UN1111
Abstract: UNR1111 XN01111 XN1111
Text: Composite Transistors XN01111 XN1111 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UNR1111(UN1111) x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element
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XN01111
XN1111)
UNR1111
UN1111)
UN1111
XN01111
XN1111
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UN1114
Abstract: 1117 S Transistor UN1110 UN1111 UN1112 UN1113 UN1115 UN1116 UN1117 UN1118
Text: Transistors with built-in Resistor / 111D/111E/111F/111H/111L Silicon PNP epitaxial planer transistor Unit: mm For digital circuits 6.9±0.1 2.5±0.1 1.5 1.0 0.4 ● ● ● ● ● ● ● ● ● ● ●
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111D/111E/111F/111H/111L
UN1111
UN1112
UN1113
UN1114
UN1115
UN1116
UN1117
UN1118
UN1119
UN1114
1117 S Transistor
UN1110
UN1111
UN1112
UN1113
UN1115
UN1116
UN1117
UN1118
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UN1111
Abstract: UNR1111 XP04111 XP4111
Text: Composite Transistors XP04111 XP4111 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 UNR1111(UN1111) x 2 elements • Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage
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XP04111
XP4111)
UNR1111
UN1111)
UN1111
XP04111
XP4111
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9s MARKING
Abstract: UN1111 XN1111
Text: Composite Transistors XN1111 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UN1111 x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element
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XN1111
UN1111
9s MARKING
UN1111
XN1111
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UN1111
Abstract: UN1211 UNR1111 UNR1211 XP03311
Text: Composite Transistors XP03311 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) 2.1±0.1 0.65 2.0±0.1 1 2 0.425 5 3 4 +0.05 0.9± 0.1 0 to 0.1 ● UNR1211(UN1211)+UNR1111(UN1111) • Absolute Maximum Ratings Parameter
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XP03311
UNR1211
UN1211)
UNR1111
UN1111)
UN1111
UN1211
XP03311
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UN1111
Abstract: XP6111
Text: Composite Transistors XP6111 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 +0.05 UN1111 x 2 elements 0 to 0.1 ● 0.12 –0.02 • Basic Part Number of Element 0.7±0.1 0.9±0.1 0.2 ● Two elements incorporated into one package.
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XP6111
UN1111
UN1111
XP6111
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UN1111
Abstract: UN1211 UNR1111 UNR1211 XP04311 XP4311
Text: Composite Transistors XP04311 XP4311 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits 1 6 2 5 3 4 UNR1211(UN1211) + UNR1111(UN1111) • Absolute Maximum Ratings Parameter
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XP04311
XP4311)
UNR1211
UN1211)
UNR1111
UN1111)
UN1111
UN1211
XP04311
XP4311
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XP4311
Abstract: UN1111 UN1211
Text: Composite Transistors XP4311 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits 1 6 2 5 3 4 ● UN1211+UN1111 • Absolute Maximum Ratings Parameter (Ta=25˚C) Ratings Unit Collector to base voltage
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XP4311
UN1211
UN1111
XP4311
UN1111
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UN1111
Abstract: XP4111
Text: Composite Transistors XP4111 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 UN1111 x 2 elements • Absolute Maximum Ratings Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage Rating Collector to emitter voltage
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XP4111
UN1111
UN1111
XP4111
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UN1111
Abstract: UNR1111 XP01111 XP1111
Text: Composite Transistors XP01111 XP1111 Silicon PNP epitaxial planer transistor Unit: mm 0.2±0.05 For switching/digital circuits 2.1±0.1 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 UNR1111(UN1111) x 2 elements 0 to 0.1 ● 0.7±0.1 • Basic Part Number of Element
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XP01111
XP1111)
UNR1111
UN1111)
UN1111
XP01111
XP1111
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UN1111
Abstract: XP1111
Text: Composite Transistors XP1111 Silicon PNP epitaxial planer transistor Unit: mm 0.2±0.05 For switching/digital circuits 2.1±0.1 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 UN1111 x 2 elements 0 to 0.1 ● 0.7±0.1 • Basic Part Number of Element 0.12 – 0.02
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XP1111
UN1111
UN1111
XP1111
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1117 S Transistor
Abstract: 1117 S 1117 AT 1116 1117 UNR1111 UNR1112 UNR1113 UNR1114 UNR1115
Text: Transistors with built-in Resistor / 111D/111E/111F/111H/111L / 111D/111E/111F/111H/111L Unit: mm 2.5±0.1 6.9±0.1 (1.0) (1.0) (1.5) (1.5) R 0.9 For digital circuits
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111D/111E/111F/111H/111L
111D/111E/111F/111H/111L)
UNR1111
UNR1112
UNR1113
UNR1114
UNR1115
UNR1116
UNR1117
UNR1118
1117 S Transistor
1117 S
1117 AT
1116
1117
UNR1111
UNR1112
UNR1113
UNR1114
UNR1115
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UN1111
Abstract: UN1211 XP03311
