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    Microchip Technology Inc UES1106

    DIODE GEN PURP 400V 1A AXIAL
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    Microchip Technology Inc UES1106E3

    RECTIFIER
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    Microchip Technology Inc UES1106SM

    DIODE GEN PURP 400V 2A A SQ-MELF
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    Microchip Technology Inc UES1106HR2

    DIODE GEN PURP 400V 2A A AXIAL
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    Microchip Technology Inc UES1106-TR

    DIODE GEN PURP 400V 1A
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    UES1106 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UES1106 Central Semiconductor DOIDE ULTRA FAST RECOVERY RECTIFIER 3A 2DIE Original PDF
    UES1106 BKC International 2.0 Amp Voidless Fast Switching Rectifiers Scan PDF
    UES1106 Microsemi Rectifiers, High Efficiency, 2A Scan PDF
    UES1106 Microsemi Rectifier Scan PDF
    UES1106 Unitrode International Semiconductor Data Book 1981 Scan PDF
    UES1106HR Microsemi Rectifier Scan PDF

    UES1106 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    webex

    Abstract: No abstract text available
    Text: ISCFdÈŽ `çÛŽ `çÛ text/html About News Contact keyword search: UES1106SM #16647 Package Division Scottsdale Datasheet (none) Mil-Spec Shipping (none) TR7\1500cntTR7 Qual Data Contact Microsemi Symbol Max IO 2 A Reverse Voltage Vrwm 400 V Max Forward Surge Current


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    UES1106SM 100ns) TR7\1500cntTR7 webex PDF

    SMD Transistors w04 sot-23

    Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
    Text: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.


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    represent9-14 SMD Transistors w04 sot-23 transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355 PDF

    1N5806

    Abstract: 1N5802 CMR3U-01 CPD17 UES1101 UES1106
    Text: PROCESS CPD17 Ultra Fast Rectifier 3 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 88 x 88 MILS Die Thickness 14 MILS Anode Bonding Pad Area 69 x 69 MILS Top Side Metalization Ni/Au - 5,000Å/2,000Å Back Side Metalization


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    CPD17 1N5802 1N5806 UES1101 UES1106 CMR3U-01 22-March 1N5806 CPD17 UES1106 PDF

    Untitled

    Abstract: No abstract text available
    Text: POWER OPERATIONAL AMPLIFIERS PA08 • PA08A HTTP://WWW.APEXMICROTECH.COM M I C R O T E C H N O L O G Y 800 546-APEX (800) 546-2739 FEATURES • • • • WIDE SUPPLY RANGE — ±15V to ±150V PROGRAMMABLE OUTPUT CURRENT LIMIT HIGH OUTPUT CURRENT — Up to ±150mA


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    PA08A 546-APEX 150mA PA08MU PDF

    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


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    BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587 PDF

    Untitled

    Abstract: No abstract text available
    Text: • PA08A PA08PA08 PA08A PA08, PA08A Power Operational Amplifier FEATURES • WIDE SUPPLY RANGE — ±15V to ±150V • PROGRAMMABLE OUTPUT CURRENT LIMIT • HIGH OUTPUT CURRENT — Up to ±150mA • LOW BIAS CURRENT — FET Input APPLICATIONS • HIGH VOLTAGE INSTRUMENTATION


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    PA08A 150mA PA08U PDF

    PA08U

    Abstract: No abstract text available
    Text: PA08PA08 PA08A PA08A PA08, PA08A Power Operational Amplifier FEATURES • WIDE SUPPLY RANGE — ±15V to ±150V • PROGRAMMABLE OUTPUT CURRENT LIMIT • HIGH OUTPUT CURRENT — Up to ±150mA • LOW BIAS CURRENT — FET Input APPLICATIONS • HIGH VOLTAGE INSTRUMENTATION


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    PA08A PA08A 150mA PA08U PDF

    fast rectifier diode 600 vdc 1a

    Abstract: No abstract text available
    Text: SHF1104 & SHF1104SMS thru SHF1109 & SHF1109SMS Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET 1 AMP 400 - 900 V Hyper Fast Rectifier


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    SHF1104 SHF1104SMS SHF1109 SHF1109SMS UES1106, IN6624 500mA, 250mA, 10VDC, fast rectifier diode 600 vdc 1a PDF

    Untitled

    Abstract: No abstract text available
    Text: SHF1104 & SHF1104SMS thru SHF1109 & SHF1109SMS Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET 1 AMP 400 - 900 V Hyper Fast Rectifier


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    SHF1104 SHF1104SMS SHF1109 SHF1109SMS UES1106, IN6624 SHF1109SMS 500mA, 250mA, 10VDC, PDF

