performance CMOS process,and is ideal for


    OCR Scan     		PDF 16777216-BIT 1048576-WQRP 16-BIT 1048576-word 16-bit M5M4V16160BJ 1fl25

    MSM51V16160DSL

    Abstract: No abstract text available
    Text: E2G0130-17-61 O K I Semiconductor MSM5 1V I6 1 6 0 P/PSL 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE D ESC R IPTIO N The M SM V16160D/DSL is a 1,048,576-word x 16-bit dynamic RAM fabricated in Oki's silicon­ gate CMOS technology. The V16160D / DSL achieves high integration, high-speed operation,


    OCR Scan     		PDF E2G0130-17-61 MSM51VI6160P/PSL 576-Word 16-Bit MSM51V16160D/DSL heMSM51V16160D/DSLachieveshighintegration 42-pin MSM51V16160DSL

    a11u

    Abstract: taser circuit 42-PIN DD1752
    Text: O K I Semiconductor V16160_ 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The V16160 is a new generation Dynamic RAM organized as 1,048,576-word x 16-bit configuration. The technology used to fabricate the V16160 is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF MSM51V16160_ 576-Word 16-Bit MSM51V16160 cycles/64ms a11u taser circuit 42-PIN DD1752

    Untitled

    Abstract: No abstract text available
    Text: MEMORY 1M X 16 BIT FAST PAGE MOBEDYNAMICRA V16160B-50/-60/-50L/-60L CMOS 1,048,576 x 16 Bit Fast Page Mode Dynamic RAM DESCRIPTION The Fujitsu V16160B is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory cells accessible in 16-bit increments. The V16160B features a ‘last page” mode of operation whereby


    OCR Scan     		PDF MB81V16160B-50/-60/-50L/-60L MB81V16160B 16-bit F9712

    Untitled

    Abstract: No abstract text available
    Text: - H Y U N D A I * HY51V18160B,HY51 V I6160B 1Mx16, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this


    OCR Scan     		PDF HY51V18160B I6160B 1Mx16, 16-bit DQO-OQ15)

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor V16160_ 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The V16160 is a new generation Dynamic RAM organized as 1,048,576-word x 16-bit configuration. The technology used to fabricate the V16160 is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF MSM51V16160_ 576-Word 16-Bit MSM51V16160 16-bit cycles/64ms

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU S E MI CONDUCT OR D ATA S H E E T D S 0 5 -1 0168-2E MEMORY CMOS 1M x 16 BIT FAST PAGE MODE DYNAMI C RAM M B 8 1 V 1 6 1 6 0 A -60/-70 CMOS 1,048,576 x 16BIT Fast Page Mode Dynamic RAM • DESCRIPTION T h e F u jit s u M B81 V1 61 60 A is a fu lly d e c o d e d C M O S D y n a m i c R A M D R A M t h a t c o n ta i n s 1 6 ,7 7 7 , 2 1


    OCR Scan     		PDF 0168-2E 16BIT

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI HY51V18160B,HY51 V 16160B 1Mx16, Fast Page mode DESCRIPTION This fam ily is a 16M bit dynam ic RAM organized 1,048,576 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this


    OCR Scan     		PDF HY51V18160B 16160B 1Mx16, 16-bit 1Mx16

    RT-6

    Abstract: M5M4V16160 1,048,576 16 bit
    Text: M 5 M 4 V 1 6 1 6 0 B J J P ,R T - 6 r 7 r 8 r 6 S , 7 S , « S FAST PAGE MODE 16777216-BIT 1048576-WQRD BY 16-BIT } DYNAMIC RAM DESCRIPTION This is a family of 1048576-w ord by 16-bit dynamic RAMS, fabricated with the high performance C M OS process,and is ideal for


    OCR Scan     		PDF 16777216-BIT 1048576-WQRD 16-BIT 1048576-w 16-bit M5M4V16160BJ 1Q48576-WORD RT-6 M5M4V16160 1,048,576 16 bit

    Untitled

    Abstract: No abstract text available
    Text: MEMORY CMOS 1M x 16 BITS FAST PAGE MODE DYNAMIC RAM V16160 A-60/60L/-70/70L CMOS 1,048,576 x 16 BITS Fast Page Mode Dynamic RAM • DESCRIPTION The Fujitsu V16160A is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory cells accessible in 16-bit increments. The V16160A features a “fast page” mode of operation whereby


    OCR Scan     		PDF MB81V16160 -60/60L/-70/70L MB81V16160A 16-bit 256-bits MB81V16160A F50006S-2C-1 MB81V16160A-60/60L/-70/70L

    Untitled

    Abstract: No abstract text available
    Text: •'HYUNDAI HY51V18160B, V16160B _ 1M x 16bit CMOS DRAM DESCRIPTION ORDERING INFORMATION This fa m ily is a 16M bit dynam ic RAM organized 1,048,576 x 16-bit configuration with Fast Page mode CM O S DRAMs. Fast Page m ode offers high speed random access o f m em ory cells within the


    OCR Scan     		PDF HY51V18160B, HY51V16160B 16bit HY51V18160BJC HY51V18160BSLJC HY51V18160BTC HY51V18160BSLTC Y51V16160BJC HY51V16160BSLJC HY51V16160BTC

    Untitled

    Abstract: No abstract text available
    Text: V16160A/ NN51V18160A series Fast Page Mode CMOS 1M x 16bit Dynamic RAM M x w D N /a x Preliminary Specification d e s c rip tio n The V16160A/18160A series is a high performance CMOS Dynamic Random Access Memory orga­ nized as 1,048,576 words by 16 bits. The V16160A/18160A series is fabricated with advanced CMOS


    OCR Scan     		PDF NN51V16160A/ NN51V18160A 16bit NN51V16160A/18160A 128ms NN51V18 60AXX