Text: Composite Transistors XP03311 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) 2.1±0.1 0.65 2.0±0.1 1 2 0.425 5 3 4 +0.05 0.9± 0.1 0 to 0.1 ● UN1211+UN1111 • Absolute Maximum Ratings Parameter 1 : Emitter(Tr1)
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XP03311
UN1211
UN1111
UN1111
XP03311
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UNR1111
Abstract: UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119 B 47k 1112
Text: Transistors with built-in Resistor / 111D/111E/111F/111H/111L / 111D/111E/111F/111H/111L Unit: mm 2.5±0.1 6.9±0.1 (1.0) (1.0) (1.5) (1.5) R 0.9 For digital circuits
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111D/111E/111F/111H/111L
111D/111E/111F/111H/111L)
UNR1111
UNR1112
UNR1113
UNR1114
UNR1115
UNR1116
UNR1117
UNR1118
UNR1111
UNR1112
UNR1113
UNR1114
UNR1115
UNR1116
UNR1117
UNR1118
UNR1119
B 47k 1112
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marking 6Z
Abstract: UN1111 UNR1111 XP06111 XP6111
Text: Composite Transistors XP06111 XP6111 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 +0.05 UNR1111(UN1111) x 2 elements • Absolute Maximum Ratings 0 to 0.1 ● 0.12 –0.02 ■ Basic Part Number of Element 0.7±0.1
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XP06111
XP6111)
UNR1111
UN1111)
marking 6Z
UN1111
XP06111
XP6111
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Untitled
Abstract: No abstract text available
Text: Transistors with built-in Resistor UNR111x Series UN111x Series Silicon PNP epitaxial planar transistor Unit: mm 2.5±0.1 (1.0) R 0.9 M Di ain sc te on na tin nc ue e/ d • Costs can be reduced through downsizing of the equipment and reduction of the number of parts
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UNR111x
UN111x
UNR1110
UNR1111
UNR1112
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UN1111
Abstract: UNR1111 XP04111 XP4111
Text: Composite Transistors XP04111 XP4111 Silicon PNP epitaxial planer transistor 0.2±0.05 5 6 ● 0.12+0.05 –0.02 4 5° Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.
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XP04111
XP4111)
UNR1111
UN1111)
UN1111
XP04111
XP4111
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schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455
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P462-ND
P463-ND
LNG295LFCP2U
LNG395MFTP5U
US2011)
schematic diagram atx Power supply 500w
pioneer PAL 012A
1000w inverter PURE SINE WAVE schematic diagram
600va numeric ups circuit diagrams
winbond bios 25064
TLE 9180 infineon
smsc MEC 1300 nu
TBE schematic diagram inverter 2000w
DK55
circuit diagram of luminous 600va UPS
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marking 6Z
Abstract: UN1111 UNR1111 XN06111 XN6111
Text: Composite Transistors XN06111 XN6111 Silicon PNP epitaxial planer transistor 3 2 0.4±0.2 Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 2.8+0.2 –0.3 1.50+0.25
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XN06111
XN6111)
UNR1111
UN1111)
marking 6Z
UN1111
XN06111
XN6111
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SSP35n03
Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A
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5KE100A
5KE100CA
5KE10A
5KE10CA
5KE110A
5KE110CA
5KE11A
5KE11CA
5KE120A
5KE120CA
SSP35n03
bc417
ksh200 equivalent
2N5457 equivalent
ss8050 equivalent
1N34 equivalent
FQP50N06 equivalent
bd139 equivalent
2N5458 equivalent
2N3563 equivalent
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UNR1110
Abstract: UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119
Text: Transistors with built-in Resistor UNR111x Series UN111x Series Silicon PNP epitaxial planar transistor Unit: mm For digital circuits 2.5±0.1 (1.0) R 0.9 R 0.7 0.55±0.1 (R1) 47 kΩ 10 kΩ 22 kΩ 47 kΩ 10 kΩ 10 kΩ 4.7 kΩ 22 kΩ 0.51 kΩ 1 kΩ
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UNR111x
UN111x
UN1110)
UN1111)
UN1112)
UN1113)
UN1114)
UN1115)
UN1116)
UN1117)
UNR1110
UNR1111
UNR1112
UNR1113
UNR1114
UNR1115
UNR1116
UNR1117
UNR1118
UNR1119
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UN1111
Abstract: UN1211 UNR1111 UNR1211 XN04311 XN4311
Text: Composite Transistors XN04311 XN4311 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 Parameter Collector to base voltage VCBO 50 V Collector to emitter voltage
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XN04311
XN4311)
UN1111
UN1211
UNR1111
UNR1211
XN04311
XN4311
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UN1111
Abstract: UNR1111 XN06111 XN6111
Text: Composite Transistors XN06111 XN6111 Silicon PNP epitaxial planer transistor Unit: mm +0.2 For switching/digital circuits 2.8 –0.3 +0.25 1.5 –0.05 Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current Symbol
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XN06111
XN6111)
UN1111
UNR1111
XN06111
XN6111
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X096Z
Abstract: No abstract text available
Text: Hybrid Headers 2.54 mm O.IOOin. Ordering Data Num ber o f positions (see table) Base num ber specifies connector style □ □ □ □ □ • X Y Y Y Z L Plating O p t i o n s - Tail Length Replace X in dash num ber w ith:
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