    1000w inverter PURE SINE WAVE schematic diagram

    Abstract: schematic diagram inverter 5000w schematic diagram power inverter 5000w, 12v dc schematic diagram inverter 5000w USING MOSFET power amplifier 5000W with PCB 5000w audio amplifier circuit diagram 5 channels 5000w audio amplifier circuit diagram 4000w audio amplifier 500w pioneer power amp circuit diagram igbt inverter welder schematic
    Text: Power Amplifier Product Matrix 1200 PA89 900 PA97 500 PA95 PA88 450 PA15 PA91 PA85/PA98 PA93 400 PA92 350 PA41/PA42/PA44 300 Supply Voltage V PA94 PA90 PA84 PA83 PA82J PA08 PB58 PA04 200 PA81J PA46 150 PA03 PB50 PA45 PA07 100 PA12 PA13 PA10 90 PA05 PA61 PA51


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    PA85/PA98 PA41/PA42/PA44 PA82J PA81J PA21/25/26 1000w inverter PURE SINE WAVE schematic diagram schematic diagram inverter 5000w schematic diagram power inverter 5000w, 12v dc schematic diagram inverter 5000w USING MOSFET power amplifier 5000W with PCB 5000w audio amplifier circuit diagram 5 channels 5000w audio amplifier circuit diagram 4000w audio amplifier 500w pioneer power amp circuit diagram igbt inverter welder schematic PDF

    UES1106

    Abstract: IN4936 RL-118 PA08 PA08A
    Text: POWER OPERATIONAL AMPLIFIERS PA08 • PA08A HTTP://WWW.APEXMICROTECH.COM M I C R O T E C H N O L O G Y 800 546-APEX (800) 546-2739 FEATURES • • • • WIDE SUPPLY RANGE — ±15V to ±150V PROGRAMMABLE OUTPUT CURRENT LIMIT HIGH OUTPUT CURRENT — Up to ±150mA


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    PA08A 546-APEX 150mA 130mA 200mA PA08U UES1106 IN4936 RL-118 PA08 PA08A PDF

    CTX12SL

    Abstract: CTX12S CTX-12SL STPS1045CT RS8KT MBR020 BYT30P-600 RS8DT FMS-3FU BYT01-200
    Text: CROSS REFERENCE POWER RECTIFIERS INDUSTRY STANDARD 10BF10 10BF100 10BF20 10BF40 10BF60 10BF80 10BQ015 10BQ040 10BQ060 10BQ100 10CTF30 10CTF40 10CTQ150 10CTQ150S 10DL2C41A 10DL2CZ47A 10GWJ2CZ47C 10MF2 10MQ040 10MQ060 10MQ090 10TQ035 10TQ045 11DF1 11DF2 11DF4


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    10BF10 10BF100 10BF20 10BF40 10BF60 10BF80 10BQ015 10BQ040 10BQ060 10BQ100 CTX12SL CTX12S CTX-12SL STPS1045CT RS8KT MBR020 BYT30P-600 RS8DT FMS-3FU BYT01-200 PDF

    UES1106

    Abstract: data sheet 1N5806 1N5802 1N5806 CMR3U-01 CPD17 UES1101
    Text: PROCESS CPD17 Ultra Fast Rectifier 3 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 87 x 87 MILS Die Thickness 12.2 MILS Anode Bonding Pad Area 69.5 x 69.5 MILS Top Side Metalization Au - 5,000Å Back Side Metalization


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    CPD17 1N5802 1N5806 UES1101 UES1106 CMR3U-01 24-August UES1106 data sheet 1N5806 1N5806 CPD17 PDF

    STPS30S45CT

    Abstract: CTX12S STPS30S45 CTX12SL BYV42-200 D20LC20 Diode Equivalent DSEK60-02A stth3003cg stth3003cw CTL22S
    Text: Rectifiers Selection guide February 2005 STMicroelectronics - February 2005 - Printed in Italy - All rights reserved The STMicroelectronics corporate logo is a registered trademark of the STMicroelectronics group of companies. All other names are the property of their respective owners.


