TSOP5038

Abstract: TSAL6200 IR Receiver Module 04FEB11
Contextual Info: TSOP5038 Vishay Semiconductors IR Receiver Module for Light Barrier Systems FEATURES • Low supply current • Photo detector and preamplifier in one package • Internal filter for 38 kHz IR signals • Shielding against EMI 1 2 3 4 • Supply voltage: 2.7 V to 5.5 V

TSOP50

Contextual Info: SANYO Semiconductor Thin Small Outline Package 50Pin Plastic TSOP50 400mil Precautions concerning information given on package drawings Basically, SANYO Semiconductor Company’s packages are named and coded in compliance with JEITA regulations (ED-7303A), which stipulate the names and codes for integrated circuit packages. However, the

Contextual Info: Not for New Design TSOP5038 www.vishay.com Vishay Semiconductors IR Receiver Module for Light Barrier Systems FEATURES • Low supply current • Photo detector package and preamplifier in one • Internal filter for 38 kHz IR signals • Shielding against EMI

Contextual Info: Not for New Design TSOP5038 www.vishay.com Vishay Semiconductors IR Receiver Module for Light Barrier Systems FEATURES • Low supply current • Photo detector package and preamplifier in one • Internal filter for 38 kHz IR signals • Shielding against EMI

Contextual Info: TSOP5038 Vishay Semiconductors IR Receiver Module for Light Barrier Systems FEATURES • Low supply current • Photo detector and preamplifier in one package • Internal filter for 38 kHz IR signals • Shielding against EMI 1 2 3 4 • Supply voltage: 2.7 V to 5.5 V

DMA5

Abstract: tsop50 MD50 U-509 SO-DIMM 144-pin KM416V4104A U5-12 U509
Contextual Info: 2 3 4 GND GND GND GND 3,5 3,5 3,5 D_RAS2# D_CAS3# D_CAS2# 3,5 D_MWEB# 26 39 45 50 KM416V4104A TSOP50 GND RAS# UCAS# LCAS# OE# W# NC NC NC NC NC NC DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 VCC VCC VCC VCC GND GND GND GND 2 3 4 5

tsop50

Abstract: TSOP-50
Contextual Info: SANYO Semiconductor Thin Small Outline Package 50Pin Plastic TSOP50 400mil 外形図情報に関するご注意 三洋半導体パッケージは基本的に JEITA の名称付与規定（ED-7303A）に準じています。 ただし、従来のパッケージに用いている名称については、そのまま継続しています。

TSOP5038

Abstract: IR Receiver module tsop Ir sensor TSAL6200 circuit diagram for IR receiver
Contextual Info: TSOP5038 Vishay Semiconductors IR Receiver Module for Light Barrier Systems FEATURES • Low supply current • Photo detector and preamplifier in one package • Internal filter for 38 kHz IR signals • Shielding against EMI 1 2 3 • Supply voltage: 2.7 V to 5.5 V

TSOP6038

Contextual Info: Not for New Design - Alternative Available: New TSOP6038 #82483 TSOP5038 www.vishay.com Vishay Semiconductors IR Receiver Module for Light Barrier Systems FEATURES • Low supply current • Photo detector and preamplifier in one package • Internal filter for 38 kHz IR signals

IR Receiver Module

Abstract: tsop Ir sensor TSAL6200 TSOP5038
Contextual Info: TSOP5038 Vishay Semiconductors IR Receiver Module for Light Barrier Systems FEATURES • Low supply current • Photo detector and preamplifier in one package • Internal filter for 38 kHz IR signals • Shielding against EMI 1 2 3 • Supply voltage: 2.7 V to 5.5 V

Contextual Info: TSOP5038 Vishay Semiconductors IR Receiver Module for Light Barrier Systems FEATURES • Low supply current • Photo detector and preamplifier in one package • Internal filter for 38 kHz IR signals e3 • Shielding against EMI 1 2 3 • Supply voltage: 2.7 V to 5.5 V

