Contextual Info: RECTIFIERS UES1104 UES1105 UES1106 High Efficiency, 2A DESCRIPTION The UES1104 series is specifically designed for operation in power switching circuits operating at frequencies of at least 20 KHz. FEATURES • Very Low Forward Voltage 1.L5V • Very Fast Recovery Times (50nSec)

webex

Contextual Info: ISCFdÈŽ `çÛŽ `çÛ text/html About News Contact keyword search: UES1106SM #16647 Package Division Scottsdale Datasheet (none) Mil-Spec Shipping (none) TR7\1500cntTR7 Qual Data Contact Microsemi Symbol Max IO 2 A Reverse Voltage Vrwm 400 V Max Forward Surge Current

1104HR

Abstract: ues1106
Contextual Info: UES1104 UES1105 UES1106 UES1104HR UES1105HR UES1106HR RECTIFIERS High Efficiency, 2A FEATU RES D ESCR IPTIO N • • • • The UES1104 series is specifically designed for operation in power switching circuits operating at frequencies of at least 20 KHz.

Contextual Info: DIGITRON SEMICONDUCTORS UES1104 – UES1106 HIGH-EFFICIENCY RECTIFIERS MAXIMUM RATINGS UES1104 - UES1106 Peak Inverse Voltage: UES1104 UES1105 UES1106 Maximum Average D.C. Output Current: IO @ TA = 25°C Free Air @ TL = 50°C, L = ⅜” Surge Current (8.3ms)

BKC Semiconductors

Abstract: DSAIH000251
Contextual Info: 2.0 Amp Voidless Fast Applications UES1104 Switching Rectifiers thru UES1106 Hard Glass Tungsten For use in hostile environments such as military and aerospace. Used where speed, higher voltage and small footprint are important. They are ideal for use in industrial, aircraft or satellite power supplies.

BKC Semiconductors

Contextual Info: 2.0 Amp Voidless Fast Applications Switching Rectifiers UES1104 thru UES1106 Hard Glass Tungsten For use in hostile environments such as military and aerospace. Used where speed, higher voltage and small footprint are important. They are ideal for use in industrial, aircraft or satellite power supplies.

Contextual Info: , One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. UES1104 UES1105 UES1106 RECTIFjERS High Efficiency, 2A DESCRIPTION The UES1104 series is specifically designed for operation in power switching

UES1105

Abstract: UES1106 DO213AB package DO-213AB UES1104 BKC Semiconductors
Contextual Info: 2.0 Amp Voidless Fast Applications Switching Rectifiers UES1104 thru UES1106 Hard Glass Tungsten For use in hostile environments such as military and aerospace. Used where speed, higher voltage and small footprint are important. They are ideal for us£ in industrial, aircraft or satellite powpc supplies. :

1N6620-1N6625

Abstract: sj0 diode 500C UES1104 UES1105 UES1106 1104HR UESI106 UES-1106
Contextual Info: RECTIFIERS UES1104 UES1105 UES1106 High Efficiency, 2A FEATURES D E S C R IP T IO N • • • • The UES1104 series is specifically designed for operation in power switching circuits operating at frequencies of at least 20 KHz, Very Low Forward Voltage 1.15V

Contextual Info: UES1106 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current2.0 V(RRM)(V) Rep.Pk.Rev. Voltage400 t(rr) Max.(s) Rev.Rec. Time50n @I(F) (A) (Test Condition)0.5 @I(R) (A) (Test Condition)1.0 V(FM) Max.(V) Forward Voltage1.3 @I(FM) (A) (Test Condition)1.0

Contextual Info: U ESI104 UES1105 UES1106 RECTIFIERS High Efficiency, 2A FEATU RES DESCRIPTION • • • • The UES1104 series is specifically designed for operation in power switching circuits operating at frequencies of at least 20 KHz. Very Low Forward Voltage 1.15V

Contextual Info: UES1104SM UES1105SM UES1106SM SURFACE M O UNT RECTIFIERS High Efficiency, 3A FEATURES DESCRIPTION • Small Convenient Surface Mount Package The UES1104SM series are surface mount power rectifiers designed for high frequency switching circuits when optimum board space and surface density constraints must be

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.

1N5806

Abstract: 1N5802 CMR3U-01 CPD17 UES1101 UES1106
Contextual Info: PROCESS CPD17 Ultra Fast Rectifier 3 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 88 x 88 MILS Die Thickness 14 MILS Anode Bonding Pad Area 69 x 69 MILS Top Side Metalization Ni/Au - 5,000Å/2,000Å Back Side Metalization

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

Contextual Info: • PA08A PA08PA08 • PA08A PA08, PA08A Power Operational Amplifier FEATURES • WIDE SUPPLY RANGE — ±15V to ±150V • PROGRAMMABLE OUTPUT CURRENT LIMIT • HIGH OUTPUT CURRENT — Up to ±150mA • LOW BIAS CURRENT — FET Input APPLICATIONS • HIGH VOLTAGE INSTRUMENTATION

1N5806

Abstract: UES1101 mesa die 1N5802 CMR3U-01 CPD17 UES1106
Contextual Info: PROCESS CPD17 Central Ultra Fast Rectifier TM Semiconductor Corp. 3 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 87 x 87 MILS Die Thickness 12.2 MILS Anode Bonding Pad Area 69.5 x 69.5 MILS Top Side Metalization

MUR1560 equivalent

Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
Contextual Info: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

Diode 1N4007 DO-7 Rectifier Diode

Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
Contextual Info: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced

CAT7105CA

Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Contextual Info: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A

Contextual Info: UNITRODE "t Ì CORP 9347963 UNITRODE D l f | c]3 4 7 ,ïki3 0 0 1 1 3 0 0 Ô 92D CORP 11380 UE S11 04S M UE S1 10 5S M UE S1 10 6S M SURFACE MOUNT RECTIFIERS High Efficiency, 3A r - ó y •t 5 DESC RIPTIO N FEATURES • S m a ll C o n v e n ie n t S u rfa c e M o u n t

Contextual Info: SHF1104 & SHF1104SMS thru SHF1110 & SHF1110SMS Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET Part Number/Ordering Information 1/