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    SGRECT/1104 STPS30S45CT CTX12S STPS30S45 CTX12SL BYV42-200 D20LC20 Diode Equivalent DSEK60-02A stth3003cg stth3003cw CTL22S PDF

    U840 diode motorola

    Abstract: motorola u860 diode DIODE u1560 b2045 aka u1560 DIODE u860 diode u1560 diode U3J U820 diode fast recovery diode ses5001
    Text: DL151/D Rev. 3, Nov-2000 Rectifier Device Data Rectifier Device Data DL151/D Rev. 3, Oct–2000  SCILLC, 2000 Previous Edition  1995 “All Rights Reserved’’ This book presents technical data for ON Semiconductor’s broad line of rectifiers. Complete specifications are provided in


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    DL151/D Nov-2000 r14525 U840 diode motorola motorola u860 diode DIODE u1560 b2045 aka u1560 DIODE u860 diode u1560 diode U3J U820 diode fast recovery diode ses5001 PDF

    c5088 transistor

    Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
    Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154


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    1853IMPATT c5088 transistor transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N PDF

    IN6624

    Abstract: SHF1104 SHF1104SMS SHF1106 SHF1109 SHF1109SMS UES1106
    Text: SHF1104 & SHF1104SMS thru SHF1109 & SHF1109SMS Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET 1 AMP 400 - 900 V Hyper Fast Rectifier


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    SHF1104 SHF1104SMS SHF1109 SHF1109SMS SHF11 500mA, 250mA, 10VDC, RH0111F IN6624 SHF1104 SHF1104SMS SHF1106 SHF1109 SHF1109SMS UES1106 PDF

    mr852

    Abstract: DIODE MUR410 BA 5904 A F P RS1G footprint wave soldering MUR460 BL mur1650 BYV1945 murs160t3 smb MBRD360 TRANSISTOR 534
    Text: MBRM120LT3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced


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    MBRM120LT3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 mr852 DIODE MUR410 BA 5904 A F P RS1G footprint wave soldering MUR460 BL mur1650 BYV1945 murs160t3 smb MBRD360 TRANSISTOR 534 PDF

    MUR420 diode

    Abstract: MUR860 equivalent Diode 31DQ06 mr760 DIODE usd745c equivalent 1N5186GP 1N2069 diode MARKING BCJ P600K SES5001 cross reference
    Text: MBRM140T3 Advance Information Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package http://onsemi.com The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal


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    MBRM140T3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MUR420 diode MUR860 equivalent Diode 31DQ06 mr760 DIODE usd745c equivalent 1N5186GP 1N2069 diode MARKING BCJ P600K SES5001 cross reference PDF

    Untitled

    Abstract: No abstract text available
    Text: RECTIFIERS UES1104 UES1105 UES1106 High Efficiency, 2A DESCRIPTION The UES1104 series is specifically designed for operation in power switching circuits operating at frequencies of at least 20 KHz. FEATURES • Very Low Forward Voltage 1.L5V • Very Fast Recovery Times (50nSec)


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    UES1104 UES1105 UES1106 UES1104 50nSec) PDF

    Untitled

    Abstract: No abstract text available
    Text: UES1104SM UES1105SM UES1106SM SURFACE M O UNT RECTIFIERS High Efficiency, 3A FEATURES DESCRIPTION • Small Convenient Surface Mount Package The UES1104SM series are surface mount power rectifiers designed for high frequency switching circuits when optimum board space and surface density constraints must be


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    UES1104SM UES1105SM UES1106SM UES1104SM 50nSec) UES1104SM. UES1105SM. UESU05SM PDF

    ES1106

    Abstract: 100-C UES1104 UES1105 UES1106
    Text: UES1104UES1106 RECTIFIERS High Efficiency, 2A FEATU RES DESCR IPTIO N • • • • The UES1104 series is specifically designed for operation in power switching circu its operating at frequencies of at least 20 KHz. Very Low Forward Voltage 1.15V Very Fast Recovery Times (50nSec)


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    UES1104â UES1106 50nSec) UES1104 UES1104 UES1105 UES110S ES1106 100-C UES1105 UES1106 PDF

    P 477

    Abstract: 9938 G TA 7719 UES1106HR2 JANTX1N5804US 1N6621
    Text: Microsemi Ultra Fast Rectifiers UFR Part Number Microsem i Division Package Outline Type Watertown Santa Ana Santa Ana Santa Ana Santa Ana Santa Ana Santa Ana Chatsworth Watertown Watertown Watertown Watertown Santa Ana Santa Ana Santa Ana Santa Ana Santa Ana


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    DO-15 P 477 9938 G TA 7719 UES1106HR2 JANTX1N5804US 1N6621 PDF

    Untitled

    Abstract: No abstract text available
    Text: ^ discrete devices jEmitronicr hot line TOLL FREE NUMBER 800-777-3960 RECTIFIERS High Efficiency, 2.5A ELECTRICAL SPECIFICATIONS Maximum Forward Voltage @ Maximum Reverse Current @ ,975V UES1102 UES1103 10 0V @ 2A @ 2A 1 5 0V tp = 3 0 0 jiS tp = 3 0 0nS 11


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    UES1102 UES1103 UES1104 UES1105 UES1106 UES1301 UES1302 UES1303 300jiS UES1304 PDF