TC51V18160

Contextual Info: INTEGRATED TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT CIRCUIT TC51V18160 C S / CFTS - 60 TOSHIBA TECHNICAL DATA SILICON GATE CMOS TENTATIVE DATA 1,048,576 WORD x16 BIT FAST PAGE DYNAMIC RAM DESCRIPTION The TC51V1S160CJS-CFTS is the fast page dynamic R A M organized 1,048,576 words by 16 bits.

tc5118180

Abstract: TC5118180AJ TC5118180A A495 A509 TC511818 TC5118 TOSHIBA TSOP50-P-400 toshiba A500 A498
Contextual Info: TOSHIBA TC511818 QAJ/AFT-70/80 1,048,576 WORD X 18 BIT DYNAMIC RAM DESCRIPTION The TC5118180AJ/FT is the new generation dynamic RAM organized 1,048,576 word by 18 bit. The TC5118180AJ/AFT utilizes Toshiba’s CMOS silicon gate process technology as w ell as advanced circuit

Contextual Info: 4M x 16-Bit Dynamic RAM 8k, 4k & 2k Refresh HYB 3164160AT(L) -40/-50/-60 HYB 3165160AT(L) -40/-50/-60 HYB 3166160AT(L) -40/-50/-60 Advanced Information • 4 194 304 words by 16-bit organization • 0 to 70 °C operating temperature • Fast Page Mode operation

Contextual Info: O K I Semiconductor MSM5 1 1 7 1 7 0 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117170 is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5117170 achieves high integration, high-speed operation, and low-power

MSM5116160

Abstract: dq8e N4409
Contextual Info: O K I Semiconductor MSM5116160 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116160 is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5116160 achieves high integration, high-speed operation, and low -pow er

Contextual Info: O K I Semiconductor MSM5116170 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116170 is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5116170 achieves high integration, high-speed operation, and low-power

Contextual Info: O K I Semiconductor MSM51V16170 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51 V16170isal ,048,576-word x 16-bit dy namic RAM fabricated in OKI's CMOS silicon gate technology. The MSM51V16170 achieves high integration, high-speed operation, and low-power

Contextual Info: O K I Semiconductor MSM5 1 V1 7 1 6 0 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE D ESCR IPTIO N The MSM51V17160 is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM51V17160 achieves high integration, high-speed operation, and low-power

Contextual Info: O K I Semiconductor MSM5116160A_ 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE D ESCRIPTIO N The MSM5116160A is a 1,048,576-word x 16-bit dynam ic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5116160A achieves high integration, high-speed operation, and low-power

Contextual Info: 0316409C 4M x 412/10, 3.3V, SR. 0316169C 1M x 1612/8, 3.3V, SR. 0316809C 2M x 812/9, 3.3V, SR. 4Mx4, 2Mx8, 1Mx16 16Mbit Enhanced Synchronous DRAM Preliminary Features • High Performance: CAS latency = 2 fCK Clock Frequency tCK2 Clock Cycle tAC2 Clock Access Time

Contextual Info: 0316409C 4M x 412/10, 3.3V, SR. 0316169C 1M x 1612/8, 3.3V, SR. 0316809C 2M x 812/9, 3.3V, SR. 4Mx4, 2Mx8, 1Mx16 16Mbit Enhanced Synchronous DRAM Preliminary Data Sheet Overview Features • High Performance: CAS latency = 2 • Programmable Burst Length: 1,2,4,8,full-page

Contextual Info: m 'i[m24û D02ô4Db 752 m- TOSHIBA TC5118180BJ/BFT-60/70 PRELIMINARY 1,048,576 WORD X 16 BIT FAST PAGE DYNAMIC RAM Description TheTC 5118180BJ/B FT is the fast page dynamic RAM organized as 1,048,576 w ords by 18 bits. TheTC 5118180BJ/B FT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

TC5118165

Abstract: TC5118165BFT
Contextual Info: INTEGRATED TO SH IB A M O S D IG ITA L INTEG RATED CIRCUIT CIRCUIT T C 5 1 1 8 1 6 5 BJ / B F T - 60 T C 5 1 1 8 1 6 5 BJ / BFT - 70 TOSHIBA TECHNICAL TE N TA TIV E D A T A 1 ,0 4 8 ,5 7 6 W O R D x DATA SILICON GATE C M O S 16 BIT HYPER PAGE ED O D Y N A M IC R A M